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Journal Articles

Biaxial strain tuning of exciton energy and polarization in monolayer WS₂

G. Kourmoulakis, A. Michail, I. Paradisanos, X. Marie, M. M. Glazov, B. Jorissen, L. Covaci, E. Stratakis, K. Papagelis, J. Parthenios, G. Kioseoglou

Appl. Phys. Lett. 123, 223103 (2023)

https://doi.org/10.1063/5.0167724

Published: November 2023

View article titled, Biaxial strain tuning of exciton energy and polarization in monolayer WS2

Includes: Supplementary data

Journal Articles

Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Yi Chao Chow, Tanay Tak, Feng Wu, Jacob Ewing, Shuji Nakamura, Steven P. DenBaars, Yuh-Renn Wu, Claude Weisbuch, James S. Speck

Appl. Phys. Lett. 123, 091103 (2023)

https://doi.org/10.1063/5.0167779

Published: August 2023

View article titled, Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Includes: Supplementary data

Journal Articles

Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nanoneedles

Pratim K. Saha, Kanchan Singh Rana, Navneet Thakur, Bazila Parvez, Shazan Ahmad Bhat, Swaroop Ganguly, Dipankar Saha

Appl. Phys. Lett. 121, 211101 (2022)

https://doi.org/10.1063/5.0111026

Published: November 2022

View article titled, Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nanoneedles

Includes: Supplementary data

Journal Articles

Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS₂ produced by gold-assisted exfoliation

S. E. Panasci, E. Schilirò, F. Migliore, M. Cannas, F. M. Gelardi, F. Roccaforte, F. Giannazzo, S. Agnello

Appl. Phys. Lett. 119, 093103 (2021)

https://doi.org/10.1063/5.0062106

Published: August 2021

View article titled, Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation

Journal Articles

Micro-PL analysis of high current density resonant tunneling diodes for THz applications

M. Cito, D. Cimbri, D. Childs, R. Baba, B. A. Harrison, A. Watt, T. Mukai, E. Wasige, R. A. Hogg

Appl. Phys. Lett. 119, 072102 (2021)

https://doi.org/10.1063/5.0059339

Published: August 2021

View article titled, Micro-PL analysis of high current density resonant tunneling diodes for THz applications

Journal Articles

Quantum efficiency and oscillator strength of InGaAs quantum dots for single-photon sources emitting in the telecommunication O-band

Jan Große, Paweł Mrowiński, Nicole Srocka, Stephan Reitzenstein

Appl. Phys. Lett. 119, 061103 (2021)

https://doi.org/10.1063/5.0059458

Published: August 2021

View article titled, Quantum efficiency and oscillator strength of InGaAs quantum dots for single-photon sources emitting in the telecommunication O-band

Includes: Supplementary data

Journal Articles

Revealing the many-body interactions and valley-polarization behavior in Re-doped MoS₂ monolayers

Xiaoli Zhu, Siting Ding, Lihui Li, Ying Jiang, Biyuan Zheng, Xingxia Sun, Zheyuan Xu, Wenxia You, Huawei Liu, Delang Liang, Haipeng Zhao, Junyu Qu, Weihao Zheng, Dong Li, Anlian Pan

Appl. Phys. Lett. 118, 113101 (2021)

https://doi.org/10.1063/5.0045916

Published: March 2021

View article titled, Revealing the many-body interactions and valley-polarization behavior in Re-doped MoS2 monolayers

Includes: Supplementary data

Journal Articles

Optical signatures of type I–type II band alignment transition in Cd(Se,Te)/ZnTe self-assembled quantum dots

Piotr Baranowski, Małgorzata Szymura, Grzegorz Karczewski, Marta Aleszkiewicz, Aleksander Rodek, Tomasz Kazimierczuk, Piotr Kossacki, Tomasz Wojtowicz, Jacek Kossut, Piotr Wojnar

Appl. Phys. Lett. 117, 113101 (2020)

https://doi.org/10.1063/5.0016326

Published: September 2020

View article titled, Optical signatures of type I–type II band alignment transition in Cd(Se,Te)/ZnTe self-assembled quantum dots

Includes: Supplementary data

Journal Articles

Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy

Daniel Ruhstorfer, Simon Mejia, Manfred Ramsteiner, Markus Döblinger, Hubert Riedl, Jonathan J. Finley, Gregor Koblmüller

Appl. Phys. Lett. 116, 052101 (2020)

https://doi.org/10.1063/1.5134687

Published: February 2020

View article titled, Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy

Journal Articles

Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations

V. S. Krivobok, S. I. Chentsov, S. N. Nikolaev, M. A. Chernopitssky, E. E. Onishchenko, A. A. Pruchkina, V. P. Martovitskiy, V. S. Bagaev, D. G. Ikusov, D. V. Marin, N. N. Mikhailov, M. V. Yakushev

Appl. Phys. Lett. 115, 232102 (2019)

https://doi.org/10.1063/1.5127259

Published: December 2019

View article titled, Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations

Includes: Supplementary data

Journal Articles

Spectral diffusion time scales in InGaN/GaN quantum dots

Kang Gao, Helen Springbett, Tongtong Zhu, Rachel A. Oliver, Yasuhiko Arakawa, Mark J. Holmes

