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Journal Articles

Trap-induced electrical degradation in edge-termination-hardened NiO/β-Ga₂O₃ heterojunction under 10 MeV fluence-dependent proton irradiations

Z. L. Zhang, N. Sun, T. Q. Wang, F. Zhou, C. M. Liu, C. H. Qi, G. L. Ma, Y. Q. Zhang, H. Y. Li, Z. F. Lei, J. D. Ye, H. Lu, M. X. Huo, L. Y. Xiao

Appl. Phys. Lett. 125, 142106 (2024)

https://doi.org/10.1063/5.0230979

Published: October 2024

View article titled, Trap-induced electrical degradation in edge-termination-hardened NiO/β-Ga2O3 heterojunction under 10 MeV fluence-dependent proton irradiations

Journal Articles

On-state electrical stress-induced degradation of NiO/β-Ga₂O₃ heterojunction pn diodes

Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Ailing Pan, Sijie Bu, Yuehua Hong, Jincheng Zhang, Lixin Guo, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 124, 193503 (2024)

https://doi.org/10.1063/5.0204051

Published: May 2024

View article titled, On-state electrical stress-induced degradation of NiO/β-Ga2O3 heterojunction pn diodes

Journal Articles

Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga₂O₃ heterojunction

Madani Labed, Saud Alotaibi, Ji Young Min, Abdulaziz Almalki, Mohamed Henini, You Seung Rim

Appl. Phys. Lett. 123, 253504 (2023)

https://doi.org/10.1063/5.0180427

Published: December 2023

View article titled, Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction

Includes: Supplementary data

Journal Articles

Surface defects related to polishing cycle in ß-Ga₂O₃ crystals grown by floating zone

Coralie Perrier, Aboulaye Traoré, Toshimitsu Ito, Hitoshi Umezawa, Etienne Gheeraert, Philippe Ferrandis

Appl. Phys. Lett. 122, 222105 (2023)

https://doi.org/10.1063/5.0149969

Published: June 2023

View article titled, Surface defects related to polishing cycle in ß-Ga2O3 crystals grown by floating zone

Journal Articles

Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures

R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan

Appl. Phys. Lett. 122, 172103 (2023)

https://doi.org/10.1063/5.0149550

Published: April 2023

View article titled, Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures

Includes: Supplementary data

Journal Articles

Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga₂O₃ p⁺–n heterojunction diodes

Z. P. Wang, H. H. Gong, X. X. Yu, T. C. Hu, X. L. Ji, F.-F. Ren, S. L. Gu, Y. D. Zheng, R. Zhang, J. D. Ye

Appl. Phys. Lett. 122, 152102 (2023)

https://doi.org/10.1063/5.0138426

Published: April 2023

View article titled, Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga2O3 p+–n heterojunction diodes

Includes: Supplementary data

Journal Articles

Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon

Yingzhe Wang, Xuefeng Zheng, Tian Zhu, Shaozhong Yue, Ailing Pan, Shengrui Xu, Peixian Li, Xiaohua Ma, Jincheng Zhang, Lixin Guo, Yue Hao

Appl. Phys. Lett. 122, 143501 (2023)

https://doi.org/10.1063/5.0133958

Published: April 2023

View article titled, Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon

Journal Articles

Electrical characterization and extraction of activation energies of the defect states in the LaAlO₃/SrTiO₃ heterostructure

Yoann Lechaux, Yu Chen, Albert Minj, Florencio Sánchez, Gervasi Herranz, Laurence Méchin, Bruno Guillet

Appl. Phys. Lett. 121, 081904 (2022)

https://doi.org/10.1063/5.0101255

Published: August 2022

View article titled, Electrical characterization and extraction of activation energies of the defect states in the LaAlO3/SrTiO3 heterostructure

Includes: Supplementary data

Journal Articles

Mechanism of reverse gate leakage current reduction in AlGaN/GaN high-electron-mobility-transistor after 3-MeV proton irradiation

Chang-Hao Sun, Chao Peng, Zhan-Gang Zhang, Jin-Bin Wang, Shao-Zhong Yue, Hong Zhang, Zi-Wen Chen, Xiao-Ping Ou-Yang, Zhi-Feng Lei, Xiang-Li Zhong

Appl. Phys. Lett. 121, 072109 (2022)

https://doi.org/10.1063/5.0102366

Published: August 2022

View article titled, Mechanism of reverse gate leakage current reduction in AlGaN/GaN high-electron-mobility-transistor after 3-MeV proton irradiation

Journal Articles

Fine structure in electronic transitions attributed to nitrogen donor in silicon carbide

N. Assmann, C. Persson, A. Yu. Kuznetsov, E. V. Monakhov

Appl. Phys. Lett. 119, 262101 (2021)

https://doi.org/10.1063/5.0074046

Published: December 2021

View article titled, Fine structure in electronic transitions attributed to nitrogen donor in silicon carbide

Includes: Supplementary data

Journal Articles

On the relation between mobile ion kinetics, device design, and doping in double-cation perovskite solar cells

A. S. Shikoh, A. Y. Polyakov, P. Gostishchev, D. S. Saranin, I. V. Shchemerov, S. I. Didenko, A. Di Carlo

Appl. Phys. Lett. 118, 093501 (2021)

https://doi.org/10.1063/5.0037776

Published: March 2021

View article titled, On the relation between mobile ion kinetics, device design, and doping in double-cation perovskite solar cells

