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Journal Articles

Nonlinear transport in carbon quantum dot electronic devices: Experiment and theory

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Scott Copeland, Sungguen Ryu, Kazunari Imai, Nicholas Krasco, Zhixiang Lu, David Sánchez, Paul Czubarow
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 232104 (2025)
https://doi.org/10.1063/5.0263294
Published: June 2025
View articletitled, Nonlinear transport in carbon quantum dot electronic devices: Experiment and theory
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Journal Articles

Determination of donor- and acceptor-like interface trap density using photoresponsive GIDL in vertically stacked Si-NW GAA FETs

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Seohyeon Park, Jaewook Yoo, Minah Park, Hongseung Lee, Hyeonjun Song, Seongbin Lim, Soyeon Kim, Sojin Jung, TaeWan Kim, Yang-Kyu Choi, Hagyoul Bae
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 122102 (2025)
https://doi.org/10.1063/5.0254522
Published: March 2025
View articletitled, Determination of donor- and acceptor-like interface trap density using photoresponsive GIDL in vertically stacked Si-NW GAA FETs
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Journal Articles

The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method

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P. Kruszewski, A. Fiedler, Z. Galazka
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062110 (2025)
https://doi.org/10.1063/5.0251567
Published: February 2025
View articletitled, The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method
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Journal Articles

Probing interfacial states in β-Ga2O3/SiO2 TFTs for high-response broad-band photodetection

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Yonghui Zhang, Rui Zhu, Wenxing Huo, Huili Liang, Zengxia Mei
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 021605 (2025)
https://doi.org/10.1063/5.0238245
Published: January 2025
View articletitled, Probing interfacial states in β-Ga2O3/SiO2 TFTs for high-response broad-band photodetection
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Journal Articles

Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing

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Takuma Kobayashi, Kensei Maeda, Masahiro Hara, Mikito Nozaki, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012108 (2025)
https://doi.org/10.1063/5.0245289
Published: January 2025
View articletitled, Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing
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Journal Articles

Effect of doping in small-size hybrid nanostructures for plasmonic catalysis

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Igor V. Smetanin, Alexander V. Uskov, Nikolay V. Nikonorov
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 011905 (2025)
https://doi.org/10.1063/5.0228172
Published: January 2025
View articletitled, Effect of doping in small-size hybrid nanostructures for plasmonic catalysis
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Journal Articles

Reliability of NiO/β-Ga2O3 bipolar heterojunction

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Hehe Gong, Xin Yang, Matthew Porter, Zineng Yang, Bixuan Wang, Li Li, Lan Fu, Kohei Sasaki, Han Wang, Shulin Gu, Rong Zhang, Jiandong Ye, Yuhao Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012102 (2025)
https://doi.org/10.1063/5.0243015
Published: January 2025
View articletitled, Reliability of NiO/β-Ga2O3 bipolar heterojunction
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Journal Articles

Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics

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Takaya Abe, Motoya Shinozaki, Kazuma Matsumura, Takumi Aizawa, Takeshi Kumasaka, Norikazu Ito, Taketoshi Tanaka, Ken Nakahara, Tomohiro Otsuka
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 253501 (2024)
https://doi.org/10.1063/5.0232463
Published: December 2024
View articletitled, Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics
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Journal Articles

Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs

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Takuma Kobayashi, Kaho Koyanagi, Hirohisa Hirai, Mitsuru Sometani, Mitsuo Okamoto, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 252101 (2024)
https://doi.org/10.1063/5.0245907
Published: December 2024
View articletitled, Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs
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Journal Articles

Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface

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Shuto Hattori, Atsushi Oshiyama, Kenji Shiraishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 161601 (2024)
https://doi.org/10.1063/5.0223569
Published: October 2024
View articletitled, Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface
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Journal Articles

