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Journal Articles

Layered semimetal electrodes for future heterogeneous electronics

Bubunu Biswal, Ramesh Rajarapu, Saroj Poudyal, Renu Yadav, Prahalad Kanti Barman, Manasi Mandal, Ravi Prakash Singh, B. R. K. Nanda, Abhishek Misra
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 113102 (2023)
https://doi.org/10.1063/5.0164063
Published: September 2023
View article titled, Layered semimetal electrodes for future heterogeneous electronics
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Includes: Supplementary data
Journal Articles

Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts

Yuzhi Li, Yue Zhou, Shenghan Zou, Linfeng Lan, Zheng Gong
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 103503 (2023)
https://doi.org/10.1063/5.0159184
Published: September 2023
View article titled, Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts
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Includes: Supplementary data
Journal Articles

High responsivity p-GaSe/n-Si van der Waals heterojunction phototransistor with a Schottky barrier collector for ultraviolet to near-infrared band detection

Yifan Gao, Xinwei Cai, Shuo Li, Qiang Wu, Guangyang Lin, Cheng Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 081102 (2023)
https://doi.org/10.1063/5.0155877
Published: August 2023
View article titled, High responsivity p-GaSe/n-Si van der Waals heterojunction phototransistor with a Schottky barrier collector for ultraviolet to near-infrared band detection
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Journal Articles

Deep reservoir computing based on self-rectifying memristor synapse for time series prediction

Rui Wang, Qi Liang, Saisai Wang, Yaxiong Cao, Xiaohua Ma, Hong Wang, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 042109 (2023)
https://doi.org/10.1063/5.0158076
Published: July 2023
View article titled, Deep reservoir computing based on self-rectifying memristor synapse for time series prediction
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Journal Articles

Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM

Mengyi Qian, Haixia Gao, Yiwei Duan, Jingshu Guo, Yifan Bai, Shilong Zhu, Xiaohua Ma, Yintang Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 033501 (2023)
https://doi.org/10.1063/5.0155262
Published: July 2023
View article titled, Effect of the bottom electrode on the digital and analog resistive switching behavior of SiN<sub>x</sub>-based RRAM
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Includes: Supplementary data
Journal Articles

Enhanced synaptic performances in SrIrO3 thin films by a ferroelectric layer

Xinxiu Wu, Zeyang Li, Xiao Yi, Caihong Jia, Weifeng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 012104 (2023)
https://doi.org/10.1063/5.0149837
Published: July 2023
View article titled, Enhanced synaptic performances in SrIrO<sub>3</sub> thin films by a ferroelectric layer
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Journal Articles

Low-frequency noise in hBN/MoS2/hBN transistor at cryogenic temperatures toward low-noise cryo-CMOS device applications

S. Nakaharai, T. Arakawa, A. Zulkefli, T. Iwasaki, K. Watanabe, T. Taniguchi, Y. Wakayama
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 262102 (2023)
https://doi.org/10.1063/5.0152475
Published: June 2023
View article titled, Low-frequency noise in hBN/MoS<sub>2</sub>/hBN transistor at cryogenic temperatures toward low-noise cryo-CMOS device applications
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Includes: Supplementary data
Journal Articles

Thickness modulation of incline-grown Bi2O2Se for the construction of high-performance phototransistors

Sidi Fan, Yuting Wu, Weisheng Li, Jun Gao, Weiyu Yang, Jiajun Deng, Rui Cao, Xiaolong Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 223503 (2023)
https://doi.org/10.1063/5.0149922
Published: June 2023
View article titled, Thickness modulation of incline-grown Bi<sub>2</sub>O<sub>2</sub>Se for the construction of high-performance phototransistors
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Includes: Supplementary data
Journal Articles

Investigation of carrier transport through perovskite crystal junctions with in-situ replaceable electrodes

Zhibin Zhao, Zemin Zhang, Jieyi Zhang, Mingwei Wang, Yuelong Li, Dong Xiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 201602 (2023)
https://doi.org/10.1063/5.0152400
Published: May 2023
View article titled, Investigation of carrier transport through perovskite crystal junctions with <em>in-situ</em> replaceable electrodes
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Includes: Supplementary data
Journal Articles

High breakdown electric field diamond Schottky barrier diode with HfO2 field plate

Qi Li, Shumiao Zhang, Guoqing Shao, Juan Wang, Ruozheng Wang, Qianwen Zhang, Genqiang Chen, Shi He, Shuwei Fan, Hong-Xing Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 202101 (2023)
https://doi.org/10.1063/5.0147090
Published: May 2023
View article titled, High breakdown electric field diamond Schottky barrier diode with HfO<sub>2</sub> field plate
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Journal Articles

Converging-guiding-track design enables 100% growth deployment rate of ultrathin monocrystalline silicon nanowire channels

Wentao Qian, Yifei Liang, Junzhuan Wang, Zongguang Liu, Jun Xu, Linwei Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 173101 (2023)
https://doi.org/10.1063/5.0142492
Published: April 2023
View article titled, Converging-guiding-track design enables 100% growth deployment rate of ultrathin monocrystalline silicon nanowire channels
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Journal Articles

