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Journal Articles
Nonlinear transport in carbon quantum dot electronic devices: Experiment and theory
Available to PurchaseScott Copeland, Sungguen Ryu, Kazunari Imai, Nicholas Krasco, Zhixiang Lu, David Sánchez, Paul Czubarow
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 232104 (2025)
Published: June 2025
Journal Articles
Determination of donor- and acceptor-like interface trap density using photoresponsive GIDL in vertically stacked Si-NW GAA FETs
Seohyeon Park, Jaewook Yoo, Minah Park, Hongseung Lee, Hyeonjun Song, Seongbin Lim, Soyeon Kim, Sojin Jung, TaeWan Kim, Yang-Kyu Choi, Hagyoul Bae
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 122102 (2025)
Published: March 2025
Journal Articles
The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 062110 (2025)
Published: February 2025
Journal Articles
Probing interfacial states in β-Ga2O3/SiO2 TFTs for high-response broad-band photodetection
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 021605 (2025)
Published: January 2025
Journal Articles
Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 012108 (2025)
Published: January 2025
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Effect of doping in small-size hybrid nanostructures for plasmonic catalysis
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 011905 (2025)
Published: January 2025
Journal Articles
Reliability of NiO/β-Ga2O3 bipolar heterojunction
Available to PurchaseHehe Gong, Xin Yang, Matthew Porter, Zineng Yang, Bixuan Wang, Li Li, Lan Fu, Kohei Sasaki, Han Wang, Shulin Gu, Rong Zhang, Jiandong Ye, Yuhao Zhang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 012102 (2025)
Published: January 2025
Journal Articles
Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics
Available to PurchaseTakaya Abe, Motoya Shinozaki, Kazuma Matsumura, Takumi Aizawa, Takeshi Kumasaka, Norikazu Ito, Taketoshi Tanaka, Ken Nakahara, Tomohiro Otsuka
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 253501 (2024)
Published: December 2024
Journal Articles
Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 252101 (2024)
Published: December 2024
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Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 161601 (2024)
Published: October 2024
Journal Articles
Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability
Available to PurchaseKangyao Wen, Jiaqi He, Yang Jiang, Fangzhou Du, Chenkai Deng, Peiran Wang, Chuying Tang, Wenmao Li, Qiaoyu Hu, Yuhan Sun, Qing Wang, Yulong Jiang, Hongyu Yu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 142105 (2024)
Published: October 2024
Journal Articles
Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices
Yiqun Zhang, Hui Zhu, Xing Liu, Zhirang Zhang, Chao Xu, Keyu Ren, Chunsheng Guo, Yamin Zhang, Lixing Zhou, Shiwei Feng
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 032101 (2024)
Published: July 2024
Journal Articles
Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation
Available to PurchaseXinghuan Chen, Zhiyuan He, Yijun Shi, Zeheng Wang, Fangzhou Wang, Ruize Sun, Yiqiang Chen, Yuan Chen, Liang He, Guoguang Lu, Wanjun Chen, Chao Liu, Bo Zhang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 173501 (2024)
Published: April 2024
Journal Articles
Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation
Available to PurchaseYuanquan Huang, Hongye Yuan, Bowen Nie, Tiancheng Gong, Yuan Wang, Shuxian Lv, Pengfei Jiang, Wei Wei, Yang Yang, Junshuai Chai, Zhicheng Wu, Xiaolei Wang, Qing Luo
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 133504 (2024)
Published: March 2024
Journal Articles
Electrochemical control of photoluminescence in pure wurtzite CdSe/CdS core/shell nanocrystals
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 101110 (2024)
Published: March 2024
Includes: Supplementary data
Journal Articles
Hao Zhang, Xuefeng Zheng, Danmei Lin, Ling Lv, Yanrong Cao, Yuehua Hong, Fang Zhang, Xiaohu Wang, Yingzhe Wang, Weidong Zhang, Jianfu Zhang, Xiaohua Ma, Yue Hao
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 082105 (2024)
Published: February 2024
Journal Articles
Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer
Available to PurchaseHaesung Kim, Hyojin Yang, Seongwon Lee, Sanghyuk Yun, Junseong Park, Sejun Park, Ha-Neul Lee, Hyeonsik Kim, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon, Jong-Ho Bae
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 033503 (2024)
Published: January 2024
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Capacitance–voltage extraction method for the deep-level defect distribution in organic photodiode
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 123, 263504 (2023)
Published: December 2023
Journal Articles
Electrical conduction behavior in ferroelectric polymer-based composites incorporating metal halide perovskite
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 123, 222901 (2023)
Published: November 2023
Includes: Supplementary data
Journal Articles
Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs
Journal:
Applied Physics Letters
Appl. Phys. Lett. 123, 142102 (2023)
Published: October 2023
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