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Journal Articles

Transport of magnetically sensitive atoms in a magnetic environment

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Davlet Kumpilov, Ivan Pyrkh, Ivan Cojocaru, Polina Trofimova, Arjuna Rudnev, Vladimir Khlebnikov, Pavel Aksentsev, Ayrat Ibrahimov, Alexander Yeremeyev, Kirill Frolov, Sergey Kuzmin, Anna Zykova, Daniil Pershin, Vladislav Tsyganok, Alexey Akimov
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 244002 (2025)
https://doi.org/10.1063/5.0260263
Published: June 2025
View articletitled, Transport of magnetically sensitive atoms in a magnetic environment
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Journal Articles

Fast recovery dynamics of GaSbBi-based SESAMs for high-fluence operation

Open Access
Maximilian C. Schuchter, Joonas Hilska, Markus Peil, Eero Koivusalo, Marco Gaulke, Ursula Keller, Mircea Guina
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 221103 (2025)
https://doi.org/10.1063/5.0271391
Published: June 2025
View articletitled, Fast recovery dynamics of GaSbBi-based SESAMs for high-fluence operation
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Journal Articles

Unveiling and eliminating the parasitic hole loss in AlGaN-based deep-ultraviolet light-emitting diodes

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Chengzhi Ji, Jiaming Wang, Jing Lang, Fujun Xu, Lisheng Zhang, Guoping Li, Shuaiyu Chen, Chen Ji, Junchuan Zhang, He Xu, Xiangning Kang, Zhixin Qin, Xuelin Yang, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 212107 (2025)
https://doi.org/10.1063/5.0256851
Published: May 2025
View articletitled, Unveiling and eliminating the parasitic hole loss in AlGaN-based deep-ultraviolet light-emitting diodes
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Journal Articles

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

Open Access
Rinat Yapparov, Alejandro Quevedo, Tanay Tak, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevičius
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 211104 (2025)
https://doi.org/10.1063/5.0271165
Published: May 2025
View articletitled, Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs
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Journal Articles

Optimizing spin polarization in quantum dot vertical-gain structures through pump wavelength selection

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Najm Alhosiny, Sami S. Alharthi, James Doogan, Edmund Clarke, Thorsten Ackemann
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 191102 (2025)
https://doi.org/10.1063/5.0261768
Published: May 2025
View articletitled, Optimizing spin polarization in quantum dot vertical-gain structures through pump wavelength selection
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Journal Articles

Submicron ultraviolet single-mode microlaser enabled by electrical pumping

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Kai Xu, Xiangbo Zhou, Peng Wan, Daning Shi, Caixia Kan, Mingming Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 181101 (2025)
https://doi.org/10.1063/5.0267655
Published: May 2025
View articletitled, Submicron ultraviolet single-mode microlaser enabled by electrical pumping
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Journal Articles

Material gain and two-state lasing in quantum well-dot lasers

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Grigoriy Kornyshov, Yuriy Shernyakov, Artem Beckman, Anton Kharchenko, Alexey Payusov, Sergey Mintairov, Nikolay Kalyuzhnyy, Olga Simchuk, Julia Tkach, Vladimir Dubrovskii, Nikita Gordeev, Mikhail Maximov
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 171101 (2025)
https://doi.org/10.1063/5.0263262
Published: April 2025
View articletitled, Material gain and two-state lasing in quantum well-dot lasers
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Journal Articles

Identifying NV center axes via spatially varying microwave fields for vector magnetometry

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Taewoong Yoon, Myungjun Cha, Dohun Kim, Hyunyong Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 144002 (2025)
https://doi.org/10.1063/5.0243162
Published: April 2025
View articletitled, Identifying NV center axes via spatially varying microwave fields for vector magnetometry
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Journal Articles

Ionization effects in single-shot carrier-envelope phase detection with gas-gap devices

Open Access
Johannes Blöchl, Maximilian F. Seeger, Hartmut Schröder, Minjie Zhan, Alexander Guggenmos, Thomas Nubbemeyer, Matthias F. Kling, Boris Bergues
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 131106 (2025)
https://doi.org/10.1063/5.0246794
Published: April 2025
View articletitled, Ionization effects in single-shot carrier-envelope phase detection with gas-gap devices
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Journal Articles

Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs

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Xuefeng Li, Nick Pant, Sheikh Ifatur Rahman, Rob Armitage, Siddharth Rajan, Emmanouil Kioupakis, Daniel Feezell
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 132102 (2025)
https://doi.org/10.1063/5.0258108
Published: March 2025
View articletitled, Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs
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Journal Articles

Mid-infrared frequency combs and pulse generation based on single section interband cascade lasers