Appl. Phys. Lett. 114, 112109 (2019)

https://doi.org/10.1063/1.5088205

Published: March 2019

View article titled, Spectral diffusion time scales in InGaN/GaN quantum dots

Journal Articles

Density control of GaN quantum dots on AlN single crystal

Sebastian Tamariz, Gordon Callsen, Nicolas Grandjean

Appl. Phys. Lett. 114, 082101 (2019)

https://doi.org/10.1063/1.5083018

Published: February 2019

View article titled, Density control of GaN quantum dots on AlN single crystal

Includes: Supplementary data

Journal Articles

Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 µ m

Ł. Dusanowski, M. Gawełczyk, J. Misiewicz, S. Höfling, J. P. Reithmaier, G. Sęk

Appl. Phys. Lett. 113, 043103 (2018)

https://doi.org/10.1063/1.5030895

Published: July 2018

View article titled, Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 µ m

Journal Articles

GaAs/GaNAs core-multishell nanowires with nitrogen composition exceeding 2%

M. Yukimune, R. Fujiwara, H. Ikeda, K. Yano, K. Takada, M. Jansson, W. M. Chen, I. A. Buyanova, F. Ishikawa

Appl. Phys. Lett. 113, 011901 (2018)

https://doi.org/10.1063/1.5029388

Published: July 2018

View article titled, GaAs/GaNAs core-multishell nanowires with nitrogen composition exceeding 2%

Journal Articles

Telecom wavelength single quantum dots with very small excitonic fine-structure splitting

Andrei Kors, Johann Peter Reithmaier, Mohamed Benyoucef

Appl. Phys. Lett. 112, 172102 (2018)

https://doi.org/10.1063/1.5023184

Published: April 2018

View article titled, Telecom wavelength single quantum dots with very small excitonic fine-structure splitting

Journal Articles

Exciton diffusion in WSe₂ monolayers embedded in a van der Waals heterostructure

F. Cadiz, C. Robert, E. Courtade, M. Manca, L. Martinelli, T. Taniguchi, K. Watanabe, T. Amand, A. C. H. Rowe, D. Paget, B. Urbaszek, X. Marie

Appl. Phys. Lett. 112, 152106 (2018)

https://doi.org/10.1063/1.5026478

Published: April 2018

View article titled, Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure

Journal Articles

Exciton-phonon coupling in a CsPbBr₃ single nanocrystal

Julien Ramade, Léon Marcel Andriambariarijaona, Violette Steinmetz, Nicolas Goubet, Laurent Legrand, Thierry Barisien, Frédérick Bernardot, Christophe Testelin, Emmanuel Lhuillier, Alberto Bramati, Maria Chamarro

Appl. Phys. Lett. 112, 072104 (2018)

https://doi.org/10.1063/1.5018413

Published: February 2018

View article titled, Exciton-phonon coupling in a CsPbBr3 single nanocrystal

Journal Articles

Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot

Antoine Reigue, Aristide Lemaître, Carmen Gomez Carbonell, Christian Ulysse, Kamel Merghem, Stéphane Guilet, Richard Hostein, Valia Voliotis

Appl. Phys. Lett. 112, 073103 (2018)

https://doi.org/10.1063/1.5010757

Published: February 2018

View article titled, Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot

Journal Articles

Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics

Ł. Dusanowski, P. Mrowiński, M. Syperek, J. Misiewicz, A. Somers, S. Höfling, J. P. Reithmaier, G. Sęk

Appl. Phys. Lett. 111, 253106 (2017)

https://doi.org/10.1063/1.5005971

Published: December 2017

View article titled, Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics

Journal Articles

Multi-excitonic emission from Stranski-Krastanov GaN/AlN quantum dots inside a nanoscale tip

L. Mancini, F. Moyon, J. Houard, I. Blum, W. Lefebvre, F. Vurpillot, A. Das, E. Monroy, L. Rigutti

Appl. Phys. Lett. 111, 243102 (2017)

https://doi.org/10.1063/1.5004417

Published: December 2017

View article titled, Multi-excitonic emission from Stranski-Krastanov GaN/AlN quantum dots inside a nanoscale tip

Includes: Supplementary data

NARROW

Topics

Biaxial strain tuning of exciton energy and polarization in monolayer WS₂

Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Room temperature single-photon emission from InGaN quantum dot ordered arrays in GaN nanoneedles

Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS₂ produced by gold-assisted exfoliation

Micro-PL analysis of high current density resonant tunneling diodes for THz applications

Quantum efficiency and oscillator strength of InGaAs quantum dots for single-photon sources emitting in the telecommunication O-band

Revealing the many-body interactions and valley-polarization behavior in Re-doped MoS₂ monolayers

Optical signatures of type I–type II band alignment transition in Cd(Se,Te)/ZnTe self-assembled quantum dots

Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy

Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations

Spectral diffusion time scales in InGaN/GaN quantum dots

Density control of GaN quantum dots on AlN single crystal

Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 µ m

GaAs/GaNAs core-multishell nanowires with nitrogen composition exceeding 2%

Telecom wavelength single quantum dots with very small excitonic fine-structure splitting

Exciton diffusion in WSe₂ monolayers embedded in a van der Waals heterostructure

Exciton-phonon coupling in a CsPbBr₃ single nanocrystal

Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot

Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics

Multi-excitonic emission from Stranski-Krastanov GaN/AlN quantum dots inside a nanoscale tip

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