1-20 of 44
Photoreflectance
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Enhanced imaging of electronic hot spots using quantum squeezed light

Editor’s Pick
Haechan An, Ali Najjar Amiri, Dominic P. Goronzy, David A. Garcia Wetten, Michael J. Bedzyk, Ali Shakouri, Mark C. Hersam, Mahdi Hosseini
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 264001 (2024)
https://doi.org/10.1063/5.0215372
Published: June 2024
View article titled, Enhanced imaging of electronic hot spots using quantum squeezed light
Open the PDF for Enhanced imaging of electronic hot spots using quantum squeezed light in another window
Journal Articles

Optical study of local strain related disordering in CVD-grown MoSe2 monolayers

J. Krustok, T. Raadik, R. Jaaniso, V. Kiisk, I. Sildos, M. Marandi, H.-P. Komsa, B. Li, X. Zhang, Y. Gong, P. M. Ajayan
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 253106 (2016)
https://doi.org/10.1063/1.4972782
Published: December 2016
View article titled, Optical study of local strain related disordering in CVD-grown MoSe<sub>2</sub> monolayers
Open the PDF for Optical study of local strain related disordering in CVD-grown MoSe<sub>2</sub> monolayers in another window
Journal Articles

Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing

M. Motyka, M. Dyksik, K. Ryczko, R. Weih, M. Dallner, S. Höfling, M. Kamp, G. Sęk, J. Misiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 101905 (2016)
https://doi.org/10.1063/1.4943193
Published: March 2016
View article titled, Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing
Open the PDF for Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing in another window
Journal Articles

Investigation of optical transitions in InAs/GaAs(Sb)/AlAsSb quantum dots using modulation spectroscopy

Zachary S. Bittner, Staffan Hellstroem, Stephen J. Polly, Ramesh B. Laghumavarapu, Baolai Liang, Diana L. Huffaker, Seth M. Hubbard
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 253903 (2014)
https://doi.org/10.1063/1.4904076
Published: December 2014
View article titled, Investigation of optical transitions in InAs/GaAs(Sb)/AlAsSb quantum dots using modulation spectroscopy
Open the PDF for Investigation of optical transitions in InAs/GaAs(Sb)/AlAsSb quantum dots using modulation spectroscopy in another window
Journal Articles

Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy

N. A. Ulloa-Castillo, L. F. Lastras-Martínez, R. E. Balderas-Navarro, R. Herrera-Jasso, A. Lastras-Martínez
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 181905 (2014)
https://doi.org/10.1063/1.4901168
Published: November 2014
View article titled, Measurement of the shear strain of the Gd<sub>2</sub>O<sub>3</sub>/GaAs(001) interface by photoreflectance difference spectroscopy
Open the PDF for Measurement of the shear strain of the Gd<sub>2</sub>O<sub>3</sub>/GaAs(001) interface by photoreflectance difference spectroscopy in another window
Journal Articles

Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys

J. Kopaczek, M. K. Rajpalke, W. M. Linhart, T. S. Jones, M. J. Ashwin, R. Kudrawiec, T. D. Veal
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 112102 (2014)
https://doi.org/10.1063/1.4895930
Published: September 2014
View article titled, Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys
Open the PDF for Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys in another window
Journal Articles

On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the E1 and E1 + Δ1 optical transitions

L. Gluba, O. Yastrubchak, G. Sęk, W. Rudno-Rudziński, J. Sadowski, M. Kulik, W. Rzodkiewicz, M. Rawski, T. Andrearczyk, J. Misiewicz, T. Wosinski, J. Żuk
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 032408 (2014)
https://doi.org/10.1063/1.4891329
Published: July 2014
View article titled, On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the <em>E</em><sub>1</sub> and <em>E</em><sub>1</sub> + Δ<sub>1</sub> optical transitions
Open the PDF for On the nature of the Mn-related states in the band structure of (Ga,Mn)As alloys via probing the <em>E</em><sub>1</sub> and <em>E</em><sub>1</sub> + Δ<sub>1</sub> optical transitions in another window
Journal Articles

Resonant nature of intrinsic defect energy levels in PbTe revealed by infrared photoreflectance spectroscopy

Bingpo Zhang, Chunfeng Cai, Shuqiang Jin, Zhenyu Ye, Huizhen Wu, Zhen Qi
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 022109 (2014)
https://doi.org/10.1063/1.4890621
Published: July 2014
View article titled, Resonant nature of intrinsic defect energy levels in PbTe revealed by infrared photoreflectance spectroscopy
Open the PDF for Resonant nature of intrinsic defect energy levels in PbTe revealed by infrared photoreflectance spectroscopy in another window
Journal Articles

Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance

J. Kopaczek, R. Kudrawiec, W. M. Linhart, M. K. Rajpalke, K. M. Yu, T. S. Jones, M. J. Ashwin, J. Misiewicz, T. D. Veal
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 261907 (2013)
https://doi.org/10.1063/1.4858967
Published: December 2013
View article titled, Temperature dependence of the band gap of GaSb<sub>1−x</sub>Bi<sub>x</sub> alloys with 0 &lt; x ≤ 0.042 determined by photoreflectance
Open the PDF for Temperature dependence of the band gap of GaSb<sub>1−x</sub>Bi<sub>x</sub> alloys with 0 < x ≤ 0.042 determined by photoreflectance in another window
Journal Articles

