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Journal Articles

Separated striations in n-type Czochralski silicon solar cells

Guixiu Li, Shuai Yuan, Shenglang Zhou, Yihua Wu, Hongrong Chen, Huali Zhang, Chen Wang, Lei Wang, Xuegong Yu, Deren Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 252103 (2024)
https://doi.org/10.1063/5.0204270
Published: June 2024
View article titled, Separated striations in n-type Czochralski silicon solar cells
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Journal Articles

The influence of threading dislocations propagating through an AlGaN UVC LED

Douglas Cameron, Paul R. Edwards, Frank Mehnke, Gunnar Kusch, Luca Sulmoni, Marcel Schilling, Tim Wernicke, Michael Kneissl, Robert W. Martin
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 162101 (2022)
https://doi.org/10.1063/5.0086034
Published: April 2022
View article titled, The influence of threading dislocations propagating through an AlGaN UVC LED
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Includes: Supplementary data
Journal Articles

High-resolution planar electron beam induced current in bulk diodes using high-energy electrons

Zoey Warecki, Andrew A. Allerman, Andrew M. Armstrong, A. Alec Talin, John Cumings
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 014103 (2021)
https://doi.org/10.1063/5.0051352
Published: July 2021
View article titled, High-resolution planar electron beam induced current in bulk diodes using high-energy electrons
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Journal Articles

Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β -Ga2O3 Schottky rectifiers

Sushrut Modak, Leonid Chernyak, Alfons Schulte, Minghan Xian, Fan Ren, Stephen J. Pearton, Igor Lubomirsky, Arie Ruzin, Sergey S. Kosolobov, Vladimir P. Drachev
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 202105 (2021)
https://doi.org/10.1063/5.0052601
Published: May 2021
View article titled, Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> Schottky rectifiers
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Journal Articles

Experimental estimation of electron–hole pair creation energy in β -Ga2O3

E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, F. Ren, S. J. Pearton
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 202106 (2021)
https://doi.org/10.1063/5.0053301
Published: May 2021
View article titled, Experimental estimation of electron–hole pair creation energy in <em>β</em> -Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Identification of localized radiation damage in power MOSFETs using EBIC imaging

David S. Ashby, Diana Garland, Madeline G. Esposito, Gyorgy Vizkelethy, Matthew J. Marinella, Michael McLain, J. P. Llinás, A. Alec Talin
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 202104 (2021)
https://doi.org/10.1063/5.0053892
Published: May 2021
View article titled, Identification of localized radiation damage in power MOSFETs using EBIC imaging
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Includes: Supplementary data
Journal Articles

Understanding efficiency differences of betavoltaic batteries measured by electron gun mimicked source and radioactive β source

Editor’s Pick
Chen Zhao, Ao Liu, Song Bai, Yiying Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 193901 (2020)
https://doi.org/10.1063/5.0028450
Published: November 2020
View article titled, Understanding efficiency differences of betavoltaic batteries measured by electron gun mimicked source and radioactive β source
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Journal Articles

Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires

O. Saket, C. Himwas, A. Cattoni, F. Oehler, F. Bayle, S. Collin, L. Travers, A. Babichev, F. H. Julien, J. C. Harmand, M. Tchernycheva
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 123104 (2020)
https://doi.org/10.1063/5.0022157
Published: September 2020
View article titled, Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires
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Includes: Supplementary data
Journal Articles

Scanning transmission electron microscope mapping of electronic transport in polycrystalline BaTiO3 ceramic capacitors

W. A. Hubbard, Z. Lingley, J. Theiss, S. Sitzman, T. Ayvazian, M. Brodie, B. Foran
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 133502 (2019)
https://doi.org/10.1063/1.5117055
Published: September 2019
View article titled, Scanning transmission electron microscope mapping of electronic transport in polycrystalline BaTiO<sub>3</sub> ceramic capacitors
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Includes: Supplementary data
Journal Articles

Nanoscale analysis of electrical junctions in InGaP nanowires grown by template-assisted selective epitaxy

V. Piazza, S. Wirths, N. Bologna, A. A. Ahmed, F. Bayle, H. Schmid, F. Julien, M. Tchernycheva
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 103101 (2019)
https://doi.org/10.1063/1.5085405
Published: March 2019
View article titled, Nanoscale analysis of electrical junctions in InGaP nanowires grown by template-assisted selective epitaxy
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Includes: Supplementary data
Journal Articles

Understanding the charge transport mechanisms through ultrathin SiOx layers in passivated contacts for high-efficiency silicon solar cells