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Pavel Abajyan, Baptiste Chomet, Daniel A. Diaz-Thomas, Mohammadreza Saemian, Martin Mičica, Juliette Mangeney, Jerome Tignon, Alexei N. Baranov, Konstantinos Pantzas, Isabelle Sagnes, Carlo Sirtori, Laurent Cerutti, Sukhdeep Dhillon
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 131101 (2025)
https://doi.org/10.1063/5.0245050
Published: March 2025
View articletitled, Mid-infrared frequency combs and pulse generation based on single section interband cascade lasers
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Journal Articles

Toward flexible intensity control of resonantly scattered γ -rays using multi-frequency vibrating resonant absorber

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Aleš Stejskal, Vlastimil Vrba, Vít Procházka
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 084102 (2025)
https://doi.org/10.1063/5.0249167
Published: February 2025
View articletitled, Toward flexible intensity control of resonantly scattered γ -rays using multi-frequency vibrating resonant absorber
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Journal Articles

Aberration measurement by electron ptychography and consistency among different algorithms

Editor’s PickOpen Access
Tizian Lorenzen, Benedikt Diederichs, Charles Otieno Ogolla, Benjamin Butz, Knut Müller-Caspary
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 081602 (2025)
https://doi.org/10.1063/5.0238580
Published: February 2025
View articletitled, Aberration measurement by electron ptychography and consistency among different algorithms
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Journal Articles

Efficient room-temperature spin-amplified luminescence of an InAs quantum dot tunnel coupled with a thin GaNAs spin filter

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Satoshi Hiura, Shino Sato, Shunsuke Sakano, Junichi Takayama, Akihiro Murayama
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 052403 (2025)
https://doi.org/10.1063/5.0249606
Published: February 2025
View articletitled, Efficient room-temperature spin-amplified luminescence of an InAs quantum dot tunnel coupled with a thin GaNAs spin filter
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Journal Articles

Public quantum network: The first node

Open Access
K. Kapoor, S. Hoseini, J. Choi, B. E. Nussbaum, Y. Zhang, K. Shetty, C. Skaar, M. Ward, L. Wilson, K. Shinbrough, E. Edwards, R. Wiltfong, C. P. Lualdi, Offir Cohen, P. G. Kwiat, V. O. Lorenz
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 054002 (2025)
https://doi.org/10.1063/5.0241562
Published: February 2025
View articletitled, Public quantum network: The first node
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Journal Articles

Normal-incidence mid-infrared photodetection via intraband transitions in InGaAs/InP multiple quantum well nanowire arrays

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Yue Bian, Fanlu Zhang, Zhe Li, Dawei Liu, Jingshi Yan, Gilberto A. Umana Membreno, Wenwu Pan, Wen Lei, Lorenzo Faraone, Li Li, Mykhaylo Lysevych, Dragomir Neshev, Hark Hoe Tan, Chennupati Jagadish, Lan Fu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 041105 (2025)
https://doi.org/10.1063/5.0242858
Published: January 2025
View articletitled, Normal-incidence mid-infrared photodetection via intraband transitions in InGaAs/InP multiple quantum well nanowire arrays
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Journal Articles

Point defect diffusion in III-nitrides: A key mechanism for thermal degradation and non-radiative recombination in GaInN/GaN quantum well structures

Open Access
R. de Vasconcellos Lourenço, H. Bremers, U. Rossow, A. Hangleiter
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 032107 (2025)
https://doi.org/10.1063/5.0229144
Published: January 2025
View articletitled, Point defect diffusion in III-nitrides: A key mechanism for thermal degradation and non-radiative recombination in GaInN/GaN quantum well structures
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Journal Articles

From localization to quantum-dot chains in self-formed core–shell InGaN nanowires emitting in the red

Open Access
Rongli Deng, Haibin Lin, Qichuan Hu, Dan Wang, Bo Wu, Richard Nötzel
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 032101 (2025)
https://doi.org/10.1063/5.0252308
Published: January 2025
View articletitled, From localization to quantum-dot chains in self-formed core–shell InGaN nanowires emitting in the red
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Journal Articles

Investigation of the 4f 146s2 1S0−4f 135d6s2 (J  =  2) clock transition at 431 nm of 171Yb atoms trapped in an optical lattice

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Congyu Wang, Yuan Yao, Haosen Shi, Hongfu Yu, Longsheng Ma, Yanyi Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 031101 (2025)
https://doi.org/10.1063/5.0246836
Published: January 2025
View articletitled, Investigation of the 4f 146s2 1S0−4f 135d6s2 (J  =  2) clock transition at 431 nm of 171Yb atoms trapped in an optical lattice
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Journal Articles

Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type

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Simon Litschgi, Amélie Dussaigne, Frédéric Barbier, Guillaume Veux, Anthony Cibié, Bruno Gayral, Fabian Rol
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 011107 (2025)
https://doi.org/10.1063/5.0219902
Published: January 2025
View articletitled, Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type
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