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Journal Articles

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Yiqun Zhang, Hui Zhu, Xing Liu, Zhirang Zhang, Chao Xu, Keyu Ren, Chunsheng Guo, Yamin Zhang, Lixing Zhou, Shiwei Feng

Appl. Phys. Lett. 125, 032101 (2024)

https://doi.org/10.1063/5.0197849

Published: July 2024

View article titled, Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Journal Articles

Physical insight into the abnormal V_TH instability of Schottky p-GaN HEMTs under high-frequency operation

Xinghuan Chen, Zhiyuan He, Yijun Shi, Zeheng Wang, Fangzhou Wang, Ruize Sun, Yiqiang Chen, Yuan Chen, Liang He, Guoguang Lu, Wanjun Chen, Chao Liu, Bo Zhang

Appl. Phys. Lett. 124, 173501 (2024)

https://doi.org/10.1063/5.0196130

Published: April 2024

View article titled, Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation

Journal Articles

Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation

Yuanquan Huang, Hongye Yuan, Bowen Nie, Tiancheng Gong, Yuan Wang, Shuxian Lv, Pengfei Jiang, Wei Wei, Yang Yang, Junshuai Chai, Zhicheng Wu, Xiaolei Wang, Qing Luo

Appl. Phys. Lett. 124, 133504 (2024)

https://doi.org/10.1063/5.0196442

Published: March 2024

View article titled, Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation

Journal Articles

Electrochemical control of photoluminescence in pure wurtzite CdSe/CdS core/shell nanocrystals

Feifei Cai, Hui Zhang, Huichao Zhang, Bo Huang, Hongyu Yang

Appl. Phys. Lett. 124, 101110 (2024)

https://doi.org/10.1063/5.0194567

Published: March 2024

View article titled, Electrochemical control of photoluminescence in pure wurtzite CdSe/CdS core/shell nanocrystals

Includes: Supplementary data

Journal Articles

Study on the single-event burnout mechanism of GaN MMIC power amplifiers

Hao Zhang, Xuefeng Zheng, Danmei Lin, Ling Lv, Yanrong Cao, Yuehua Hong, Fang Zhang, Xiaohu Wang, Yingzhe Wang, Weidong Zhang, Jianfu Zhang, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 124, 082105 (2024)

https://doi.org/10.1063/5.0185332

Published: February 2024

View article titled, Study on the single-event burnout mechanism of GaN MMIC power amplifiers

Journal Articles

Comprehensive analysis of read-after-write latency in HfZrO_X-based ferroelectric field-effect-transistors with SiO₂ interfacial layer

Haesung Kim, Hyojin Yang, Seongwon Lee, Sanghyuk Yun, Junseong Park, Sejun Park, Ha-Neul Lee, Hyeonsik Kim, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon, Jong-Ho Bae

Appl. Phys. Lett. 124, 033503 (2024)

https://doi.org/10.1063/5.0172204

Published: January 2024

View article titled, Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer

Journal Articles

Capacitance–voltage extraction method for the deep-level defect distribution in organic photodiode

Wencai Zuo, Sai Liu, Haoyang Li, Lianjie Zhang, Weijing Wu, Junwu Chen, Junbiao Peng

Appl. Phys. Lett. 123, 263504 (2023)

https://doi.org/10.1063/5.0179058

Published: December 2023

View article titled, Capacitance–voltage extraction method for the deep-level defect distribution in organic photodiode

Journal Articles

Electrical conduction behavior in ferroelectric polymer-based composites incorporating metal halide perovskite

Lingyu Zhang, Yuan Deng, Yao Wang

Appl. Phys. Lett. 123, 222901 (2023)

https://doi.org/10.1063/5.0172406

Published: November 2023

View article titled, Electrical conduction behavior in ferroelectric polymer-based composites incorporating metal halide perovskite

Includes: Supplementary data

Journal Articles

Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs

Ajay Shanbhag, Francois Grandpierron, Kathia Harrouche, Farid Medjdoub

Appl. Phys. Lett. 123, 142102 (2023)

https://doi.org/10.1063/5.0168918

Published: October 2023

View article titled, Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs

Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart

Appl. Phys. Lett. 123, 112101 (2023)

https://doi.org/10.1063/5.0159560

Published: September 2023

View article titled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Journal Articles

Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states

Donguk Kim, Tae Jun Yang, Woo Sik Choi, Hee Jun Lee, Jun Tae Jang, Eunryeong Hong, Woo Young Yang, Minwoo Choi, Ki Yeon Yang, Chang Seung Lee, Jiyong Woo, Dae Hwan Kim

Appl. Phys. Lett. 123, 072102 (2023)

https://doi.org/10.1063/5.0153403

Published: August 2023

View article titled, Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states

Journal Articles

Assessment of deep levels with selenium concentration in Cd_1–xZn_xTe_1–ySe_y room temperature detector materials

