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Journal Articles

High mobility p-channel GaN heterostructures grown by MOCVD through impurity engineering

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Junkang Wu, Xuelin Yang, Yingming Song, Han Yang, Zhenghao Chen, Xingyu Fu, Zhijian Yang, Shixiong Zhang, Bo Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 252103 (2024)
https://doi.org/10.1063/5.0246960
Published: December 2024
View articletitled, High mobility p-channel GaN heterostructures grown by MOCVD through impurity engineering
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Journal Articles

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

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Chunhui Huang, Zeyi Yan, Chengwei Hu, Xiong Xiong, Yanqing Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 073503 (2023)
https://doi.org/10.1063/5.0157416
Published: August 2023
View articletitled, Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering
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Journal Articles

Potassium-doped nano graphene as an intermediate layer for graphene electronics

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Takatoshi Yamada, Tomoaki Masuzawa, Yuki Okigawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 021904 (2023)
https://doi.org/10.1063/5.0147956
Published: July 2023
View articletitled, Potassium-doped nano graphene as an intermediate layer for graphene electronics
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Journal Articles

Impurities and defects in 4H silicon carbide

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Rong Wang, Yuanchao Huang, Deren Yang, Xiaodong Pi
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 180501 (2023)
https://doi.org/10.1063/5.0145350
Published: May 2023
View articletitled, Impurities and defects in 4H silicon carbide
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Journal Articles

Mobility of near surface MOVPE grown InGaAs/InP quantum wells

Open Access
Lasse Södergren, Navya Sri Garigapati, Mattias Borg, Erik Lind
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 013102 (2020)
https://doi.org/10.1063/5.0006530
Published: July 2020
View articletitled, Mobility of near surface MOVPE grown InGaAs/InP quantum wells
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Journal Articles

Limitations of In2O3 as a transparent conducting oxide

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H. Peelaers, E. Kioupakis, C. G. Van de Walle
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 082105 (2019)
https://doi.org/10.1063/1.5109569
Published: August 2019
View articletitled, Limitations of In2O3 as a transparent conducting oxide
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Includes: Supplementary data
Journal Articles

Infrared study of carrier scattering mechanism in ion-gated graphene

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Kwangnam Yu, Jiwon Jeon, Jiho Kim, Chang Won Oh, Yongseok Yoon, Beom Joon Kim, Jeong Ho Cho, E. J. Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 083503 (2019)
https://doi.org/10.1063/1.5087302
Published: February 2019
View articletitled, Infrared study of carrier scattering mechanism in ion-gated graphene
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Journal Articles

Effects of mobile charged defects on current–voltage behavior in resistive switching memories based on organic–inorganic hybrid perovskite

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Arijit Roy, Ho Won Jang, Pil-Ryung Cha
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 193301 (2018)
https://doi.org/10.1063/1.5051499
Published: November 2018
View articletitled, Effects of mobile charged defects on current–voltage behavior in resistive switching memories based on organic–inorganic hybrid perovskite
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Includes: Supplementary data
Journal Articles

Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure

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Kuan-Yu Chou, Nai-Wen Hsu, Yi-Hsin Su, Chung-Tao Chou, Po-Yuan Chiu, Yen Chuang, Jiun-Yun Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 083502 (2018)
https://doi.org/10.1063/1.5018636
Published: February 2018
View articletitled, Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure
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Journal Articles

Temperature-dependent transport properties of graphene decorated by alkali metal adatoms (Li, K)

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S. Woo, S. Hemmatiyan, T. D. Morrison, K. D. D. Rathnayaka, I. F. Lyuksyutov, D. G. Naugle
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 263502 (2017)
https://doi.org/10.1063/1.5001080
Published: December 2017
View articletitled, Temperature-dependent transport properties of graphene decorated by alkali metal adatoms (Li, K)
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Includes: Supplementary data
Journal Articles

Charge carrier velocity in graphene field-effect transistors

Open Access
Marlene Bonmann, Andrei Vorobiev, Michael A. Andersson, Jan Stake
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 233505 (2017)
https://doi.org/10.1063/1.5003684
Published: December 2017
View articletitled, Charge carrier velocity in graphene field-effect transistors
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Includes: Supplementary data
Journal Articles

Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates

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A. T. Hatke, T. Wang, C. Thomas, G. C. Gardner, M. J. Manfra
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 142106 (2017)
https://doi.org/10.1063/1.4993784
Published: October 2017
View articletitled, Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates
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Journal Articles

Effect of defect-induced carrier scattering on the thermoelectric power of graphene

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Yuki Anno, Masato Takeuchi, Masaya Matsuoka, Kuniharu Takei, Seiji Akita, Takayuki Arie
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 263501 (2017)
https://doi.org/10.1063/1.4989820
Published: June 2017
View articletitled, Effect of defect-induced carrier scattering on the thermoelectric power of graphene
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Includes: Supplementary data
Journal Articles

Microscopic theory for radiation-induced zero-resistance states in 2D electron systems: Franck-Condon blockade

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Jesús Iñarrea
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 143105 (2017)
https://doi.org/10.1063/1.4979830
Published: April 2017
View articletitled, Microscopic theory for radiation-induced zero-resistance states in 2D electron systems: Franck-Condon blockade
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Journal Articles

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

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Yanbin An, Aniruddh Shekhawat, Ashkan Behnam, Eric Pop, Ant Ural
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 223104 (2016)
https://doi.org/10.1063/1.4968824
Published: November 2016
View articletitled, Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes
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Includes: Supplementary data
Journal Articles

Charge density wave phase transition on the surface of electrostatically doped multilayer graphene

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Gen Long, Shuigang Xu, Ting Zhang, Zefei Wu, Wing Ki Wong, Tianyi Han, Jiangxiazi Lin, Yuan Cai, Ning Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 183107 (2016)
https://doi.org/10.1063/1.4966953
Published: November 2016
View articletitled, Charge density wave phase transition on the surface of electrostatically doped multilayer graphene
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Includes: Supplementary data
Journal Articles

Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation

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Seong Yeoul Kim, Seonyoung Park, Woong Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 152101 (2016)
https://doi.org/10.1063/1.4964606
Published: October 2016
View articletitled, Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation
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Includes: Supplementary data
Journal Articles

Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer

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Peng-Zhi Shao, Hai-Ming Zhao, Hui-Wen Cao, Xue-Feng Wang, Yu Pang, Yu-Xing Li, Ning-Qin Deng, Jing Zhang, Guang-Yu Zhang, Yi Yang, Sheng Zhang, Tian-Ling Ren
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 203105 (2016)
https://doi.org/10.1063/1.4950850
Published: May 2016
View articletitled, Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer
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Journal Articles

Anomalous behavior of 1/f noise in graphene near the charge neutrality point

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Shunpei Takeshita, Sadashige Matsuo, Takahiro Tanaka, Shu Nakaharai, Kazuhito Tsukagoshi, Takahiro Moriyama, Teruo Ono, Tomonori Arakawa, Kensuke Kobayashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 103106 (2016)
https://doi.org/10.1063/1.4943642
Published: March 2016
View articletitled, Anomalous behavior of 1/f noise in graphene near the charge neutrality point
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Journal Articles

Very large strain gauges based on single layer MoSe2 and WSe2 for sensing applications

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Manouchehr Hosseini, Mohammad Elahi, Mahdi Pourfath, David Esseni
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 253503 (2015)
https://doi.org/10.1063/1.4937438
Published: December 2015
View articletitled, Very large strain gauges based on single layer MoSe2 and WSe2 for sensing applications
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