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Journal Articles

Two-dimensional WTe2/Cr3Te4 heterostructures with high current-induced magnetization switching ratio

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Kun He, Bailing Li, Sumei Wu, Chen Yi, Yingying Liu, Shaojun Liu, Di Wang, Ruixia Wu, Jia Li, Bo Li, Xidong Duan
Journal: Applied Physics Letters
Appl. Phys. Lett. 127, 011903 (2025)
https://doi.org/10.1063/5.0275035
Published: July 2025
View articletitled, Two-dimensional WTe2/Cr3Te4 heterostructures with high current-induced magnetization switching ratio
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Journal Articles

Switchable optoelectronic performance in bilayer WSe2 homojunctions with alternating AA-AB stacking

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Biwen He, Siwei Luo, Gencai Guo, Xixi Huang, Xiang Qi, Jianxin Zhong
Journal: Applied Physics Letters
Appl. Phys. Lett. 127, 013101 (2025)
https://doi.org/10.1063/5.0275254
Published: July 2025
View articletitled, Switchable optoelectronic performance in bilayer WSe2 homojunctions with alternating AA-AB stacking
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Journal Articles

Magnetic and stackable flexible photonic crystal perfect absorbers

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Wenjing Lv, Haoye Qin, Feng Wang, Han Zhang, Jing Guo, Jidong Du, Hongsheng Sun, Qinghua Song, Bo Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 127, 011701 (2025)
https://doi.org/10.1063/5.0267097
Published: July 2025
View articletitled, Magnetic and stackable flexible photonic crystal perfect absorbers
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Journal Articles

Effects of defects in graphene on molecular beam epitaxy of CdTe on graphene/Ge

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Yanhui Zhang (张燕辉), Haitao Jiang (姜海涛), Zaihong Yang (杨再洪), Liuyan Fan (范柳燕), Ziteng Zhang (张孜腾), Can Zhou (周灿), Yajie Wang (王亚杰), Changlin Zheng (郑长林), Xiaohao Zhou (周孝好), Pingping Chen (陈平平)
Journal: Applied Physics Letters
Appl. Phys. Lett. 127, 011904 (2025)
https://doi.org/10.1063/5.0281027
Published: July 2025
View articletitled, Effects of defects in graphene on molecular beam epitaxy of CdTe on graphene/Ge
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Journal Articles

Interband cascade devices with switchable laser and superluminescence mode

Open Access
J. Fuchsberger, A. Windischhofer, F. Pilat, J. Nauschütz, R. Weih, R. Szedlak, B. Schwarz
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 261103 (2025)
https://doi.org/10.1063/5.0264339
Published: July 2025
View articletitled, Interband cascade devices with switchable laser and superluminescence mode
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Journal Articles

Enhanced electromagnetic wave absorption of Y2Fe16Si by atomic layer deposition coating

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Tianyu Xin, Kewei Li, Shaohua Fan, Yuankang Wang, Pengyu Zhang, Zhou Liu, Qing Xu, Zhaochu Luo, Honglin Du, Wenyun Yang, Changsheng Wang, Jinbo Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 262404 (2025)
https://doi.org/10.1063/5.0271637
Published: July 2025
View articletitled, Enhanced electromagnetic wave absorption of Y2Fe16Si by atomic layer deposition coating
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Journal Articles

Substrate-induced interfacial interactions in MOCVD-grown monolayer MoSe2

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Chao Zhang, Tianyu Hou, Tao Sang, Lintao Li, Wei Lyu, Yunrui Song, Zhujuan Li, Renwei Jing, Qiang Zhang, Yi Zhang, Chengbing Qin, Yufeng Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 261902 (2025)
https://doi.org/10.1063/5.0268975
Published: July 2025
View articletitled, Substrate-induced interfacial interactions in MOCVD-grown monolayer MoSe2
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Journal Articles

Van der Waals epitaxy of GeSn quantum dots on MoS2 enabled by oxygen-plasma pretreatment

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Xiaowei Shentu, Rui Wang, Weinan Zheng, Chengyuan Yang, Haokun Ding, Songsong Wu, Jinhui Qian, Guangyang Lin, Songyan Chen, Wei Huang, Cheng Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 262105 (2025)
https://doi.org/10.1063/5.0269760
Published: July 2025
View articletitled, Van der Waals epitaxy of GeSn quantum dots on MoS2 enabled by oxygen-plasma pretreatment
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Journal Articles

Giant super-Nernstian potentiometric response of InN quantum dots on self-formed core–shell InGaN nanowires

Open Access
Guanzhao Yang, Rongli Deng, Xuan Pu, Haibin Lin, Junyong Li, Richard Nötzel
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 262101 (2025)
https://doi.org/10.1063/5.0256741
Published: June 2025
View articletitled, Giant super-Nernstian potentiometric response of InN quantum dots on self-formed core–shell InGaN nanowires
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Journal Articles

Upper coherent interlayers using Cl-SnO2 for improved charge dynamics and efficient inverted perovskite photovoltaics

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Xiangyang Liu, Xinsheng Liu, Haoqi Guan, Junhao Liang, Chuting Huang, Xingyang Lin, Chuanyu Xu, Yujing Meng, Kexin Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 263501 (2025)
https://doi.org/10.1063/5.0268506
Published: June 2025
View articletitled, Upper coherent interlayers using Cl-SnO2 for improved charge dynamics and efficient inverted perovskite photovoltaics
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Journal Articles

