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Journal Articles
Enhancing radiation hardness of microelectronics through stress-relief milling
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 034101 (2025)
Published: January 2025
Journal Articles
Defect evolution and nitrogen incorporation in ion-implanted β-Ga2O3
Available to PurchaseAlexander Azarov, Augustinas Galeckas, Alexey Mikhaylov, Alena Nikolskaya, David Tetelbaum, Dmitry Korolev, Eduard Monakhov, Andrej Kuznetsov
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 192107 (2024)
Published: November 2024
Journal Articles
The mechanism of degradation and failure in NiO/ β -Ga2O3 heterojunction diodes induced by the high-energy ion irradiation
Available to PurchaseSong He, Junpeng Wen, Jinyang Liu, Weibing Hao, Xuanze Zhou, Tianqi Wang, Zhengliang Zhang, Jianli Liu, Guangwei Xu, Shu Yang, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 162101 (2024)
Published: October 2024
Journal Articles
A 90 SrHfO 3 -based betavoltaic/beta-photovoltaic dual-effect integrated nuclear battery
Qiming Cui, Jingbin Lu, Yu Zhang, Xinxu Yuan, Chengqian Li, Yang Zhao, Renzhou Zheng, Xiaoyi Li, Yuxin Liu, Xinrui Liu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 163902 (2024)
Published: October 2024
Journal Articles
Degradation of electrical properties of subcells in multi-junction solar cells under neutron irradiation
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 132105 (2024)
Published: September 2024
Journal Articles
Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V
Available to PurchaseXiaoyu Yan, Pengfei Zhai, Chen Yang, Shiwei Zhao, Shuai Nan, Peipei Hu, Teng Zhang, Qiyu Chen, Lijun Xu, Zongzhen Li, Jie Liu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 042103 (2024)
Published: July 2024
Journal Articles
Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs
Available to PurchaseXiaohu Wang, Xuefeng Zheng, Danmei Lin, Hao Zhang, Yanrong Cao, Ling Lv, Yingzhe Wang, Peipei Hu, Jie Liu, Xiaohua Ma, Yue Hao
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 173502 (2024)
Published: April 2024
Journal Articles
Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design
Available to PurchaseA. S. Senarath, S. Islam, A. Sengupta, M. W. McCurdy, T. Anderson, A. Jacobs, R. Kaplar, D. R. Ball, E. X. Zhang, S. T. Pantelides, R. A. Reed, M. A. Ebrish, D. M. Fleetwood, J. D. Caldwell, R. D. Schrimpf
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 132101 (2024)
Published: March 2024
Includes: Supplementary data
Journal Articles
Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation
Mahjabin Mahfuz, Farshid Reza, Xingyu Liu, Rongming Chu, Maik Lang, Michael Snure, Xing Wang, Miaomiao Jin
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 112104 (2024)
Published: March 2024
Includes: Supplementary data
Journal Articles
Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes
Available to PurchaseJinyang Liu, Zhao Han, Lei Ren, Xiao Yang, Guangwei Xu, Weibing Hao, Xiaolong Zhao, Shu Yang, Di Lu, Yuncheng Han, Xiaohu Hou, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 123, 112106 (2023)
Published: September 2023
Journal Articles
Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction
Available to PurchaseZhenyu Ma, Xin Zhang, Pu Liu, Yong Deng, Wenyu Hu, Longqing Chen, Jun Zhu, Sen Chen, Zhengshang Wang, Yuechun Shi, Jian Ma, Xiaoyi Wang, Yang Qiu, Kun Zhang, Xudong Cui, Thomas Walther
Journal:
Applied Physics Letters
Appl. Phys. Lett. 123, 102101 (2023)
Published: September 2023
Includes: Supplementary data
Journal Articles
High mobility of intrinsic defects in α -Ga2O3
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 122, 182104 (2023)
Published: May 2023
Journal Articles
A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation
Available to PurchaseTian Zhu, Xue-Feng Zheng, Tai-Xu Yin, Hao Zhang, Xiao-Hu Wang, Shao-Zhong Yue, Tan Wang, Tao Han, Xiao-Hua Ma, Yue Hao
Journal:
Applied Physics Letters
Appl. Phys. Lett. 122, 183502 (2023)
Published: May 2023
Journal Articles
Nonreciprocal critical current in an obliquely ion-irradiated YBa2Cu3O7 film
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 122, 172601 (2023)
Published: April 2023
Journal Articles
Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon
Available to PurchaseYingzhe Wang, Xuefeng Zheng, Tian Zhu, Shaozhong Yue, Ailing Pan, Shengrui Xu, Peixian Li, Xiaohua Ma, Jincheng Zhang, Lixin Guo, Yue Hao
Journal:
Applied Physics Letters
Appl. Phys. Lett. 122, 143501 (2023)
Published: April 2023
Journal Articles
Localized strain relaxation effect on gamma irradiated AlGaN/GaN high electron mobility transistors
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 121, 233502 (2022)
Published: December 2022
Journal Articles
Reliable Pb(Zr,Ti)O3-based thin film piezoelectric micromirrors for space-applications
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 121, 132901 (2022)
Published: September 2022
Includes: Supplementary data
Journal Articles
Journal Articles
Thermo-mechanical aspects of gamma irradiation effects on GaN HEMTs
Available to PurchaseMd Abu Jafar Rasel, Sergei P. Stepanoff, Maxwell Wetherington, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen Pearton
Journal:
Applied Physics Letters
Appl. Phys. Lett. 120, 124101 (2022)
Published: March 2022
Journal Articles
Journal:
Applied Physics Letters
Appl. Phys. Lett. 120, 012101 (2022)
Published: January 2022
Includes: Supplementary data
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