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Journal Articles

Submicron ultraviolet single-mode microlaser enabled by electrical pumping

Featured
Kai Xu, Xiangbo Zhou, Peng Wan, Daning Shi, Caixia Kan, Mingming Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 181101 (2025)
https://doi.org/10.1063/5.0267655
Published: May 2025
View articletitled, Submicron ultraviolet single-mode microlaser enabled by electrical pumping
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Journal Articles

Obtaining bulk-like correlated oxide surfaces with protective caps

Amit Cohen, Maria Baskin, Lishai Shoham, Shaked Caspi, Pini Shekhter, Tien-Lin Lee, Scott A. Chambers, Lior Kornblum
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 161602 (2025)
https://doi.org/10.1063/5.0256840
Published: April 2025
View articletitled, Obtaining bulk-like correlated oxide surfaces with protective caps
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Journal Articles

Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching

Tingang Liu, Zhiyuan Liu, Haicheng Cao, Mingtao Nong, Xiao Tang, Zixian Jiang, Glen Isaac Maciel Garcia, Kexin Ren, Xiaohang Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 152109 (2025)
https://doi.org/10.1063/5.0251499
Published: April 2025
View articletitled, Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
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Journal Articles

(KCo)3 + co-substitution and enhancement of negative thermal expansion in (KCo)xSc2-xMo3O12 ceramics

Zhanlu Shao, Obedisco T. Johnny, Faraz Hafeez, Hongfei Liu, Zhiping Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 151904 (2025)
https://doi.org/10.1063/5.0255155
Published: April 2025
View articletitled, (KCo)3 + co-substitution and enhancement of negative thermal expansion in (KCo)xSc2-xMo3O12 ceramics
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Journal Articles

Hot electron spectroscopy for intrinsic Schottky barrier determination at metal–InGaZnO interfaces

Yuan Kai, Jiawei Wang, Congyan Lu, Ling Li, Chao Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 143502 (2025)
https://doi.org/10.1063/5.0248175
Published: April 2025
View articletitled, Hot electron spectroscopy for intrinsic Schottky barrier determination at metal–InGaZnO interfaces
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Journal Articles

Highly oriented and wafer-scale exfoliation of h-BN grown on AlN by metalorganic chemical vapor deposition

Qichao Yang, Jiaxin Liu, Yiwei Duo, Jingnan Dong, Ziqiang Huo, Jiankun Yang, Junxue Ran, Junxi Wang, Peng Gao, Junjie Qi, Tongbo Wei
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 132103 (2025)
https://doi.org/10.1063/5.0263798
Published: April 2025
View articletitled, Highly oriented and wafer-scale exfoliation of h-BN grown on AlN by metalorganic chemical vapor deposition
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Journal Articles

Enhanced p-type GaN Ohmic contacts through strategic metal schemes and annealing

Donghan Kim, Soo-Young Moon, Sung-Bum Bae, Hyeon-Tak Kwak, Hongsik Park, Hyung-Seok Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 122108 (2025)
https://doi.org/10.1063/5.0249410
Published: March 2025
View articletitled, Enhanced p-type GaN Ohmic contacts through strategic metal schemes and annealing
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Journal Articles

Surface-driven structural evolution and electronic transition of SbSe chains on Au(111)

Li Li, Qiwei Tian, Shuangping Liao, Sahar Izadi Vishkayi, Li Zhang, Long-Jing Yin, Yuan Tian, Meysam Bagheri Tagani, Lijie Zhang, Zhihui Qin
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 111904 (2025)
https://doi.org/10.1063/5.0260537
Published: March 2025
View articletitled, Surface-driven structural evolution and electronic transition of SbSe chains on Au(111)
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Journal Articles

Enhanced figure-of-merit and fatigue resistance of strontium barium niobate for pyroelectric energy conversion

Fan Zhang, Ruiheng Geng, Xinyue Huang, Xiaotong Peng, Jun Xu, Xian Chen, Chenbo Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 112902 (2025)
https://doi.org/10.1063/5.0256350
Published: March 2025
View articletitled, Enhanced figure-of-merit and fatigue resistance of strontium barium niobate for pyroelectric energy conversion
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Journal Articles

Observation of interface dipole modulation in an Al2O3/SnOx/SiO2 stack

Yoshiharu Kirihara, Shunichi Ito, Akira Yasui, Ryousuke Ishikawa, Hiroshi Nohira
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 101601 (2025)
https://doi.org/10.1063/5.0259875
Published: March 2025
View articletitled, Observation of interface dipole modulation in an Al2O3/SnOx/SiO2 stack
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Journal Articles

Achieving high mobility and enhanced illumination stability in InPrO homojunction thin-film transistors

