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Journal Articles

Carbon in GaN as a nonradiative recombination center

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Fangzhou Zhao, Hongyi Guan, Mark E. Turiansky, Chris G. Van de Walle
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 201106 (2025)
https://doi.org/10.1063/5.0267877
Published: May 2025
View articletitled, Carbon in GaN as a nonradiative recombination center
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Journal Articles

Temperature-dependent power generation from HgCdTe and III–V thermoradiative diodes

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Valerii Radchenkov, Jamie A. Harrison, Muhammad H. Sazzad, Phoebe M. Pearce, Andreas Pusch, Stephen P. Bremner, Peter J. Reece, Nicholas J. Ekins-Daukes, Michael P. Nielsen
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 173901 (2025)
https://doi.org/10.1063/5.0265431
Published: April 2025
View articletitled, Temperature-dependent power generation from HgCdTe and III–V thermoradiative diodes
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Journal Articles

Prediction of Shockley–Read–Hall lifetimes in strained layer superlattices for mid-wave and long-wave infrared photodetectors

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Zhi-Gang Yu, S. Krishnamurthy, Anthony Ciani, C. Grein
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 062105 (2024)
https://doi.org/10.1063/5.0229602
Published: August 2024
View articletitled, Prediction of Shockley–Read–Hall lifetimes in strained layer superlattices for mid-wave and long-wave infrared photodetectors
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Journal Articles

Revealing the ultrafast spontaneous emission in plasmon-enhanced monolayer semiconductor nano-light sources

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Jiawei Sun, Huatian Hu, Wen Chen, Yuhao Xu, Jibo Tang, Yang Li, Hongxing Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 111106 (2023)
https://doi.org/10.1063/5.0157287
Published: September 2023
View articletitled, Revealing the ultrafast spontaneous emission in plasmon-enhanced monolayer semiconductor nano-light sources
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Includes: Supplementary data
Journal Articles

Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters

Open Access
R. Finn, M. O'Donovan, P. Farrell, J. Moatti, T. Streckenbach, T. Koprucki, S. Schulz
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 241104 (2023)
https://doi.org/10.1063/5.0148168
Published: June 2023
View articletitled, Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters
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Journal Articles

Probing charge carrier and triplet dynamics in TADF-based OLEDs using transient electroluminescence studies

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Anaranya Ghorai, Sinay Simanta Behera, Sumukh Purohit, K. S. Narayan
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 203301 (2023)
https://doi.org/10.1063/5.0141772
Published: May 2023
View articletitled, Probing charge carrier and triplet dynamics in TADF-based OLEDs using transient electroluminescence studies
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Includes: Supplementary data
Journal Articles

Optical spectra of the quantum defects in metal halide perovskites

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Yu Cui, Xiao-Yi Liu, Jia-Pei Deng, Xu-Fei Ma, Zhi-Qing Li, Zi-Wu Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 232102 (2021)
https://doi.org/10.1063/5.0074039
Published: December 2021
View articletitled, Optical spectra of the quantum defects in metal halide perovskites
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Includes: Supplementary data
Journal Articles

Decorrelation of internal quantum efficiency and lasing threshold in AlGaN-based separate confinement heterostructures for UV emission

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Sergi Cuesta, Lou Denaix, Le Si Dang, Eva Monroy
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 151103 (2021)
https://doi.org/10.1063/5.0066039
Published: October 2021
View articletitled, Decorrelation of internal quantum efficiency and lasing threshold in AlGaN-based separate confinement heterostructures for UV emission
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Journal Articles

Plasmon-enhanced S2 electroluminescence from the high-lying excited state of a single porphyrin molecule

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Xiao-Jun Tian, Fan-Fang Kong, Yun-Jie Yu, Shi-Hao Jing, Xian-Biao Zhang, Yuan Liao, Yao Zhang, Yang Zhang, Zhen-Chao Dong
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 243301 (2020)
https://doi.org/10.1063/5.0027291
Published: December 2020
View articletitled, Plasmon-enhanced S2 electroluminescence from the high-lying excited state of a single porphyrin molecule
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Journal Articles

Temperature limitations for stimulated emission in 3–4 μ m range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells

