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Journal Articles

Ferroelectric Al_{1 − x}B_xN thin films integrated on Si

John Hayden, Joseph Shepard, Jon-Paul Maria

Appl. Phys. Lett. 123, 072901 (2023)

https://doi.org/10.1063/5.0156606

Published: August 2023

View article titled, Ferroelectric Al1 − xBxN thin films integrated on Si

Journal Articles

Mechanoluminescence of (Eu, Ho)-doped oxynitride glass-ceramics from the BaO-SiO₂-Si₃N₄ chemical system

Alexis Duval, Patrick Houizot, Xavier Rocquefelte, Tanguy Rouxel

Appl. Phys. Lett. 123, 011905 (2023)

https://doi.org/10.1063/5.0149749

Published: July 2023

View article titled, Mechanoluminescence of (Eu, Ho)-doped oxynitride glass-ceramics from the BaO-SiO2-Si3N4 chemical system

Includes: Supplementary data

Journal Articles

Tunable work function of molybdenum oxynitride for electron-selective contact in crystalline silicon solar cells

Zeyu Gu, Le Li, Guanlin Du, Yinyue Lin, Linfeng Lu, Jia Chen, Zheren Du, Ronglin Liu, Quan Cheng, Kun Gao, Xinbo Yang, Dongdong Li

Appl. Phys. Lett. 120, 123902 (2022)

https://doi.org/10.1063/5.0086801

Published: March 2022

View article titled, Tunable work function of molybdenum oxynitride for electron-selective contact in crystalline silicon solar cells

Includes: Supplementary data

Journal Articles

Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs

Li Zhang, Zheyang Zheng, Song Yang, Wenjie Song, Sirui Feng, Kevin J. Chen

Appl. Phys. Lett. 119, 053503 (2021)

https://doi.org/10.1063/5.0053252

Published: August 2021

View article titled, Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs

Journal Articles

Impact of tandem IGZO/ZnON TFT with energy-band aligned structure

Yoon-Seo Kim, Hyun-Mo Lee, Jun Hyung Lim, Jin-Seong Park

Appl. Phys. Lett. 117, 143505 (2020)

https://doi.org/10.1063/5.0023837

Published: October 2020

View article titled, Impact of tandem IGZO/ZnON TFT with energy-band aligned structure

Journal Articles

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

W. Hamouda, C. Lubin, S. Ueda, Y. Yamashita, O. Renault, F. Mehmood, T. Mikolajick, U. Schroeder, R. Negrea, N. Barrett

Appl. Phys. Lett. 116, 252903 (2020)

https://doi.org/10.1063/5.0012595

Published: June 2020

View article titled, Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

Includes: Supplementary data

Journal Articles

Large bandgap tunability of GaN/ZnO pseudobinary alloys through combined engineering of anions and cations

Fenglin Xian, Linhua Xu, Gaige Zheng, Zhaolou Cao, Jinhua Li, Shixin Pei, Jiandong Ye

Appl. Phys. Lett. 115, 231901 (2019)

https://doi.org/10.1063/1.5126930

Published: December 2019

View article titled, Large bandgap tunability of GaN/ZnO pseudobinary alloys through combined engineering of anions and cations

Includes: Supplementary data

Journal Articles

Thermoelectric properties of amorphous ZnO_xN_y thin films at room temperature

Yasushi Hirose, Masato Tsuchii, Kei Shigematsu, Yohei Kakefuda, Takao Mori, Tetsuya Hasegawa

Appl. Phys. Lett. 114, 193903 (2019)

https://doi.org/10.1063/1.5089679

Published: May 2019

View article titled, Thermoelectric properties of amorphous ZnOxNy thin films at room temperature

Includes: Supplementary data

Journal Articles

Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

Yong Huang, Jing-Ping Xu, Lu Liu, Zhi-Xiang Cheng, Pui-To Lai, Wing-Man Tang

Appl. Phys. Lett. 111, 053501 (2017)

https://doi.org/10.1063/1.4996722

Published: July 2017

View article titled, Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

Journal Articles

Comment on “Thickness and temperature depending intermixing of SiO_x/SiO₂ and SiO_xN_y/SiO₂ superlattices: Experimental observation and thermodynamic modeling” [Appl. Phys. Lett. 108 , 223102 (2016)]

D. Hiller, J. Laube, S. Gutsch, M. Zacharias

Appl. Phys. Lett. 109, 166101 (2016)

https://doi.org/10.1063/1.4965722

Published: October 2016

View article titled, Comment on “Thickness and temperature depending intermixing of SiOx/SiO2 and SiOxNy/SiO2 superlattices: Experimental observation and thermodynamic modeling” [Appl. Phys. Lett. 108 , 223102 (2016)]

Journal Articles

Synthesis of zirconium oxynitride in air under DC electric fields

Nobuhiro Morisaki, Hidehiro Yoshida, Koji Matsui, Tomoharu Tokunaga, Katsuhiro Sasaki, Takahisa Yamamoto

Appl. Phys. Lett. 109, 083104 (2016)

https://doi.org/10.1063/1.4961624

Published: August 2016

View article titled, Synthesis of zirconium oxynitride in air under DC electric fields

Journal Articles

Mechanical measurements on lithium phosphorous oxynitride coated silicon thin film electrodes for lithium-ion batteries during lithiation and delithiation

Ahmed Al-Obeidi, Dominik Kramer, Steven T. Boles, Reiner Mönig, Carl V. Thompson

Appl. Phys. Lett. 109, 071902 (2016)

https://doi.org/10.1063/1.4961234

Published: August 2016

View article titled, Mechanical measurements on lithium phosphorous oxynitride coated silicon thin film electrodes for lithium-ion batteries during lithiation and delithiation

