1-20 of 1102
Resistive switching
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Tunable luminous color of LEDs achieved through integrating reliable multilevel RRAM

Meng Qi, Liu Yang, Tao Sun, Runze Xu, Ziyu Lv, Ye Zhou, Su-Ting Han
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 143506 (2024)
https://doi.org/10.1063/5.0226980
Published: October 2024
View article titled, Tunable luminous color of LEDs achieved through integrating reliable multilevel RRAM
Open the PDF for Tunable luminous color of LEDs achieved through integrating reliable multilevel RRAM in another window
Journal Articles

Interface modeling analysis using density functional theory in highly reliable Pt/HfO2/TaOx/Ta self-rectifying memristor

Sheng-Guang Ren, Ge-Qi Mao, Yi-Bai Xue, Yu Zhang, Jia-Yi Sun, Wen-Bin Zuo, Yi Li, Kan-Hao Xue, Xiang-Shui Miao
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 123503 (2024)
https://doi.org/10.1063/5.0227603
Published: September 2024
View article titled, Interface modeling analysis using density functional theory in highly reliable Pt/HfO<sub>2</sub>/TaO<sub><em>x</em></sub>/Ta self-rectifying memristor
Open the PDF for Interface modeling analysis using density functional theory in highly reliable Pt/HfO<sub>2</sub>/TaO<sub><em>x</em></sub>/Ta self-rectifying memristor in another window
Journal Articles

Thermally driven resistive switching in a charge density wave compound

Malathi Nagaraja, Ullattuparambil Anagha, Saswat Subhankar, Rajeev N. Kini
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 102202 (2024)
https://doi.org/10.1063/5.0218725
Published: September 2024
View article titled, Thermally driven resistive switching in a charge density wave compound
Open the PDF for Thermally driven resistive switching in a charge density wave compound in another window
Journal Articles

Harnessing two-dimensional electron gas in oxide heterostructures for integrated neuromorphic architecture and logic operations on a single chip

Anshu Gupta, Amit Vashist, Suvankar Chakraverty
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 091601 (2024)
https://doi.org/10.1063/5.0219906
Published: August 2024
View article titled, Harnessing two-dimensional electron gas in oxide heterostructures for integrated neuromorphic architecture and logic operations on a single chip
Open the PDF for Harnessing two-dimensional electron gas in oxide heterostructures for integrated neuromorphic architecture and logic operations on a single chip in another window
Journal Articles

Organic heterojunction memristors with enhanced tunable resistive states for artificial synapses

Wen Li, Jia Zhou, Yechen Xu, Kui Tao, Haifeng Ling, Wei Shi, Wei Huang, Mingdong Yi
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 083510 (2024)
https://doi.org/10.1063/5.0221185
Published: August 2024
View article titled, Organic heterojunction memristors with enhanced tunable resistive states for artificial synapses
Open the PDF for Organic heterojunction memristors with enhanced tunable resistive states for artificial synapses in another window
Journal Articles

Nanogap resistive switch mechanism study and performance degradation analysis

Dacheng Yu, Zhongzheng Tian, Liming Ren, Yunyi Fu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 043503 (2024)
https://doi.org/10.1063/5.0216864
Published: July 2024
View article titled, Nanogap resistive switch mechanism study and performance degradation analysis
Open the PDF for Nanogap resistive switch mechanism study and performance degradation analysis in another window
Journal Articles

Voltage-insensitive stochastic magnetic tunnel junctions with double free layers

Rikuto Ota, Keito Kobayashi, Keisuke Hayakawa, Shun Kanai, Kerem Y. Çamsarı, Hideo Ohno, Shunsuke Fukami
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 022406 (2024)
https://doi.org/10.1063/5.0219606
Published: July 2024
View article titled, Voltage-insensitive stochastic magnetic tunnel junctions with double free layers
Open the PDF for Voltage-insensitive stochastic magnetic tunnel junctions with double free layers in another window
Journal Articles

Structurally simplified GCMO crossbar design for artificial synaptic networks

Anni Antola, Ilari Angervo, Hannu Huhtinen, Mikko Miettinen, Alejandro Schulman, Petriina Paturi
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 253502 (2024)
https://doi.org/10.1063/5.0210544
Published: June 2024
View article titled, Structurally simplified GCMO crossbar design for artificial synaptic networks
Open the PDF for Structurally simplified GCMO crossbar design for artificial synaptic networks in another window
Journal Articles

Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application

Divya Kaushik, Harshit Sharma, Nitish Saini, C. K. Suman, Ritu Srivastava
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233506 (2024)
https://doi.org/10.1063/5.0208254
Published: June 2024
View article titled, Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application
Open the PDF for Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application in another window
Journal Articles

Bipolar and complementary resistive switching induced by barrier regulation based on compliance current

Xuan Qiu, Haixia Gao, Shilong Zhu, Yifan Bai, Yang Zhao, Rui Wang, Xiaohua Ma, Yintang Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233509 (2024)
https://doi.org/10.1063/5.0208867
Published: June 2024
View article titled, Bipolar and complementary resistive switching induced by barrier regulation based on compliance current
Open the PDF for Bipolar and complementary resistive switching induced by barrier regulation based on compliance current in another window
Journal Articles

A tantalum oxide based memristive neuron device for anomaly detection application

