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    1-2 of 2
    Tellurium
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    Journal Articles

    A steep-slope tellurium transistor with a native voltage amplifying threshold switch

    Xinxin Wang, Huanglong Li
    Journal: Applied Physics Letters
    Appl. Phys. Lett. 120, 223502 (2022)
    https://doi.org/10.1063/5.0090179
    Published: June 2022
    Abstract
    View article titled, A steep-slope tellurium transistor with a native voltage amplifying threshold switch
    Open the PDF for A steep-slope tellurium transistor with a native voltage amplifying threshold switch in another window
    Includes: Supplementary data
    Journal Articles

    Hole-doped M4SiTe4 (M = Ta, Nb) as an efficient p-type thermoelectric material for low-temperature applications

    Editor’s Pick
    Yoshihiko Okamoto, Yuma Yoshikawa, Taichi Wada, Koshi Takenaka
    Journal: Applied Physics Letters
    Appl. Phys. Lett. 115, 043901 (2019)
    https://doi.org/10.1063/1.5109590
    Published: July 2019
    Abstract
    View article titled, Hole-doped <em>M</em><sub>4</sub>SiTe<sub>4</sub> (<em>M</em> = Ta, Nb) as an efficient <em>p</em>-type thermoelectric material for low-temperature applications
    Open the PDF for Hole-doped <em>M</em><sub>4</sub>SiTe<sub>4</sub> (<em>M</em> = Ta, Nb) as an efficient <em>p</em>-type thermoelectric material for low-temperature applications in another window
    • Online ISSN 1077-3118
    • Print ISSN 0003-6951

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