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Journal Articles

Soft nitridation of GaAs(100) by hydrazine sulfide solutions: Effect on surface recombination and surface barrier

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V. L. Berkovits, D. Paget, A. N. Karpenko, V. P. Ulin, O. E. Tereshchenko
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 022104 (2007)
https://doi.org/10.1063/1.2402233
Published: January 2007
View articletitled, Soft nitridation of GaAs(100) by hydrazine sulfide solutions: Effect on surface recombination and surface barrier
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Journal Articles

Structural and dielectric properties of epitaxial Ba 1−x Sr x TiO 3 / Bi 4 Ti 3 O 12 / ZrO 2 heterostructures grown on silicon

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C. L. Canedy, S. Aggarwal, Hao Li, T. Venkatesan, R. Ramesh, F. W. Van Keuls, R. R. Romanofsky, F. A. Miranda
Journal: Applied Physics Letters
Appl. Phys. Lett. 77, 1523–1525 (2000)
https://doi.org/10.1063/1.1290724
Published: September 2000
View articletitled, Structural and dielectric properties of epitaxial Ba 1−x Sr x TiO 3 / Bi 4 Ti 3 O 12 / ZrO 2 heterostructures grown on silicon
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Journal Articles

Ohmic contacts to p-6 H–SiC using focused ion-beam surface-modification and pulsed laser epitaxial TiN deposition

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A. A. Iliadis, S. N. Andronescu, K. Edinger, J. H. Orloff, R. D. Vispute, V. Talyansky, R. P. Sharma, T. Venkatesan, M. C. Wood, K. A. Jones
Journal: Applied Physics Letters
Appl. Phys. Lett. 73, 3545–3547 (1998)
https://doi.org/10.1063/1.122802
Published: December 1998
View articletitled, Ohmic contacts to p-6 H–SiC using focused ion-beam surface-modification and pulsed laser epitaxial TiN deposition
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Journal Articles

Si/Pt Ohmic contacts to p -type 4H–SiC

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N. A. Papanicolaou, A. Edwards, M. V. Rao, W. T. Anderson
Journal: Applied Physics Letters
Appl. Phys. Lett. 73, 2009–2011 (1998)
https://doi.org/10.1063/1.122351
Published: October 1998
View articletitled, Si/Pt Ohmic contacts to p -type 4H–SiC
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Journal Articles

In situ investigation of degradation in polymeric electroluminescent devices using time-resolved confocal laser scanning microscope

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Lee-Mi Do, Kwangjoon Kim, Taehyoung Zyung, Hong-Ku Shim, Jang-Joo Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 3470–3472 (1997)
https://doi.org/10.1063/1.118516
Published: June 1997
View articletitled, In situ investigation of degradation in polymeric electroluminescent devices using time-resolved confocal laser scanning microscope
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Journal Articles

Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications

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O. Blum, K. M. Geib, M. J. Hafich, J. F. Klem, C. I. H. Ashby
Journal: Applied Physics Letters
Appl. Phys. Lett. 68, 3129–3131 (1996)
https://doi.org/10.1063/1.115800
Published: May 1996
View articletitled, Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications
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Journal Articles

Preparation of homogeneous Cu(InGa)Se2 films by selenization of metal precursors in H2Se atmosphere

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M. Marudachalam, H. Hichri, R. Klenk, R. W. Birkmire, W. N. Shafarman, J. M. Schultz
Journal: Applied Physics Letters
Appl. Phys. Lett. 67, 3978–3980 (1995)
https://doi.org/10.1063/1.114424
Published: December 1995
View articletitled, Preparation of homogeneous Cu(InGa)Se2 films by selenization of metal precursors in H2Se atmosphere
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Journal Articles

Enhanced Jc’s of YBa2Cu3O7−x–Ag ex situ annealed coevaporated films on LaAlO3 (100) substrates