Featured
Zuheng Wu, Yang Hu, Zhe Feng, Jianxun Zou, Wenbin Guo, Jian Lu, Tuo Shi, Su Tan, Zeqing Wang, Ruihan Yu, Yunlai Zhu, Zuyu Xu, Yuehua Dai
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233505 (2024)
https://doi.org/10.1063/5.0212850
Published: June 2024
View article titled, A tantalum oxide based memristive neuron device for anomaly detection application
Open the PDF for A tantalum oxide based memristive neuron device for anomaly detection application in another window
Journal Articles

In situ constructed ferroelectric-nanonet-supported heterostructure thin film for high-performance photovoltaics

Editor’s Pick
Shujie Sun, Dongxiao Yang, Junya Shen, Rui Chen, Haoliang Huang, Ruixia Ti, Xiaofeng Yin
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 202902 (2024)
https://doi.org/10.1063/5.0209498
Published: May 2024
View article titled, <em>In situ</em> constructed ferroelectric-nanonet-supported heterostructure thin film for high-performance photovoltaics
Open the PDF for <em>In situ</em> constructed ferroelectric-nanonet-supported heterostructure thin film for high-performance photovoltaics in another window
Includes: Supplementary data
Journal Articles

Wide-range thermal conductivity modulation based on protonated nickelate perovskite oxides

Hao-Bo Li, Zhiping Bian, Mitsuki Yoshimura, Kohei Shimoyama, Chengchao Zhong, Keiji Shimoda, Azusa N. Hattori, Kunihiko Yamauchi, Ikutaro Hamada, Hiromichi Ohta, Hidekazu Tanaka
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 191901 (2024)
https://doi.org/10.1063/5.0201268
Published: May 2024
View article titled, Wide-range thermal conductivity modulation based on protonated nickelate perovskite oxides
Open the PDF for Wide-range thermal conductivity modulation based on protonated nickelate perovskite oxides in another window
Includes: Supplementary data
Journal Articles

Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs2Pb(SCN)2Br2 perovskite films

Jia Xu, Yu Zhang, Ying Ding, Yuhua Gong, Jianxi Yao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173505 (2024)
https://doi.org/10.1063/5.0196160
Published: April 2024
View article titled, Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs<sub>2</sub>Pb(SCN)<sub>2</sub>Br<sub>2</sub> perovskite films
Open the PDF for Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs<sub>2</sub>Pb(SCN)<sub>2</sub>Br<sub>2</sub> perovskite films in another window
Includes: Supplementary data
Journal Articles

Synthesis and resistive switching performance of lead-free double perovskite Cs2AgBiBr6 films

Fanju Zeng, Yongqian Tan, Wei Hu, Xiaosheng Tang, Haifeng Yin, Tao Jing, Lianshuai Huang, Yi Yang, Juan Liao, Changmin Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 162101 (2024)
https://doi.org/10.1063/5.0199584
Published: April 2024
View article titled, Synthesis and resistive switching performance of lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> films
Open the PDF for Synthesis and resistive switching performance of lead-free double perovskite Cs<sub>2</sub>AgBiBr<sub>6</sub> films in another window
Includes: Supplementary data
Journal Articles

Cu/MgO-based resistive random access memory for neuromorphic applications

Gao Hu, Zhendi Yu, Hao Qu, Youhong Yuan, Dengfeng Li, Mingmin Zhu, Jinming Guo, Chen Xia, Xunying Wang, Baoyuan Wang, Guokun Ma, Hao Wang, Wenjing Dong
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 142109 (2024)
https://doi.org/10.1063/5.0189599
Published: April 2024
View article titled, Cu/MgO-based resistive random access memory for neuromorphic applications
Open the PDF for Cu/MgO-based resistive random access memory for neuromorphic applications in another window
Journal Articles

Flexible artificial synapses with robust bending stability based on all inorganic lead-free bismuth perovskite

Feifei Luo, Xinci Chen, Qiaoyu Guo, Qiao Wang, Yanzhao Wu, Xuechen Jiao, Xianmin Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 142106 (2024)
https://doi.org/10.1063/5.0191981
Published: April 2024
View article titled, Flexible artificial synapses with robust bending stability based on all inorganic lead-free bismuth perovskite
Open the PDF for Flexible artificial synapses with robust bending stability based on all inorganic lead-free bismuth perovskite in another window
Includes: Supplementary data
Journal Articles

Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction

Saransh Shrivastava, Hsiao-Ni Chi, Stephen Ekaputra Limantoro, Hans Juliano, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 133503 (2024)
https://doi.org/10.1063/5.0199385
Published: March 2024
View article titled, Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction
Open the PDF for Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction in another window
Includes: Supplementary data
Journal Articles

Non-zero crossing current–voltage characteristics of interface-type resistive switching devices

Sahitya Yarragolla, Torben Hemke, Jan Trieschmann, Thomas Mussenbrock
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 123504 (2024)
https://doi.org/10.1063/5.0202230
Published: March 2024
View article titled, Non-zero crossing current–voltage characteristics of interface-type resistive switching devices
Open the PDF for Non-zero crossing current–voltage characteristics of interface-type resistive switching devices in another window
Includes: Supplementary data
Journal Articles

The degradation mechanism and stability enhancement of GaSe lateral memristors

Featured
Junhao Tang, Runze Zhan, Enzi Chen, Qing Zhu, Weijian Li, Dawei Li, Zhenye Lu, Xi Wan, Kun Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 123102 (2024)
https://doi.org/10.1063/5.0190848
Published: March 2024
View article titled, The degradation mechanism and stability enhancement of GaSe lateral memristors
Open the PDF for The degradation mechanism and stability enhancement of GaSe lateral memristors in another window
Includes: Supplementary data