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Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart

Appl. Phys. Lett. 123, 112101 (2023)

https://doi.org/10.1063/5.0159560

Published: September 2023

View article titled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Journal Articles

Low temperature memory effects in AlGaN/GaN nanochannels

H. Sánchez-Martín, E. Pérez-Martín, G. Paz-Martínez, J. Mateos, T. González, I. Íñiguez-de-la-Torre

Appl. Phys. Lett. 123, 103505 (2023)

https://doi.org/10.1063/5.0164397

Published: September 2023

View article titled, Low temperature memory effects in AlGaN/GaN nanochannels

Journal Articles

Assessment of deep levels with selenium concentration in Cd_1–xZn_xTe_1–ySe_y room temperature detector materials

Joshua W. Kleppinger, Sandeep K. Chaudhuri, Ritwik Nag, Utpal N. Roy, Ralph B. James, Krishna C. Mandal

Appl. Phys. Lett. 123, 062104 (2023)

https://doi.org/10.1063/5.0159519

Published: August 2023

View article titled, Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials

Journal Articles

Two-well injector direct-phonon terahertz quantum cascade lasers

Nathalie Lander Gower, Shiran Levy, Silvia Piperno, Sadhvikas J. Addamane, John L. Reno, Asaf Albo

Appl. Phys. Lett. 123, 061109 (2023)

https://doi.org/10.1063/5.0155250

Published: August 2023

View article titled, Two-well injector direct-phonon terahertz quantum cascade lasers

Journal Articles

An accurate method to extract thermal resistance of GaN-on-Si HEMTs

Ajay Shanbhag, Ramdas P. Khade, Sujan Sarkar, M. P. Sruthi, Deleep Nair, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta

Appl. Phys. Lett. 122, 212107 (2023)

https://doi.org/10.1063/5.0141198

Published: May 2023

View article titled, An accurate method to extract thermal resistance of GaN-on-Si HEMTs

Includes: Supplementary data

Journal Articles

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

F. Piva, M. Pilati, M. Buffolo, N. Roccato, N. Susilo, D. Hauer Vidal, A. Muhin, L. Sulmoni, T. Wernicke, M. Kneissl, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini

Appl. Phys. Lett. 122, 181102 (2023)

https://doi.org/10.1063/5.0144783

Published: May 2023

View article titled, Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

Journal Articles

High mobility of intrinsic defects in α -Ga₂O₃

Alexander Azarov, Ji-Hyeon Park, Dae-Woo Jeon, Andrej Kuznetsov

Appl. Phys. Lett. 122, 182104 (2023)

https://doi.org/10.1063/5.0149870

Published: May 2023

View article titled, High mobility of intrinsic defects in α -Ga2O3

Journal Articles

Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures

R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan

Appl. Phys. Lett. 122, 172103 (2023)

https://doi.org/10.1063/5.0149550

Published: April 2023

View article titled, Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures

Includes: Supplementary data

Journal Articles

Pb, Bi, and rare earth free X6R barium titanate–sodium niobate ceramics for high voltage capacitor applications

Yongbo Fan, Xinzhen Wang, Hongtian Li, Antonio Feteira, Dawei Wang, Ge Wang, Derek C. Sinclair, Ian M. Reaney

Appl. Phys. Lett. 122, 143901 (2023)

https://doi.org/10.1063/5.0142200

Published: April 2023

View article titled, Pb, Bi, and rare earth free X6R barium titanate–sodium niobate ceramics for high voltage capacitor applications

Includes: Supplementary data

Journal Articles

Chemical stability and functionality of Al₂O₃ artificial solid electrolyte interphases on alkali metals under open circuit voltage conditions

Kyungmi Lim, Marion Hagel, Kathrin Küster, Bernhard Fenk, Jürgen Weis, Ulrich Starke, Jelena Popovic, Joachim Maier

Appl. Phys. Lett. 122, 093902 (2023)

https://doi.org/10.1063/5.0123535

Published: March 2023

View article titled, Chemical stability and functionality of Al2O3 artificial solid electrolyte interphases on alkali metals under open circuit voltage conditions

Includes: Supplementary data

Journal Articles

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Shijie Pan, Shiwei Feng, Xuan Li, Kun Bai, Xiaozhuang Lu, Yanjie Li, Yamin Zhang, Lixing Zhou, Meng Zhang

Appl. Phys. Lett. 121, 153501 (2022)

https://doi.org/10.1063/5.0107459

Published: October 2022

View article titled, Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Journal Articles

Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β -Ga₂O₃

A. Ardenghi, O. Bierwagen, A. Falkenstein, G. Hoffmann, J. Lähnemann, M. Martin, P. Mazzolini

Appl. Phys. Lett. 121, 042109 (2022)

https://doi.org/10.1063/5.0087987

Published: July 2022

View article titled, Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β -Ga2O3