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T. Clausen, M. Ejrnæs, M. Olesen, K. Hilger, J. L. Skov, P. Bodin, A. Kühle, I. Chorkendorff
Journal: Applied Physics Letters
Appl. Phys. Lett. 65, 2350–2352 (1994)
https://doi.org/10.1063/1.113038
Published: October 1994
View articletitled, Enhanced Jc’s of YBa2Cu3O7−x–Ag ex situ annealed coevaporated films on LaAlO3 (100) substrates
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Journal Articles

Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films

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E. F. Schubert, M. Passlack, M. Hong, J. Mannerts, R. L. Opila, L. N. Pfeiffer, K. W. West, C. G. Bethea, G. J. Zydzik
Journal: Applied Physics Letters
Appl. Phys. Lett. 64, 2976–2978 (1994)
https://doi.org/10.1063/1.111376
Published: May 1994
View articletitled, Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films
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Journal Articles

Metalorganic chemical vapor deposition of TiN films for advanced metallization

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Gurtej S. Sandhu, Scott G. Meikle, Trung T. Doan
Journal: Applied Physics Letters
Appl. Phys. Lett. 62, 240–242 (1993)
https://doi.org/10.1063/1.108977
Published: January 1993
View articletitled, Metalorganic chemical vapor deposition of TiN films for advanced metallization
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Journal Articles

Selective growth of GaAs wire structures by electron beam induced metalorganic chemical vapor deposition

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T. Takahashi, Y. Arakawa, M. Nishioka, T. Ikoma
Journal: Applied Physics Letters
Appl. Phys. Lett. 60, 68–70 (1992)
https://doi.org/10.1063/1.107376
Published: January 1992
View articletitled, Selective growth of GaAs wire structures by electron beam induced metalorganic chemical vapor deposition
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Journal Articles

Positive and negative ‘‘resistless’’ lithography of GaAs by electron beam exposure and thermal Cl2 etching

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E. M. Clausen, Jr., J. P. Harbison, C. C. Chang, P. S. D. Lin, H. G. Craighead, L. T. Florez
Journal: Applied Physics Letters
Appl. Phys. Lett. 57, 1043–1045 (1990)
https://doi.org/10.1063/1.103560
Published: September 1990
View articletitled, Positive and negative ‘‘resistless’’ lithography of GaAs by electron beam exposure and thermal Cl2 etching
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Journal Articles

Laser photochemical deposition of germanium‐silicon alloy thin films

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Hubert H. Burke, Irving P. Herman, Viken Tavitian, J. Gary Eden
Journal: Applied Physics Letters
Appl. Phys. Lett. 55, 253–255 (1989)
https://doi.org/10.1063/1.102384
Published: July 1989
View articletitled, Laser photochemical deposition of germanium‐silicon alloy thin films
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Journal Articles

Infrared absorption of Ir and IrSi thin films on Si substrates

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C. K. Chen, B‐Y. Tsaur, M. C. Finn
Journal: Applied Physics Letters
Appl. Phys. Lett. 54, 310–312 (1989)
https://doi.org/10.1063/1.100995
Published: January 1989
View articletitled, Infrared absorption of Ir and IrSi thin films on Si substrates
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Journal Articles

Deposition of indium antimonide films by metalorganic magnetron sputtering

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James B. Webb, C. Halpin
Journal: Applied Physics Letters
Appl. Phys. Lett. 47, 831–833 (1985)
https://doi.org/10.1063/1.95999
Published: October 1985
View articletitled, Deposition of indium antimonide films by metalorganic magnetron sputtering
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Journal Articles

SF6 enhanced nitridation of silicon in active nitrogen

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R. V. Giridhar, K. Rose
Journal: Applied Physics Letters
Appl. Phys. Lett. 45, 578–580 (1984)
https://doi.org/10.1063/1.95287
Published: September 1984
View articletitled, SF6 enhanced nitridation of silicon in active nitrogen
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Journal Articles

Electrical properties of selectively deposited tungsten thin films

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W. A. Metz, J. E. Mahan, V. Malhotra, T. L. Martin
Journal: Applied Physics Letters
Appl. Phys. Lett. 44, 1139–1141 (1984)
https://doi.org/10.1063/1.94669
Published: June 1984
View articletitled, Electrical properties of selectively deposited tungsten thin films
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