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Journal Articles

Understanding dipole formation at dielectric/dielectric hetero-interface

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Lixing Zhou, Xiaolei Wang, Kai Han, Xueli Ma, Yanrong Wang, Jinjuan Xiang, Hong Yang, Jing Zhang, Chao Zhao, Tianchun Ye, Henry H. Radamson, Wenwu Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 181601 (2018)
https://doi.org/10.1063/1.5049423
Published: November 2018
View article titled, Understanding dipole formation at dielectric/dielectric hetero-interface
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Journal Articles

P-type surface transfer doping of oxidised silicon terminated (100) diamond

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Michael J. Sear, Alex K. Schenk, Anton Tadich, Alastair Stacey, Christopher I. Pakes
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 011605 (2017)
https://doi.org/10.1063/1.4973602
Published: January 2017
View article titled, P-type surface transfer doping of oxidised silicon terminated (100) diamond
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Journal Articles

Chemical potential shift in organic field-effect transistors identified by soft X-ray operando nano-spectroscopy

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Naoka Nagamura, Yuta Kitada, Junto Tsurumi, Hiroyuki Matsui, Koji Horiba, Itaru Honma, Jun Takeya, Masaharu Oshima
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 251604 (2015)
https://doi.org/10.1063/1.4922902
Published: June 2015
View article titled, Chemical potential shift in organic field-effect transistors identified by soft X-ray operando nano-spectroscopy
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Journal Articles

Oxidized crystalline (3 × 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

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M. Tuominen, J. Lång, J. Dahl, M. Kuzmin, M. Yasir, J. Mäkelä, J. R. Osiecki, K. Schulte, M. P. J. Punkkinen, P. Laukkanen, K. Kokko
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 011606 (2015)
https://doi.org/10.1063/1.4905655
Published: January 2015
View article titled, Oxidized crystalline (3 × 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy
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Journal Articles

Imaging and characterization of piezoelectric potential in a single bent ZnO microwire

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Chiang-Lun Wang, Shu-Ju Tsai, Jhih-Wei Chen, Hong-Wei Shiu, Lo-Yueh Chang, Kai-Hsiang Lin, Hsu-Cheng Hsu, Yi-Chun Chen, Chia-Hao Chen, Chung-Lin Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 123115 (2014)
https://doi.org/10.1063/1.4896546
Published: September 2014
View article titled, Imaging and characterization of piezoelectric potential in a single bent ZnO microwire
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Journal Articles

A possible origin of core-level shift in SiO2/Si stacks

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Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Jing Zhang, Kai Han, Hong Yang, Xueli Ma, Chao Zhao, Dapeng Chen, Tianchun Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 041603 (2013)
https://doi.org/10.1063/1.4790157
Published: January 2013
View article titled, A possible origin of core-level shift in SiO2/Si stacks
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Journal Articles

A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures

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Lee A. Walsh, Greg Hughes, Paul K. Hurley, Jun Lin, Joseph C. Woicik
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 241602 (2012)
https://doi.org/10.1063/1.4770380
Published: December 2012
View article titled, A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures
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Journal Articles

Spontaneous-polarization-induced heterojunction asymmetry in III-nitride semiconductors

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Cheng-Tai Kuo (郭承泰), Kai-Kuen Chang (張凱焜), Hung-Wei Shiu (許紘瑋), Shih-Chieh Lin (林詩傑), Chia-Hao Chen (陳家浩), Shangjr Gwo (果尚志)
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 022113 (2011)
https://doi.org/10.1063/1.3610976
Published: July 2011
View article titled, Spontaneous-polarization-induced heterojunction asymmetry in III-nitride semiconductors
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Journal Articles

Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond

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M. T. Edmonds, C. I. Pakes, S. Mammadov, W. Zhang, A. Tadich, J. Ristein, L. Ley
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 102101 (2011)
https://doi.org/10.1063/1.3561760
Published: March 2011
View article titled, Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond
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Journal Articles

Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of Al x Ga 1 − x N / GaN heterostructures

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Sen Huang, Hongwei Chen, Kevin J. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 233510 (2010)
https://doi.org/10.1063/1.3446895
Published: June 2010
View article titled, Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of Al x Ga 1 − x N / GaN heterostructures
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Journal Articles

Dual functional modification by N doping of Ta 2 O 5 : p -type conduction in visible-light-activated N-doped Ta 2 O 5