Van der Waals epitaxy of (BA)2PbI4/WSe2 heterostructures with strong interlayer exciton emission

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Chang Lu, Mengya Li, Yuxuan He, Fengyi Zhang, Han Huang, Xiaoming Yuan
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 263101 (2025)
https://doi.org/10.1063/5.0274079
Published: June 2025
View articletitled, Van der Waals epitaxy of (BA)2PbI4/WSe2 heterostructures with strong interlayer exciton emission
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Journal Articles

UWBG ferroelectric ScAlN/AlGaN high-electron mobility transistor

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Jiangnan Liu, Md Tanvir Hasan, Shubham Mondal, Md Mehedi Hasan Tanim, Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Zetian Mi
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 253505 (2025)
https://doi.org/10.1063/5.0265601
Published: June 2025
View articletitled, UWBG ferroelectric ScAlN/AlGaN high-electron mobility transistor
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Journal Articles

Er-driven magnetic tunability in FePt thin films investigated via high-throughput experiments and microstructure analysis for future HAMR media

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Daisuke Ogawa, Yuma Iwasaki, Jun Uzuhashi, Yuta Sasaki, Masato Kotsugi, Yukiko K. Takahashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 252405 (2025)
https://doi.org/10.1063/5.0273511
Published: June 2025
View articletitled, Er-driven magnetic tunability in FePt thin films investigated via high-throughput experiments and microstructure analysis for future HAMR media
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Journal Articles

Sub-micron circuit fabrication on diamond anvils for mesoscopic high-pressure experiments

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Z. R. Rehfuss, K. Zheng, S. L. Gould, K. W. Murch, S. Ran
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 253501 (2025)
https://doi.org/10.1063/5.0253706
Published: June 2025
View articletitled, Sub-micron circuit fabrication on diamond anvils for mesoscopic high-pressure experiments
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Journal Articles

WS2 p-MOSFETs with channels deposited by plasma-enhanced atomic-layer deposition

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Ruixue Li, Rebecca A. Dawley, Shivanshu Mishra, Anil Adhikari, Ageeth A. Bol, Steven J. Koester
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 253102 (2025)
https://doi.org/10.1063/5.0267728
Published: June 2025
View articletitled, WS2 p-MOSFETs with channels deposited by plasma-enhanced atomic-layer deposition
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Journal Articles

Intrinsic spin transport in a topological insulator thin film

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Sharadh Jois, Gregory M. Stephen, Nicholas A. Blumenschein, Patrick J. Taylor, Aubrey T. Hanbicki, Adam L. Friedman
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 253101 (2025)
https://doi.org/10.1063/5.0261506
Published: June 2025
View articletitled, Intrinsic spin transport in a topological insulator thin film
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Journal Articles

Simultaneous measurement of charge carrier density, mobility, and their transients with four electrical contacts: Frequency-multiplexed Hall effect method

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Can C. Aygen, Christopher Cravey, Jiajun Luo, James Williams, D. Bruce Buchholz, David R. Daughton, Christian Reichl, Werner Wegscheider, Matthew A. Grayson
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 242109 (2025)
https://doi.org/10.1063/5.0272113
Published: June 2025
View articletitled, Simultaneous measurement of charge carrier density, mobility, and their transients with four electrical contacts: Frequency-multiplexed Hall effect method
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Journal Articles

High- κ HfO2/ZrO2 superlattice for BEOL-compatible GAAFET memory device

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Chen-You Wei, Kuei-Chun Liao, Yi-Ju Yao, Cheng-En Wu, Chien-Lung Chen, Chih-Chao Yang, Fu-Ju Hou, Guang-Li Luo, Yung-Hsien Wu, Yung-Chun Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 242902 (2025)
https://doi.org/10.1063/5.0274127
Published: June 2025
View articletitled, High- κ HfO2/ZrO2 superlattice for BEOL-compatible GAAFET memory device
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Journal Articles

Nanoscopic structural and emission properties of red InGaN hybrid single quantum wells

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Zhaozong Zhang, Ryota Ishii, Kanako Shojiki, Mitsuru Funato, Daisuke Iida, Kazuhiro Ohkawa, Yoichi Kawakami
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 242104 (2025)
https://doi.org/10.1063/5.0255145
Published: June 2025
View articletitled, Nanoscopic structural and emission properties of red InGaN hybrid single quantum wells
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Journal Articles

Thickness dependence of the electro-optic properties in epitaxial Hf0.5Zr0.5O2 thin films: Evident response down to 3 nm

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Afeefa Dastgir, Xueyou Yuan, Yufan Shen, Daisuke Kan, Yuichi Shimakawa, Hinata Sawaki, Shinya Kondo, Tomoaki Yamada
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 242901 (2025)
https://doi.org/10.1063/5.0267559
Published: June 2025
View articletitled, Thickness dependence of the electro-optic properties in epitaxial Hf0.5Zr0.5O2 thin films: Evident response down to 3 nm
Open the PDF for Thickness dependence of the electro-optic properties in epitaxial Hf0.5Zr0.5O2 thin films: Evident response down to 3 nm in another window