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Journal Articles

Stabilization of III-nitrides at high temperatures using nitrogen plasma

Featured
Dillon Moher, Reilly Shanahan, Elijah Thimsen
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 151903 (2025)
https://doi.org/10.1063/5.0257926
Published: April 2025
View articletitled, Stabilization of III-nitrides at high temperatures using nitrogen plasma
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Journal Articles

Two-photon absorption and nonlinear refraction of AlN from ultraviolet to near-infrared

Zhong-guo Li, Wenfa Zhou, Zenghua Wang, Datang Xu, Xifeng Yang, Xuekun Hong, Yinglin Song
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 152107 (2025)
https://doi.org/10.1063/5.0260338
Published: April 2025
View articletitled, Two-photon absorption and nonlinear refraction of AlN from ultraviolet to near-infrared
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Journal Articles

Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV)

Swarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Mayand Dangi, Rajnin I. Roya, Ruixin Bai, Jiahao Chen, Qinchen Lin, Guangying Wang, Chirag Gupta, Shubhra S. Pasayat
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 152103 (2025)
https://doi.org/10.1063/5.0256300
Published: April 2025
View articletitled, Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV)
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Journal Articles

Highly oriented and wafer-scale exfoliation of h-BN grown on AlN by metalorganic chemical vapor deposition

Qichao Yang, Jiaxin Liu, Yiwei Duo, Jingnan Dong, Ziqiang Huo, Jiankun Yang, Junxue Ran, Junxi Wang, Peng Gao, Junjie Qi, Tongbo Wei
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 132103 (2025)
https://doi.org/10.1063/5.0263798
Published: April 2025
View articletitled, Highly oriented and wafer-scale exfoliation of h-BN grown on AlN by metalorganic chemical vapor deposition
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Journal Articles

Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs

Xuefeng Li, Nick Pant, Sheikh Ifatur Rahman, Rob Armitage, Siddharth Rajan, Emmanouil Kioupakis, Daniel Feezell
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 132102 (2025)
https://doi.org/10.1063/5.0258108
Published: March 2025
View articletitled, Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs
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Journal Articles

Broadband carrier capture dynamics mechanism of carbon-related defects in GaN

Zhanpeng Chen, Fangyuan Shi, Yunfei Lv, Zhengguo Xiao, Xingzhi Wu, Junyi Yang, Quanying Wu, Yinglin Song, Yu Fang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112108 (2025)
https://doi.org/10.1063/5.0260238
Published: March 2025
View articletitled, Broadband carrier capture dynamics mechanism of carbon-related defects in GaN
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Journal Articles

Epitaxial high-K barrier AlBN/GaN HEMTs

Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto, Saurabh Vishwakarma, Siyuan Ma, Akshey Dhar, Yu-Hsin Chen, Joseph Casamento, David J. Smith, Huili Grace Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112906 (2025)
https://doi.org/10.1063/5.0235294
Published: March 2025
View articletitled, Epitaxial high-K barrier AlBN/GaN HEMTs
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Journal Articles

Assessment of the crystalline orientation of nanoscale semiconductor structures via atom probe tomography

J. Cañas, A. Grenier, J. L. Rouviere, A. Harikumar, S. Ndiaye, A. Jannaud, E. Monroy, L. Rigutti
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112101 (2025)
https://doi.org/10.1063/5.0242659
Published: March 2025
View articletitled, Assessment of the crystalline orientation of nanoscale semiconductor structures via atom probe tomography
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Journal Articles

Study on thermal quenching mechanism and recombination dynamics of Si-bound exciton transition in AlN

Guoping Li, Ning Tang, Chen Ji, Qikun Wang, Liang Wu, Lei Fu, Shixiong Zhang, Shuaiyu Chen, Erfei Zhang, Tianyu Zhang, Fujun Xu, Weikun Ge, Bo Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 072102 (2025)
https://doi.org/10.1063/5.0253813
Published: February 2025
View articletitled, Study on thermal quenching mechanism and recombination dynamics of Si-bound exciton transition in AlN
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Journal Articles

Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN

Featured
Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi, Jonathan Pratt, Agnes Maneesha Dominic Merwin Xavier, Gabriel Calderon Ortiz, Brianna A. Klein, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062107 (2025)
https://doi.org/10.1063/5.0230220
Published: February 2025
View articletitled, Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN
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Journal Articles

Analysis of inversion-domain boundaries in four-layer polarity-inverted AlN structure

