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Journal Articles

Efficiency droop of AlGaN-based deep-ultraviolet miniaturized light-emitting diodes under electrical stress

Xi Zheng, Sidan Ai, Tingwei Lu, Yurong Dai, Changdong Tong, Yijun Lu, Zhong Chen, Weijie Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 231101 (2024)
https://doi.org/10.1063/5.0226549
Published: December 2024
View article titled, Efficiency droop of AlGaN-based deep-ultraviolet miniaturized light-emitting diodes under electrical stress
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Journal Articles

Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission

A. N. Yablonskiy, V. B. Shmagin, V. E. Zakharov, D. V. Yurasov, M. V. Shaleev, E. V. Demidov, A. N. Mikhaylov, D. I. Tetelbaum, E. E. Rodyakina, E. E. Morozova, D. V. Shengurov, S. A. Kraev, A. V. Novikov
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 231103 (2024)
https://doi.org/10.1063/5.0239609
Published: December 2024
View article titled, Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission
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Journal Articles

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Rinat Yapparov, Tanay Tak, Jacob Ewing, Feng Wu, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevičius
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 031108 (2024)
https://doi.org/10.1063/5.0215336
Published: July 2024
View article titled, Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects
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Journal Articles

Selective area grown photonic integrated chips for completely suppressing the Stokes shift

Rui He, Yongxiang Wang, Yijian Song, Junxue Ran, Jiankun Yang, Jin Wu, Qiang Hu, Xuecheng Wei, Junxi Wang, Tongbo Wei
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 251103 (2024)
https://doi.org/10.1063/5.0213979
Published: June 2024
View article titled, Selective area grown photonic integrated chips for completely suppressing the Stokes shift
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Journal Articles

Abnormal temperature-dependent transient electroluminescence spikes induced by the leakage of hole carriers in organic light-emitting diodes

Jing Chen, Jun Yang, Keyi Zhang, Yinqiong Zhou, Song Yang, Hong Lu, Zuo Li, Yingfei Yi, Lihong Chen, Sijie Zhang, Xiaoli Chen, Zuhong Xiong
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173510 (2024)
https://doi.org/10.1063/5.0198220
Published: April 2024
View article titled, Abnormal temperature-dependent transient electroluminescence spikes induced by the leakage of hole carriers in organic light-emitting diodes
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Includes: Supplementary data
Journal Articles

Improving AlGaN-based deep-ultraviolet light-emitting diodes: SiO2 passivation and size optimization for enhanced optoelectronic performance

Zesen Liu, Jianhong Zhang, Jiandong Ye, Yating Shi, Jie Fu, Yiwang Wang, Weizong Xu, Dong Zhou, Feng Zhou, Rong Zhang, Hai Lu, Fang-Fang Ren
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 161112 (2024)
https://doi.org/10.1063/5.0193027
Published: April 2024
View article titled, Improving AlGaN-based deep-ultraviolet light-emitting diodes: SiO<sub>2</sub> passivation and size optimization for enhanced optoelectronic performance
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Includes: Supplementary data
Journal Articles

Performance-improved narrowband near-ultraviolet emission from a simple butyl and cyanogen substituted indolocarbazole

Kaiyu Lu, Jingwei Huang, Xiang Chang, Kai Jiang, Xiuqin Yan, Xumeng Wang, Junting Yu, Jieqiong Zhu, Xiugang Wu, Weiguo Zhu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 151902 (2024)
https://doi.org/10.1063/5.0195104
Published: April 2024
View article titled, Performance-improved narrowband near-ultraviolet emission from a simple butyl and cyanogen substituted indolocarbazole
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Includes: Supplementary data
Journal Articles

High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

Dong-gun Lee, Youngjin Choi, Soojin Jung, Yongmin Kim, SooYoung Park, PunJae Choi, Sukho Yoon
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 121109 (2024)
https://doi.org/10.1063/5.0187902
Published: March 2024
View article titled, High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers
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Journal Articles

Direct observation of room-temperature high-level triplet–triplet annihilation process in 1%rubrene-doped OLEDs with a CzDBA sensitizer

Xiantong Tang, Ruiheng Pan, Xinyi Guan, Yanjun He, Sha Jiang, Yongjie Wang, Xianju Zhou, Zuhong Xiong
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 123506 (2024)
https://doi.org/10.1063/5.0185064
Published: March 2024
View article titled, Direct observation of room-temperature high-level triplet–triplet annihilation process in 1%rubrene-doped OLEDs with a CzDBA sensitizer
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Includes: Supplementary data
Journal Articles

A CsPbBr3/CdS-based hybrid bidirectional optoelectronic device with light-emitting, modulation, and detection functions

