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Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart

Appl. Phys. Lett. 123, 112101 (2023)

https://doi.org/10.1063/5.0159560

Published: September 2023

View article titled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Journal Articles

Gate leakage modeling in lateral β -Ga₂O₃ MOSFETs with Al₂O₃ gate dielectric

Manuel Fregolent, Enrico Brusaterra, Carlo De Santi, Kornelius Tetzner, Joachim Würfl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Appl. Phys. Lett. 123, 103504 (2023)

https://doi.org/10.1063/5.0154878

Published: September 2023

View article titled, Gate leakage modeling in lateral β -Ga2O3 MOSFETs with Al2O3 gate dielectric

Includes: Supplementary data

Journal Articles

Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states

Donguk Kim, Tae Jun Yang, Woo Sik Choi, Hee Jun Lee, Jun Tae Jang, Eunryeong Hong, Woo Young Yang, Minwoo Choi, Ki Yeon Yang, Chang Seung Lee, Jiyong Woo, Dae Hwan Kim

Appl. Phys. Lett. 123, 072102 (2023)

https://doi.org/10.1063/5.0153403

Published: August 2023

View article titled, Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states

Journal Articles

Assessment of deep levels with selenium concentration in Cd_1–xZn_xTe_1–ySe_y room temperature detector materials

Joshua W. Kleppinger, Sandeep K. Chaudhuri, Ritwik Nag, Utpal N. Roy, Ralph B. James, Krishna C. Mandal

Appl. Phys. Lett. 123, 062104 (2023)

https://doi.org/10.1063/5.0159519

Published: August 2023

View article titled, Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials

Journal Articles

Second spectrum of charge carrier density fluctuations in graphene due to trapping/detrapping processes

Francesco M. D. Pellegrino, Giuseppe Falci, Elisabetta Paladino

Appl. Phys. Lett. 122, 253102 (2023)

https://doi.org/10.1063/5.0157327

Published: June 2023

View article titled, Second spectrum of charge carrier density fluctuations in graphene due to trapping/detrapping processes

Includes: Supplementary data

Journal Articles

1/f noise of short-channel indium tin oxide transistors under stress

Chengru Gu, Qianlan Hu, Qijun Li, Shenwu Zhu, Jiyang Kang, Yanqing Wu

Appl. Phys. Lett. 122, 252104 (2023)

https://doi.org/10.1063/5.0147577

Published: June 2023

View article titled, 1/f noise of short-channel indium tin oxide transistors under stress

Journal Articles

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiN_x stressor passivation

Chenkai Deng, Wei-Chih Cheng, XiGuang Chen, KangYao Wen, MingHao He, ChuYing Tang, Peiran Wang, Qing Wang, HongYu Yu

Appl. Phys. Lett. 122, 232107 (2023)

https://doi.org/10.1063/5.0135074

Published: June 2023

View article titled, Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation

Journal Articles

Influence of surface adsorption on MoS₂ memtransistor switching kinetics

John M. Cain, Xiaodong Yan, Stephanie E. Liu, Justin H. Qian, Thomas T. Zeng, Vinod K. Sangwan, Mark C. Hersam, Stanley S. Chou, Tzu-Ming Lu

Appl. Phys. Lett. 122, 223502 (2023)

https://doi.org/10.1063/5.0147241

Published: May 2023

View article titled, Influence of surface adsorption on MoS2 memtransistor switching kinetics

Includes: Supplementary data

Journal Articles

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Tian Zhu, Xue-Feng Zheng, Tai-Xu Yin, Hao Zhang, Xiao-Hu Wang, Shao-Zhong Yue, Tan Wang, Tao Han, Xiao-Hua Ma, Yue Hao

Appl. Phys. Lett. 122, 183502 (2023)

https://doi.org/10.1063/5.0146638

Published: May 2023

View article titled, A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Journal Articles

Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al_0.6Ga_0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Hanghai Du, Zhihong Liu, Lu Hao, Guangjie Gao, Weichuan Xing, Weihang Zhang, Yachao Zhang, Hong Zhou, Shenglei Zhao, Jincheng Zhang, Yue Hao

Appl. Phys. Lett. 122, 152107 (2023)

https://doi.org/10.1063/5.0131988

Published: April 2023

View article titled, Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Journal Articles

Polarization enhancement in Hf_0.5Zr_0.5O₂ capacitors induced by oxygen vacancies at elevated temperatures

Zichong Zhang, Chengxu Wang, Yifan Yang, Xiangshui Miao, Xingsheng Wang

Appl. Phys. Lett. 122, 152902 (2023)

https://doi.org/10.1063/5.0137776

Published: April 2023

View article titled, Polarization enhancement in Hf0.5Zr0.5O2 capacitors induced by oxygen vacancies at elevated temperatures

