1-20 of 69
Positron annihilation spectroscopy
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions

Tetsuo Narita, Masakazu Kanechika, Kazuyoshi Tomita, Yoshitaka Nagasato, Takeshi Kondo, Tsutomu Uesugi, Satoshi Ikeda, Masayoshi Kosaki, Tohru Oka, Jun Suda
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 113505 (2023)
https://doi.org/10.1063/5.0141781
Published: March 2023
View article titled, Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN <em>p</em>–<em>n</em> junctions
Open the PDF for Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN <em>p</em>–<em>n</em> junctions in another window
Journal Articles

Split Ga vacancies in n-type and semi-insulating β -Ga2O3 single crystals

Editor’s Pick
A. Karjalainen, I. Makkonen, J. Etula, K. Goto, H. Murakami, Y. Kumagai, F. Tuomisto
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 072104 (2021)
https://doi.org/10.1063/5.0033930
Published: February 2021
View article titled, Split Ga vacancies in <em>n</em>-type and semi-insulating β -Ga<sub>2</sub>O<sub>3</sub> single crystals
Open the PDF for Split Ga vacancies in <em>n</em>-type and semi-insulating β -Ga<sub>2</sub>O<sub>3</sub> single crystals in another window
Journal Articles

Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

I. Prozheev, F. Mehnke, T. Wernicke, M. Kneissl, F. Tuomisto
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 142103 (2020)
https://doi.org/10.1063/5.0016494
Published: October 2020
View article titled, Electrical compensation and cation vacancies in Al rich Si-doped AlGaN
Open the PDF for Electrical compensation and cation vacancies in Al rich Si-doped AlGaN in another window
Journal Articles

Defect accommodation in off-stoichiometric (SrTiO3)nSrO Ruddlesden–Popper superlattices studied with positron annihilation spectroscopy

Editor’s Pick
Natalie M. Dawley, Berit H. Goodge, Werner Egger, Matthew R. Barone, Lena F. Kourkoutis, David J. Keeble, Darrell G. Schlom
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 062901 (2020)
https://doi.org/10.1063/5.0011136
Published: August 2020
View article titled, Defect accommodation in off-stoichiometric (SrTiO<sub>3</sub>)<sub><em>n</em></sub>SrO Ruddlesden–Popper superlattices studied with positron annihilation spectroscopy
Open the PDF for Defect accommodation in off-stoichiometric (SrTiO<sub>3</sub>)<sub><em>n</em></sub>SrO Ruddlesden–Popper superlattices studied with positron annihilation spectroscopy in another window
Includes: Supplementary data
Journal Articles

Room-temperature ferromagnetism in C + -implanted AlN films

R. Ye, J. D. Liu, H. J. Zhang, B. J. Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 262401 (2019)
https://doi.org/10.1063/1.5131036
Published: December 2019
View article titled, Room-temperature ferromagnetism in C + -implanted AlN films
Open the PDF for Room-temperature ferromagnetism in C + -implanted AlN films in another window
Includes: Supplementary data
Journal Articles

Effect of vacancies on thermoelectric properties of β-CuAgSe studied by positron annihilation

B. C. Gu, Z. Li, J. D. Liu, H. J. Zhang, B. J. Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 192106 (2019)
https://doi.org/10.1063/1.5126899
Published: November 2019
View article titled, Effect of vacancies on thermoelectric properties of β-CuAgSe studied by positron annihilation
Open the PDF for Effect of vacancies on thermoelectric properties of β-CuAgSe studied by positron annihilation in another window
Journal Articles

Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ¯ ) p-type GaN fabricated by sequential ion-implantation of Mg and H

K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, S. F. Chichibu
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 191901 (2018)
https://doi.org/10.1063/1.5050967
Published: November 2018
View article titled, Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ¯ ) p-type GaN fabricated by sequential ion-implantation of Mg and H
Open the PDF for Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ¯ ) p-type GaN fabricated by sequential ion-implantation of Mg and H in another window
Journal Articles

Vacancy-induced ferromagnetism in ZnO probed by spin-polarized positron annihilation spectroscopy

Masaki Maekawa, Hiroshi Abe, Atsumi Miyashita, Seiji Sakai, Shunya Yamamoto, Atsuo Kawasuso
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 172402 (2017)
https://doi.org/10.1063/1.4979696
Published: April 2017
View article titled, Vacancy-induced ferromagnetism in ZnO probed by spin-polarized positron annihilation spectroscopy
Open the PDF for Vacancy-induced ferromagnetism in ZnO probed by spin-polarized positron annihilation spectroscopy in another window
Journal Articles

Radiation-induced alloy rearrangement in InxGa1−xN

Editor’s Pick
V. Prozheeva, I. Makkonen, R. Cuscó, L. Artús, A. Dadgar, F. Plazaola, F. Tuomisto
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 132104 (2017)
https://doi.org/10.1063/1.4979410
Published: March 2017
View article titled, Radiation-induced alloy rearrangement in In<sub><em>x</em></sub>Ga<sub>1−</sub><sub><em>x</em></sub>N
Open the PDF for Radiation-induced alloy rearrangement in In<sub><em>x</em></sub>Ga<sub>1−</sub><sub><em>x</em></sub>N in another window
Journal Articles

