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Journal Articles

Annealing of blue quantum emitters in carbon-doped hexagonal boron nitride

Yongliang Chen, Angus Gale, Karin Yamamura, Jake Horder, Alexander Condos, Kenji Watanabe, Takashi Taniguchi, Milos Toth, Igor Aharonovich
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 041902 (2023)
https://doi.org/10.1063/5.0155311
Published: July 2023
View article titled, Annealing of blue quantum emitters in carbon-doped hexagonal boron nitride
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Journal Articles

Erratum: “Single β-Ga2O3 nanowire based lateral FinFET on Si” [Appl. Phys. Lett. 120 , 153501 (2022)]

Siyuan Xu, Lining Liu, Guangming Qu, Xingfei Zhang, Chunyang Jia, Songhao Wu, Yuanxiao Ma, Young Jin Lee, Guodong Wang, Ji-Hyeon Park, Yiyun Zhang, Xiaoyan Yi, Yeliang Wang, Jinmin Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 089901 (2023)
https://doi.org/10.1063/5.0145193
Published: February 2023
View article titled, Erratum: “Single <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> nanowire based lateral FinFET on Si” [Appl. Phys. Lett. 120 , 153501 (2022)]
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Journal Articles

Quantum capacitance properties of the holes in planar germanium

Jian-Kun Li, Hong-Zhang Wang, Jie-Yin Zhang, Yuan-Jun Song, Zheng-Shan Guo, Cheng-Gang Yang, Xi Lin, Jian-Jun Zhang, Jian-Hao Chen, Tian Pei
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 063102 (2023)
https://doi.org/10.1063/5.0137292
Published: February 2023
View article titled, Quantum capacitance properties of the holes in planar germanium
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Includes: Supplementary data
Journal Articles

Enhanced red emission from Eu-implanted ZnMgO layers and ZnO/ZnMgO quantum structures

A. Kozanecki, J. M. Sajkowski, J. A. Mathew, Y. Zhydachevskyy, E. Alves, M. Stachowicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 112101 (2021)
https://doi.org/10.1063/5.0060961
Published: September 2021
View article titled, Enhanced red emission from Eu-implanted ZnMgO layers and ZnO/ZnMgO quantum structures
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Journal Articles

Compensation mechanism of carriers within weakly coupled quantum wells

Yahui Zhang, Yunhao Zhao, Chenyuan Cai, Jinming Shang, Yuyang Wu, Yu Zhang, Yingqiang Xu, Chongyun Liang, Zhichuan Niu, Yi Shi, Renchao Che
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 122107 (2021)
https://doi.org/10.1063/5.0045844
Published: March 2021
View article titled, Compensation mechanism of carriers within weakly coupled quantum wells
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Includes: Supplementary data
Journal Articles

MOCVD growth of InP-based 1.3  μ m quantum dash lasers on (001) Si

Wei Luo, Ying Xue, Bei Shi, Si Zhu, Xu Dong, Kei May Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 142106 (2020)
https://doi.org/10.1063/1.5145031
Published: April 2020
View article titled, MOCVD growth of InP-based 1.3  <em>μ</em> m quantum dash lasers on (001) Si
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Includes: Supplementary data
Journal Articles

Investigation of carrier localization in InAs/AlSb type-II superlattice material system

S. Lee, H. J. Jo, S. Mathews, J. A. Simon, T. J. Ronningen, S. H. Kodati, D. R. Fink, J. S. Kim, M. Winslow, C. H. Grein, A. H. Jones, J. C. Campbell, S. Krishna
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 211601 (2019)
https://doi.org/10.1063/1.5127198
Published: November 2019
View article titled, Investigation of carrier localization in InAs/AlSb type-II superlattice material system
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Journal Articles

Transport properties of doped AlP for the development of conductive AlP/GaP distributed Bragg reflectors and their integration into light-emitting diodes

Karine Hestroffer, Dennis Sperlich, Shabnam Dadgostar, Christian Golz, Jannis Krumland, William Ted Masselink, Fariba Hatami
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 192107 (2018)
https://doi.org/10.1063/1.5024632
Published: May 2018
View article titled, Transport properties of doped AlP for the development of conductive AlP/GaP distributed Bragg reflectors and their integration into light-emitting diodes
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Journal Articles

Resonant tunneling and multiple negative differential conductance features in long wavelength interband cascade infrared photodetectors