Abhijit S. Kale, William Nemeth, Harvey Guthrey, Ellis Kennedy, Andrew G. Norman, Matthew Page, Mowafak Al-Jassim, David L. Young, Sumit Agarwal, Paul Stradins
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 083902 (2019)
https://doi.org/10.1063/1.5081832
Published: February 2019
View article titled, Understanding the charge transport mechanisms through ultrathin SiO<sub><em>x</em></sub> layers in passivated contacts for high-efficiency silicon solar cells
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Journal Articles

Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

Jonathan Lee, Elena Flitsiyan, Leonid Chernyak, Jiancheng Yang, Fan Ren, Stephen J. Pearton, Boris Meyler, Y. Joseph Salzman
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 082104 (2018)
https://doi.org/10.1063/1.5011971
Published: February 2018
View article titled, Effect of 1.5 MeV electron irradiation on β-Ga<sub>2</sub>O<sub>3</sub> carrier lifetime and diffusion length
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Journal Articles

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, Jiancheng Yang, F. Ren, Gwangseok Yang, Jihyun Kim, A. Kuramata, S. J. Pearton
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 032107 (2018)
https://doi.org/10.1063/1.5012993
Published: January 2018
View article titled, Point defect induced degradation of electrical properties of Ga<sub>2</sub>O<sub>3</sub> by 10 MeV proton damage
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Journal Articles

SEM imaging of acoustically stimulated charge transport in solids

Evgeny Emelin, H. D. Cho, Zeke Insepov, J. C. Lee, Tae Won Kang, Gennady Panin, Dmitry Roshchupkin, Kurbangali Tynyshtykbayev
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 264103 (2017)
https://doi.org/10.1063/1.4986779
Published: June 2017
View article titled, SEM imaging of acoustically stimulated charge transport in solids
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Journal Articles

Defect and field-enhancement characterization through electron-beam-induced current analysis

Hitoshi Umezawa, Hiroki Gima, Khaled Driche, Yukako Kato, Tsuyoshi Yoshitake, Yoshiaki Mokuno, Etienne Gheeraert
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 182103 (2017)
https://doi.org/10.1063/1.4982590
Published: May 2017
View article titled, Defect and field-enhancement characterization through electron-beam-induced current analysis
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Journal Articles

Imaging interfacial electrical transport in graphene–MoS2 heterostructures with electron-beam-induced-currents

E. R. White, Alexander Kerelsky, William A. Hubbard, Rohan Dhall, Stephen B. Cronin, Matthew Mecklenburg, B. C. Regan
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 223104 (2015)
https://doi.org/10.1063/1.4936763
Published: December 2015
View article titled, Imaging interfacial electrical transport in graphene–MoS<sub>2</sub> heterostructures with electron-beam-induced-currents
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Includes: Supplementary data
Journal Articles

Movement of basal plane dislocations in GaN during electron beam irradiation

E. B. Yakimov, P. S. Vergeles, A. Y. Polyakov, In-Hwan Lee, S. J. Pearton
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 132101 (2015)
https://doi.org/10.1063/1.4916632
Published: March 2015
View article titled, Movement of basal plane dislocations in GaN during electron beam irradiation
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Journal Articles

Investigation of dislocations in Nb-doped SrTiO3 by electron-beam-induced current and transmission electron microscopy

Jun Chen, Takashi Sekiguchi, Jianyong Li, Shun Ito, Wei Yi, Atsushi Ogura
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 102109 (2015)
https://doi.org/10.1063/1.4915298
Published: March 2015
View article titled, Investigation of dislocations in Nb-doped SrTiO<sub>3</sub> by electron-beam-induced current and transmission electron microscopy
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Journal Articles

Method to determine the optimal silicon nanowire length for photovoltaic devices

Yingfeng Li, Meicheng Li, Ruike Li, Pengfei Fu, Lihua Chu, Dandan Song
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 091908 (2015)
https://doi.org/10.1063/1.4914372
Published: March 2015
View article titled, Method to determine the optimal silicon nanowire length for photovoltaic devices
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Includes: Supplementary data
Journal Articles

Direct evidence of void passivation in Cu(InGa)(SSe)2 absorber layers

Dongho Lee, Jaehan Lee, Sung Heo, Jong-Bong Park, Young-Su Kim, Chan B. Mo, Kwangsoo Huh, JungYup Yang, Junggyu Nam, Dohyun Baek, Sungchan Park, ByoungJune Kim, Dongseop Kim, Yoonmook Kang
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 083903 (2015)
https://doi.org/10.1063/1.4913612
Published: February 2015
View article titled, Direct evidence of void passivation in Cu(InGa)(SSe)<sub>2</sub> absorber layers
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