Includes: Supplementary data

Journal Articles

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

Yilin Li, Hui Zhu, Xing Liu, Xiaolei Wang, Hao Xu, Shijie Pan, Jinjuan Xiang, Lixing Zhou, Zhiwen Yao, Yerong Sun, Shiwei Feng

Appl. Phys. Lett. 122, 112905 (2023)

https://doi.org/10.1063/5.0137773

Published: March 2023

View article titled, Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

Journal Articles

Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress

Xiaohu Wang, Xuefeng Zheng, Baocai Wang, Yingzhe Wang, Shaozhong Yue, Tian Zhu, Wei Mao, Hao Zhang, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 122, 093504 (2023)

https://doi.org/10.1063/5.0132187

Published: February 2023

View article titled, Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress

Journal Articles

Correlation between non-ionizing energy loss and production rate of electron trap at E_C − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Keito Aoshima, Masahiro Horita, Jun Suda

Appl. Phys. Lett. 122, 012106 (2023)

https://doi.org/10.1063/5.0128709

Published: January 2023

View article titled, Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Journal Articles

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte

Appl. Phys. Lett. 121, 233506 (2022)

https://doi.org/10.1063/5.0122097

Published: December 2022

View article titled, Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Includes: Supplementary data

Journal Articles

Tunneling injection to trap-limited space-charge conduction for metal-insulator junction

Cherq Chua, Yee Sin Ang, Lay Kee Ang

Appl. Phys. Lett. 121, 192109 (2022)

https://doi.org/10.1063/5.0124748

Published: November 2022

View article titled, Tunneling injection to trap-limited space-charge conduction for metal-insulator junction

Journal Articles

Links between defect chemistry, conduction, and lifetime in heavily Nb doped lead zirconate titanate films

Betul Akkopru-Akgun, Ke Wang, Susan Trolier-McKinstry

Appl. Phys. Lett. 121, 162903 (2022)

https://doi.org/10.1063/5.0117583

Published: October 2022

View article titled, Links between defect chemistry, conduction, and lifetime in heavily Nb doped lead zirconate titanate films

Includes: Supplementary data

Journal Articles

Investigation of proton irradiation induced E_C-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Pengfei Wan, Weiqi Li, Xiaodong Xu, Yadong Wei, Hao Jiang, Jianqun Yang, Guojian Shao, Gang Lin, Chao Peng, Zhangang Zhang, Xingji Li

Appl. Phys. Lett. 121, 092102 (2022)

https://doi.org/10.1063/5.0103302

Published: August 2022

View article titled, Investigation of proton irradiation induced EC-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Journal Articles

Integrated sub-micron vacuum gaps in semiconductor devices

Peter Oles, Alexander Breymesser, Oliver Blank, Peter Hadley

Appl. Phys. Lett. 121, 062107 (2022)

https://doi.org/10.1063/5.0097043

Published: August 2022

View article titled, Integrated sub-micron vacuum gaps in semiconductor devices

Journal Articles

Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress

Shanjie Li, Peiye Sun, Zhiheng Xing, Nengtao Wu, Wenliang Wang, Guoqiang Li

Appl. Phys. Lett. 121, 062101 (2022)

https://doi.org/10.1063/5.0094957

Published: August 2022

View article titled, Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress

Includes: Supplementary data

NARROW

Topics

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Gate leakage modeling in lateral β -Ga₂O₃ MOSFETs with Al₂O₃ gate dielectric

Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states

Assessment of deep levels with selenium concentration in Cd_1–xZn_xTe_1–ySe_y room temperature detector materials

Second spectrum of charge carrier density fluctuations in graphene due to trapping/detrapping processes

1/f noise of short-channel indium tin oxide transistors under stress

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiN_x stressor passivation

Influence of surface adsorption on MoS₂ memtransistor switching kinetics

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al_0.6Ga_0.4N/GaN-on-Si metal-insulator high electron mobility transistor

Polarization enhancement in Hf_0.5Zr_0.5O₂ capacitors induced by oxygen vacancies at elevated temperatures

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress

Correlation between non-ionizing energy loss and production rate of electron trap at E_C − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Tunneling injection to trap-limited space-charge conduction for metal-insulator junction

Links between defect chemistry, conduction, and lifetime in heavily Nb doped lead zirconate titanate films

Investigation of proton irradiation induced E_C-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Integrated sub-micron vacuum gaps in semiconductor devices

Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress

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