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Journal Articles

Hyperdoping of germanium with argon toward strain-doping-induced indirect-to-direct bandgap transition in Ge

Li He, Shu-Yu Wen, Yuan-Hao Zhu, Shao-Teng Wu, Jun-Wei Luo
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 052104 (2024)
https://doi.org/10.1063/5.0217459
Published: July 2024
View article titled, Hyperdoping of germanium with argon toward strain-doping-induced indirect-to-direct bandgap transition in Ge
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Journal Articles

Impact of post-ion implantation annealing on Se-hyperdoped Ge

Xiaolong Liu, Patrick McKearney, Sören Schäfer, Behrad Radfar, Yonder Berencén, Ulrich Kentsch, Ville Vähänissi, Shengqiang Zhou, Stefan Kontermann, Hele Savin
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 042102 (2024)
https://doi.org/10.1063/5.0213637
Published: July 2024
View article titled, Impact of post-ion implantation annealing on Se-hyperdoped Ge
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Journal Articles

A multi-electrode two-dimensional position sensitive diamond detector

S. Ditalia Tchernij, D. Siciliano, G. Provatas, J. Forneris, F. Picollo, M. Campostrini, V. Rigato, Z. Siketic, M. Jaksic, E. Vittone
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 223502 (2024)
https://doi.org/10.1063/5.0205621
Published: May 2024
View article titled, A multi-electrode two-dimensional position sensitive diamond detector
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Journal Articles

Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures

Hangning Shi, Jiaxin Ding, Qingcheng Qin, Ailun Yi, Jialiang Sun, Tadatomo Suga, Juemin Yi, Jianfeng Wang, Ke Xu, Min Zhou, Kai Huang, Tiangui You, Xin Ou
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 192103 (2024)
https://doi.org/10.1063/5.0188656
Published: May 2024
View article titled, Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures
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Journal Articles

Deposition of high entropy alloy sub-surface films on metal substrates via DC magnetron sputtering with a CoCrFeMnNi target

Daisuke Tanada, Stephen M. Lyth, Kazuhiro Ishikawa, Yoji Miyajima
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 151903 (2024)
https://doi.org/10.1063/5.0201180
Published: April 2024
View article titled, Deposition of high entropy alloy sub-surface films on metal substrates via DC magnetron sputtering with a CoCrFeMnNi target
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Journal Articles

Hot ion implantation to create dense NV center ensembles in diamond

Midrel Wilfried Ngandeu Ngambou, Pauline Perrin, Ionut Balasa, Alexey Tiranov, Ovidiu Brinza, Fabien Bénédic, Justine Renaud, Morgan Reveillard, Jérémie Silvent, Philippe Goldner, Jocelyn Achard, Alexandre Tallaire
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 134002 (2024)
https://doi.org/10.1063/5.0196719
Published: March 2024
View article titled, Hot ion implantation to create dense NV center ensembles in diamond
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Journal Articles

Fabrication of quantum emitters in aluminum nitride by Al-ion implantation and thermal annealing

E. Nieto Hernández, H. B. Yağcı, V. Pugliese, P. Aprà, J. K. Cannon, S. G. Bishop, J. Hadden, S. Ditalia Tchernij, P. Olivero, A. J. Bennett, J. Forneris
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 124003 (2024)
https://doi.org/10.1063/5.0185534
Published: March 2024
View article titled, Fabrication of quantum emitters in aluminum nitride by Al-ion implantation and thermal annealing
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Journal Articles

Creation of color centers in diamond by recoil implantation through dielectric films

Yuyang Han, Christian Pederson, Bethany E. Matthews, Nicholas S. Yama, Maxwell F. Parsons, Kai-Mei C. Fu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 044007 (2024)
https://doi.org/10.1063/5.0183421
Published: January 2024
View article titled, Creation of color centers in diamond by recoil implantation through dielectric films
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Includes: Supplementary data
Journal Articles

Publisher's Note: “Resistance switching stability of STO memristor under Au ion implantation” [Appl. Phys. Lett. 124 , 013505 (2024)]

Hai-Lian Li, Jie Su, Ming-Hui Xu, Shi-Jie Dong, Jing Bian, Peng-Shun Shan, Ruo-Wei Wang, Yong Liu, Xue-Lin Wang, Shuang-Qing Fan, Ming-Hui Cao, Tong Liu, Ting Xu, Wei-Jin Kong, Tao Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 039904 (2024)
https://doi.org/10.1063/5.0195995
Published: January 2024
View article titled, Publisher's Note: “Resistance switching stability of STO memristor under Au ion implantation” [Appl. Phys. Lett. 124 , 013505 (2024)]
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Journal Articles

Enhancing damping-like efficiency by low-energy mixed ions bombardment

Sabpreet Bhatti, Subhakanta Das, Abdillah Shaik, Jianpeng Chan, Yew Seng Kay, Shengyao Li, S. N. Piramanayagam
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 022407 (2024)
https://doi.org/10.1063/5.0178084
Published: January 2024
View article titled, Enhancing damping-like efficiency by low-energy mixed ions bombardment
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Includes: Supplementary data
Journal Articles

