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Journal Articles

GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition

B. G. Hagar, E. L. Routh, M. Abdelhamid, P. C. Colter, J. Muth, S. M. Bedair
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 081105 (2024)
https://doi.org/10.1063/5.0208759
Published: August 2024
View article titled, GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition
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Journal Articles

Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation

Baoqing Zhang, Liuyun Yang, Ding Wang, Kai Cheng, Bowen Sheng, Zhiwen Liang, Ye Yuan, Bo Shen, Xinqiang Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 062104 (2023)
https://doi.org/10.1063/5.0133718
Published: February 2023
View article titled, Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation
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Includes: Supplementary data
Journal Articles

Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon

Baoqing Zhang, Liuyun Yang, Ding Wang, Patrick Quach, Shanshan Sheng, Duo Li, Tao Wang, Bowen Sheng, Tai Li, Jiajia Yang, Ye Yuan, Bo Shen, Xinqiang Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 192107 (2022)
https://doi.org/10.1063/5.0127379
Published: November 2022
View article titled, Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon
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Journal Articles

Interfacial traps and band offset enabled charge separation facilitating current/capacitance hysteresis in dual-oxide layered structure

Editor’s Pick
Cheng-Han Lyu, Rajneesh Chaurasiya, Bo-Ru Lai, Kuan-Ting Chen, Jen-Sue Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 183505 (2022)
https://doi.org/10.1063/5.0122317
Published: November 2022
View article titled, Interfacial traps and band offset enabled charge separation facilitating current/capacitance hysteresis in dual-oxide layered structure
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Includes: Supplementary data
Journal Articles

Joule-heating induced phase transition in 1T-TaS2 near room temperature probed by thermal imaging of power dissipation

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Yaron Jarach, Lior Rodes, Emanuel Ber, Eilam Yalon, Amit Kanigel
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 083502 (2022)
https://doi.org/10.1063/5.0082065
Published: February 2022
View article titled, Joule-heating induced phase transition in 1T-TaS<sub>2</sub> near room temperature probed by thermal imaging of power dissipation
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Includes: Supplementary data
Journal Articles

Voltage-programmable negative differential resistance in memristor of single-crystalline lithium niobate thin film

Jiejun Wang, Xinqiang Pan, Wenbo Luo, Yao Shuai, Huizhong Zeng, Qin Xie, Shitian Huang, Chuangui Wu, Wanli Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 032901 (2022)
https://doi.org/10.1063/5.0070132
Published: January 2022
View article titled, Voltage-programmable negative differential resistance in memristor of single-crystalline lithium niobate thin film
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Includes: Supplementary data
Journal Articles

Direct observation of negative differential resistance in WS2 homojunction

Bo Hsu, Sidra Farid, Justino Almazan, Michael. A. Stroscio, Mitra Dutta
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 063102 (2021)
https://doi.org/10.1063/5.0035413
Published: February 2021
View article titled, Direct observation of negative differential resistance in WS<sub>2</sub> homojunction
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Includes: Supplementary data
Journal Articles

Temperature- and pulse-dependent negative differential resistances in ZnO/Nb:SrTiO3 heterojunctions

Caihong Jia, Yong Ren, Yanfeng Yin, Weifeng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 223503 (2019)
https://doi.org/10.1063/1.5115155
Published: November 2019
View article titled, Temperature- and pulse-dependent negative differential resistances in ZnO/Nb:SrTiO<sub>3</sub> heterojunctions
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Journal Articles

Negative differential resistance and multilevel resistive switching in BaSrTiO3 films

Jing He, Jie Zhu, Changcheng Ma, Jingjing Lu, Zuoqi Hu
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 072101 (2019)
https://doi.org/10.1063/1.5113883
Published: August 2019
View article titled, Negative differential resistance and multilevel resistive switching in BaSrTiO<sub>3</sub> films
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Includes: Supplementary data
Journal Articles

930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

Tyler A. Growden, Evan M. Cornuelle, David F. Storm, Weidong Zhang, Elliott R. Brown, Logan M. Whitaker, Jeffrey W. Daulton, Richard Molnar, David J. Meyer, Paul R. Berger
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 203503 (2019)
https://doi.org/10.1063/1.5095056
Published: May 2019
View article titled, 930 kA/cm<sup>2</sup> peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template
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Journal Articles