Joshua W. Kleppinger, Sandeep K. Chaudhuri, Ritwik Nag, Utpal N. Roy, Ralph B. James, Krishna C. Mandal

Appl. Phys. Lett. 123, 062104 (2023)

https://doi.org/10.1063/5.0159519

Published: August 2023

View article titled, Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials

Journal Articles

Second spectrum of charge carrier density fluctuations in graphene due to trapping/detrapping processes

Francesco M. D. Pellegrino, Giuseppe Falci, Elisabetta Paladino

Appl. Phys. Lett. 122, 253102 (2023)

https://doi.org/10.1063/5.0157327

Published: June 2023

View article titled, Second spectrum of charge carrier density fluctuations in graphene due to trapping/detrapping processes

Includes: Supplementary data

Journal Articles

1/f noise of short-channel indium tin oxide transistors under stress

Chengru Gu, Qianlan Hu, Qijun Li, Shenwu Zhu, Jiyang Kang, Yanqing Wu

Appl. Phys. Lett. 122, 252104 (2023)

https://doi.org/10.1063/5.0147577

Published: June 2023

View article titled, 1/f noise of short-channel indium tin oxide transistors under stress

Journal Articles

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiN_x stressor passivation

Chenkai Deng, Wei-Chih Cheng, XiGuang Chen, KangYao Wen, MingHao He, ChuYing Tang, Peiran Wang, Qing Wang, HongYu Yu

Appl. Phys. Lett. 122, 232107 (2023)

https://doi.org/10.1063/5.0135074

Published: June 2023

View article titled, Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation

Journal Articles

Influence of surface adsorption on MoS₂ memtransistor switching kinetics

John M. Cain, Xiaodong Yan, Stephanie E. Liu, Justin H. Qian, Thomas T. Zeng, Vinod K. Sangwan, Mark C. Hersam, Stanley S. Chou, Tzu-Ming Lu

Appl. Phys. Lett. 122, 223502 (2023)

https://doi.org/10.1063/5.0147241

Published: May 2023

View article titled, Influence of surface adsorption on MoS2 memtransistor switching kinetics

Includes: Supplementary data

Journal Articles

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Tian Zhu, Xue-Feng Zheng, Tai-Xu Yin, Hao Zhang, Xiao-Hu Wang, Shao-Zhong Yue, Tan Wang, Tao Han, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 122, 183502 (2023)

https://doi.org/10.1063/5.0146638

Published: May 2023

View article titled, A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Journal Articles

Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al_0.6Ga_0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Hanghai Du, Zhihong Liu, Lu Hao, Guangjie Gao, Weichuan Xing, Weihang Zhang, Yachao Zhang, Hong Zhou, Shenglei Zhao, Jincheng Zhang, Yue Hao

Appl. Phys. Lett. 122, 152107 (2023)

https://doi.org/10.1063/5.0131988

Published: April 2023

View article titled, Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Journal Articles

Polarization enhancement in Hf_0.5Zr_0.5O₂ capacitors induced by oxygen vacancies at elevated temperatures

Zichong Zhang, Chengxu Wang, Yifan Yang, Xiangshui Miao, Xingsheng Wang

Appl. Phys. Lett. 122, 152902 (2023)

https://doi.org/10.1063/5.0137776

Published: April 2023

View article titled, Polarization enhancement in Hf0.5Zr0.5O2 capacitors induced by oxygen vacancies at elevated temperatures

Includes: Supplementary data

Journal Articles

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

Yilin Li, Hui Zhu, Xing Liu, Xiaolei Wang, Hao Xu, Shijie Pan, Jinjuan Xiang, Lixing Zhou, Zhiwen Yao, Yerong Sun, Shiwei Feng

Appl. Phys. Lett. 122, 112905 (2023)

https://doi.org/10.1063/5.0137773

Published: March 2023

View article titled, Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

NARROW

Topics

Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices

Physical insight into the abnormal V_TH instability of Schottky p-GaN HEMTs under high-frequency operation

Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation

Electrochemical control of photoluminescence in pure wurtzite CdSe/CdS core/shell nanocrystals

Study on the single-event burnout mechanism of GaN MMIC power amplifiers

Comprehensive analysis of read-after-write latency in HfZrO_X-based ferroelectric field-effect-transistors with SiO₂ interfacial layer

Capacitance–voltage extraction method for the deep-level defect distribution in organic photodiode

Electrical conduction behavior in ferroelectric polymer-based composites incorporating metal halide perovskite

Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states

Assessment of deep levels with selenium concentration in Cd_1–xZn_xTe_1–ySe_y room temperature detector materials

Second spectrum of charge carrier density fluctuations in graphene due to trapping/detrapping processes

1/f noise of short-channel indium tin oxide transistors under stress

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiN_x stressor passivation

Influence of surface adsorption on MoS₂ memtransistor switching kinetics

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al_0.6Ga_0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Polarization enhancement in Hf_0.5Zr_0.5O₂ capacitors induced by oxygen vacancies at elevated temperatures

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

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