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Journal Articles

Boosting the stability of indoor perovskite solar cells by the rational selection of electron transport layers

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Mariia M. Agapitova, Artyom V. Novikov, Alexandra N. Zhivchikova, Oleg R. Trepalin, Ilya E. Kuznetsov, Olga R. Parfenova, Kseniia D. Zagorovskaia, Nikita A. Malkin, Victor A. Brotsman, Evgeniy V. Zhizhin, Aleksandra V. Koroleva, Stepan A. Baryshev, Anastasia E. Goldt, Aleksandra G. Boldyreva, Alexander V. Akkuratov, Alexey A. Goryunkov, Sergey Y. Luchkin, Marina M. Tepliakova
Journal: Applied Physics Letters
Appl. Phys. Lett. 127, 023906 (2025)
https://doi.org/10.1063/5.0270607
Published: July 2025
View article titled, Boosting the stability of indoor perovskite solar cells by the rational selection of electron transport layers
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Journal Articles

Ultrafast 0D/1D ZnO/CuO photodetector in nanosecond scale by engineering the type-II heterostructure

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Yani Li, Heyuan Zheng, Jinhua Li, Kaixi Shi, Xuan Fang, Yunping Lan, Zhenfeng Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 083503 (2025)
https://doi.org/10.1063/5.0253662
Published: February 2025
View article titled, Ultrafast 0D/1D ZnO/CuO photodetector in nanosecond scale by engineering the type-II heterostructure
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Journal Articles

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Open Access
Saulius Marcinkevičius, Tanay Tak, Yi Chao Chow, Feng Wu, Rinat Yapparov, Steven P. DenBaars, Shuji Nakamura, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 181108 (2024)
https://doi.org/10.1063/5.0206357
Published: May 2024
View article titled, Dynamics of carrier injection through V-defects in long wavelength GaN LEDs
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Journal Articles

Carrier tunneling and transport in coupled quantum wells: Modeling and experimental verification

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Fuyi Cao (曹伏毅), Zhan Su (苏展), Cong Wang (王骢), Yuhao Chen (陈宇豪), Guoen Weng (翁国恩), Chang Wang (王长), Xiaobo Hu (胡小波), Hidefumi Akiyama (秋山英文), Junhao Chu (褚君浩), Shaoqiang Chen (陈少强)
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 161106 (2024)
https://doi.org/10.1063/5.0202473
Published: April 2024
View article titled, Carrier tunneling and transport in coupled quantum wells: Modeling and experimental verification
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Journal Articles

Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs

Open Access
Saulius Marcinkevičius, Jacob Ewing, Rinat Yapparov, Feng Wu, Shuji Nakamura, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 201102 (2023)
https://doi.org/10.1063/5.0179513
Published: November 2023
View article titled, Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs
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Journal Articles

Ultrafast excitonic radiative recombination in Al-rich semipolar AlGaN quantum wells for far-UVC emitters

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Greg Rupper, Chelsea R. Haughn, Thomas Wunderer, Zhihong Yang, Noble M. Johnson, Michael Wraback, Gregory A. Garrett
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 201101 (2023)
https://doi.org/10.1063/5.0170073
Published: November 2023
View article titled, Ultrafast excitonic radiative recombination in Al-rich semipolar AlGaN quantum wells for far-UVC emitters
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Journal Articles

Electric-field driven source of photocarriers for tunable electron spin polarization in InGaAs quantum dots

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Hiroto Kise, Satoshi Hiura, Soyoung Park, Junichi Takayama, Kazuhisa Sueoka, Akihiro Murayama
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 232405 (2023)
https://doi.org/10.1063/5.0151467
Published: June 2023
View article titled, Electric-field driven source of photocarriers for tunable electron spin polarization in InGaAs quantum dots
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Includes: Supplementary data
Journal Articles

Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate

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S. F. Chichibu, K. Nagata, M. Oya, T. Kasuya, K. Okuno, H. Ishiguro, Y. Saito, T. Takeuchi, K. Shima
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 201105 (2023)
https://doi.org/10.1063/5.0147984
Published: May 2023
View article titled, Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate
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Journal Articles

High efficiency mid-infrared interband cascade light emitting diodes with immersion lens

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X. L. Chai, Y. Zhou, W. L. Zhang, Y. H. Zhu, Z. M. Liang, Z. C. Xu, J. X. Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 121103 (2023)
https://doi.org/10.1063/5.0143226
Published: March 2023
View article titled, High efficiency mid-infrared interband cascade light emitting diodes with immersion lens
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Journal Articles

