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Journal Articles

Onset of tetrahedral interstitial formation in GaAsN alloys

J. J. P. Cooper, T. Jen, A. Novak, Z. Xi, L. Qi, F. U. Naab, Y. Q. Wang, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 161108 (2024)
https://doi.org/10.1063/5.0192454
Published: April 2024
View article titled, Onset of tetrahedral interstitial formation in GaAsN alloys
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Includes: Supplementary data
Journal Articles

Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

J. Occena, T. Jen, J. W. Mitchell, W. M. Linhart, E.-M. Pavelescu, R. Kudrawiec, Y. Q. Wang, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 082106 (2019)
https://doi.org/10.1063/1.5057424
Published: August 2019
View article titled, Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
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Includes: Supplementary data
Journal Articles

Bi-enhanced N incorporation in GaAsNBi alloys

J. Occena, T. Jen, E. E. Rizzi, T. M. Johnson, J. Horwath, Y. Q. Wang, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 242102 (2017)
https://doi.org/10.1063/1.4984227
Published: June 2017
View article titled, Bi-enhanced N incorporation in GaAsNBi alloys
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Journal Articles

Identifying the dominant interstitial complex in dilute GaAsN alloys

T. Jen, G. Vardar, Y. Q. Wang, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 221904 (2015)
https://doi.org/10.1063/1.4935857
Published: November 2015
View article titled, Identifying the dominant interstitial complex in dilute GaAsN alloys
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Journal Articles

Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), ( 000 1 ¯ ), and ( 11 2 ¯ ) surfaces

Gang Liu, Can Xu, Boris Yakshinskiy, Leszek Wielunski, Torgny Gustafsson, Joseph Bloch, Sarit Dhar, Leonard C. Feldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 123502 (2015)
https://doi.org/10.1063/1.4916266
Published: March 2015
View article titled, Deuterium absorption from the D<sub>2</sub>O exposure of oxidized 4H-SiC (0001), ( 000 1 ¯ ), and ( 11 2 ¯ ) surfaces
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Journal Articles

Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

Gang Liu, Can Xu, Boris Yakshinskiy, Leszek Wielunski, Torgny Gustafsson, Joseph Bloch, Sarit Dhar, Leonard C. Feldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 191602 (2014)
https://doi.org/10.1063/1.4901719
Published: November 2014
View article titled, Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties
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Journal Articles

Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100)

G. V. Soares, T. O. Feijó, I. J. R. Baumvol, C. Aguzzoli, C. Krug, C. Radtke
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 042901 (2014)
https://doi.org/10.1063/1.4862979
Published: January 2014
View article titled, Thermally-driven H interaction with HfO<sub>2</sub> films deposited on Ge(100) and Si(100)
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Journal Articles

Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities

B. De Vries, U. Wahl, S. Ruffenach, O. Briot, A. Vantomme
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 172108 (2013)
https://doi.org/10.1063/1.4826705
Published: October 2013
View article titled, Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities
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Journal Articles

The influence of neighboring vacancies and their charge state on the atomic migration of LaAlO3

Takashi Yamamoto, Teruyasu Mizoguchi
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 211910 (2013)
https://doi.org/10.1063/1.4807818
Published: May 2013
View article titled, The influence of neighboring vacancies and their charge state on the atomic migration of LaAlO<sub>3</sub>
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Journal Articles

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

Y. J. Kuang (邝彦瑾), K. M. Yu, R. Kudrawiec, A. V. Luce, M. Ting, W. Walukiewicz, C. W. Tu
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 112105 (2013)
https://doi.org/10.1063/1.4795782
Published: March 2013
View article titled, GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy
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Journal Articles

Oxygen transport and GeO2 stability during thermal oxidation of Ge

S. R. M. da Silva, G. K. Rolim, G. V. Soares, I. J. R. Baumvol, C. Krug, L. Miotti, F. L. Freire, Jr., M. E. H. M. da Costa, C. Radtke
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 191907 (2012)
https://doi.org/10.1063/1.4712619
Published: May 2012
View article titled, Oxygen transport and GeO<sub>2</sub> stability during thermal oxidation of Ge
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Journal Articles