Editor’s Pick
Jianting Wu, Min Guo, Qian Wu, Songjia Han, Xubing Lu, Xiaoci Liang, Chuan Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 093502 (2025)
https://doi.org/10.1063/5.0246425
Published: March 2025
View articletitled, Achieving high mobility and enhanced illumination stability in InPrO homojunction thin-film transistors
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Journal Articles

Large positive VFB shift achieved by a band alignment modulated with insertion of Ga2O3 dipole layer

Xiao-Na Zhu, Lei Shen, Yu-Chun Li, Yu-Dong Lv, Cai-Yu Shi, Teng Huang, Zi-Ying Huang, David Wei Zhang, Hong-Liang Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 083506 (2025)
https://doi.org/10.1063/5.0252518
Published: February 2025
View articletitled, Large positive VFB shift achieved by a band alignment modulated with insertion of Ga2O3 dipole layer
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Journal Articles

Growth of nitrogen-doped (010) β-Ga2O3 by plasma-assisted molecular beam epitaxy using an O2/N2 gas mixture

Steve Rebollo, Yizheng Liu, Carl Peterson, Sriram Krishnamoorthy, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 082106 (2025)
https://doi.org/10.1063/5.0250037
Published: February 2025
View articletitled, Growth of nitrogen-doped (010) β-Ga2O3 by plasma-assisted molecular beam epitaxy using an O2/N2 gas mixture
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Journal Articles

Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN

X. Q. Guo, F. J. Xu, J. Lang, J. M. Wang, L. S. Zhang, C. Ji, C. Z. Ji, Z. Y. Zhang, F. Y. Tan, Y. Wu, X. N. Kang, X. L. Yang, N. Tang, X. Q. Wang, W. K. Ge, B. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 082104 (2025)
https://doi.org/10.1063/5.0221287
Published: February 2025
View articletitled, Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN
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Journal Articles

Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs

Hongseung Lee, Jaewook Yoo, Hyeonjun Song, Binhyeong Lee, Soon Joo Yoon, Seongbin Lim, Jo Hak Jeong, Soyeon Kim, Minah Park, Seohyeon Park, Sojin Jung, Bhishma Pandit, Taehwan Moon, Jin-Ha Hwang, Kiyoung Lee, Yoon Kyeung Lee, Keun Heo, Hagyoul Bae
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 063504 (2025)
https://doi.org/10.1063/5.0238211
Published: February 2025
View articletitled, Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs
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Journal Articles

Oxygen vacancy distribution and phase composition in scaled, Hf0.5Zr0.5O2-based ferroelectric capacitors

T. Iung, L. Pérez Ramírez, A. Gloskovskii, C.-Yi Cho, M.-Y. Lao, S. De, T.-H Hou, C. Lubin, M. Gros-Jean, N. Barrett
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062903 (2025)
https://doi.org/10.1063/5.0245595
Published: February 2025
View articletitled, Oxygen vacancy distribution and phase composition in scaled, Hf0.5Zr0.5O2-based ferroelectric capacitors
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Journal Articles

Facile synthesis of vanadium oxide thin films by atomic layer deposition and post-annealing

Y. K. Sun, G. D. Zhang, L. Hu, R. R. Zhang, R. H. Wei, X. B. Zhu, Y. P. Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 051902 (2025)
https://doi.org/10.1063/5.0245902
Published: February 2025
View articletitled, Facile synthesis of vanadium oxide thin films by atomic layer deposition and post-annealing
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Journal Articles

Nonradiative quenching of EPR signals in germanium-doped AlGaN: Evidence for DX-center formation

Editor’s Pick
Jason Forbus, Darshana Wickramaratne, John L. Lyons, M. E. Zvanut
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 042101 (2025)
https://doi.org/10.1063/5.0249701
Published: January 2025
View articletitled, Nonradiative quenching of EPR signals in germanium-doped AlGaN: Evidence for DX-center formation
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Journal Articles

Growth and characterization of high-quality Zr doped AlN epilayers

Editor’s Pick
H. Alwan, N. K. Hossain, J. Li, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022106 (2025)
https://doi.org/10.1063/5.0250015
Published: January 2025
View articletitled, Growth and characterization of high-quality Zr doped AlN epilayers
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Journal Articles

A synaptic transistor with a stacked layer of SiNx and SiO2 deposited from hexamethyldisiloxane/O2

Chong Peng, Yiming Liu, Cong Yu, Yi Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022901 (2025)
https://doi.org/10.1063/5.0232721
Published: January 2025
View articletitled, A synaptic transistor with a stacked layer of SiNx and SiO2 deposited from hexamethyldisiloxane/O2
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