Optical properties of InGaN-based red multiple quantum wells

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Xin Hou, Shao-Sheng Fan, Huan Xu, Daisuke Iida, Yue-Jun Liu, Yang Mei, Guo-En Weng, Shao-Qiang Chen, Bao-Ping Zhang, Kazuhiro Ohkawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 261102 (2022)
https://doi.org/10.1063/5.0096155
Published: June 2022
View article titled, Optical properties of InGaN-based red multiple quantum wells
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Journal Articles

Spatiotemporal dynamics of free and bound excitons in CVD-grown MoS2 monolayer

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M. A. Akmaev, M. M. Glazov, M. V. Kochiev, P. V. Vinokurov, S. A. Smagulova, V. V. Belykh
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 113102 (2021)
https://doi.org/10.1063/5.0063372
Published: September 2021
View article titled, Spatiotemporal dynamics of free and bound excitons in CVD-grown MoS2 monolayer
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Includes: Supplementary data
Journal Articles

Role of dark exciton states in the relaxation dynamics of bright 1s excitons in monolayer WSe2

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Satoshi Kusaba, Kenji Watanabe, Takashi Taniguchi, Kazuhiro Yanagi, Koichiro Tanaka
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 093101 (2021)
https://doi.org/10.1063/5.0064795
Published: August 2021
View article titled, Role of dark exciton states in the relaxation dynamics of bright 1s excitons in monolayer WSe2
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Includes: Supplementary data
Journal Articles

Unity quantum efficiency in III-nitride quantum wells at low temperature: Experimental verification by time-resolved photoluminescence

Open Access
Philipp Farr, Shawutijiang Sidikejiang, Philipp Horenburg, Heiko Bremers, Uwe Rossow, Andreas Hangleiter
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 011106 (2021)
https://doi.org/10.1063/5.0055368
Published: July 2021
View article titled, Unity quantum efficiency in III-nitride quantum wells at low temperature: Experimental verification by time-resolved photoluminescence
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Includes: Supplementary data
Journal Articles

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

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Xiaoyu Zhao, Bin Tang, Liyan Gong, Junchun Bai, Jiafeng Ping, Shengjun Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 182102 (2021)
https://doi.org/10.1063/5.0043240
Published: May 2021
View article titled, Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes
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Journal Articles

Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop

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Christian Frankerl, Felix Nippert, Alvaro Gomez-Iglesias, Marc Patrick Hoffmann, Christian Brandl, Hans-Jürgen Lugauer, Roland Zeisel, Axel Hoffmann, Matthew John Davies
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 102107 (2020)
https://doi.org/10.1063/5.0018885
Published: September 2020
View article titled, Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop
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Includes: Supplementary data
Journal Articles

Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions

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Kenneth J. Underwood, Andrew F. Briggs, Scott D. Sifferman, Varun B. Verma, Nicholas S. Sirica, Rohit P. Prasankumar, Sae Woo Nam, Kevin L. Silverman, Seth R. Bank, Juliet T. Gopinath
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 262103 (2020)
https://doi.org/10.1063/5.0007512
Published: June 2020
View article titled, Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions
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Includes: Supplementary data
Journal Articles

Quantitative study on the mechanisms underlying the phonon bottleneck effect in InN/InGaN multiple quantum wells

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Yi Zhang, Liangliang Tang, Bo Zhang, Pei Wang, Chang Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 103104 (2020)
https://doi.org/10.1063/5.0003201
Published: March 2020
View article titled, Quantitative study on the mechanisms underlying the phonon bottleneck effect in InN/InGaN multiple quantum wells
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Includes: Supplementary data
Journal Articles

Interwell carrier transport in InGaN/(In)GaN multiple quantum wells

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Saulius Marcinkevičius, Rinat Yapparov, Leah Y. Kuritzky, Yuh-Renn Wu, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 151103 (2019)
https://doi.org/10.1063/1.5092585
Published: April 2019
View article titled, Interwell carrier transport in InGaN/(In)GaN multiple quantum wells
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Journal Articles

Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm

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M. Syperek, J. Andrzejewski, E. Rogowicz, J. Misiewicz, S. Bauer, V. I. Sichkovskyi, J. P. Reithmaier, G. Sȩk
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 221901 (2018)
https://doi.org/10.1063/1.5027596
Published: May 2018
View article titled, Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm
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Journal Articles

Carrier lifetime variation in thick 4H-SiC epilayers using two-photon absorption

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Nadeemullah A. Mahadik, Robert E. Stahlbush, Paul B. Klein, Ani Khachatrian, Stephen Buchner, Steven G. Block
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 221904 (2017)
https://doi.org/10.1063/1.5001935
Published: November 2017
View article titled, Carrier lifetime variation in thick 4H-SiC epilayers using two-photon absorption
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