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Journal Articles

Angular distribution separation of the extreme ultraviolet emission and suprathermal ions with energy reduction

Takeru Niinuma, Tsukasa Sugiura, Hiroki Morita, Weihua Jiang, Kazuyuki Sakaue, Gerry O'Sullivan, Shinichi Namba, Takeshi Higashiguchi
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 054104 (2024)
https://doi.org/10.1063/5.0180842
Published: February 2024
View article titled, Angular distribution separation of the extreme ultraviolet emission and suprathermal ions with energy reduction
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Journal Articles

Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Hanghai Du, Zhihong Liu, Lu Hao, Guangjie Gao, Weichuan Xing, Weihang Zhang, Yachao Zhang, Hong Zhou, Shenglei Zhao, Jincheng Zhang, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 152107 (2023)
https://doi.org/10.1063/5.0131988
Published: April 2023
View article titled, Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an <em>in situ</em> SiN/Al<sub>0.6</sub>Ga<sub>0.4</sub>N/GaN-on-Si metal-insulator high electron mobility transistor
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Journal Articles

Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress

Shanjie Li, Peiye Sun, Zhiheng Xing, Nengtao Wu, Wenliang Wang, Guoqiang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 062101 (2022)
https://doi.org/10.1063/5.0094957
Published: August 2022
View article titled, Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress
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Includes: Supplementary data
Journal Articles

Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

Editor’s Pick
K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Kojima, A. Uedono, S. Ishibashi, S. F. Chichibu
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 182106 (2021)
https://doi.org/10.1063/5.0066347
Published: November 2021
View article titled, Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg
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Journal Articles

Carrier trapping and recombination at carbon defects in bulk GaN crystals grown by HVPE

Yu Fang, Xingzhi Wu, Junyi Yang, Jianping Wang, Quanying Wu, Yinglin Song
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 112105 (2021)
https://doi.org/10.1063/5.0040641
Published: March 2021
View article titled, Carrier trapping and recombination at carbon defects in bulk GaN crystals grown by HVPE
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Includes: Supplementary data
Journal Articles

Intense and recoverable piezoluminescence in Pr3+-activated CaTiO3 with centrosymmetric structure

Editor’s Pick
Liu Yang, Lei Li, Long-Xiang Cheng, Ting-Ting Jia, Fang Hu, Shu-Hui Yu, Rong Sun, Shanshan Wang, Xiaofeng Shi, Jun-Cheng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 053901 (2021)
https://doi.org/10.1063/5.0039360
Published: February 2021
View article titled, Intense and recoverable piezoluminescence in Pr<sup>3+</sup>-activated CaTiO<sub>3</sub> with centrosymmetric structure
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Includes: Supplementary data
Journal Articles

Quenching of the Sm2+ luminescence in NaMgF3:Sm via photothermal ionization: Alternative method to determine divalent lanthanide trap depths

J. J. Schuyt, G. V. M. Williams
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 181104 (2019)
https://doi.org/10.1063/1.5122669
Published: November 2019
View article titled, Quenching of the Sm<sup>2+</sup> luminescence in NaMgF<sub>3</sub>:Sm via photothermal ionization: Alternative method to determine divalent lanthanide trap depths
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Journal Articles

Study on the charging current of surface traps in AlGaN/GaN high electron mobility transistors with a slot gate structure

Qirui Cao, Jinyan Wang, Mengjun Li, Hongyue Wang, Qianqian Tao, Bin Zhang, Wengang Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 152105 (2019)
https://doi.org/10.1063/1.5111494
Published: October 2019
View article titled, Study on the charging current of surface traps in AlGaN/GaN high electron mobility transistors with a slot gate structure
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Journal Articles

On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs

Fabian Rasinger, Martin Hauck, Gerald Rescher, Thomas Aichinger, Heiko B. Weber, Michael Krieger, Gregor Pobegen
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 152102 (2019)
https://doi.org/10.1063/1.5117829
Published: October 2019
View article titled, On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs
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Journal Articles

Atmospheric operation of original electron emission device and generation of reactive species

Tadashi Iwamatsu, Ai Tsutsui, Hiroyuki Yamaji
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 053511 (2019)
https://doi.org/10.1063/1.5077062
Published: February 2019
View article titled, Atmospheric operation of original electron emission device and generation of reactive species
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Journal Articles

Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, D. S. Saranin, T. S. Le, S. I. Didenko, D. V. Kuznetsov, A. Agresti, S. Pescetelli, F. Matteocci, A. Di Carlo
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 263501 (2018)
https://doi.org/10.1063/1.5053845
Published: December 2018
View article titled, Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation
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Includes: Supplementary data
Journal Articles

Measurement of ultrafast dynamics of photoexcited carriers in β-Ga2O3 by two-color optical pump-probe spectroscopy

Scilight
Okan Koksal, Nicholas Tanen, Debdeep Jena, Huili (Grace) Xing, Farhan Rana
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 252102 (2018)
https://doi.org/10.1063/1.5058164
Published: December 2018
View article titled, Measurement of ultrafast dynamics of photoexcited carriers in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> by two-color optical pump-probe spectroscopy
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Includes: Supplementary data
Journal Articles

Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS2 FET

Koki Taniguchi, Nan Fang, Kosuke Nagashio
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 133505 (2018)
https://doi.org/10.1063/1.5048099
Published: September 2018
View article titled, Direct observation of electron capture and emission processes by the time domain charge pumping measurement of MoS<sub>2</sub> FET
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Includes: Supplementary data
Journal Articles

Prediction of multiband luminescence due to the gallium vacancy–oxygen defect complex in GaN

Zijuan Xie, Yu Sui, John Buckeridge, Alexey A. Sokol, Thomas W. Keal, Aron Walsh
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 262104 (2018)
https://doi.org/10.1063/1.5026751
Published: June 2018
View article titled, Prediction of multiband luminescence due to the gallium vacancy–oxygen defect complex in GaN
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Journal Articles

Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

Subhash Singh, Y. N. Mohapatra
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 233301 (2017)
https://doi.org/10.1063/1.4984296
Published: June 2017
View article titled, Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric
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Includes: Supplementary data
Journal Articles

Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy

In-Hwan Lee, A. Y. Polyakov, E. B. Yakimov, N. B. Smirnov, I. V. Shchemerov, S. A. Tarelkin, S. I. Didenko, K. I. Tapero, R. A. Zinovyev, S. J. Pearton
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 112102 (2017)
https://doi.org/10.1063/1.4978641
Published: March 2017
View article titled, Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy
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Journal Articles

The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory

Cong Hu, Qi Wang, Shuai Bai, Min Xu, Deyan He, Deyuan Lyu, Jing Qi
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 073501 (2017)
https://doi.org/10.1063/1.4976512
Published: February 2017
View article titled, The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory
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Journal Articles

Hyperbolic decay of photo-created Sb2+ ions in Sn2P2S6:Sb crystals detected with electron paramagnetic resonance

Editor’s Pick
S. A. Basun, L. E. Halliburton, D. R. Evans
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 052903 (2017)
https://doi.org/10.1063/1.4975684
Published: February 2017
View article titled, Hyperbolic decay of photo-created Sb<sup>2+</sup> ions in Sn<sub>2</sub>P<sub>2</sub>S<sub>6</sub>:Sb crystals detected with electron paramagnetic resonance
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Journal Articles

Iron as a source of efficient Shockley-Read-Hall recombination in GaN

Darshana Wickramaratne, Jimmy-Xuan Shen, Cyrus E. Dreyer, Manuel Engel, Martijn Marsman, Georg Kresse, Saulius Marcinkevičius, Audrius Alkauskas, Chris G. Van de Walle
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 162107 (2016)
https://doi.org/10.1063/1.4964831
Published: October 2016
View article titled, Iron as a source of efficient Shockley-Read-Hall recombination in GaN
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Journal Articles

Gain and refractive index dynamics in p-doped InAs quantum dash semiconductor optical amplifiers

Katarzyna Komolibus, Tomasz Piwonski, Siddharth Joshi, Nicolas Chimot, John Houlihan, Francois Lelarge, Guillaume Huyet
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 031102 (2016)
https://doi.org/10.1063/1.4955460
Published: July 2016
View article titled, Gain and refractive index dynamics in p-doped InAs quantum dash semiconductor optical amplifiers
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