Includes: Supplementary data

Journal Articles

Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped β -Ga₂O₃ crystals

Rujun Sun, Yu Kee Ooi, Arkka Bhattacharyya, Muad Saleh, Sriram Krishnamoorthy, Kelvin G. Lynn, Michael A. Scarpulla

Appl. Phys. Lett. 117, 212104 (2020)

https://doi.org/10.1063/5.0029442

Published: November 2020

View article titled, Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped β -Ga2O3 crystals

Includes: Supplementary data

Journal Articles

Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

Ying-Zhe Wang, Xue-Feng Zheng, Jia-Duo Zhu, Lin-Lin Xu, Sheng-Rui Xu, Ren-Li Liang, Jiang-Nan Dai, Pei-Xian Li, Xiao-Wei Zhou, Wei Mao, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 116, 203501 (2020)

https://doi.org/10.1063/5.0010540

Published: May 2020

View article titled, Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

Journal Articles

Identification of critical buffer traps in Si δ-doped β-Ga₂O₃ MESFETs

Joe F. McGlone, Zhanbo Xia, Chandan Joishi, Saurabh Lodha, Siddharth Rajan, Steven Ringel, Aaron R. Arehart

Appl. Phys. Lett. 115, 153501 (2019)

https://doi.org/10.1063/1.5118250

Published: October 2019

View article titled, Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs

Journal Articles

Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, D. S. Saranin, T. S. Le, S. I. Didenko, D. V. Kuznetsov, A. Agresti, S. Pescetelli, F. Matteocci, A. Di Carlo

Appl. Phys. Lett. 113, 263501 (2018)

https://doi.org/10.1063/1.5053845

Published: December 2018

View article titled, Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation

Includes: Supplementary data

Journal Articles

Impact of band to band tunneling in In_0.53Ga_0.47As tunnel diodes on the deep level transient spectra

S. Gupta, E. Simoen, R. Loo, Q. Smets, A. S. Verhulst, J. Lauwaert, H. Vrielinck, M. Heyns

Appl. Phys. Lett. 113, 232101 (2018)

https://doi.org/10.1063/1.5058201

Published: December 2018

View article titled, Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

Journal Articles

Defect identification based on first-principles calculations for deep level transient spectroscopy

Darshana Wickramaratne, Cyrus E. Dreyer, Bartomeu Monserrat, Jimmy-Xuan Shen, John L. Lyons, Audrius Alkauskas, Chris G. Van de Walle

Appl. Phys. Lett. 113, 192106 (2018)

https://doi.org/10.1063/1.5047808

Published: November 2018

View article titled, Defect identification based on first-principles calculations for deep level transient spectroscopy

Includes: Supplementary data

Journal Articles

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga₂O₃

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, S. J. Pearton, Chaker Fares, Jiancheng Yang, Fan Ren, Jihyun Kim, P. B. Lagov, V. S. Stolbunov, A. Kochkova

Appl. Phys. Lett. 113, 092102 (2018)

https://doi.org/10.1063/1.5049130

Published: August 2018

View article titled, Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Journal Articles

Electrical properties of extended defects in strain relaxed GeSn

Somya Gupta, Eddy Simoen, Roger Loo, Yosuke Shimura, Clement Porret, Federica Gencarelli, Kristof Paredis, Hugo Bender, Johan Lauwaert, Henk Vrielinck, Marc Heyns

Appl. Phys. Lett. 113, 022102 (2018)

https://doi.org/10.1063/1.5034573

Published: July 2018

View article titled, Electrical properties of extended defects in strain relaxed GeSn

Journal Articles

Iron and intrinsic deep level states in Ga₂O₃

M. E. Ingebrigtsen, J. B. Varley, A. Yu. Kuznetsov, B. G. Svensson, G. Alfieri, A. Mihaila, U. Badstübner, L. Vines

Appl. Phys. Lett. 112, 042104 (2018)

https://doi.org/10.1063/1.5020134

Published: January 2018

View article titled, Iron and intrinsic deep level states in Ga2O3

NARROW

Topics

Trap-induced electrical degradation in edge-termination-hardened NiO/β-Ga₂O₃ heterojunction under 10 MeV fluence-dependent proton irradiations

On-state electrical stress-induced degradation of NiO/β-Ga₂O₃ heterojunction pn diodes

Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga₂O₃ heterojunction

Surface defects related to polishing cycle in ß-Ga₂O₃ crystals grown by floating zone

Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures

Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga₂O₃ p⁺–n heterojunction diodes

Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon

Electrical characterization and extraction of activation energies of the defect states in the LaAlO₃/SrTiO₃ heterostructure

Mechanism of reverse gate leakage current reduction in AlGaN/GaN high-electron-mobility-transistor after 3-MeV proton irradiation

Fine structure in electronic transitions attributed to nitrogen donor in silicon carbide

On the relation between mobile ion kinetics, device design, and doping in double-cation perovskite solar cells

Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped β -Ga₂O₃ crystals

Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

Identification of critical buffer traps in Si δ-doped β-Ga₂O₃ MESFETs

Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation

Impact of band to band tunneling in In_0.53Ga_0.47As tunnel diodes on the deep level transient spectra

Defect identification based on first-principles calculations for deep level transient spectroscopy

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga₂O₃

Electrical properties of extended defects in strain relaxed GeSn

Iron and intrinsic deep level states in Ga₂O₃

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