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Journal Articles

A liquid electrolyte-based memristor with application in associate learning

Gang Dou, Jiandong Liu, Wenhai Guo, Lixin Liu, Douyin Zhang, Mei Guo

Appl. Phys. Lett. 123, 124102 (2023)

https://doi.org/10.1063/5.0157543

Published: September 2023

View article titled, A liquid electrolyte-based memristor with application in associate learning

Journal Articles

Resistive switching localization by selective focused ion beam irradiation

Nareg Ghazikhanian, Javier del Valle, Pavel Salev, Ralph El Hage, Yoav Kalcheim, Coline Adda, Ivan K. Schuller

Appl. Phys. Lett. 123, 123505 (2023)

https://doi.org/10.1063/5.0151823

Published: September 2023

View article titled, Resistive switching localization by selective focused ion beam irradiation

Includes: Supplementary data

Journal Articles

Highly uniform resistive switching characteristics of KGM resistive memory through air plasma technology

Hao-Jung Liu, Yu-Chi Chang

Appl. Phys. Lett. 123, 101604 (2023)

https://doi.org/10.1063/5.0154759

Published: September 2023

View article titled, Highly uniform resistive switching characteristics of KGM resistive memory through air plasma technology

Journal Articles

Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y₂O₃ film‐based memristors

Yuanyuan Zhu, Zicong Guo, Mengyao Chen, Pan Zhang, Peng Shao, Daobin Luo, Youqing Wang, Yong Liu, Rui Xiong, Hongjun Wang

Appl. Phys. Lett. 123, 083503 (2023)

https://doi.org/10.1063/5.0157680

Published: August 2023

View article titled, Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y2O3 film‐based memristors

Includes: Supplementary data

Journal Articles

Resistive switching conducting filament electroformation with an electrothermal phase field method

John F. Sevic, Nobuhiko P. Kobayashi

Appl. Phys. Lett. 123, 083505 (2023)

https://doi.org/10.1063/5.0151532

Published: August 2023

View article titled, Resistive switching conducting filament electroformation with an electrothermal phase field method

Journal Articles

Phase transition induced threshold resistive switching in two-dimensional VTe₂ nanosheets for Boolean logic operations

Lun Zhong, Mengdie Li, Shuangjing Yan, Wenjing Jie

Appl. Phys. Lett. 123, 073504 (2023)

https://doi.org/10.1063/5.0165824

Published: August 2023

View article titled, Phase transition induced threshold resistive switching in two-dimensional VTe2 nanosheets for Boolean logic operations

Includes: Supplementary data

Journal Articles

Lead-free CsCu₂Br₃ perovskite for multilevel resistive switching memory

Jingyang Hu, Long Gao, Wentong Li, Meng Wang, Tuo Cheng, Zhe Li, Xiaoyu Zhang, Yinghui Wang, Jiaqi Zhang

Appl. Phys. Lett. 123, 063301 (2023)

https://doi.org/10.1063/5.0149389

Published: August 2023

View article titled, Lead-free CsCu2Br3 perovskite for multilevel resistive switching memory

Includes: Supplementary data

Journal Articles

Multiple resistance states induced by electric pulses and reset by joule heating in the hysteresis temperature range of (V_0.99Cr_0.01)₂O₃

Yongchang Ma, Guoqiang Xiao, Li Du, Ang Li, Dong Wu

Appl. Phys. Lett. 123, 051901 (2023)

https://doi.org/10.1063/5.0155698

Published: July 2023

View article titled, Multiple resistance states induced by electric pulses and reset by joule heating in the hysteresis temperature range of (V0.99Cr0.01)2O3

Includes: Supplementary data

Journal Articles

Deep reservoir computing based on self-rectifying memristor synapse for time series prediction

Rui Wang, Qi Liang, Saisai Wang, Yaxiong Cao, Xiaohua Ma, Hong Wang, Yue Hao

Appl. Phys. Lett. 123, 042109 (2023)

https://doi.org/10.1063/5.0158076

Published: July 2023

View article titled, Deep reservoir computing based on self-rectifying memristor synapse for time series prediction

Journal Articles

Enhanced temporal variation of resistive switching memories by insertion of rough titanium oxide thin film

Young-Woong Song, Jeong Hyun Yoon, Sein Lee, Wooho Ham, Jeong-Min Park, Junseo Lee, Jang-Yeon Kwon

Appl. Phys. Lett. 123, 041604 (2023)

https://doi.org/10.1063/5.0158280

Published: July 2023

View article titled, Enhanced temporal variation of resistive switching memories by insertion of rough titanium oxide thin film

Includes: Supplementary data

Journal Articles

High-performance Ta₂O₅-based resistive random-access memory with embedded graphene quantum dots and Pt–Ag composite active layer

Renzhi Wang, Ke Chang, Xinhui Zhao, Xinna Yu, Saiqun Ma, Zhuyikang Zhao, Hui Wang

Appl. Phys. Lett. 123, 043502 (2023)

https://doi.org/10.1063/5.0156972

Published: July 2023

View article titled, High-performance Ta2O5-based resistive random-access memory with embedded graphene quantum dots and Pt–Ag composite active layer

Includes: Supplementary data

Journal Articles

Modeling the conduction mechanisms of intrinsic multi-level states in HfO_x-based resistive random access memory

Shenghua Cheng, Xiaohu Wang, Hao Zhang, Yongbo Liu, Tingying Shen, Xinyi Li, Bin Gao, He Qian

Appl. Phys. Lett. 123, 043501 (2023)

https://doi.org/10.1063/5.0160109

Published: July 2023

View article titled, Modeling the conduction mechanisms of intrinsic multi-level states in HfOx-based resistive random access memory