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K. E. Kudryavtsev, V. V. Rumyantsev, V. Ya. Aleshkin, A. A. Dubinov, V. V. Utochkin, M. A. Fadeev, N. N. Mikhailov, G. Alymov, D. Svintsov, V. I. Gavrilenko, S. V. Morozov
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 083103 (2020)
https://doi.org/10.1063/5.0020218
Published: August 2020
View articletitled, Temperature limitations for stimulated emission in 3–4 μ m range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells
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Journal Articles

Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

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D. Y. Liu, L. C. Hao, Z. A. Chen, W. K. Zhao, Y. Shen, Y. Bian, K. Tang, J. D. Ye, S. M. Zhu, R. Zhang, Y. D. Zheng, S. L. Gu
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 022101 (2020)
https://doi.org/10.1063/5.0009615
Published: July 2020
View articletitled, Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition
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Includes: Supplementary data
Journal Articles

Atomistic analysis of radiative recombination rate, Stokes shift, and density of states in c-plane InGaN/GaN quantum wells

Open Access
Joshua M. McMahon, Daniel S. P. Tanner, Emmanouil Kioupakis, Stefan Schulz
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 181104 (2020)
https://doi.org/10.1063/5.0006128
Published: May 2020
View articletitled, Atomistic analysis of radiative recombination rate, Stokes shift, and density of states in c-plane InGaN/GaN quantum wells
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Journal Articles

Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells

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Dylan Bayerl, Emmanouil Kioupakis
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 131101 (2019)
https://doi.org/10.1063/1.5111546
Published: September 2019
View articletitled, Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells
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Includes: Supplementary data
Journal Articles

Low temperature scintillation properties of Ga2O3

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V. B. Mykhaylyk, H. Kraus, V. Kapustianyk, M. Rudko
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 081103 (2019)
https://doi.org/10.1063/1.5119130
Published: August 2019
View articletitled, Low temperature scintillation properties of Ga2O3
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Journal Articles

Broadband coherent perfect absorption of acoustic waves with bubble metascreens

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Maxime Lanoy, Reine-Marie Guillermic, Anatoliy Strybulevych, John H. Page
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 171907 (2018)
https://doi.org/10.1063/1.5051341
Published: October 2018
View articletitled, Broadband coherent perfect absorption of acoustic waves with bubble metascreens
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Journal Articles

Radiative and Auger recombination processes in indium nitride

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Andrew McAllister, Dylan Bayerl, Emmanouil Kioupakis
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 251108 (2018)
https://doi.org/10.1063/1.5038106
Published: June 2018
View articletitled, Radiative and Auger recombination processes in indium nitride
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Journal Articles

Deterministic control of radiative processes by shaping the mode field

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D. Pellegrino, F. Pagliano, A. Genco, M. Petruzzella, F. W. van Otten, A. Fiore
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 161110 (2018)
https://doi.org/10.1063/1.5026803
Published: April 2018
View articletitled, Deterministic control of radiative processes by shaping the mode field
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Journal Articles

Control of GaN facet structures through Eu doping toward achieving semipolar { 1 1 ¯ 01 } and { 2 2 ¯ 01 } InGaN/GaN quantum wells

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Takanori Kojima, Shota Takano, Ryosuke Hasegawa, Dolf Timmerman, Atsushi Koizumi, Mitsuru Funato, Yoichi Kawakami, Yasufumi Fujiwara
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 182101 (2016)
https://doi.org/10.1063/1.4965844
Published: October 2016
View articletitled, Control of GaN facet structures through Eu doping toward achieving semipolar { 1 1 ¯ 01 } and { 2 2 ¯ 01 } InGaN/GaN quantum wells
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Journal Articles

Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

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T. J. Badcock, M. Ali, T. Zhu, M. Pristovsek, R. A. Oliver, A. J. Shields
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 151110 (2016)
https://doi.org/10.1063/1.4964842
Published: October 2016
View articletitled, Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures
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Journal Articles

Revisiting radiative deep-level transitions in CuGaSe2 by photoluminescence

Open Access
Conrad Spindler, David Regesch, Susanne Siebentritt
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 032105 (2016)
https://doi.org/10.1063/1.4959557
Published: July 2016
View articletitled, Revisiting radiative deep-level transitions in CuGaSe2 by photoluminescence
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