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Journal Articles

Effects of atmospheric UV-O₃ exposure of WSe₂ on the properties of the HfO₂/WSe₂ interface

Maria Gabriela Sales, Alexander Mazzoni, Wendy L. Sarney, Asher C. Leff, Justin Pearson, Sina Najmaei, Stephen McDonnell

Appl. Phys. Lett. 123, 123502 (2023)

https://doi.org/10.1063/5.0165599

Published: September 2023

View article titled, Effects of atmospheric UV-O3 exposure of WSe2 on the properties of the HfO2/WSe2 interface

Includes: Supplementary data

Journal Articles

Interface charge engineering on an in situ SiN_x/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

JiaQi He, KangYao Wen, PeiRan Wang, MingHao He, FangZhou Du, Yang Jiang, ChuYing Tang, Nick Tao, Qing Wang, Gang Li, HongYu Yu

Appl. Phys. Lett. 123, 103502 (2023)

https://doi.org/10.1063/5.0169944

Published: September 2023

View article titled, Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

Journal Articles

Excellent passivation of germanium surfaces by PO_x/Al₂O₃ stacks

Roel J. Theeuwes, Wilhelmus J. H. Berghuis, Bart Macco, Wilhelmus M. M. Kessels

Appl. Phys. Lett. 123, 091604 (2023)

https://doi.org/10.1063/5.0164028

Published: August 2023

View article titled, Excellent passivation of germanium surfaces by POx/Al2O3 stacks

Includes: Supplementary data

Journal Articles

Plasma-assisted deposition and characterization of Al₂O₃ dielectric layers on (001) β -Ga₂O₃

Sushovan Dhara, Ashok Dheenan, Nidhin Kurian Kalarickal, Hsien-Lien Huang, Ahmad Ehteshamul Islam, Chandan Joishi, Andreas Fiedler, Joe F. McGlone, Steven A. Ringel, Jinwoo Hwang, Siddharth Rajan

Appl. Phys. Lett. 123, 083504 (2023)

https://doi.org/10.1063/5.0146567

Published: August 2023

View article titled, Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3

Includes: Supplementary data

Journal Articles

Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance

Seung Ho Ryu, Jihoon Jeon, Gwang Min Park, Taikyu Kim, Taeyong Eom, Taek-Mo Chung, In-Hwan Baek, Seong Keun Kim

Appl. Phys. Lett. 123, 073505 (2023)

https://doi.org/10.1063/5.0164727

Published: August 2023

View article titled, Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance

Includes: Supplementary data

Journal Articles

Performance and stability improvement of CVD monolayer MoS₂ transistors through HfO₂ dielectrics engineering

Chunhui Huang, Zeyi Yan, Chengwei Hu, Xiong Xiong, Yanqing Wu

Appl. Phys. Lett. 123, 073503 (2023)

https://doi.org/10.1063/5.0157416

Published: August 2023

View article titled, Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Journal Articles

Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process

Dongsu Kim, Chong-Myeong Song, Su Jin Heo, Goeun Pyo, Dongha Kim, Ji Hwan Lee, Kyung-Ho Park, Shinbuhm Lee, Hyuk-Jun Kwon, Jae Eun Jang

Appl. Phys. Lett. 123, 042904 (2023)

https://doi.org/10.1063/5.0123608

Published: July 2023

View article titled, Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process

Journal Articles

Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS₂ thin films

Emma Coleman, Scott Monaghan, Farzan Gity, Gioele Mirabelli, Ray Duffy, Brendan Sheehan, Shashank Balasubramanyam, Ageeth A. Bol, Paul Hurley

Appl. Phys. Lett. 123, 011901 (2023)

https://doi.org/10.1063/5.0151592

Published: July 2023

View article titled, Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films

Journal Articles

Grass-like alumina enhances transmittance and electrical conductivity of atomic layer deposited Al-doped ZnO for thermoelectric and TCO applications

T. Koskinen, R. Raju, I. Tittonen, C. Kauppinen

Appl. Phys. Lett. 123, 011902 (2023)

https://doi.org/10.1063/5.0146772

Published: July 2023

View article titled, Grass-like alumina enhances transmittance and electrical conductivity of atomic layer deposited Al-doped ZnO for thermoelectric and TCO applications

Includes: Supplementary data

Journal Articles

Engineering inorganic interfaces using molecular nanolayers

Ganpati Ramanath, Collin Rowe, Geetu Sharma, Venkat Venkataramani, Johan G. Alauzun, Ravishankar Sundararaman, Pawel Keblinski, Davide G. Sangiovanni, Per Eklund, Henrik Pedersen

Appl. Phys. Lett. 122, 260502 (2023)

https://doi.org/10.1063/5.0146122

Published: June 2023

View article titled, Engineering inorganic interfaces using molecular nanolayers

Journal Articles

1/f noise of short-channel indium tin oxide transistors under stress

Chengru Gu, Qianlan Hu, Qijun Li, Shenwu Zhu, Jiyang Kang, Yanqing Wu

Appl. Phys. Lett. 122, 252104 (2023)

https://doi.org/10.1063/5.0147577

Published: June 2023

View article titled, 1/f noise of short-channel indium tin oxide transistors under stress

Journal Articles

Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD

Prakash P. Sundaram, Fengdeng Liu, Fikadu Alema, Andrei Osinsky, Bharat Jalan, Steven J. Koester

Appl. Phys. Lett. 122, 232105 (2023)

https://doi.org/10.1063/5.0155622

Published: June 2023

View article titled, Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD

Includes: Supplementary data

Journal Articles

Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrO_x films

Jihoon Jeon, Song-Hyeon Kuk, Ah-Jin Cho, Seung-Hyub Baek, Sang-Hyeon Kim, Seong Keun Kim

Appl. Phys. Lett. 122, 232906 (2023)

https://doi.org/10.1063/5.0152022

Published: June 2023

View article titled, Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films

Journal Articles

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

Liwei Ji, Xue Chen, Xi Su, Jiaxian Wan, Zexin Tu, Hao Wu, Chang Liu

Appl. Phys. Lett. 122, 202105 (2023)

https://doi.org/10.1063/5.0150672

Published: May 2023

View article titled, Influence of indium doping on electrical performance of gallium oxide thin-film transistors

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Topics

Effects of atmospheric UV-O₃ exposure of WSe₂ on the properties of the HfO₂/WSe₂ interface

Interface charge engineering on an in situ SiN_x/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

Excellent passivation of germanium surfaces by PO_x/Al₂O₃ stacks

Plasma-assisted deposition and characterization of Al₂O₃ dielectric layers on (001) β -Ga₂O₃

Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance

Performance and stability improvement of CVD monolayer MoS₂ transistors through HfO₂ dielectrics engineering

Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process

Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS₂ thin films

Grass-like alumina enhances transmittance and electrical conductivity of atomic layer deposited Al-doped ZnO for thermoelectric and TCO applications

Engineering inorganic interfaces using molecular nanolayers

1/f noise of short-channel indium tin oxide transistors under stress

Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD

Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrO_x films

Influence of indium doping on electrical performance of gallium oxide thin-film transistors