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Takeshi Morikawa, Shu Saeki, Tomiko Suzuki, Tsutomu Kajino, Tomoyoshi Motohiro
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 142111 (2010)
https://doi.org/10.1063/1.3386532
Published: April 2010
View article titled, Dual functional modification by N doping of Ta 2 O 5 : p -type conduction in visible-light-activated N-doped Ta 2 O 5
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Journal Articles

The effect of UV ozone treatment on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)

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M. G. Helander, Z. B. Wang, M. T. Greiner, Z. W. Liu, K. Lian, Z. H. Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 173302 (2009)
https://doi.org/10.1063/1.3257382
Published: October 2009
View article titled, The effect of UV ozone treatment on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
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Journal Articles

Origin of photoactivity of oxygen-deficient TiO 2 under visible light

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Hsin-Hsi Lo, Neeruganti O. Gopal, Shyue-Chu Ke
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 083126 (2009)
https://doi.org/10.1063/1.3216585
Published: August 2009
View article titled, Origin of photoactivity of oxygen-deficient TiO 2 under visible light
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Journal Articles

Interfacial reactions at Al/LiF and LiF/Al

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Z. T. Xie, W. H. Zhang, B. F. Ding, X. D. Gao, Y. T. You, Z. Y. Sun, X. M. Ding, X. Y. Hou
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 063302 (2009)
https://doi.org/10.1063/1.3077167
Published: February 2009
View article titled, Interfacial reactions at Al/LiF and LiF/Al
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Journal Articles

Energy level alignments at tris(8-hydroquinoline) aluminum/8-hydroquinolatolithium/aluminum interfaces

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Kwanghee Cho, Sang Wan Cho, Pyung Eun Jeon, Hyunbok Lee, Chung-Nam Whang, Kwangho Jeong, Seong Jun Kang, Yeonjin Yi
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 093304 (2008)
https://doi.org/10.1063/1.2890163
Published: March 2008
View article titled, Energy level alignments at tris(8-hydroquinoline) aluminum/8-hydroquinolatolithium/aluminum interfaces
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Journal Articles

Investigation of electronic structures of ordered and disordered Ni 3 Fe by electron energy loss spectroscopy

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X. Y. Zhong, Jing Zhu, A. H. Zhang, S. C. Mou
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 151912 (2006)
https://doi.org/10.1063/1.2357028
Published: October 2006
View article titled, Investigation of electronic structures of ordered and disordered Ni 3 Fe by electron energy loss spectroscopy
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Journal Articles

Potential profiling of the nanometer-scale charge-depletion layer in n - Zn O ∕ p - Ni O junction using photoemission spectroscopy

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Yukiaki Ishida, Atsushi Fujimori, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 153502 (2006)
https://doi.org/10.1063/1.2358858
Published: October 2006
View article titled, Potential profiling of the nanometer-scale charge-depletion layer in n - Zn O ∕ p - Ni O junction using photoemission spectroscopy
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Journal Articles

Reversal of doping-induced energy level shift: Au on Cs-doped tris(8-hydroxyquinoline) aluminum

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Huanjun Ding, Yongli Gao
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 051918 (2005)
https://doi.org/10.1063/1.2007858
Published: July 2005
View article titled, Reversal of doping-induced energy level shift: Au on Cs-doped tris(8-hydroxyquinoline) aluminum
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Journal Articles

Evidence of gap state formed by the charge transfer in Alq 3 ∕ NaCl ∕ Al interface studied by ultraviolet and x-ray photoelectron spectroscopy

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Yeonjin Yi, Seong Jun Kang, Kwanghee Cho, Jong Mo Koo, Kyul Han, Kyongjin Park, Myungkeun Noh, Chung-Nam Whang, Kwangho Jeong, Eun Joo Hahn
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 113503 (2005)
https://doi.org/10.1063/1.1884264
Published: March 2005
View article titled, Evidence of gap state formed by the charge transfer in Alq 3 ∕ NaCl ∕ Al interface studied by ultraviolet and x-ray photoelectron spectroscopy
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Journal Articles

Modeling of Si 2p core-level shifts at Si –( ZrO 2 ) x ( SiO 2 ) 1−x interfaces

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Feliciano Giustino, Angelo Bongiorno, Alfredo Pasquarello
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 4233–4235 (2002)
https://doi.org/10.1063/1.1526172
Published: November 2002
View article titled, Modeling of Si 2p core-level shifts at Si –( ZrO 2 ) x ( SiO 2 ) 1−x interfaces
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