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Journal Articles

Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers

Editor’s Pick
Rombang Rizky Sihombing, Thomas Scheike, Jun Uzuhashi, Tadakatsu Ohkubo, Zhenchao Wen, Seiji Mitani, Hiroaki Sukegawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022407 (2025)
https://doi.org/10.1063/5.0247660
Published: January 2025
View articletitled, Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers
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Journal Articles

Distinguishing the impact of oxidation on the Josephson junction oxide barrier through the 1 / f behavior

Editor’s Pick
Yong Chen, Peng Duan, Zhi-Long Jia, Xin-Xin Yang, Lei Du, Hao-Ran Tao, Chi Zhang, Liang-Liang Guo, Hai-Feng Zhang, Tian-Le Wang, Ze-An Zhao, Xiao-Yan Yang, Sheng Zhang, Ren-Ze Zhao, Peng Wang, Wei-Cheng Kong, Guo-Ping Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 094001 (2024)
https://doi.org/10.1063/5.0223366
Published: August 2024
View articletitled, Distinguishing the impact of oxidation on the Josephson junction oxide barrier through the 1 / f behavior
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Journal Articles

Post-trench restoration for vertical GaN power devices

Yanjun Li, Na Ren, Hengyu Wang, Qing Guo, Ce Wang, Haoyuan Cheng, Jiangbin Wan, Junze Li, Kuang Sheng
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 092103 (2024)
https://doi.org/10.1063/5.0191454
Published: February 2024
View articletitled, Post-trench restoration for vertical GaN power devices
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Includes: Supplementary data
Journal Articles

Influence of oxygen ingress on microstructure and phase formation during two-step oxidation surface hardening of TiZrNbHfTa high entropy alloy

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Daniel Dickes, Yujun Zhao, Felix Baier, Beyza Öztürk, Rainer Völkl, Tong Li, Mathias C. Galetz, Uwe Glatzel
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 071903 (2024)
https://doi.org/10.1063/5.0190771
Published: February 2024
View articletitled, Influence of oxygen ingress on microstructure and phase formation during two-step oxidation surface hardening of TiZrNbHfTa high entropy alloy
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Journal Articles

Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation

Dun-Bao Ruan, Po-Tsun Liu, Kai-Jhih Gan, Chih-Chieh Hsu, Yu-Chuan Chiu, Chia-Yu Lin, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 231602 (2021)
https://doi.org/10.1063/5.0069207
Published: December 2021
View articletitled, Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation
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Journal Articles

Adjusting oxygen vacancy and resistance switching of InWZnO thin films by high-pressure oxidation technique

Kai-Jhih Gan, Po-Tsun Liu, Chih-Chieh Hsu, Dun-Bao Ruan, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 171601 (2021)
https://doi.org/10.1063/5.0065269
Published: October 2021
View articletitled, Adjusting oxygen vacancy and resistance switching of InWZnO thin films by high-pressure oxidation technique
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Includes: Supplementary data
Journal Articles

How charge trapping affects the conductivity of electrochemically doped poly(3-hexylthiophene) films

Lea-Sophie Hornberger, David Neusser, Claudia Malacrida, Loren G. Kaake, Sabine Ludwigs
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 163301 (2021)
https://doi.org/10.1063/5.0056484
Published: October 2021
View articletitled, How charge trapping affects the conductivity of electrochemically doped poly(3-hexylthiophene) films
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Includes: Supplementary data
Journal Articles

Optical direct write of Dolan–Niemeyer-bridge junctions for transmon qubits

Editor’s Pick
J. T. Monroe, D. Kowsari, K. Zheng, C. Gaikwad, J. Brewster, D. S. Wisbey, K. W. Murch
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 062601 (2021)
https://doi.org/10.1063/5.0060246
Published: August 2021
View articletitled, Optical direct write of Dolan–Niemeyer-bridge junctions for transmon qubits
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Includes: Supplementary data
Journal Articles

Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces

Yasuto Hijikata, Shota Komori, Shunsuke Otojima, Yu-Ichiro Matsushita, Takeshi Ohshima
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 204005 (2021)
https://doi.org/10.1063/5.0048772
Published: May 2021
View articletitled, Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces
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Includes: Supplementary data
Journal Articles

Mechanical strain mapping of GaAs based VCSELs

Merwan Mokhtari, Philippe Pagnod-Rossiaux, Christophe Levallois, François Laruelle, Daniel T. Cassidy, Mauro Bettiati, Jean-Pierre Landesman
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 091102 (2021)
https://doi.org/10.1063/5.0040386
Published: March 2021
View articletitled, Mechanical strain mapping of GaAs based VCSELs
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Journal Articles

Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs

Zhaofu Zhang, Zhen Wang, Yuzheng Guo, John Robertson
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 031601 (2021)
https://doi.org/10.1063/5.0037241
Published: January 2021
View articletitled, Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs
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Journal Articles

Controlling oxygen distribution of an MgAl2O4 barrier for magnetic tunnel junctions by two-step process

Shinto Ichikawa, P.-H. Cheng, Hiroaki Sukegawa, Tadakatsu Ohkubo, Kazuhiro Hono, Seiji Mitani, Katsuyuki Nakada
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 122409 (2020)
https://doi.org/10.1063/5.0015474
Published: September 2020
View articletitled, Controlling oxygen distribution of an MgAl2O4 barrier for magnetic tunnel junctions by two-step process
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Journal Articles

Interface reaction kinetics in SiGe oxidation

Xiuyan Li, Yusuke Noma, Woojin Song, Tomonori Nishimura, Akira Toriumi
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 232901 (2019)
https://doi.org/10.1063/1.5109746
Published: December 2019
View articletitled, Interface reaction kinetics in SiGe oxidation
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Journal Articles

Direct comparison of plain and oxidized metal Schottky contacts on β-Ga2O3

C. Hou, R. M. Gazoni, R. J. Reeves, M. W. Allen
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 033502 (2019)
https://doi.org/10.1063/1.5079423
Published: January 2019
View articletitled, Direct comparison of plain and oxidized metal Schottky contacts on β-Ga2O3
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Journal Articles

Environmental oxidative aging of iron oxide nanoparticles

Lara K. Bogart, Cristina Blanco-Andujar, Quentin A. Pankhurst
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 133701 (2018)
https://doi.org/10.1063/1.5050217
Published: September 2018
View articletitled, Environmental oxidative aging of iron oxide nanoparticles
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Includes: Supplementary data
Journal Articles

Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy

T. Umeda, G.-W. Kim, T. Okuda, M. Sometani, T. Kimoto, S. Harada
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 061605 (2018)
https://doi.org/10.1063/1.5041059
Published: August 2018
View articletitled, Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy
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Journal Articles

Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields

An Xiang, Xingliang Xu, Lin Zhang, Zhiqiang Li, Juntao Li, Gang Dai
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 062101 (2018)
https://doi.org/10.1063/1.5006249
Published: February 2018
View articletitled, Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields
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Journal Articles

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

Featured
Y. Abe, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, M. Haruyama, W. Kada, O. Hanaizumi, S. Onoda, T. Ohshima
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 031105 (2018)
https://doi.org/10.1063/1.4994241
Published: January 2018
View articletitled, Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors
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Journal Articles

Thermal oxidation kinetics of germanium

X. Wang, T. Nishimura, T. Yajima, A. Toriumi
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 052101 (2017)
https://doi.org/10.1063/1.4997298
Published: August 2017
View articletitled, Thermal oxidation kinetics of germanium
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Journal Articles

Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation

Takuro Naramura, Masafumi Inaba, Sho Mizuno, Keisuke Igarashi, Eriko Kida, Shaili Falina Mohd Sukri, Yukihiro Shintani, Hiroshi Kawarada
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 013505 (2017)
https://doi.org/10.1063/1.4991364
Published: July 2017
View articletitled, Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation
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Includes: Supplementary data