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Journal Articles

Determination of donor- and acceptor-like interface trap density using photoresponsive GIDL in vertically stacked Si-NW GAA FETs

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Seohyeon Park, Jaewook Yoo, Minah Park, Hongseung Lee, Hyeonjun Song, Seongbin Lim, Soyeon Kim, Sojin Jung, TaeWan Kim, Yang-Kyu Choi, Hagyoul Bae
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 122102 (2025)
https://doi.org/10.1063/5.0254522
Published: March 2025
View articletitled, Determination of donor- and acceptor-like interface trap density using photoresponsive GIDL in vertically stacked Si-NW GAA FETs
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Journal Articles

The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method

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P. Kruszewski, A. Fiedler, Z. Galazka
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062110 (2025)
https://doi.org/10.1063/5.0251567
Published: February 2025
View articletitled, The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method
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Journal Articles

Probing interfacial states in β-Ga2O3/SiO2 TFTs for high-response broad-band photodetection

Editor’s Pick
Yonghui Zhang, Rui Zhu, Wenxing Huo, Huili Liang, Zengxia Mei
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 021605 (2025)
https://doi.org/10.1063/5.0238245
Published: January 2025
View articletitled, Probing interfacial states in β-Ga2O3/SiO2 TFTs for high-response broad-band photodetection
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Journal Articles

Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing

Takuma Kobayashi, Kensei Maeda, Masahiro Hara, Mikito Nozaki, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012108 (2025)
https://doi.org/10.1063/5.0245289
Published: January 2025
View articletitled, Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing
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Journal Articles

Effect of doping in small-size hybrid nanostructures for plasmonic catalysis

Igor V. Smetanin, Alexander V. Uskov, Nikolay V. Nikonorov
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 011905 (2025)
https://doi.org/10.1063/5.0228172
Published: January 2025
View articletitled, Effect of doping in small-size hybrid nanostructures for plasmonic catalysis
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Journal Articles

Reliability of NiO/β-Ga2O3 bipolar heterojunction

Hehe Gong, Xin Yang, Matthew Porter, Zineng Yang, Bixuan Wang, Li Li, Lan Fu, Kohei Sasaki, Han Wang, Shulin Gu, Rong Zhang, Jiandong Ye, Yuhao Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012102 (2025)
https://doi.org/10.1063/5.0243015
Published: January 2025
View articletitled, Reliability of NiO/β-Ga2O3 bipolar heterojunction
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Journal Articles

Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics

Takaya Abe, Motoya Shinozaki, Kazuma Matsumura, Takumi Aizawa, Takeshi Kumasaka, Norikazu Ito, Taketoshi Tanaka, Ken Nakahara, Tomohiro Otsuka
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 253501 (2024)
https://doi.org/10.1063/5.0232463
Published: December 2024
View articletitled, Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics
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Journal Articles

Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs

Takuma Kobayashi, Kaho Koyanagi, Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 252101 (2024)
https://doi.org/10.1063/5.0245907
Published: December 2024
View articletitled, Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs
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Journal Articles

Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface

Shuto Hattori, Atsushi Oshiyama, Kenji Shiraishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 161601 (2024)
https://doi.org/10.1063/5.0223569
Published: October 2024
View articletitled, Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface
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Journal Articles

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

Kangyao Wen, Jiaqi He, Yang Jiang, Fangzhou Du, Chenkai Deng, Peiran Wang, Chuying Tang, Wenmao Li, Qiaoyu Hu, Yuhan Sun, Qing Wang, Yulong Jiang, Hongyu Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 142105 (2024)
https://doi.org/10.1063/5.0230096
Published: October 2024
View articletitled, Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability
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Journal Articles

High EQE of 43.76% in solution-processed OLEDs operating at a wavelength of 626 nm