Includes: Supplementary data

Journal Articles

Structural transition, subgap states, and carrier transport in anion-engineered zinc oxynitride nanocrystalline films

Fenglin Xian, Jiandong Ye, Shulin Gu, Hark Hoe Tan, Chennupati Jagadish

Appl. Phys. Lett. 109, 023109 (2016)

https://doi.org/10.1063/1.4958294

Published: July 2016

View article titled, Structural transition, subgap states, and carrier transport in anion-engineered zinc oxynitride nanocrystalline films

Includes: Supplementary data

Journal Articles

Venting temperature determines surface chemistry of magnetron sputtered TiN films

G. Greczynski, S. Mráz, L. Hultman, J. M. Schneider

Appl. Phys. Lett. 108, 041603 (2016)

https://doi.org/10.1063/1.4940974

Published: January 2016

View article titled, Venting temperature determines surface chemistry of magnetron sputtered TiN films

Journal Articles

Nitride passivation of the interface between high-k dielectrics and SiGe

Kasra Sardashti, Kai-Ting Hu, Kechao Tang, Shailesh Madisetti, Paul McIntyre, Serge Oktyabrsky, Shariq Siddiqui, Bhagawan Sahu, Naomi Yoshida, Jessica Kachian, Lin Dong, Bernd Fruhberger, Andrew C. Kummel

Appl. Phys. Lett. 108, 011604 (2016)

https://doi.org/10.1063/1.4939460

Published: January 2016

View article titled, Nitride passivation of the interface between high-k dielectrics and SiGe

Includes: Supplementary data

Journal Articles

Composition-induced structural, electrical, and magnetic phase transitions in AX-type mixed-valence cobalt oxynitride epitaxial thin films

Jumpei Takahashi, Yasushi Hirose, Daichi Oka, Shoichiro Nakao, Chang Yang, Tomoteru Fukumura, Isao Harayama, Daiichiro Sekiba, Tetsuya Hasegawa

Appl. Phys. Lett. 107, 231906 (2015)

https://doi.org/10.1063/1.4937431

Published: December 2015

View article titled, Composition-induced structural, electrical, and magnetic phase transitions in AX-type mixed-valence cobalt oxynitride epitaxial thin films

Includes: Supplementary data

Journal Articles

Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric

L. S. Wang, J. P. Xu, L. Liu, H. H. Lu, P. T. Lai, W. M. Tang

Appl. Phys. Lett. 106, 123504 (2015)

https://doi.org/10.1063/1.4916539

Published: March 2015

View article titled, Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric

Journal Articles

A crystalline oxide passivation for Al₂O₃/AlGaN/GaN

Xiaoye Qin, Hong Dong, Jiyoung Kim, Robert M. Wallace

Appl. Phys. Lett. 105, 141604 (2014)

https://doi.org/10.1063/1.4897641

Published: October 2014

View article titled, A crystalline oxide passivation for Al2O3/AlGaN/GaN

Includes: Supplementary data

Journal Articles

In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al₂O₃/AlGaN/GaN stacks

Xiaoye Qin, Antonio Lucero, Angelica Azcatl, Jiyoung Kim, Robert M. Wallace

Appl. Phys. Lett. 105, 011602 (2014)

https://doi.org/10.1063/1.4887056

Published: July 2014

View article titled, In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al2O3/AlGaN/GaN stacks

Journal Articles

The understanding of the drain-current fluctuation in a silicon-carbon source-drain strained n-channel metal-oxide-semiconductor field-effect transistors

E. R. Hsieh, Steve S. Chung

Appl. Phys. Lett. 104, 203503 (2014)

https://doi.org/10.1063/1.4879244

Published: May 2014

View article titled, The understanding of the drain-current fluctuation in a silicon-carbon source-drain strained n-channel metal-oxide-semiconductor field-effect transistors

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Topics

Ferroelectric Al_{1 − x}B_xN thin films integrated on Si

Mechanoluminescence of (Eu, Ho)-doped oxynitride glass-ceramics from the BaO-SiO₂-Si₃N₄ chemical system

Tunable work function of molybdenum oxynitride for electron-selective contact in crystalline silicon solar cells

Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs

Impact of tandem IGZO/ZnON TFT with energy-band aligned structure

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

Large bandgap tunability of GaN/ZnO pseudobinary alloys through combined engineering of anions and cations

Thermoelectric properties of amorphous ZnO_xN_y thin films at room temperature

Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

Comment on “Thickness and temperature depending intermixing of SiO_x/SiO₂ and SiO_xN_y/SiO₂ superlattices: Experimental observation and thermodynamic modeling” [Appl. Phys. Lett. 108 , 223102 (2016)]

Synthesis of zirconium oxynitride in air under DC electric fields

Mechanical measurements on lithium phosphorous oxynitride coated silicon thin film electrodes for lithium-ion batteries during lithiation and delithiation

Structural transition, subgap states, and carrier transport in anion-engineered zinc oxynitride nanocrystalline films

Venting temperature determines surface chemistry of magnetron sputtered TiN films

Nitride passivation of the interface between high-k dielectrics and SiGe

Composition-induced structural, electrical, and magnetic phase transitions in AX-type mixed-valence cobalt oxynitride epitaxial thin films

Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric

A crystalline oxide passivation for Al₂O₃/AlGaN/GaN

In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al₂O₃/AlGaN/GaN stacks

The understanding of the drain-current fluctuation in a silicon-carbon source-drain strained n-channel metal-oxide-semiconductor field-effect transistors

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