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

Y. J. Kuang (邝彦瑾), K. M. Yu, R. Kudrawiec, A. V. Luce, M. Ting, W. Walukiewicz, C. W. Tu
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 112105 (2013)
https://doi.org/10.1063/1.4795782
Published: March 2013
View article titled, GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy
Open the PDF for GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy in another window
Journal Articles

Increasing the optical transition oscillator strength in GaSb-based type II quantum wells

F. Janiak, G. Sęk, M. Motyka, K. Ryczko, J. Misiewicz, A. Bauer, S. Höfling, M. Kamp, A. Forchel
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 231908 (2012)
https://doi.org/10.1063/1.4726423
Published: June 2012
View article titled, Increasing the optical transition oscillator strength in GaSb-based type II quantum wells
Open the PDF for Increasing the optical transition oscillator strength in GaSb-based type II quantum wells in another window
Journal Articles

Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics

H. Chouaib, C. Bru-Chevallier
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 172102 (2012)
https://doi.org/10.1063/1.4705408
Published: April 2012
View article titled, Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics
Open the PDF for Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics in another window
Journal Articles

Structural and optical characterization of SixGe1−x − ySny alloys grown by molecular beam epitaxy

Hai Lin, Robert Chen, Weisheng Lu, Yijie Huo, Theodore I. Kamins, James S. Harris
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 141908 (2012)
https://doi.org/10.1063/1.3701732
Published: April 2012
View article titled, Structural and optical characterization of Si<sub>x</sub>Ge<sub>1−x</sub> <sub>−</sub> <sub>y</sub>Sn<sub>y</sub> alloys grown by molecular beam epitaxy
Open the PDF for Structural and optical characterization of Si<sub>x</sub>Ge<sub>1−x</sub> <sub>−</sub> <sub>y</sub>Sn<sub>y</sub> alloys grown by molecular beam epitaxy in another window
Journal Articles

Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy

Hai Lin, Robert Chen, Weisheng Lu, Yijie Huo, Theodore I. Kamins, James S. Harris
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 102109 (2012)
https://doi.org/10.1063/1.3692735
Published: March 2012
View article titled, Investigation of the direct band gaps in Ge<sub>1−x</sub>Sn<sub>x</sub> alloys with strain control by photoreflectance spectroscopy
Open the PDF for Investigation of the direct band gaps in Ge<sub>1−x</sub>Sn<sub>x</sub> alloys with strain control by photoreflectance spectroscopy in another window
Journal Articles

Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs

Jun Shao, Lu Chen, Wei Lu, Xiang Lü, Liangqing Zhu, Shaoling Guo, Li He, Junhao Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 121915 (2010)
https://doi.org/10.1063/1.3373595
Published: March 2010
View article titled, Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs
Open the PDF for Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs in another window
Journal Articles

Effect of thermal annealing on the blueshift of energy gap and nitrogen rearrangement in GaAsSbN

Yan-Ting Lin, Ta-Chun Ma, Hao-Hsiung Lin, Jiun-De Wu, Ying-Sheng Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 011903 (2010)
https://doi.org/10.1063/1.3282797
Published: January 2010
View article titled, Effect of thermal annealing on the blueshift of energy gap and nitrogen rearrangement in GaAsSbN
Open the PDF for Effect of thermal annealing on the blueshift of energy gap and nitrogen rearrangement in GaAsSbN in another window
Journal Articles

The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

R. Kudrawiec, V.-M. Korpijärvi, P. Poloczek, J. Misiewicz, P. Laukkanen, J. Pakarinen, M. Dumitrescu, M. Guina, M. Pessa
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 261909 (2009)
https://doi.org/10.1063/1.3275712
Published: December 2009
View article titled, The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells
Open the PDF for The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells in another window
Journal Articles

Photoreflectance and Fourier transform infrared spectroscopy study of intersubband transitions of a Zn x Cd 1 − x Se / Zn x ′ Cd y ′ Mg 1 − x ′ − y ′ Se asymmetric coupled quantum well structure for quantum cascade laser application

J. D. Wu, C. T. Huang, Y. S. Huang, W. O. Charles, A. Shen, M. C. Tamargo
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 191905 (2009)
https://doi.org/10.1063/1.3263951
Published: November 2009
View article titled, Photoreflectance and Fourier transform infrared spectroscopy study of intersubband transitions of a Zn x Cd 1 − x Se / Zn x ′ Cd y ′ Mg 1 − x ′ − y ′ Se asymmetric coupled quantum well structure for quantum cascade laser application
Open the PDF for Photoreflectance and Fourier transform infrared spectroscopy study of intersubband transitions of a Zn x Cd 1 − x Se / Zn x ′ Cd y ′ Mg 1 − x ′ − y ′ Se asymmetric coupled quantum well structure for quantum cascade laser application in another window
Journal Articles

Modifications of direct transition energies in β -FeSi 2 epitaxial films grown by molecular beam epitaxy

K. Noda, Y. Terai, S. Hashimoto, K. Yoneda, Y. Fujiwara
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 241907 (2009)
https://doi.org/10.1063/1.3155204
Published: June 2009
View article titled, Modifications of direct transition energies in β -FeSi 2 epitaxial films grown by molecular beam epitaxy
Open the PDF for Modifications of direct transition energies in β -FeSi 2 epitaxial films grown by molecular beam epitaxy in another window
Journal Articles

Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys

R. Kudrawiec, J. Misiewicz, Q. Zhuang, A. M. R. Godenir, A. Krier
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 151902 (2009)
https://doi.org/10.1063/1.3117239
Published: April 2009
View article titled, Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys
Open the PDF for Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys in another window