Editor’s Pick
Qin Tan, Xin Yang, Xingxia Sun, Chenguang Zhu, Yong Liu, Huawei Liu, Junyu Qu, Chenxi Liu, Xiaoli Zhu, Xiaoxia Wang, Dong Li, Shula Chen, Anlian Pan
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 121104 (2024)
https://doi.org/10.1063/5.0197235
Published: March 2024
View article titled, A CsPbBr<sub>3</sub>/CdS-based hybrid bidirectional optoelectronic device with light-emitting, modulation, and detection functions
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Includes: Supplementary data
Journal Articles

Monolithic integration of deep ultraviolet and visible light-emitting diodes for radiative sterilization application

Yi Lu, Yanan Guo, Zhiyuan Liu, Jianchang Yan, Junxi Wang, Jinmin Li, Xiaohang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 111102 (2024)
https://doi.org/10.1063/5.0180411
Published: March 2024
View article titled, Monolithic integration of deep ultraviolet and visible light-emitting diodes for radiative sterilization application
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Includes: Supplementary data
Journal Articles

Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs

Saulius Marcinkevičius, Jacob Ewing, Rinat Yapparov, Feng Wu, Shuji Nakamura, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 201102 (2023)
https://doi.org/10.1063/5.0179513
Published: November 2023
View article titled, Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs
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Journal Articles

Electroluminescence hyperspectral imaging of light-emitting diodes using a liquid crystal tunable filter

Paul R. Edwards, Jochen Bruckbauer, Douglas Cameron, Robert W. Martin
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112110 (2023)
https://doi.org/10.1063/5.0165060
Published: September 2023
View article titled, Electroluminescence hyperspectral imaging of light-emitting diodes using a liquid crystal tunable filter
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Journal Articles

Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs

Xuefeng Li, Elizabeth DeJong, Rob Armitage, Andrew M. Armstrong, Daniel Feezell
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112109 (2023)
https://doi.org/10.1063/5.0167430
Published: September 2023
View article titled, Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs
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Includes: Supplementary data
Journal Articles

Stable electroluminescence in ambipolar dopant-free lateral p–n junctions

Lin Tian, Francois Sfigakis, Arjun Shetty, Ho-Sung Kim, Nachiket Sherlekar, Sara Hosseini, Man Chun Tam, Brad van Kasteren, Brandon Buonacorsi, Zach Merino, Stephen R. Harrigan, Zbigniew Wasilewski, Jonathan Baugh, Michael E. Reimer
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 061102 (2023)
https://doi.org/10.1063/5.0160792
Published: August 2023
View article titled, Stable electroluminescence in ambipolar dopant-free lateral p–n junctions
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Includes: Supplementary data
Journal Articles

Enhanced light output power from AlGaN-based deep ultraviolet LEDs achieved by a four-in-one mesa structure

Xi Zheng, Xiyang Wu, Renlong Yang, Changdong Tong, Chenming Zhong, Fengyun Gao, Yue Lin, Guolong Chen, Yijun Lu, Zhong Chen, Weijie Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 051104 (2023)
https://doi.org/10.1063/5.0157081
Published: August 2023
View article titled, Enhanced light output power from AlGaN-based deep ultraviolet LEDs achieved by a four-in-one mesa structure
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Journal Articles

Impact of fin aspect ratio on enhancement of external quantum efficiency in single AlGaN fin light-emitting diodes pixels

Babak Nikoobakht, Yuqin Zong, Okan Koksal, Amit Agrawal, Christopher Montgomery, Jaime Rumsey, Jacob Leach, Michael Shur
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 261103 (2023)
https://doi.org/10.1063/5.0149658
Published: June 2023
View article titled, Impact of fin aspect ratio on enhancement of external quantum efficiency in single AlGaN fin light-emitting diodes pixels
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Includes: Supplementary data
Journal Articles

Confined Tamm plasmon light-emitting diodes

C. Symonds, V. Toanen, A. Gassenq, J.-M. Benoit, A. Pereira, E. Cleyet-Merle, R. Fulcrand, F. Bessueille, S. Minot, M. Morassi, A. Lemaitre, J. Bellessa
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 261105 (2023)
https://doi.org/10.1063/5.0151792
Published: June 2023
View article titled, Confined Tamm plasmon light-emitting diodes
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Journal Articles

Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs

Jakob Höpfner, Priti Gupta, Martin Guttmann, Jan Ruschel, Johannes Glaab, Tim Kolbe, Jens Rass, Arne Knauer, Christoph Stölmacker, Sven Einfeldt, Tim Wernicke, Markus Weyers, Michael Kneissl
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 151104 (2023)
https://doi.org/10.1063/5.0139200
Published: April 2023
View article titled, Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs
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Journal Articles

Spatially resolved degradation effects in UVB LEDs stressed by constant current operation

Jan Ruschel, Jens W. Tomm, Johannes Glaab, Tim Kolbe, Arne Knauer, Jens Rass, Neysha Lobo-Ploch, Tamukanashe A. Musengezi, Sven Einfeldt
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 131103 (2023)
https://doi.org/10.1063/5.0141530
Published: March 2023
View article titled, Spatially resolved degradation effects in UVB LEDs stressed by constant current operation
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