Field-free magnetic switching dependence on lateral interfaces in synthetic antiferromagnets by ion implantation

Bowen Shen, Meiyin Yang, Yanru Li, Peiyue Yu, Jianfeng Gao, Baoshan Cui, Guoqiang Yu, Jun Luo
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 012401 (2024)
https://doi.org/10.1063/5.0174124
Published: January 2024
View article titled, Field-free magnetic switching dependence on lateral interfaces in synthetic antiferromagnets by ion implantation
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Includes: Supplementary data
Journal Articles

Electrical properties of silicon-implanted β-Ga2O3:Fe crystals

Alena Nikolskaya, Alexander Revin, Dmitry Korolev, Alexey Mikhaylov, Vladimir Trushin, Alexey Kudrin, Anton Zdoroveyshchev, Daniil Zdoroveyshchev, Pavel Yunin, Mikhail Drozdov, Anton Konakov, David Tetelbaum
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 211901 (2023)
https://doi.org/10.1063/5.0174490
Published: November 2023
View article titled, Electrical properties of silicon-implanted β-Ga<sub>2</sub>O<sub>3</sub>:Fe crystals
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Journal Articles

Feasibility of room temperature detection of low energy single ions using nanometer-thick graphite

Johannes Küpper, Jan Meijer, Pablo D. Esquinazi
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 173502 (2023)
https://doi.org/10.1063/5.0165210
Published: October 2023
View article titled, Feasibility of room temperature detection of low energy single ions using nanometer-thick graphite
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Includes: Supplementary data
Journal Articles

Tailoring optical nonlinearities of thin-film lithium niobate via encapsulating plasmonic nanoparticles

Xiaoli Sun, Wenqing Sun, Yi Liu, Feng Ren, Yuechen Jia, Feng Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 141901 (2023)
https://doi.org/10.1063/5.0167003
Published: October 2023
View article titled, Tailoring optical nonlinearities of thin-film lithium niobate via encapsulating plasmonic nanoparticles
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Journal Articles

Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices

Sudipto Saha, Lingyu Meng, A. F. M. Anhar Uddin Bhuiyan, Ankit Sharma, Chinmoy Nath Saha, Hongping Zhao, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 132105 (2023)
https://doi.org/10.1063/5.0155882
Published: September 2023
View article titled, Electrical characteristics of <em>in situ</em> Mg-doped β-Ga<sub>2</sub>O<sub>3</sub> current-blocking layer for vertical devices
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Includes: Supplementary data
Journal Articles

Superconductivity in laser-annealed monocrystalline silicon films: The role of boron implant

P. Dumas, M. Opprecht, S. Kerdilès, J. Lábár, B. Pécz, F. Lefloch, F. Nemouchi
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 132602 (2023)
https://doi.org/10.1063/5.0166870
Published: September 2023
View article titled, Superconductivity in laser-annealed monocrystalline silicon films: The role of boron implant
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Journal Articles

Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes

Hoon Jeong, Minkyu Cho, Zhiyu Xu, Frank Mehnke, Nepomuk Otte, Shyh-Chiang Shen, Theeradetch Detchprohm, Russell D. Dupuis
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 121107 (2023)
https://doi.org/10.1063/5.0161953
Published: September 2023
View article titled, Ion-implanted Al<sub>0.6</sub>Ga<sub>0.4</sub>N deep-ultraviolet avalanche photodiodes
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Journal Articles

Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

Shuyu Wen, Mohd Saif Shaikh, Oliver Steuer, Slawomir Prucnal, Jörg Grenzer, René Hübner, Marcin Turek, Krzysztof Pyszniak, Sebastian Reiter, Inga Anita Fischer, Yordan M. Georgiev, Manfred Helm, Shaoteng Wu, Jun-Wei Luo, Shengqiang Zhou, Yonder Berencén
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 081109 (2023)
https://doi.org/10.1063/5.0166799
Published: August 2023
View article titled, Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques
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Includes: Supplementary data
Journal Articles

Design, fabrication, and characterization of picowell arrays on cyclic olefin copolymer surfaces generated with a 10.5 MeV N4+ ion microbeam

I. Bányász, I. Rajta, V. Havránek, A. Mackova, A. J. Laki, M. S. Z. Kellermayer, Z. Szittner, S. Kurunczi, Sz. Novák, I. Székács, R. Horváth, M. Fried, G. U. L. Nagy
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 053701 (2023)
https://doi.org/10.1063/5.0155681
Published: July 2023
View article titled, Design, fabrication, and characterization of picowell arrays on cyclic olefin copolymer surfaces generated with a 10.5 MeV N<sup>4+</sup> ion microbeam
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Journal Articles

RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks

Zidong Cai, Xuelin Yang, Zhaohua Shen, Cheng Ma, Zhenghao Chen, Danshuo Liu, Fujun Xu, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 042102 (2023)
https://doi.org/10.1063/5.0156496
Published: July 2023
View article titled, RF loss reduction by a carbon-regulated Si substrate engineering in GaN-based HEMT buffer stacks
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Includes: Supplementary data