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Journal Articles

Temperature-dependent behavior of VO2-based artificial neurons

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Tiancheng Zhao, Yuan Xu, Jiacheng Liu, Xiang Bao, Liu Yuan, Deen Gu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 214103 (2024)
https://doi.org/10.1063/5.0231840
Published: November 2024
View articletitled, Temperature-dependent behavior of VO2-based artificial neurons
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Journal Articles

Inorganic thermoelectric semiconductors with room temperature plasticity

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Yuechu Wang, Chenguang Fu, Xun Shi, Lidong Chen, Tiejun Zhu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 200504 (2024)
https://doi.org/10.1063/5.0233358
Published: November 2024
View articletitled, Inorganic thermoelectric semiconductors with room temperature plasticity
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Journal Articles

Local bandgap narrowing in the forming state of threshold switching materials

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Kenji Shiojima, Hiroki Kawai, Yuto Kawasumi, Hiroshi Takehira, Yuki Wakisaka, Hiroki Imabayashi, Takeshi Iwasaki, Katsuyoshi Komatsu, Tadaomi Daibou
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 023503 (2024)
https://doi.org/10.1063/5.0210996
Published: July 2024
View articletitled, Local bandgap narrowing in the forming state of threshold switching materials
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Journal Articles

Synthesis and resistive switching performance of lead-free double perovskite Cs2AgBiBr6 films

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Fanju Zeng, Yongqian Tan, Wei Hu, Xiaosheng Tang, Haifeng Yin, Tao Jing, Lianshuai Huang, Yi Yang, Juan Liao, Changmin Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 162101 (2024)
https://doi.org/10.1063/5.0199584
Published: April 2024
View articletitled, Synthesis and resistive switching performance of lead-free double perovskite Cs2AgBiBr6 films
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Includes: Supplementary data
Journal Articles

Domain-modified engineering for low-power resistive switching in ferroelectric diodes

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Jianguo Niu, Yaoxiang Jiang, Xiaohui Shi, Donglai Xue, Bo Yang, Shifeng Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 043503 (2024)
https://doi.org/10.1063/5.0187616
Published: January 2024
View articletitled, Domain-modified engineering for low-power resistive switching in ferroelectric diodes
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Includes: Supplementary data
Journal Articles

Improving the selector characteristics of ovonic threshold switch via UV treatment process

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Yoori Seo, Jangseop Lee, Sanghyun Ban, Dongmin Kim, Geonhui Han, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 242103 (2023)
https://doi.org/10.1063/5.0174074
Published: December 2023
View articletitled, Improving the selector characteristics of ovonic threshold switch via UV treatment process
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Journal Articles

Nanoscale imaging of He-ion irradiation effects on amorphous TaO x toward electroforming-free neuromorphic functions

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Olha Popova, Steven J. Randolph, Sabine M. Neumayer, Liangbo Liang, Benjamin Lawrie, Olga S. Ovchinnikova, Robert J. Bondi, Matthew J. Marinella, Bobby G. Sumpter, Petro Maksymovych
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 153503 (2023)
https://doi.org/10.1063/5.0158380
Published: October 2023
View articletitled, Nanoscale imaging of He-ion irradiation effects on amorphous TaO x toward electroforming-free neuromorphic functions
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Journal Articles

Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y2O3 film‐based memristors

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Yuanyuan Zhu, Zicong Guo, Mengyao Chen, Pan Zhang, Peng Shao, Daobin Luo, Youqing Wang, Yong Liu, Rui Xiong, Hongjun Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 083503 (2023)
https://doi.org/10.1063/5.0157680
Published: August 2023
View articletitled, Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y2O3 film‐based memristors
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Includes: Supplementary data
Journal Articles

Resistive switching conducting filament electroformation with an electrothermal phase field method

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John F. Sevic, Nobuhiko P. Kobayashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 083505 (2023)
https://doi.org/10.1063/5.0151532
Published: August 2023
View articletitled, Resistive switching conducting filament electroformation with an electrothermal phase field method
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Journal Articles

Enhancing the sensitivity of photoacoustic spectrum system for liquid detection by coupling with acoustic metasurfaces

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Qinhao Lin, Da Gao, Boao Jin, Yuqi Wang, Yonggang Yin, Shaobo Wang, Junhui Shi
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 242201 (2023)
https://doi.org/10.1063/5.0153453
Published: June 2023
View articletitled, Enhancing the sensitivity of photoacoustic spectrum system for liquid detection by coupling with acoustic metasurfaces
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Includes: Supplementary data
Journal Articles

