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Journal Articles

Vacancy complexes in nonequilibrium germanium-tin semiconductors

S. Assali, M. Elsayed, J. Nicolas, M. O. Liedke, A. Wagner, M. Butterling, R. Krause-Rehberg, O. Moutanabbir
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 251907 (2019)
https://doi.org/10.1063/1.5108878
Published: June 2019
View articletitled, Vacancy complexes in nonequilibrium germanium-tin semiconductors
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Includes: Supplementary data
Journal Articles

Subnanopore filling during water vapor adsorption on microporous silica thin films as seen by low-energy positron annihilation

Kenji Ito, Shigeru Yoshimoto, Brian E. O'Rourke, Nagayasu Oshima, Kazuhiro Kumagai
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 083701 (2018)
https://doi.org/10.1063/1.5021105
Published: February 2018
View articletitled, Subnanopore filling during water vapor adsorption on microporous silica thin films as seen by low-energy positron annihilation
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Journal Articles

Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium

T. Kalliovaara, J. Slotte, I. Makkonen, J. Kujala, F. Tuomisto, R. Milazzo, G. Impellizzeri, G. Fortunato, E. Napolitani
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 182107 (2016)
https://doi.org/10.1063/1.4966947
Published: November 2016
View articletitled, Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium
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Journal Articles

Ligand-surface interactions and surface oxidation of colloidal PbSe quantum dots revealed by thin-film positron annihilation methods

Wenqin Shi, Stephan W. H. Eijt, C. S. Suchand Sandeep, Laurens D. A. Siebbeles, Arjan J. Houtepen, Sachin Kinge, Ekkes Brück, Bernardo Barbiellini, Arun Bansil
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 081602 (2016)
https://doi.org/10.1063/1.4942609
Published: February 2016
View articletitled, Ligand-surface interactions and surface oxidation of colloidal PbSe quantum dots revealed by thin-film positron annihilation methods
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Includes: Supplementary data
Journal Articles

Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors

Martin Huber, Marco Silvestri, Lauri Knuuttila, Gianmauro Pozzovivo, Andrei Andreev, Andrey Kadashchuk, Alberta Bonanni, Anders Lundskog
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 032106 (2015)
https://doi.org/10.1063/1.4927405
Published: July 2015
View articletitled, Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors
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Journal Articles

Sodium doping in ZnO crystals

N. S. Parmar, K. G. Lynn
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 022101 (2015)
https://doi.org/10.1063/1.4905594
Published: January 2015
View articletitled, Sodium doping in ZnO crystals
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Journal Articles

Understanding the presence of vacancy clusters in ZnO from a kinetic perspective

Junhyeok Bang, Youg-Sung Kim, C. H. Park, F. Gao, S. B. Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 252101 (2014)
https://doi.org/10.1063/1.4884653
Published: June 2014
View articletitled, Understanding the presence of vacancy clusters in ZnO from a kinetic perspective
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Journal Articles

The effect of vacancies on the microwave surface resistance of niobium revealed by positron annihilation spectroscopy

A. Romanenko, C. J. Edwardson, P. G. Coleman, P. J. Simpson
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 232601 (2013)
https://doi.org/10.1063/1.4811090
Published: June 2013
View articletitled, The effect of vacancies on the microwave surface resistance of niobium revealed by positron annihilation spectroscopy
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Journal Articles

Temperature dependence of conductivity enhancement induced by nanoceramic fillers in polymer electrolytes

S. Gao, X. L. Yan, J. Zhong, G. B. Xue, B. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 173903 (2013)
https://doi.org/10.1063/1.4803185
Published: April 2013
View articletitled, Temperature dependence of conductivity enhancement induced by nanoceramic fillers in polymer electrolytes
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Journal Articles

Charging-induced defect formation in LixCoO2 battery cathodes studied by positron annihilation spectroscopy

P. Parz, B. Fuchsbichler, S. Koller, B. Bitschnau, F.-A. Mautner, W. Puff, R. Würschum
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 151901 (2013)
https://doi.org/10.1063/1.4801998
Published: April 2013
View articletitled, Charging-induced defect formation in LixCoO2 battery cathodes studied by positron annihilation spectroscopy
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Journal Articles

Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride

Kenneth S. A. Butcher, Patrick P.-T. Chen, James E. Downes
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 011913 (2012)
https://doi.org/10.1063/1.3673839
Published: January 2012
View articletitled, Low activation energy for the removal of excess nitrogen in nitrogen rich indium nitride
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Journal Articles

Meissner effect funneling

S. P. McNeil, M. H. Weber, K. G. Lynn
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 054101 (2011)
https://doi.org/10.1063/1.3619850
Published: August 2011
View articletitled, Meissner effect funneling
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Journal Articles

Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance

T. Umeda, J. Isoya, T. Ohshima, S. Onoda, N. Morishita, K. Okonogi, S. Shiratake
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 041911 (2010)
https://doi.org/10.1063/1.3473763
Published: July 2010
View articletitled, Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance
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Journal Articles

Positronium annihilation and pore surface chemistry in mesoporous silica films

Chunqing He, Toshitaka Oka, Yoshinori Kobayashi, Nagayasu Oshima, Toshiyuki Ohdaira, Atsushi Kinomura, Ryoichi Suzuki
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 024102 (2007)
https://doi.org/10.1063/1.2756310
Published: July 2007
View articletitled, Positronium annihilation and pore surface chemistry in mesoporous silica films
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Journal Articles

Storage-ring-based, ultrashort positron beam source

Yuelin Li, Weiming Guo, Katherine Harkay, Wanming Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 021113 (2006)
https://doi.org/10.1063/1.2221503
Published: July 2006
View articletitled, Storage-ring-based, ultrashort positron beam source
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Journal Articles

Single shot positron annihilation lifetime spectroscopy

D. B. Cassidy, S. H. M. Deng, H. K. M. Tanaka, A. P. Mills, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 194105 (2006)
https://doi.org/10.1063/1.2203336
Published: May 2006
View articletitled, Single shot positron annihilation lifetime spectroscopy
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Journal Articles

Temperature dependence of nanoholes free volume in polypropylene glycols

G. Consolati
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 111902 (2006)
https://doi.org/10.1063/1.2186105
Published: March 2006
View articletitled, Temperature dependence of nanoholes free volume in polypropylene glycols
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Journal Articles

Alternating layers of vacancy-type and interstitial-type defects in Ge ion implanted silicon

R. Kögler, A. Peeva, A. Mücklich, F. Eichhorn, W. Skorupa
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 101918 (2006)
https://doi.org/10.1063/1.2186068
Published: March 2006
View articletitled, Alternating layers of vacancy-type and interstitial-type defects in Ge ion implanted silicon
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Journal Articles

Study of fluorine behavior in silicon by selective point defect injection

M. N. Kham, H. A. W. El Mubarek, J. M. Bonar, P. Ashburn
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 011902 (2005)
https://doi.org/10.1063/1.1984094
Published: June 2005
View articletitled, Study of fluorine behavior in silicon by selective point defect injection
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Journal Articles

Kinetics of hydrogen interaction with SiO2‐Si interface trap centers

R. Khatri, P. Asoka‐Kumar, B. Nielsen, L. O. Roellig, K. G. Lynn
Journal: Applied Physics Letters
Appl. Phys. Lett. 65, 330–332 (1994)
https://doi.org/10.1063/1.112361
Published: July 1994
View articletitled, Kinetics of hydrogen interaction with SiO2‐Si interface trap centers
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