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Journal Articles

High-speed InAlAs digital alloy avalanche photodiode

Wenyang Wang, Jinshan Yao, Linze Li, Huachen Ge, Luyu Wang, Liqi Zhu, Qiushi Chen, Hong Lu, Baile Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 191102 (2023)
https://doi.org/10.1063/5.0169935
Published: November 2023
View article titled, High-speed InAlAs digital alloy avalanche photodiode
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Journal Articles

Optical concentration in fully delineated mid-wave infrared T2SL detectors arrays

D. Ramos, M. Delmas, L. Höglund, R. Ivanov, L. Žurauskaitė, D. Evans, D. Rihtnesberg, L. Bendrot, S. Smuk, A. Smuk, S. Becanovic, S. Almqvist, P. Tinghag, S. Fattala, E. Costard, P. E. Hellström
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 181102 (2023)
https://doi.org/10.1063/5.0176652
Published: October 2023
View article titled, Optical concentration in fully delineated mid-wave infrared T2SL detectors arrays
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Journal Articles

193 nm laser annealing on p-GaN with enhanced hole concentration and wall-plug-efficiency in deep ultraviolet LED

Chenglong Xu, Kunzi Liu, Zhehan Yu, Zihui Zhao, Cong Chen, Jianghong Gao, Zhenhai Yang, Jichun Ye, Wei Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 182103 (2023)
https://doi.org/10.1063/5.0169647
Published: October 2023
View article titled, 193 nm laser annealing on p-GaN with enhanced hole concentration and wall-plug-efficiency in deep ultraviolet LED
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Includes: Supplementary data
Journal Articles

High external quantum efficiency monolayer MoS2(1−x)Se2x phototransistor with alloying-induced near-infrared absorption

Yuhan Li, Qiaoqiao Li, Zichen Wang, Zhiyu Huang, Juntong Zhu, Ali Imran Channa, Fan Cui, Hao Xu, Xiao Li, Liujiang Zhou, Guifu Zou
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 151103 (2023)
https://doi.org/10.1063/5.0165117
Published: October 2023
View article titled, High external quantum efficiency monolayer MoS<sub>2(1−x)</sub>Se<sub>2x</sub> phototransistor with alloying-induced near-infrared absorption
Open the PDF for High external quantum efficiency monolayer MoS<sub>2(1−x)</sub>Se<sub>2x</sub> phototransistor with alloying-induced near-infrared absorption in another window
Includes: Supplementary data
Journal Articles

Large-area SNSPD with a high count rate enhanced by a discharge acceleration circuit

Jingrou Tan, Haochen Li, Labao Zhang, Tianhao Ji, Hui Li, Yue Fei, Biao Zhang, Shuya Guo, Yanqiu Guan, Qi Chen, Xuecou Tu, Qingyuan Zhao, Xiaoqing Jia, Jian Chen, Lin Kang, Peiheng Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 142601 (2023)
https://doi.org/10.1063/5.0163627
Published: October 2023
View article titled, Large-area SNSPD with a high count rate enhanced by a discharge acceleration circuit
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Includes: Supplementary data
Journal Articles

Superconducting nanowire single photon detector on 4H-SiC substrates with saturated quantum efficiency

Mengting Si, Liping Zhou, Wei Peng, Xingyu Zhang, Ailun Yi, Chengli Wang, Hourong Zhou, Zhen Wang, Xin Ou, Lixing You
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 131106 (2023)
https://doi.org/10.1063/5.0164368
Published: September 2023
View article titled, Superconducting nanowire single photon detector on 4H-SiC substrates with saturated quantum efficiency
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Includes: Supplementary data
Journal Articles

Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an in situ InGaN decomposition template

Junwei Hu, Kun Xing, Zhihu Xia, Yimeng Sang, Xiaoping Yang, Tao Tao, Zhe Zhuang, Rong Zhang, Bin Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 111107 (2023)
https://doi.org/10.1063/5.0162548
Published: September 2023
View article titled, Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an <em>in situ</em> InGaN decomposition template
Open the PDF for Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an <em>in situ</em> InGaN decomposition template in another window