Lin Lei, Lu Li, Wenxiang Huang, Jeremy A. Massengale, Hao Ye, Hossein Lotfi, Rui Q. Yang, Tetsuya D. Mishima, Michael B. Santos, Matthew B. Johnson
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 113504 (2017)
https://doi.org/10.1063/1.4994858
Published: September 2017
View article titled, Resonant tunneling and multiple negative differential conductance features in long wavelength interband cascade infrared photodetectors
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Journal Articles

Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop”

E. E. Mura, A. Gocalinska, G. Juska, S. T. Moroni, A. Pescaglini, E. Pelucchi
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 113101 (2017)
https://doi.org/10.1063/1.4978528
Published: March 2017
View article titled, Tuning InP self-assembled quantum structures to telecom wavelength: A versatile original InP(As) nanostructure “workshop”
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Journal Articles

Thermal behavior and carrier injection of GaAs/GaP quantum dots light emitting diodes

Christian Golz, Shabnam Dadgostar, W. Ted Masselink, Fariba Hatami
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 091101 (2017)
https://doi.org/10.1063/1.4977716
Published: February 2017
View article titled, Thermal behavior and carrier injection of GaAs/GaP quantum dots light emitting diodes
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Journal Articles

MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures

S. M. Islam, Kevin Lee, Jai Verma, Vladimir Protasenko, Sergei Rouvimov, Shyam Bharadwaj, Huili (Grace) Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 041108 (2017)
https://doi.org/10.1063/1.4975068
Published: January 2017
View article titled, MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
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Journal Articles

Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

C. Y. Chou, A. Torfi, C. Pei, W. I. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 193108 (2016)
https://doi.org/10.1063/1.4949486
Published: May 2016
View article titled, Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy
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Journal Articles

Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology

J. M. Llorens, L. Wewior, E. R. Cardozo de Oliveira, J. M. Ulloa, A. D. Utrilla, A. Guzmán, A. Hierro, B. Alén
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 183101 (2015)
https://doi.org/10.1063/1.4934841
Published: November 2015
View article titled, Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology
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Includes: Supplementary data
Journal Articles

Congruent evaporation temperature of molecular beam epitaxy grown GaAs (001) determined by local droplet etching

Ch. Heyn, D. E. Jesson
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 161601 (2015)
https://doi.org/10.1063/1.4934218
Published: October 2015
View article titled, Congruent evaporation temperature of molecular beam epitaxy grown GaAs (001) determined by local droplet etching
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Journal Articles

Quantum cascade emission in the III-nitride material system designed with effective interface grading

Alex Y. Song, Rajaram Bhat, Andrew A. Allerman, Jie Wang, Tzu-Yung Huang, Chung-En Zah, Claire F. Gmachl
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 132104 (2015)
https://doi.org/10.1063/1.4932068
Published: September 2015
View article titled, Quantum cascade emission in the III-nitride material system designed with effective interface grading
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Journal Articles

Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

Swapnadip Ghosh, Daniel Kaiser, Jose Bonilla, Talid Sinno, Sang M. Han
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 072106 (2015)
https://doi.org/10.1063/1.4928550
Published: August 2015
View article titled, Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation
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Includes: Supplementary data
Journal Articles

Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

Ke Liu, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yulian Cao, Wenjun Huang, Shuai Luo, Tao Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 041103 (2015)
https://doi.org/10.1063/1.4927659
Published: July 2015
View article titled, Longer than 1.9 <em>μ</em>m photoluminescence emission from InAs quantum structure on GaAs (001) substrate
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Journal Articles

Microscopic observation of carrier-transport dynamics in quantum-structure solar cells using a time-of-flight technique

Kasidit Toprasertpong, Naofumi Kasamatsu, Hiromasa Fujii, Tomoyuki Kada, Shigeo Asahi, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Takashi Kita, Yoshiaki Nakano
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 043901 (2015)
https://doi.org/10.1063/1.4927612
Published: July 2015
View article titled, Microscopic observation of carrier-transport dynamics in quantum-structure solar cells using a time-of-flight technique
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Includes: Supplementary data
Journal Articles

Directional luminescence control of InGaN/GaN heterostructures using quantum structure lattice arrays

Y. L. Wang, K. Y. Chen, W. C. Yang, S. Y. Chiu, H. H. Huang, Y. C. Hung, K. Y. Cheng
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 111109 (2015)
https://doi.org/10.1063/1.4916087
Published: March 2015
View article titled, Directional luminescence control of InGaN/GaN heterostructures using quantum structure lattice arrays
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