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Journal Articles

Interfacial second harmonic generation switching with multilayer InSe/VO2 heterostructure in telecom band

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Yuanyuan Li, Yu Sun, Liang Li, Jinhao Huang, Letian Yin, Liangxin Qiao, Jianhua Chang, Zeming Qi, Qiannan Cui, Chongwen Zou
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 143501 (2025)
https://doi.org/10.1063/5.0260593
Published: April 2025
View articletitled, Interfacial second harmonic generation switching with multilayer InSe/VO2 heterostructure in telecom band
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Journal Articles

Biorealistic response in a technology-compatible graphene synaptic transistor

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Anastasia Chouprik, Elizaveta Guberna, Islam Mutaev, Ilya Margolin, Evgeny Guberna, Maxim Rybin
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 123502 (2025)
https://doi.org/10.1063/5.0243814
Published: March 2025
View articletitled, Biorealistic response in a technology-compatible graphene synaptic transistor
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Journal Articles

Enhancing contact triboelectrification by coupling interfacial spontaneous polarization and permittivity manipulation

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Haozhen Li, Xin Zhao, Guangzhong Xie, Yuanjie Su
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 053504 (2025)
https://doi.org/10.1063/5.0248273
Published: February 2025
View articletitled, Enhancing contact triboelectrification by coupling interfacial spontaneous polarization and permittivity manipulation
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Journal Articles

Probing interfacial states in β-Ga2O3/SiO2 TFTs for high-response broad-band photodetection

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Yonghui Zhang, Rui Zhu, Wenxing Huo, Huili Liang, Zengxia Mei
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 021605 (2025)
https://doi.org/10.1063/5.0238245
Published: January 2025
View articletitled, Probing interfacial states in β-Ga2O3/SiO2 TFTs for high-response broad-band photodetection
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Journal Articles

Very low subthreshold swing normally-off diamond FET and its logic inverters

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Yuesong Liang, Wei Wang, Tianlin Niu, Genqiang Chen, Fei Wang, Shi He, Minghui Zhang, Yanfeng Wang, Feng Wen, Hong-Xing Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 263501 (2024)
https://doi.org/10.1063/5.0221365
Published: December 2024
View articletitled, Very low subthreshold swing normally-off diamond FET and its logic inverters
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Journal Articles

Evaluation of degradation phenomena in the electric potential distribution inside organic light-emitting diodes by electron holography

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Yusei Sasaki, Satoshi Anada, Noriyuki Yoshimoto, Kazuo Yamamoto
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 203505 (2024)
https://doi.org/10.1063/5.0234923
Published: November 2024
View articletitled, Evaluation of degradation phenomena in the electric potential distribution inside organic light-emitting diodes by electron holography
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Journal Articles

A perspective on guided electrophoretic transport of particles in liquid crystals

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Dinesh Kumar Sahu, Devika Venkuzhy Sudhakaran, Surajit Dhara
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 160502 (2024)
https://doi.org/10.1063/5.0235514
Published: October 2024
View articletitled, A perspective on guided electrophoretic transport of particles in liquid crystals
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Journal Articles

Trap-induced electrical degradation in edge-termination-hardened NiO/β-Ga2O3 heterojunction under 10 MeV fluence-dependent proton irradiations

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Z. L. Zhang, N. Sun, T. Q. Wang, F. Zhou, C. M. Liu, C. H. Qi, G. L. Ma, Y. Q. Zhang, H. Y. Li, Z. F. Lei, J. D. Ye, H. Lu, M. X. Huo, L. Y. Xiao
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 142106 (2024)
https://doi.org/10.1063/5.0230979
Published: October 2024
View articletitled, Trap-induced electrical degradation in edge-termination-hardened NiO/β-Ga2O3 heterojunction under 10 MeV fluence-dependent proton irradiations
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Journal Articles

Impact of orbital hybridization on spin-polarized electronic transport through Ni-MAPbI3 interfaces

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Xiangpeng Zhang, Wei Li, Yang Li, Linze Jiang, Xixiang Zhu, Haomiao Yu, Jinpeng Li, Yumeng Shi, Ding Yi, Kai Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 111601 (2024)
https://doi.org/10.1063/5.0222322
Published: September 2024
View articletitled, Impact of orbital hybridization on spin-polarized electronic transport through Ni-MAPbI3 interfaces
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Journal Articles

Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1−x)2−yTe3

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Yusuke Nakazawa, Takafumi Akiho, Kiyoshi Kanisawa, Hiroshi Irie, Norio Kumada, Koji Muraki
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 083101 (2024)
https://doi.org/10.1063/5.0215875
Published: August 2024
View articletitled, Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1−x)2−yTe3
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Journal Articles

AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates

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Pieter Cardinael, Sachin Yadav, Herwig Hahn, Ming Zhao, Sourish Banerjee, Babak Kazemi Esfeh, Christof Mauder, Barry O'Sullivan, Uthayasankaran Peralagu, Anurag Vohra, Robert Langer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 072103 (2024)
https://doi.org/10.1063/5.0212145
Published: August 2024
View articletitled, AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates
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Journal Articles

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

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Jialong Qi, Huizhen Han, Shuli Yang, Lili Kang, Huabing Yin, Gaofeng Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 042903 (2024)
https://doi.org/10.1063/5.0219253
Published: July 2024
View articletitled, Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications
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Journal Articles

High-resolution Li depth profiling in a thin-film all-solid-state battery using TOF-ERDA

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T. Majima, Y. Ogura, C. Hasegawa, S. Nakamizo, B. Tsuchiya, K. Amezawa, Y. Iriyama, K. Yasuda
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 033902 (2024)
https://doi.org/10.1063/5.0210929
Published: July 2024
View articletitled, High-resolution Li depth profiling in a thin-film all-solid-state battery using TOF-ERDA
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Journal Articles

Characteristics of grafted monocrystalline Si/ β -Ga2O3 p–n heterojunction

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Jiarui Gong, Donghyeok Kim, Hokyung Jang, Fikadu Alema, Qingxiao Wang, Jie Zhou, Yiran Li, Tien Khee Ng, Shuoyang Qiu, Yang Liu, Moheb Sheikhi, Yi Lu, Ranveer Singh, Xin Su, Haris Naeem Abbasi, Qinchen Lin, Shuwen Xie, Kelson Chabak, Gregg Jessen, Clincy Cheung, Vincent Gambin, Shubhra S. Pasayat, Andrei Osinsky, Boon S. Ooi, Chirag Gupta, Zhenqiang Ma
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 262101 (2024)
https://doi.org/10.1063/5.0208744
Published: June 2024
View articletitled, Characteristics of grafted monocrystalline Si/ β -Ga2O3 p–n heterojunction
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Journal Articles

Small polaron hopping and tunneling transport in Maxwell–Wagner relaxation dominated Al2O3/TiO2 subnanometric laminates

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Partha Sarathi Padhi, S. K. Rai, Kritika Vijay, Himanshu Srivastava, Soma Banik, R. S. Ajimsha, A. K. Srivastava, Pankaj Misra
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233504 (2024)
https://doi.org/10.1063/5.0202776
Published: June 2024
View articletitled, Small polaron hopping and tunneling transport in Maxwell–Wagner relaxation dominated Al2O3/TiO2 subnanometric laminates
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Journal Articles

Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces

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Huaqian Leng, Kunyao Xu, Hanyue Tian, Yongheng He, Yan Zhao, Minghui Xu, Xiaojiang Yu, Mark B. H. Breese, Hui Zhang, Zhengtai Liu, Dawei Shen, Xiaoqiang Wu, Jiabao Yi, Liang Qiao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 181604 (2024)
https://doi.org/10.1063/5.0202403
Published: May 2024
View articletitled, Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces
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Journal Articles

Topological semimetal interface resistivity scaling for vertical interconnect applications

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Nicholas A. Lanzillo, Utkarsh Bajpai, Ching-Tzu Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 181603 (2024)
https://doi.org/10.1063/5.0200403
Published: May 2024
View articletitled, Topological semimetal interface resistivity scaling for vertical interconnect applications
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Journal Articles

Perpendicular magnetic anisotropy in permalloy ultrathin film grown on RuO2(101) surface

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Yunzhuo Wu, Yongwei Cui, Tong Wu, Ke Pei, Haoran Chen, Hongyue Xu, Wentao Qin, Tianping Ma, Renchao Che, Zhe Yuan, Yizheng Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 162402 (2024)
https://doi.org/10.1063/5.0196404
Published: April 2024
View articletitled, Perpendicular magnetic anisotropy in permalloy ultrathin film grown on RuO2(101) surface
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Journal Articles

Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3

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Lin Hao, Tiancheng Hu, Hui Guo, Danfeng Pan, Jiandong Ye, Yugang Zhou, Hai Lu, Rong Zhang, Youdou Zheng, Dunjun Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 152103 (2024)
https://doi.org/10.1063/5.0194688
Published: April 2024
View articletitled, Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3
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Journal Articles

Achieving low-voltage operating high-mobility organic thin-film transistors by a multi-layered gate dielectric

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Qingling Xu, Haitian Wei, Yijie Lin, Zhenxiang Yan, Wei Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 143301 (2024)
https://doi.org/10.1063/5.0200735
Published: April 2024
View articletitled, Achieving low-voltage operating high-mobility organic thin-film transistors by a multi-layered gate dielectric
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Includes: Supplementary data