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Journal Articles

Trap-induced electrical degradation in edge-termination-hardened NiO/β-Ga2O3 heterojunction under 10 MeV fluence-dependent proton irradiations

Z. L. Zhang, N. Sun, T. Q. Wang, F. Zhou, C. M. Liu, C. H. Qi, G. L. Ma, Y. Q. Zhang, H. Y. Li, Z. F. Lei, J. D. Ye, H. Lu, M. X. Huo, L. Y. Xiao
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 142106 (2024)
https://doi.org/10.1063/5.0230979
Published: October 2024
View article titled, Trap-induced electrical degradation in edge-termination-hardened NiO/<em>β</em>-Ga<sub>2</sub>O<sub>3</sub> heterojunction under 10 MeV fluence-dependent proton irradiations
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Journal Articles

Single-event burnout in β-Ga2O3 Schottky barrier diode induced by high-energy proton

Xing Li, Weibo Jiang, Yuangang Wang, Hong Zhang, Chao Peng, Xiaoning Zhang, Xi Liang, Weili Fu, Zhangang Zhang, Zhifeng Lei, Teng Ma, Jia-Yue Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 092101 (2024)
https://doi.org/10.1063/5.0226529
Published: August 2024
View article titled, Single-event burnout in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode induced by high-energy proton
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Journal Articles

Freezing non-radiative recombination in high-performance CsPbBr3 single crystal x-ray detector

Xiao Zhao, Shimao Wang, Yanan Song, Toru Aoki, Volodymyr Gnatyuk, Libing You, Zanhong Deng, Ruhua Tao, Xiaodong Fang, Gang Meng
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 083507 (2024)
https://doi.org/10.1063/5.0224223
Published: August 2024
View article titled, Freezing non-radiative recombination in high-performance CsPbBr<sub>3</sub> single crystal x-ray detector
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Journal Articles

Barrier height enhancement in β -Ga2O3 Schottky diodes using an oxygen-rich ultra-thin AlOx interfacial layer

Prabhat Prajapati, Saurabh Lodha
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 061602 (2024)
https://doi.org/10.1063/5.0214589
Published: August 2024
View article titled, Barrier height enhancement in β -Ga<sub>2</sub>O<sub>3</sub> Schottky diodes using an oxygen-rich ultra-thin AlO<sub>x</sub> interfacial layer
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Journal Articles

Multi-channel GaN varactors and their current conduction mechanisms

Wensong Zou, Jiawei Chen, Xiaoxiang Hou, Peng Xiang, Kai Cheng, Qingfeng Zhang, Jun Ma
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 032105 (2024)
https://doi.org/10.1063/5.0217767
Published: July 2024
View article titled, Multi-channel GaN varactors and their current conduction mechanisms
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Journal Articles

Thermal-induced bandgap broadening phenomenon in copolymer organic semiconductors

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Hengdian Chang, Jun Zhang, Xin Wu, Haonan Lin, Yabin Mou, Zhiyao Wu, Jia Zhou, Haowen Qian, Jiafei Yao, Kemeng Yang, Jing Chen, Man Li, Wen Li, Mingdong Yi, Song Bai, Yufeng Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 252101 (2024)
https://doi.org/10.1063/5.0207752
Published: June 2024
View article titled, Thermal-induced bandgap broadening phenomenon in copolymer organic semiconductors
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Journal Articles

High-performance near-infrared vertical organic phototransistors through bulk heterojunction integration

Longfeng Zhao, Haihong Xie, Jiangnan Xia, Yuanyuan Hu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 243301 (2024)
https://doi.org/10.1063/5.0210727
Published: June 2024
View article titled, High-performance near-infrared vertical organic phototransistors through bulk heterojunction integration
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Journal Articles

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Bejoy Sikder, Toiyob Hossain, Qingyun Xie, John Niroula, Nitul S. Rajput, Koon Hoo Teo, Hiroshi Amano, Tomás Palacios, Nadim Chowdhury
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 243501 (2024)
https://doi.org/10.1063/5.0203344
Published: June 2024
View article titled, Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure
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Journal Articles

Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact

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Hehe Gong, Na Sun, Tiancheng Hu, Xinxin Yu, Matthew Porter, Zineng Yang, Fangfang Ren, Shulin Gu, Youdou Zheng, Rong Zhang, Yuhao Zhang, Jiandong Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233507 (2024)
https://doi.org/10.1063/5.0211124
Published: June 2024
View article titled, Ga<sub>2</sub>O<sub>3</sub>/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact
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Journal Articles

Bipolar and complementary resistive switching induced by barrier regulation based on compliance current

Xuan Qiu, Haixia Gao, Shilong Zhu, Yifan Bai, Yang Zhao, Rui Wang, Xiaohua Ma, Yintang Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233509 (2024)
https://doi.org/10.1063/5.0208867
Published: June 2024
View article titled, Bipolar and complementary resistive switching induced by barrier regulation based on compliance current
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Journal Articles

Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor

D. Lidsky, C. R. Allemang, T. Hutchins-Delgado, A. R. James, P. Allen, M. Saleh Ziabari, P. Sharma, A. M. Bradicich, W. C.-H. Kuo, S. D. House, T. M. Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233503 (2024)
https://doi.org/10.1063/5.0199583
Published: June 2024
View article titled, Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor
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Journal Articles

Enhanced self-powered metal–semiconductor–metal WSe2 photodetectors with asymmetric Schottky contacts through tailored electrode thickness and positioning

Xianjun Zhang, Dan Qiu, Pengfei Hou
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 222105 (2024)
https://doi.org/10.1063/5.0212957
Published: May 2024
View article titled, Enhanced self-powered metal–semiconductor–metal WSe<sub>2</sub> photodetectors with asymmetric Schottky contacts through tailored electrode thickness and positioning
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Journal Articles

In situ constructed ferroelectric-nanonet-supported heterostructure thin film for high-performance photovoltaics

Editor’s Pick
Shujie Sun, Dongxiao Yang, Junya Shen, Rui Chen, Haoliang Huang, Ruixia Ti, Xiaofeng Yin
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 202902 (2024)
https://doi.org/10.1063/5.0209498
Published: May 2024
View article titled, <em>In situ</em> constructed ferroelectric-nanonet-supported heterostructure thin film for high-performance photovoltaics
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Includes: Supplementary data
Journal Articles

Toward low-power-consumption source-gated phototransistor

Mingxu Wang, Fengjing Liu, Tieying Zhang, Guangcan Wang, Zixu Sa, Zeqi Zang, Dongqing Qi, Kepeng Song, Peng Cui, Zai-xing Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 203504 (2024)
https://doi.org/10.1063/5.0204244
Published: May 2024
View article titled, Toward low-power-consumption source-gated phototransistor
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Journal Articles

Exploring the influence of the contact resistance on perovskite phototransistors

Lijian Chen, Quanhua Chen, Hong Zhu, Runfeng Wang, Yiping Wu, Run Li, Li Zhu, Guangan Yang, Xiang Wan, Xing Zhao, Zhihao Yu, Binhong Li, Chee Leong Tan, Huabin Sun, Yong Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 162202 (2024)
https://doi.org/10.1063/5.0190100
Published: April 2024
View article titled, Exploring the influence of the contact resistance on perovskite phototransistors
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Includes: Supplementary data
Journal Articles

Boosting the photosensitivity of organic phototransistors with photomultiplication via Corbino configurations

Dongho Choi, Sanghoon Park, Hanul Moon, Seunghyup Yoo
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 142102 (2024)
https://doi.org/10.1063/5.0185330
Published: April 2024
View article titled, Boosting the photosensitivity of organic phototransistors with photomultiplication via Corbino configurations
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Journal Articles

Non-zero crossing current–voltage characteristics of interface-type resistive switching devices

Sahitya Yarragolla, Torben Hemke, Jan Trieschmann, Thomas Mussenbrock
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 123504 (2024)
https://doi.org/10.1063/5.0202230
Published: March 2024
View article titled, Non-zero crossing current–voltage characteristics of interface-type resistive switching devices
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Includes: Supplementary data
Journal Articles

Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

Editor’s Pick
Fabrizio Roccaforte, Marilena Vivona, Salvatore Ethan Panasci, Giuseppe Greco, Patrick Fiorenza, Attila Sulyok, Antal Koos, Bela Pecz, Filippo Giannazzo
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 102102 (2024)
https://doi.org/10.1063/5.0192691
Published: March 2024
View article titled, Schottky contacts on sulfurized silicon carbide (4H-SiC) surface
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Journal Articles

Switchable diode effect in 2D van der Waals ferroelectric CuCrP2S6

Ping Liu, Yongde Li, De Hou, Hanpeng Zhu, Hecheng Luo, Shuang Zhou, Lujun Wei, Wei Niu, Zhigao Sheng, Weiwei Mao, Yong Pu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 091901 (2024)
https://doi.org/10.1063/5.0191188
Published: February 2024
View article titled, Switchable diode effect in 2D van der Waals ferroelectric CuCrP<sub>2</sub>S<sub>6</sub>
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Includes: Supplementary data
Journal Articles

Natural formation of linear defect structures in MoS2

Pavel V. Lukashev, Timothy E. Kidd, Haley A. Harms, Colin Gorgen, Andrew J. Stollenwerk
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 083103 (2024)
https://doi.org/10.1063/5.0191536
Published: February 2024
View article titled, Natural formation of linear defect structures in MoS<sub>2</sub>
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Includes: Supplementary data