Intrinsic limits of leakage current in self-heating-triggered threshold switches

Editor’s Pick
Ziwen Wang, Suhas Kumar, R. Stanley Williams, Yoshio Nishi, H.-S. Philip Wong
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 183501 (2019)
https://doi.org/10.1063/1.5089261
Published: May 2019
View article titled, Intrinsic limits of leakage current in self-heating-triggered threshold switches
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Includes: Supplementary data
Journal Articles

Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire

D. Wang, Z. Y. Chen, T. Wang, L. Y. Yang, B. W. Sheng, H. P. Liu, J. Su, P. Wang, X. Rong, J. Y. Cheng, X. Y. Shi, W. Tan, S. P. Guo, J. Zhang, W. K. Ge, B. Shen, X. Q. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 073503 (2019)
https://doi.org/10.1063/1.5080470
Published: February 2019
View article titled, Repeatable asymmetric resonant tunneling in AlGaN/GaN double barrier structures grown on sapphire
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Journal Articles

Origin of negative resistance in anion migration controlled resistive memory

Writam Banerjee, Facai Wu, Yuan Hu, Quantan Wu, Zuheng Wu, Qi Liu, Ming Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 133108 (2018)
https://doi.org/10.1063/1.5021019
Published: March 2018
View article titled, Origin of negative resistance in anion migration controlled resistive memory
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Journal Articles

Effects of partial substitution of cations on electrical properties of Mn-Co-Ni-O thin films

Fei Zhang, ZhiMing Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 222103 (2017)
https://doi.org/10.1063/1.5004035
Published: November 2017
View article titled, Effects of partial substitution of cations on electrical properties of Mn-Co-Ni-O thin films
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Includes: Supplementary data
Journal Articles

Multi-physics transient simulation of monolithic niobium dioxide-tantalum dioxide memristor-selector structures

John F. Sevic, Nobuhiko P. Kobayashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 153107 (2017)
https://doi.org/10.1063/1.5003168
Published: October 2017
View article titled, Multi-physics transient simulation of monolithic niobium dioxide-tantalum dioxide memristor-selector structures
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Journal Articles

Joining of graphene flakes by low energy N ion beam irradiation

Xin Wu, Haiyan Zhao, Jiayun Pei, Dong Yan
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 133102 (2017)
https://doi.org/10.1063/1.4979166
Published: March 2017
View article titled, Joining of graphene flakes by low energy N ion beam irradiation
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Journal Articles

A niobium oxide-tantalum oxide selector-memristor self-aligned nanostack

Juan J. Diaz Leon, Kate J. Norris, J. Joshua Yang, John F. Sevic, Nobuhiko P. Kobayashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 103102 (2017)
https://doi.org/10.1063/1.4977945
Published: March 2017
View article titled, A niobium oxide-tantalum oxide selector-memristor self-aligned nanostack
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Journal Articles

Electromigration failure mode concerning negative resistance shift of Cu interconnects buried in porous low-k dielectric

Hui Zheng, Binfeng Yin, Hewei Yu, Leigang Chen, Lin Gao, Ke Zhou, Chinte Kuo
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 083502 (2017)
https://doi.org/10.1063/1.4976738
Published: February 2017
View article titled, Electromigration failure mode concerning negative resistance shift of Cu interconnects buried in porous low-<em>k</em> dielectric
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Journal Articles

V3O5: Insulator-metal transition and electric-field-induced resistive-switching

B. Fisher, L. Patlagan, K. B. Chashka, C. Makarov, G. M. Reisner
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 103501 (2016)
https://doi.org/10.1063/1.4962334
Published: September 2016
View article titled, V<sub>3</sub>O<sub>5</sub>: Insulator-metal transition and electric-field-induced resistive-switching
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Includes: Supplementary data
Journal Articles

Memristor and selector devices fabricated from HfO2−xNx

B. J. Murdoch, D. G. McCulloch, R. Ganesan, D. R. McKenzie, M. M. M. Bilek, J. G. Partridge
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 143504 (2016)
https://doi.org/10.1063/1.4945727
Published: April 2016
View article titled, Memristor and selector devices fabricated from HfO<sub>2−x</sub>N<sub>x</sub>
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