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells

Hari P. Nair, Adam M. Crook, Kin M. Yu, Seth R. Bank
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 021103 (2012)
https://doi.org/10.1063/1.3675618
Published: January 2012
View article titled, Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells
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Journal Articles

Trapping of implanted He at Cu/Nb interfaces measured by neutron reflectometry

Mikhail Zhernenkov, Michael S. Jablin, Amit Misra, Michael Nastasi, Yongqiang Wang, Michael J. Demkowicz, Jon K. Baldwin, Jarek Majewski
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 241913 (2011)
https://doi.org/10.1063/1.3600642
Published: June 2011
View article titled, Trapping of implanted He at Cu/Nb interfaces measured by neutron reflectometry
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Journal Articles

The effect of excess atomic volume on He bubble formation at fcc–bcc interfaces

M. J. Demkowicz, D. Bhattacharyya, I. Usov, Y. Q. Wang, M. Nastasi, A. Misra
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 161903 (2010)
https://doi.org/10.1063/1.3502594
Published: October 2010
View article titled, The effect of excess atomic volume on He bubble formation at fcc–bcc interfaces
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Journal Articles

Blister formation in ion-implanted GaAs: Role of diffusivity

R. R. Collino, B. B. Dick, F. Naab, Y. Q. Wang, M. D. Thouless, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 111912 (2009)
https://doi.org/10.1063/1.3224199
Published: September 2009
View article titled, Blister formation in ion-implanted GaAs: Role of diffusivity
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Journal Articles

Highly dense amorphous Nb 2 O 5 films with closed nanosized pores

M. Vinnichenko, A. Rogozin, D. Grambole, F. Munnik, A. Kolitsch, W. Möller, O. Stenzel, S. Wilbrandt, A. Chuvilin, U. Kaiser
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 081904 (2009)
https://doi.org/10.1063/1.3212731
Published: August 2009
View article titled, Highly dense amorphous Nb 2 O 5 films with closed nanosized pores
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Journal Articles

Influence of N interstitials on the electronic properties of GaAsN alloys

Y. Jin, R. M. Jock, H. Cheng, Y. He, A. M. Mintarov, Y. Wang, C. Kurdak, J. L. Merz, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 062109 (2009)
https://doi.org/10.1063/1.3187915
Published: August 2009
View article titled, Influence of N interstitials on the electronic properties of GaAsN alloys
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Journal Articles

Fluorine microimaging and quantification using nuclear reaction analysis: A tool for validating tissue distribution of positron emission tomography tracers

G. Devès, S. Roudeau, A. Carmona, S. Lavielle, K. Gionnet, G. Déléris, R. Ortega
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 023701 (2009)
https://doi.org/10.1063/1.3173808
Published: July 2009
View article titled, Fluorine microimaging and quantification using nuclear reaction analysis: A tool for validating tissue distribution of positron emission tomography tracers
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Journal Articles

A model of interface defect formation in silicon wafer bonding

S. Vincent, I. Radu, D. Landru, F. Letertre, F. Rieutord
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 101914 (2009)
https://doi.org/10.1063/1.3100780
Published: March 2009
View article titled, A model of interface defect formation in silicon wafer bonding
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Journal Articles

Direct measurement of oxygen incorporation into thin film oxides at room temperature upon ultraviolet photon irradiation

Masaru Tsuchiya, Vaithiyalingam Shutthanandan, Mark H. Engelhard, Shriram Ramanathan
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 263109 (2008)
https://doi.org/10.1063/1.3058691
Published: December 2008
View article titled, Direct measurement of oxygen incorporation into thin film oxides at room temperature upon ultraviolet photon irradiation
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