Journal Articles

Effect of the bottom electrode on the digital and analog resistive switching behavior of SiN_x-based RRAM

Mengyi Qian, Haixia Gao, Yiwei Duan, Jingshu Guo, Yifan Bai, Shilong Zhu, Xiaohua Ma, Yintang Yang

Appl. Phys. Lett. 123, 033501 (2023)

https://doi.org/10.1063/5.0155262

Published: July 2023

View article titled, Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM

Includes: Supplementary data

Journal Articles

Ferroelectric-controlled all MXene nonvolatile flexible memory devices for data storage application

Sabeen Fatima, Rabia Tahir, Syed Rizwan

Appl. Phys. Lett. 123, 013503 (2023)

https://doi.org/10.1063/5.0141575

Published: July 2023

View article titled, Ferroelectric-controlled all MXene nonvolatile flexible memory devices for data storage application

Journal Articles

Epitaxial growth of EuNiO₃ on SrTiO₃ and its application to stacked protonation resistance switching devices

Yuki Taniguchi, Hao-Bo Li, Kohei Shimoyama, Azusa N. Hattori, Hidekazu Tanaka

Appl. Phys. Lett. 122, 263502 (2023)

https://doi.org/10.1063/5.0152640

Published: June 2023

View article titled, Epitaxial growth of EuNiO3 on SrTiO3 and its application to stacked protonation resistance switching devices

Includes: Supplementary data

Journal Articles

The influence of thermal cycling on the activation energy of conduction electrons and filament temperature in Pt/NiO_x/Pt ReRAMs

H. S. Alagoz, M. Egilmez, J. Jung, K. H. Chow

Appl. Phys. Lett. 122, 253501 (2023)

https://doi.org/10.1063/5.0151967

Published: June 2023

View article titled, The influence of thermal cycling on the activation energy of conduction electrons and filament temperature in Pt/NiOx/Pt ReRAMs

Journal Articles

Electrode area dependent switching behavior of Ge₂Sb₂Se₄Te₁ phase change material driven by narrow voltage pulse

Wei Yuan, Yilei Lu, Liangjun Lu, Rui Wang, Yuyan Weng, Lu You, Liang Fang, Linjie Zhou, Fengang Zheng

Appl. Phys. Lett. 122, 244102 (2023)

https://doi.org/10.1063/5.0149514

Published: June 2023

View article titled, Electrode area dependent switching behavior of Ge2Sb2Se4Te1 phase change material driven by narrow voltage pulse

Includes: Supplementary data

Journal Articles

Control of resistive switching type in BaTiO₃ thin films grown by high and low laser fluence

Ang Li, Qinxuan Li, Caihong Jia, Weifeng Zhang

Appl. Phys. Lett. 122, 232104 (2023)

https://doi.org/10.1063/5.0142736

Published: June 2023

View article titled, Control of resistive switching type in BaTiO3 thin films grown by high and low laser fluence

Journal Articles

Memory properties and short-range order in silicon oxynitride-based memristors

Yu. N. Novikov, G. N. Kamaev, I. P. Prosvirin, V. A. Gritsenko

Appl. Phys. Lett. 122, 232903 (2023)

https://doi.org/10.1063/5.0151211

Published: June 2023

View article titled, Memory properties and short-range order in silicon oxynitride-based memristors

Includes: Supplementary data

Journal Articles

Influence of surface adsorption on MoS₂ memtransistor switching kinetics

John M. Cain, Xiaodong Yan, Stephanie E. Liu, Justin H. Qian, Thomas T. Zeng, Vinod K. Sangwan, Mark C. Hersam, Stanley S. Chou, Tzu-Ming Lu

Appl. Phys. Lett. 122, 223502 (2023)

https://doi.org/10.1063/5.0147241

Published: May 2023

View article titled, Influence of surface adsorption on MoS2 memtransistor switching kinetics

Includes: Supplementary data

NARROW

Topics

A liquid electrolyte-based memristor with application in associate learning

Resistive switching localization by selective focused ion beam irradiation

Highly uniform resistive switching characteristics of KGM resistive memory through air plasma technology

Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y₂O₃ film‐based memristors

Resistive switching conducting filament electroformation with an electrothermal phase field method

Phase transition induced threshold resistive switching in two-dimensional VTe₂ nanosheets for Boolean logic operations

Lead-free CsCu₂Br₃ perovskite for multilevel resistive switching memory

Multiple resistance states induced by electric pulses and reset by joule heating in the hysteresis temperature range of (V_0.99Cr_0.01)₂O₃

Deep reservoir computing based on self-rectifying memristor synapse for time series prediction

Enhanced temporal variation of resistive switching memories by insertion of rough titanium oxide thin film

High-performance Ta₂O₅-based resistive random-access memory with embedded graphene quantum dots and Pt–Ag composite active layer

Modeling the conduction mechanisms of intrinsic multi-level states in HfO_x-based resistive random access memory

Effect of the bottom electrode on the digital and analog resistive switching behavior of SiN_x-based RRAM

Ferroelectric-controlled all MXene nonvolatile flexible memory devices for data storage application

Epitaxial growth of EuNiO₃ on SrTiO₃ and its application to stacked protonation resistance switching devices

The influence of thermal cycling on the activation energy of conduction electrons and filament temperature in Pt/NiO_x/Pt ReRAMs

Electrode area dependent switching behavior of Ge₂Sb₂Se₄Te₁ phase change material driven by narrow voltage pulse

Control of resistive switching type in BaTiO₃ thin films grown by high and low laser fluence

Memory properties and short-range order in silicon oxynitride-based memristors

Influence of surface adsorption on MoS₂ memtransistor switching kinetics

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