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

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Kangyao Wen, Jiaqi He, Yang Jiang, Fangzhou Du, Chenkai Deng, Peiran Wang, Chuying Tang, Wenmao Li, Qiaoyu Hu, Yuhan Sun, Qing Wang, Yulong Jiang, Hongyu Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 142105 (2024)
https://doi.org/10.1063/5.0230096
Published: October 2024
View articletitled, Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability
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Journal Articles

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

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Yiqun Zhang, Hui Zhu, Xing Liu, Zhirang Zhang, Chao Xu, Keyu Ren, Chunsheng Guo, Yamin Zhang, Lixing Zhou, Shiwei Feng
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 032101 (2024)
https://doi.org/10.1063/5.0197849
Published: July 2024
View articletitled, Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices
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Journal Articles

Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation

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Xinghuan Chen, Zhiyuan He, Yijun Shi, Zeheng Wang, Fangzhou Wang, Ruize Sun, Yiqiang Chen, Yuan Chen, Liang He, Guoguang Lu, Wanjun Chen, Chao Liu, Bo Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173501 (2024)
https://doi.org/10.1063/5.0196130
Published: April 2024
View articletitled, Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation
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Journal Articles

Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation

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Yuanquan Huang, Hongye Yuan, Bowen Nie, Tiancheng Gong, Yuan Wang, Shuxian Lv, Pengfei Jiang, Wei Wei, Yang Yang, Junshuai Chai, Zhicheng Wu, Xiaolei Wang, Qing Luo
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 133504 (2024)
https://doi.org/10.1063/5.0196442
Published: March 2024
View articletitled, Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation
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Journal Articles

Electrochemical control of photoluminescence in pure wurtzite CdSe/CdS core/shell nanocrystals

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Feifei Cai, Hui Zhang, Huichao Zhang, Bo Huang, Hongyu Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 101110 (2024)
https://doi.org/10.1063/5.0194567
Published: March 2024
View articletitled, Electrochemical control of photoluminescence in pure wurtzite CdSe/CdS core/shell nanocrystals
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Includes: Supplementary data
Journal Articles

Study on the single-event burnout mechanism of GaN MMIC power amplifiers

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Hao Zhang, Xuefeng Zheng, Danmei Lin, Ling Lv, Yanrong Cao, Yuehua Hong, Fang Zhang, Xiaohu Wang, Yingzhe Wang, Weidong Zhang, Jianfu Zhang, Xiaohua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 082105 (2024)
https://doi.org/10.1063/5.0185332
Published: February 2024
View articletitled, Study on the single-event burnout mechanism of GaN MMIC power amplifiers
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Journal Articles

Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer

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Haesung Kim, Hyojin Yang, Seongwon Lee, Sanghyuk Yun, Junseong Park, Sejun Park, Ha-Neul Lee, Hyeonsik Kim, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon, Jong-Ho Bae
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 033503 (2024)
https://doi.org/10.1063/5.0172204
Published: January 2024
View articletitled, Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer
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Journal Articles

Capacitance–voltage extraction method for the deep-level defect distribution in organic photodiode

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Wencai Zuo, Sai Liu, Haoyang Li, Lianjie Zhang, Weijing Wu, Junwu Chen, Junbiao Peng
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 263504 (2023)
https://doi.org/10.1063/5.0179058
Published: December 2023
View articletitled, Capacitance–voltage extraction method for the deep-level defect distribution in organic photodiode
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Journal Articles

Electrical conduction behavior in ferroelectric polymer-based composites incorporating metal halide perovskite

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Lingyu Zhang, Yuan Deng, Yao Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 222901 (2023)
https://doi.org/10.1063/5.0172406
Published: November 2023
View articletitled, Electrical conduction behavior in ferroelectric polymer-based composites incorporating metal halide perovskite
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Includes: Supplementary data
Journal Articles

Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs

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Ajay Shanbhag, Francois Grandpierron, Kathia Harrouche, Farid Medjdoub
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 142102 (2023)
https://doi.org/10.1063/5.0168918
Published: October 2023
View articletitled, Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs
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