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Journal Articles

Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers

Moonkyong Na, Wook Bahng, Hyundon Jung, Chanhyoung Oh, Donghyun Jang, Soon-Ku Hong
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 152109 (2024)
https://doi.org/10.1063/5.0198216
Published: April 2024
View articletitled, Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers
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Includes: Supplementary data
Journal Articles

Realization of all-crystalline GaN/Er:GaN/GaN core-cladding optical fiber structures

T. B. Smith, Y. Q. Yan, W. P. Zhao, J. Li, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 192110 (2022)
https://doi.org/10.1063/5.0121910
Published: November 2022
View articletitled, Realization of all-crystalline GaN/Er:GaN/GaN core-cladding optical fiber structures
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Journal Articles

Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers

Philip Chan, Steven P. DenBaars, Shuji Nakamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 131106 (2021)
https://doi.org/10.1063/5.0064755
Published: September 2021
View articletitled, Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers
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Journal Articles

Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy

L. Y. Li, K. Shima, M. Yamanaka, K. Kojima, T. Egawa, A. Uedono, S. Ishibashi, T. Takeuchi, M. Miyoshi, S. F. Chichibu
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 091105 (2021)
https://doi.org/10.1063/5.0066263
Published: August 2021
View articletitled, Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy
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Journal Articles

Advanced hydrogenation process applied on Ge on Si quantum dots for enhanced light emission

Lukas Spindlberger, Moonyong Kim, Johannes Aberl, Thomas Fromherz, Friedrich Schäffler, Frank Fournel, Jean-Michel Hartmann, Brett Hallam, Moritz Brehm
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 083104 (2021)
https://doi.org/10.1063/5.0036039
Published: February 2021
View articletitled, Advanced hydrogenation process applied on Ge on Si quantum dots for enhanced light emission
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Includes: Supplementary data
Journal Articles

Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates

R. H. El-Jaroudi, K. M. McNicholas, A. F. Briggs, S. D. Sifferman, L. Nordin, S. R. Bank
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 021102 (2020)
https://doi.org/10.1063/5.0011147
Published: July 2020
View articletitled, Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates
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Journal Articles

Room-temperature ferromagnetism in p-type ZnO:N films prepared by oxidizing Zn3N2 in oxygen plasma

Yuping Jin, Nuannuan Zhang, Huizhong Xu, Bin Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 202401 (2018)
https://doi.org/10.1063/1.5042283
Published: November 2018
View articletitled, Room-temperature ferromagnetism in p-type ZnO:N films prepared by oxidizing Zn3N2 in oxygen plasma
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Includes: Supplementary data
Journal Articles

Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ¯ ) p-type GaN fabricated by sequential ion-implantation of Mg and H

K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, S. F. Chichibu
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 191901 (2018)
https://doi.org/10.1063/1.5050967
Published: November 2018
View articletitled, Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ¯ ) p-type GaN fabricated by sequential ion-implantation of Mg and H
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Journal Articles

Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching

Xiongliang Wei, Syed Ahmed Al Muyeed, Matthew R. Peart, Wei Sun, Nelson Tansu, Jonathan J. Wierer, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 121106 (2018)
https://doi.org/10.1063/1.5046857
Published: September 2018
View articletitled, Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching
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Journal Articles

Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission

S. Assali, J. Nicolas, S. Mukherjee, A. Dijkstra, O. Moutanabbir
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 251903 (2018)
https://doi.org/10.1063/1.5038644
Published: June 2018
View articletitled, Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission
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Includes: Supplementary data
Journal Articles

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

Wei Sun, Syed Ahmed Al Muyeed, Renbo Song, Jonathan J. Wierer, Jr., Nelson Tansu
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 201106 (2018)
https://doi.org/10.1063/1.5028257
Published: May 2018
View articletitled, Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission
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Journal Articles

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

Featured
Y. Abe, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, M. Haruyama, W. Kada, O. Hanaizumi, S. Onoda, T. Ohshima
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 031105 (2018)
https://doi.org/10.1063/1.4994241
Published: January 2018
View articletitled, Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors
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Journal Articles

GaSbBi/GaSb quantum well laser diodes

Editor’s Pick
O. Delorme, L. Cerutti, E. Luna, G. Narcy, A. Trampert, E. Tournié, J.-B. Rodriguez
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 222106 (2017)
https://doi.org/10.1063/1.4984799
Published: June 2017
View articletitled, GaSbBi/GaSb quantum well laser diodes
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Journal Articles

Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching

Zhengfei Wei, Michael J. Newman, Wing C. Tsoi, Trystan M. Watson
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 123902 (2016)
https://doi.org/10.1063/1.4963134
Published: September 2016
View articletitled, Raman mapping analysis for removal of surface secondary phases of CZTS films using chemical etching
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Journal Articles

Enhanced optical properties due to indium incorporation in zinc oxide nanowires

S. Farid, S. Mukherjee, K. Sarkar, M. Mazouchi, M. A. Stroscio, M. Dutta
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 021106 (2016)
https://doi.org/10.1063/1.4939454
Published: January 2016
View articletitled, Enhanced optical properties due to indium incorporation in zinc oxide nanowires
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Journal Articles

Reduced interface recombination in Cu2ZnSnS4 solar cells with atomic layer deposition Zn1−xSnxOy buffer layers

C. Platzer-Björkman, C. Frisk, J. K. Larsen, T. Ericson, S.-Y. Li, J. J. S. Scragg, J. Keller, F. Larsson, T. Törndahl
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 243904 (2015)
https://doi.org/10.1063/1.4937998
Published: December 2015
View articletitled, Reduced interface recombination in Cu2ZnSnS4 solar cells with atomic layer deposition Zn1−xSnxOy buffer layers
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Journal Articles

Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers

Weng W. Chow, Alan Y. Liu, Arthur C. Gossard, John E. Bowers
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 171106 (2015)
https://doi.org/10.1063/1.4934838
Published: October 2015
View articletitled, Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers
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Journal Articles

Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy

W. Kong, W. Y. Jiao, J. C. Li, K. Collar, T. H. Kim, J. H. Leach, A. S. Brown
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 032102 (2015)
https://doi.org/10.1063/1.4927245
Published: July 2015
View articletitled, Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy
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Journal Articles

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, B. Gil
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 142101 (2015)
https://doi.org/10.1063/1.4917222
Published: April 2015
View articletitled, Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission
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Journal Articles

Radial InP/InAsP/InP heterostructure nanowires on patterned Si substrates using self-catalyzed growth for vertical-type optical devices

Kenichi Kawaguchi, Hisao Sudo, Manabu Matsuda, Kazuya Takemoto, Tsuyoshi Yamamoto, Yasuhiko Arakawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 012107 (2015)
https://doi.org/10.1063/1.4905555
Published: January 2015
View articletitled, Radial InP/InAsP/InP heterostructure nanowires on patterned Si substrates using self-catalyzed growth for vertical-type optical devices
Open the PDF for Radial InP/InAsP/InP heterostructure nanowires on patterned Si substrates using self-catalyzed growth for vertical-type optical devices in another window
Includes: Supplementary data