Includes: Supplementary data

Journal Articles

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Jiaxiang Chen, Wei Huang, Haolan Qu, Yu Zhang, Jianjun Zhou, Baile Chen, Xinbo Zou

Appl. Phys. Lett. 120, 212105 (2022)

https://doi.org/10.1063/5.0083362

Published: May 2022

View article titled, Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Includes: Supplementary data

Journal Articles

Evolution of magnetoresistance with temperature in the insulating van der Waals compound Ta₂Pd₃Te₅

Jianjun Tian, Chaoyang Kang, Limin She, Yeheng Song, Weifeng Zhang

Appl. Phys. Lett. 120, 161901 (2022)

https://doi.org/10.1063/5.0084852

Published: April 2022

View article titled, Evolution of magnetoresistance with temperature in the insulating van der Waals compound Ta2Pd3Te5

Includes: Supplementary data

Journal Articles

Formation energy and optical excitation mechanisms of Er in GaN semi-bulk crystals

Y. Q. Yan, J. Li, J. Y. Lin, H. X. Jiang

Appl. Phys. Lett. 120, 052103 (2022)

https://doi.org/10.1063/5.0077742

Published: February 2022

View article titled, Formation energy and optical excitation mechanisms of Er in GaN semi-bulk crystals

Journal Articles

Atomically thin In₂O₃ field-effect transistors with 10¹⁷ current on/off ratio

Adam Charnas, Zehao Lin, Zhuocheng Zhang, Peide D. Ye

Appl. Phys. Lett. 119, 263503 (2021)

https://doi.org/10.1063/5.0075166

Published: December 2021

View article titled, Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio

Journal Articles

Identification of bulk and interface state-induced threshold voltage instability in metal/SiN_x(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Yixu Yao, Qimeng Jiang, Sen Huang, Xinhua Wang, Xiaorong Luo, Hao Jin, Fuqiang Guo, Haibo Yin, Jingyuan Shi, Haojie Jiang, Junfeng Li, Wenwu Wang, Bo Shen, Ke Wei, Xinyu Liu

Appl. Phys. Lett. 119, 233502 (2021)

https://doi.org/10.1063/5.0078367

Published: December 2021

View article titled, Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Journal Articles

Suspended MoTe₂ field effect transistors with ionic liquid gate

W. R. Choi, J. H. Hong, Y. G. You, E. E. B. Campbell, S. H. Jhang

Appl. Phys. Lett. 119, 223105 (2021)

https://doi.org/10.1063/5.0065568

Published: December 2021

View article titled, Suspended MoTe2 field effect transistors with ionic liquid gate

Includes: Supplementary data

Journal Articles

Pulsed vs dc I-V measurements on Al_xV_1-xO₂ (x = 0–0.013) single crystals: Unmasking a non-thermal electric field effect on these crystals

L. Patlagan, I. Taitler, G. M. Reisner, B. Fisher

Appl. Phys. Lett. 119, 221901 (2021)

https://doi.org/10.1063/5.0073797

Published: November 2021

View article titled, Pulsed vs dc I-V measurements on AlxV1-xO2 (x = 0–0.013) single crystals: Unmasking a non-thermal electric field effect on these crystals

Includes: Supplementary data

Journal Articles

Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

D. Chen, S. Cai, N.-W. Hsu, S.-H. Huang, Y. Chuang, E. Nielsen, J.-Y. Li, C. W. Liu, T. M. Lu, D. Laroche

Appl. Phys. Lett. 119, 223103 (2021)

https://doi.org/10.1063/5.0068538

Published: November 2021

View article titled, Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

Includes: Supplementary data

NARROW

Topics

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Low temperature memory effects in AlGaN/GaN nanochannels

Assessment of deep levels with selenium concentration in Cd_1–xZn_xTe_1–ySe_y room temperature detector materials

Two-well injector direct-phonon terahertz quantum cascade lasers

An accurate method to extract thermal resistance of GaN-on-Si HEMTs

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

High mobility of intrinsic defects in α -Ga₂O₃

Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures

Pb, Bi, and rare earth free X6R barium titanate–sodium niobate ceramics for high voltage capacitor applications

Chemical stability and functionality of Al₂O₃ artificial solid electrolyte interphases on alkali metals under open circuit voltage conditions

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β -Ga₂O₃

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Evolution of magnetoresistance with temperature in the insulating van der Waals compound Ta₂Pd₃Te₅

Formation energy and optical excitation mechanisms of Er in GaN semi-bulk crystals

Atomically thin In₂O₃ field-effect transistors with 10¹⁷ current on/off ratio

Identification of bulk and interface state-induced threshold voltage instability in metal/SiN_x(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Suspended MoTe₂ field effect transistors with ionic liquid gate

Pulsed vs dc I-V measurements on Al_xV_1-xO₂ (x = 0–0.013) single crystals: Unmasking a non-thermal electric field effect on these crystals

Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

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