Characterization of point defects in CdTe by positron annihilation spectroscopy

M. R. M. Elsharkawy, G. S. Kanda, E. E. Abdel-Hady, D. J. Keeble
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 242102 (2016)
https://doi.org/10.1063/1.4953781
Published: June 2016
View article titled, Characterization of point defects in CdTe by positron annihilation spectroscopy
Open the PDF for Characterization of point defects in CdTe by positron annihilation spectroscopy in another window
Journal Articles

On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films

Sathish Kumar Dhayalan, Jiri Kujala, Jonatan Slotte, Geoffrey Pourtois, Eddy Simoen, Erik Rosseel, Andriy Hikavyy, Yosuke Shimura, Serena Iacovo, Andre Stesmans, Roger Loo, Wilfried Vandervorst
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 082106 (2016)
https://doi.org/10.1063/1.4942605
Published: February 2016
View article titled, On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films
Open the PDF for On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films in another window
Journal Articles

Electrical compensation by Ga vacancies in Ga2O3 thin films

E. Korhonen, F. Tuomisto, D. Gogova, G. Wagner, M. Baldini, Z. Galazka, R. Schewski, M. Albrecht
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 242103 (2015)
https://doi.org/10.1063/1.4922814
Published: June 2015
View article titled, Electrical compensation by Ga vacancies in Ga<sub>2</sub>O<sub>3</sub> thin films
Open the PDF for Electrical compensation by Ga vacancies in Ga<sub>2</sub>O<sub>3</sub> thin films in another window
Journal Articles

Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C60

Cleber F. N. Marchiori, Natasha A. D. Yamamoto, Carolina F. Matos, Jiri Kujala, Andréia G. Macedo, Filip Tuomisto, Aldo J. G. Zarbin, Marlus Koehler, Lucimara S. Roman
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 133301 (2015)
https://doi.org/10.1063/1.4916515
Published: March 2015
View article titled, Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C<sub>60</sub>
Open the PDF for Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C<sub>60</sub> in another window
Includes: Supplementary data
Journal Articles

Increasing the achievable state of order in Ni-based Heusler alloys via quenched-in vacancies

Pascal Neibecker, Michael Leitner, Georg Benka, Winfried Petry
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 261904 (2014)
https://doi.org/10.1063/1.4905223
Published: December 2014
View article titled, Increasing the achievable state of order in Ni-based Heusler alloys via quenched-in vacancies
Open the PDF for Increasing the achievable state of order in Ni-based Heusler alloys via quenched-in vacancies in another window
Journal Articles

Point defect balance in epitaxial GaSb

N. Segercrantz, J. Slotte, I. Makkonen, J. Kujala, F. Tuomisto, Y. Song, S. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 082113 (2014)
https://doi.org/10.1063/1.4894473
Published: August 2014
View article titled, Point defect balance in epitaxial GaSb
Open the PDF for Point defect balance in epitaxial GaSb in another window
Journal Articles

Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys

D. Merida, J. A. García, V. Sánchez-Alarcos, J. I. Pérez-Landazábal, V. Recarte, F. Plazaola
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 231905 (2014)
https://doi.org/10.1063/1.4882903
Published: June 2014
View article titled, Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys
Open the PDF for Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys in another window
Journal Articles

Positron annihilation study for enhanced nitrogen-vacancy center formation in diamond by electron irradiation at 77 K

Z. Tang, T. Chiba, Y. Nagai, K. Inoue, T. Toyama, M. Hasegawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 172101 (2014)
https://doi.org/10.1063/1.4872243
Published: April 2014
View article titled, Positron annihilation study for enhanced nitrogen-vacancy center formation in diamond by electron irradiation at 77 K
Open the PDF for Positron annihilation study for enhanced nitrogen-vacancy center formation in diamond by electron irradiation at 77 K in another window
Journal Articles

Nano-porosity in GaSb induced by swift heavy ion irradiation

P. Kluth, J. Sullivan, W. Li, R. Weed, C. S. Schnohr, R. Giulian, L. L. Araujo, W. Lei, M. D. Rodriguez, B. Afra, T. Bierschenk, R. C. Ewing, M. C. Ridgway
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 023105 (2014)
https://doi.org/10.1063/1.4861747
Published: January 2014
View article titled, Nano-porosity in GaSb induced by swift heavy ion irradiation
Open the PDF for Nano-porosity in GaSb induced by swift heavy ion irradiation in another window
Journal Articles

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

Tatsuya Fujishima, Sameer Joglekar, Daniel Piedra, Hyung-Seok Lee, Yuhao Zhang, Akira Uedono, Tomás Palacios
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 083508 (2013)
https://doi.org/10.1063/1.4819334
Published: August 2013
View article titled, Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl<sub>3</sub> surface plasma treatment
Open the PDF for Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl<sub>3</sub> surface plasma treatment in another window
Journal Articles

Effects of sequential tungsten and helium ion implantation on nano-indentation hardness of tungsten

D. E. J. Armstrong, P. D. Edmondson, S. G. Roberts
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 251901 (2013)
https://doi.org/10.1063/1.4811825
Published: June 2013
View article titled, Effects of sequential tungsten and helium ion implantation on nano-indentation hardness of tungsten
Open the PDF for Effects of sequential tungsten and helium ion implantation on nano-indentation hardness of tungsten in another window