Jingtao Zhang, Mengge Wu, Ding Zheng, Juan Zhao, Junsheng Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 121102 (2024)
https://doi.org/10.1063/5.0225786
Published: September 2024
View articletitled, High EQE of 43.76% in solution-processed OLEDs operating at a wavelength of 626 nm
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Journal Articles

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Editor’s Pick
Yiqun Zhang, Hui Zhu, Xing Liu, Zhirang Zhang, Chao Xu, Keyu Ren, Chunsheng Guo, Yamin Zhang, Lixing Zhou, Shiwei Feng
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 032101 (2024)
https://doi.org/10.1063/5.0197849
Published: July 2024
View articletitled, Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices
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Journal Articles

Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation

Xinghuan Chen, Zhiyuan He, Yijun Shi, Zeheng Wang, Fangzhou Wang, Ruize Sun, Yiqiang Chen, Yuan Chen, Liang He, Guoguang Lu, Wanjun Chen, Chao Liu, Bo Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173501 (2024)
https://doi.org/10.1063/5.0196130
Published: April 2024
View articletitled, Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation
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Journal Articles

Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation

Yuanquan Huang, Hongye Yuan, Bowen Nie, Tiancheng Gong, Yuan Wang, Shuxian Lv, Pengfei Jiang, Wei Wei, Yang Yang, Junshuai Chai, Zhicheng Wu, Xiaolei Wang, Qing Luo
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 133504 (2024)
https://doi.org/10.1063/5.0196442
Published: March 2024
View articletitled, Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation
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Journal Articles

Electrochemical control of photoluminescence in pure wurtzite CdSe/CdS core/shell nanocrystals

Feifei Cai, Hui Zhang, Huichao Zhang, Bo Huang, Hongyu Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 101110 (2024)
https://doi.org/10.1063/5.0194567
Published: March 2024
View articletitled, Electrochemical control of photoluminescence in pure wurtzite CdSe/CdS core/shell nanocrystals
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Includes: Supplementary data
Journal Articles

Study on the single-event burnout mechanism of GaN MMIC power amplifiers

Editor’s Pick
Hao Zhang, Xuefeng Zheng, Danmei Lin, Ling Lv, Yanrong Cao, Yuehua Hong, Fang Zhang, Xiaohu Wang, Yingzhe Wang, Weidong Zhang, Jianfu Zhang, Xiaohua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 082105 (2024)
https://doi.org/10.1063/5.0185332
Published: February 2024
View articletitled, Study on the single-event burnout mechanism of GaN MMIC power amplifiers
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Journal Articles

Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer

Haesung Kim, Hyojin Yang, Seongwon Lee, Sanghyuk Yun, Junseong Park, Sejun Park, Ha-Neul Lee, Hyeonsik Kim, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon, Jong-Ho Bae
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 033503 (2024)
https://doi.org/10.1063/5.0172204
Published: January 2024
View articletitled, Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer
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Journal Articles

Capacitance–voltage extraction method for the deep-level defect distribution in organic photodiode

Wencai Zuo, Sai Liu, Haoyang Li, Lianjie Zhang, Weijing Wu, Junwu Chen, Junbiao Peng
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 263504 (2023)
https://doi.org/10.1063/5.0179058
Published: December 2023
View articletitled, Capacitance–voltage extraction method for the deep-level defect distribution in organic photodiode
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Journal Articles

Electrical conduction behavior in ferroelectric polymer-based composites incorporating metal halide perovskite

Lingyu Zhang, Yuan Deng, Yao Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 222901 (2023)
https://doi.org/10.1063/5.0172406
Published: November 2023
View articletitled, Electrical conduction behavior in ferroelectric polymer-based composites incorporating metal halide perovskite
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Includes: Supplementary data
Journal Articles

Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs

Editor’s Pick
Ajay Shanbhag, Francois Grandpierron, Kathia Harrouche, Farid Medjdoub
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 142102 (2023)
https://doi.org/10.1063/5.0168918
Published: October 2023
View articletitled, Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs
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