MBE-grown Fe:Pd/ZnSe Schottky-barrier photodetector: Distinguishing blue + UV light levels among white light sources

Shek-Ying Lin, Zhihao He, Yick On To, Iam Keong Sou
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 061101 (2023)
https://doi.org/10.1063/5.0125800
Published: February 2023
View article titled, MBE-grown Fe:Pd/ZnSe Schottky-barrier photodetector: Distinguishing blue + UV light levels among white light sources
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Journal Articles

Enhanced photovoltaic effect in graphene–silicon Schottky junction under mechanical manipulation

Dong Pu, Muhammad Abid Anwar, Jiachao Zhou, Renwei Mao, Xin Pan, Jian Chai, Feng Tian, Hua Wang, Huan Hu, Yang Xu
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 041102 (2023)
https://doi.org/10.1063/5.0128962
Published: January 2023
View article titled, Enhanced photovoltaic effect in graphene–silicon Schottky junction under mechanical manipulation
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Journal Articles

2D MXene/ 1D GaN van der Waals heterojunction for self-powered UV photodetector

C. Thota, G. Murali, R. Dhanalakshmi, M. Reddeppa, N.-H. Bak, G. Nagaraju, S.-G. Kim, J. K. R. Modigunta, Y. H. Park, Insik In, M.-D. Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 031102 (2023)
https://doi.org/10.1063/5.0132756
Published: January 2023
View article titled, 2D MXene/ 1D GaN van der Waals heterojunction for self-powered UV photodetector
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Includes: Supplementary data
Journal Articles

UV–Vis–NIR broad spectral photodetectors facilely fabricated with nonmetal plasmonic WO3−x nanosheets

Dongran Wang, Kai Xia, Haibin Tang, Zhulin Huang, Yao Zhang, Xiujuan Wang, Guangtao Fei, Guowen Meng
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 253503 (2022)
https://doi.org/10.1063/5.0130645
Published: December 2022
View article titled, UV–Vis–NIR broad spectral photodetectors facilely fabricated with nonmetal plasmonic WO<sub>3−x</sub> nanosheets
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Includes: Supplementary data
Journal Articles

500 °C operation of β -Ga2O3 field-effect transistors

Ahmad E. Islam, Nicholas P. Sepelak, Kyle J. Liddy, Rachel Kahler, Daniel M. Dryden, Jeremiah Williams, Hanwool Lee, Katie Gann, Andreas Popp, Kevin D. Leedy, Nolan S. Hendricks, Jeff. L. Brown, Eric R. Heller, Weisong Wang, Wenjuan Zhu, Michael O. Thompson, Kelson D. Chabak, Andrew J. Green
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 243501 (2022)
https://doi.org/10.1063/5.0113744
Published: December 2022
View article titled, 500 °C operation of β -Ga<sub>2</sub>O<sub>3</sub> field-effect transistors
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Journal Articles

All-epitaxial Al/AlGaN/GaN low-barrier Schottky diodes

N. V. Vostokov, M. N. Drozdov, S. A. Kraev, D. N. Lobanov, A. V. Novikov, P. A. Yunin
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 233507 (2022)
https://doi.org/10.1063/5.0131031
Published: December 2022
View article titled, All-epitaxial Al/AlGaN/GaN low-barrier Schottky diodes
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Journal Articles

Schottky barrier contact on In0.53Ga0.47As with short-wave infrared transparent conductive oxide

Tatsuro Maeda, Kazuaki Oishi, Hiroto Ishii, Hiroyuki Ishii, Wen Hsin Chang, Tetsuji Shimizu, Akira Endoh, Hiroki Fujishiro, Takashi Koida
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 232102 (2022)
https://doi.org/10.1063/5.0129445
Published: December 2022
View article titled, Schottky barrier contact on In<sub>0.53</sub>Ga<sub>0.47</sub>As with short-wave infrared transparent conductive oxide
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Journal Articles

Reduced graphene oxide grafted on p-Si photocathode as a multifunctional interlayer for enhanced solar hydrogen production

Junxia Shen, Yongjie Wang, Cong Chen, Zhihe Wei, Pengfei Song, Shuai Zou, Wen Dong, Xiaodong Su, Yang Peng, Ronglei Fan, Mingrong Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 213901 (2022)
https://doi.org/10.1063/5.0121678
Published: November 2022
View article titled, Reduced graphene oxide grafted on p-Si photocathode as a multifunctional interlayer for enhanced solar hydrogen production
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Includes: Supplementary data
Journal Articles

Erratum: “Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects” [Appl. Phys. Lett. 121 , 162902 (2022)]

Kuan-Ting Ho, Daniel Monteiro Diniz Reis, Karla Hiller
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 209901 (2022)
https://doi.org/10.1063/5.0132795
Published: November 2022
View article titled, Erratum: “Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects” [Appl. Phys. Lett. 121 , 162902 (2022)]
Open the PDF for Erratum: “Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects” [Appl. Phys. Lett. 121 , 162902 (2022)] in another window