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Journal Articles

Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements

K. Yokoyama, J. S. Lord, J. Miao, P. Murahari, A. J. Drew
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 252105 (2021)
https://doi.org/10.1063/5.0054291
Published: June 2021
View article titled, Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements
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Includes: Supplementary data
Journal Articles

Recombination parameters of lifetime-limiting carrier-induced defects in multicrystalline silicon for solar cells

Carlos Vargas, Yan Zhu, Gianluca Coletti, Catherine Chan, David Payne, Mallory Jensen, Ziv Hameiri
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 092106 (2017)
https://doi.org/10.1063/1.4977906
Published: March 2017
View article titled, Recombination parameters of lifetime-limiting carrier-induced defects in multicrystalline silicon for solar cells
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Journal Articles

Solution-processed amorphous silicon surface passivation layers

Mathias Mews, Christoph Mader, Stephan Traut, Tobias Sontheimer, Odo Wunnicke, Lars Korte, Bernd Rech
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 122113 (2014)
https://doi.org/10.1063/1.4896687
Published: September 2014
View article titled, Solution-processed amorphous silicon surface passivation layers
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Journal Articles

Charging-induced defect formation in LixCoO2 battery cathodes studied by positron annihilation spectroscopy

P. Parz, B. Fuchsbichler, S. Koller, B. Bitschnau, F.-A. Mautner, W. Puff, R. Würschum
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 151901 (2013)
https://doi.org/10.1063/1.4801998
Published: April 2013
View article titled, Charging-induced defect formation in Li<sub><em>x</em></sub>CoO<sub>2</sub> battery cathodes studied by positron annihilation spectroscopy
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Journal Articles

Erratum on “Determining the defect parameters of the deep aluminum-related defect center in silicon” [Appl. Phys. Lett. 91, 122109 (2007)]

Philipp Rosenits, Thomas Roth, Stefan W. Glunz
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 239904 (2011)
https://doi.org/10.1063/1.3652753
Published: December 2011
View article titled, Erratum on “Determining the defect parameters of the deep aluminum-related defect center in silicon” [Appl. Phys. Lett. 91, 122109 (2007)]
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Journal Articles

Determining the defect parameters of the deep aluminum-related defect center in silicon

Philipp Rosenits, Thomas Roth, Stefan W. Glunz, Svetlana Beljakowa
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 122109 (2007)
https://doi.org/10.1063/1.2789378
Published: September 2007
View article titled, Determining the defect parameters of the deep aluminum-related defect center in silicon
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Journal Articles

Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon

D. Macdonald, T. Roth, P. N. K. Deenapanray, T. Trupke, R. A. Bardos
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 142107 (2006)
https://doi.org/10.1063/1.2358126
Published: October 2006
View article titled, Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon
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Journal Articles

Investigation of edge recombination effects in silicon solar cell structures using photoluminescence

M. D. Abbott, J. E. Cotter, T. Trupke, R. A. Bardos
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 114105 (2006)
https://doi.org/10.1063/1.2186510
Published: March 2006
View article titled, Investigation of edge recombination effects in silicon solar cell structures using photoluminescence
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Journal Articles

Deducing nanopore structure and growth mechanisms in porogen-templated silsesquioxane thin films

Hua-Gen Peng, Richard S. Vallery, Ming Liu, William E. Frieze, David W. Gidley, Jin-Heong Yim, Hyun-Dam Jeong, Jongmin Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 161903 (2005)
https://doi.org/10.1063/1.2103402
Published: October 2005
View article titled, Deducing nanopore structure and growth mechanisms in porogen-templated silsesquioxane thin films
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Journal Articles

Study of interface structure of α- Fe/Nd 2 Fe 14 B nanocomposite magnets

X. Y. Zhang, Y. Guan, J. W. Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 80, 1966–1968 (2002)
https://doi.org/10.1063/1.1456950
Published: March 2002
View article titled, Study of interface structure of α- Fe/Nd 2 Fe 14 B nanocomposite magnets
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