Editor’s Pick
Tomohiro Tamano, Kanako Shojiki, Toru Akiyama, Ryota Akaike, Takao Nakamura, Hiroto Honda, Eiki Sato, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama, Hideto Miyake
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 032108 (2025)
https://doi.org/10.1063/5.0249911
Published: January 2025
View articletitled, Analysis of inversion-domain boundaries in four-layer polarity-inverted AlN structure
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Journal Articles

Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type

Simon Litschgi, Amélie Dussaigne, Frédéric Barbier, Guillaume Veux, Anthony Cibié, Bruno Gayral, Fabian Rol
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 011107 (2025)
https://doi.org/10.1063/5.0219902
Published: January 2025
View articletitled, Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type
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Journal Articles

Observation of flexoelectric effect in PECVD silicon nitride

B. H. Nguyen, C. Wu, P. Czarnecki, V. Rochus
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012906 (2025)
https://doi.org/10.1063/5.0244972
Published: January 2025
View articletitled, Observation of flexoelectric effect in PECVD silicon nitride
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Journal Articles

Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy

Balasubramanian Sundarapandian, Mohit Raghuwanshi, Patrik Straňák, Yuan Yu, Haiyan Lyu, Mario Prescher, Lutz Kirste, Oliver Ambacher
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 011601 (2025)
https://doi.org/10.1063/5.0231694
Published: January 2025
View articletitled, Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy
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Journal Articles

Manipulating precursors of group-III nitrides for high-Al-content p-AlGaN toward efficient deep ultraviolet light emitters

Ziqi Zhang, Hansong Geng, Zhenxing Lv, Bin Tang, Xu Liu, Jingjing Jiang, Shengli Qi, Sheng Liu, Shengjun Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 241109 (2024)
https://doi.org/10.1063/5.0247937
Published: December 2024
View articletitled, Manipulating precursors of group-III nitrides for high-Al-content p-AlGaN toward efficient deep ultraviolet light emitters
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Journal Articles

Demonstration of Si-doped Al-rich regrown Al(Ga)N films on AlN/sapphire with >1015/cm3 carrier concentration using CCS-MOCVD reactor

Swarnav Mukhopadhyay, Parthasarathy Seshadri, Mobinul Haque, Shuwen Xie, Ruixin Bai, Surjava Sanyal, Guangying Wang, Chirag Gupta, Shubhra S. Pasayat
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 222102 (2024)
https://doi.org/10.1063/5.0231960
Published: November 2024
View articletitled, Demonstration of Si-doped Al-rich regrown Al(Ga)N films on AlN/sapphire with >1015/cm3 carrier concentration using CCS-MOCVD reactor
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Journal Articles

Physical properties and thermal stability of zirconium platinum nitride thin films

R. A. Gallivan, J. Manser, A. Michelini, N. Toncich, N. Abando Beldarrain, C. Vockenhuber, A. Müller, H. Galinski
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 221901 (2024)
https://doi.org/10.1063/5.0239539
Published: November 2024
View articletitled, Physical properties and thermal stability of zirconium platinum nitride thin films
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Journal Articles

Toward crack-free AlN growth on silicon (111) by introducing boron incorporated buffer layer via MOCVD

Mingtao Nong, Xiao Tang, Che-Hao Liao, Haicheng Cao, Tingang Liu, Zixian Jiang, Dhanu Chettri, Kexin Ren, Xiaohang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 172107 (2024)
https://doi.org/10.1063/5.0233425
Published: October 2024
View articletitled, Toward crack-free AlN growth on silicon (111) by introducing boron incorporated buffer layer via MOCVD
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Journal Articles

Tunable phase and electrical characteristics induced by Al content in Zr1 − xAlxN films for temperature sensors with wide temperature range

Yanjie Li, Minmin You, Yongpeng Ran, Xiantao Zhu, Zude Lin, Jingquan Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 152107 (2024)
https://doi.org/10.1063/5.0226397
Published: October 2024
View articletitled, Tunable phase and electrical characteristics induced by Al content in Zr1 − xAlxN films for temperature sensors with wide temperature range
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Journal Articles

Characterization and modeling of the mobility, threshold voltage, and subthreshold swing in p-GaN gate HEMTs at cryogenic temperatures

Shivendra Kumar Singh, Thien Sao Ngo, Tian-Li Wu, Yogesh Singh Chauhan
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 152103 (2024)
https://doi.org/10.1063/5.0223576
Published: October 2024
View articletitled, Characterization and modeling of the mobility, threshold voltage, and subthreshold swing in p-GaN gate HEMTs at cryogenic temperatures
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