Real-time study of imaging electron current density on metal filament evolution in SiO2 during in situ TEM

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Saurabh Pandey, Robert Hull
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 213504 (2023)
https://doi.org/10.1063/5.0146248
Published: May 2023
View articletitled, Real-time study of imaging electron current density on metal filament evolution in SiO2 during in situ TEM
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Journal Articles

Multilevel resistive switching in solution-processed CuFe2O4/TiO2 heterostructure

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Priya Kaith, Parul Garg, Ashok Bera
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 133301 (2023)
https://doi.org/10.1063/5.0146126
Published: March 2023
View articletitled, Multilevel resistive switching in solution-processed CuFe2O4/TiO2 heterostructure
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Includes: Supplementary data
Journal Articles

NbO2 selector device with Ge2Sb2Te5 thermal barrier for low off current (300 nA) and low power operation

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Ohhyuk Kwon, Jangseop Lee, Kyumin Lee, Wooseok Choi, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 113502 (2023)
https://doi.org/10.1063/5.0142498
Published: March 2023
View articletitled, NbO2 selector device with Ge2Sb2Te5 thermal barrier for low off current (300 nA) and low power operation
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Journal Articles

Boson peak: Damped phonon in solids

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Q. Guo, H. P. Zhang, Z. Lu, H. Y. Bai, P. Wen, W. H. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 142204 (2022)
https://doi.org/10.1063/5.0103336
Published: October 2022
View articletitled, Boson peak: Damped phonon in solids
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Includes: Supplementary data
Journal Articles

Flexible resistive switching device based on air-stable lead-free Cu3SbI6 perovskite film for nonvolatile memory application

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Yuchan Wang, Yiming Yuan, Wenxia Zhang, Fei Qi, Nan Zhang, Ting Liu, Xiaosheng Tang
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 263503 (2022)
https://doi.org/10.1063/5.0093943
Published: June 2022
View articletitled, Flexible resistive switching device based on air-stable lead-free Cu3SbI6 perovskite film for nonvolatile memory application
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Includes: Supplementary data
Journal Articles

Radiation hardness of InWZnO thin film as resistive switching layer

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Chih-Chieh Hsu, Dun-Bao Ruan, Kuei-Shu Chang Liao, Kai-Jhih Gan, Simon M. Sze, Po-Tsun Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 191605 (2022)
https://doi.org/10.1063/5.0094281
Published: May 2022
View articletitled, Radiation hardness of InWZnO thin film as resistive switching layer
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Includes: Supplementary data
Journal Articles

Gibbs spatial process for characterization of filament interaction in ReRAM devices via photon emission microscopy

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Ernest Wu, Franco Stellari, Leonidas Ocola, Martin Frank, Peilin Song, Takashi Ando
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 132902 (2022)
https://doi.org/10.1063/5.0086202
Published: March 2022
View articletitled, Gibbs spatial process for characterization of filament interaction in ReRAM devices via photon emission microscopy
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Includes: Supplementary data
Journal Articles

Understanding the coexistence of unipolar and bipolar resistive switching in NiFe2O4 resistive memory devices

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Jiacheng Li, Chuangye Yao, Yifu Ke, Wenhua Huang, Santhosh Kumar Thatikonda, Ni Qin, Dinghua Bao
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 133501 (2022)
https://doi.org/10.1063/5.0086415
Published: March 2022
View articletitled, Understanding the coexistence of unipolar and bipolar resistive switching in NiFe2O4 resistive memory devices
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Journal Articles

Resistive switching and photovoltaic response characteristics for the BaTiO3/Nb:SrTiO3 heterostructure

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Yongdan Zhu, Meng Zhao, Yuan Zhang, Teng Zhang, Hai Zhou
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 103504 (2022)
https://doi.org/10.1063/5.0083465
Published: March 2022
View articletitled, Resistive switching and photovoltaic response characteristics for the BaTiO3/Nb:SrTiO3 heterostructure
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Journal Articles

Experimental evidence of the Poisson-like effect for flexural waves in thin metallic plates

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José Sánchez-Dehesa, Penglin Gao, Francisco Cervera, Alberto Broatch, Jorge García-Tíscar, Andrés Felgueroso
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 094102 (2022)
https://doi.org/10.1063/5.0080450
Published: February 2022
View articletitled, Experimental evidence of the Poisson-like effect for flexural waves in thin metallic plates
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Includes: Supplementary data