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Journal Articles

Removal of hydrogen by electric and polarized fields for high-performance AlGaN deep-ultraviolet-C light emitting diodes

Weiqing Tang, Libin Guo, Nan Qiao, Zhiming Wu, Yaping Wu

Appl. Phys. Lett. 125, 222101 (2024)

https://doi.org/10.1063/5.0240920

Published: November 2024

View article titled, Removal of hydrogen by electric and polarized fields for high-performance AlGaN deep-ultraviolet-C light emitting diodes

Journal Articles

Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs

Yulian Yin, Xiaoyu Liu, Xi Tang, Xuan Xie, Huan Wang, Changhui Zhao, Shu Yang

Appl. Phys. Lett. 125, 173506 (2024)

https://doi.org/10.1063/5.0231294

Published: October 2024

View article titled, Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs

Journal Articles

Tunable luminous color of LEDs achieved through integrating reliable multilevel RRAM

Meng Qi, Liu Yang, Tao Sun, Runze Xu, Ziyu Lv, Ye Zhou, Su-Ting Han

Appl. Phys. Lett. 125, 143506 (2024)

https://doi.org/10.1063/5.0226980

Published: October 2024

View article titled, Tunable luminous color of LEDs achieved through integrating reliable multilevel RRAM

Journal Articles

Degradation of electrical properties of subcells in multi-junction solar cells under neutron irradiation

Svetlana A. Levina, Viktor M. Emelyanov, Mariia V. Nakhimovich, Maxim Z. Shvarts

Appl. Phys. Lett. 125, 132105 (2024)

https://doi.org/10.1063/5.0218485

Published: September 2024

View article titled, Degradation of electrical properties of subcells in multi-junction solar cells under neutron irradiation

Journal Articles

Erratum: “Relationship between charge transfer state electroluminescence and the degradation of organic photovoltaics” [Appl. Phys. Lett. 118 , 063301 (2021)]

Claire Arneson, Xinjing Huang, Xiaheng Huang, Dejiu Fan, Mengyuan Gao, Long Ye, Harald Ade, Yongxi Li, Stephen R. Forrest

Appl. Phys. Lett. 125, 129901 (2024)

https://doi.org/10.1063/5.0237612

Published: September 2024

View article titled, Erratum: “Relationship between charge transfer state electroluminescence and the degradation of organic photovoltaics” [Appl. Phys. Lett. 118 , 063301 (2021)]

Journal Articles

High EQE of 43.76% in solution-processed OLEDs operating at a wavelength of 626 nm

Jingtao Zhang, Mengge Wu, Ding Zheng, Juan Zhao, Junsheng Yu

Appl. Phys. Lett. 125, 121102 (2024)

https://doi.org/10.1063/5.0225786

Published: September 2024

View article titled, High EQE of 43.76% in solution-processed OLEDs operating at a wavelength of 626 nm

Journal Articles

Inverted V-shaped size-dependent emission wavelength shift in InGaN micro-LEDs with size down to 1 μm

Bo Liu, Chenyang Sun, Luming Yu, Zhibiao Hao, Yi Luo, Changzheng Sun, Bing Xiong, Yanjun Han, Jian Wang, Hongtao Li, Lin Gan, Lai Wang

Appl. Phys. Lett. 125, 091103 (2024)

https://doi.org/10.1063/5.0221292

Published: August 2024

View article titled, Inverted V-shaped size-dependent emission wavelength shift in InGaN micro-LEDs with size down to 1 μm

Journal Articles

High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process

Teng Sun, Yuhao Wang, Junnan Han, Jiaming Chen, Ting Zhu, Dongke Li, Wei Li, Jun Xu, Kunji Chen

Appl. Phys. Lett. 125, 031105 (2024)

https://doi.org/10.1063/5.0211513

Published: July 2024

View article titled, High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process

Journal Articles

Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

Yanghu Peng, Hui Guo, Ruiling Gong, Huaize Liu, Pengfei Shao, Na Sun, Fangfang Ren, Jiandong Ye, Youdou Zheng, Hai Lu, Rong Zhang, Dunjun Chen

Appl. Phys. Lett. 124, 173504 (2024)

https://doi.org/10.1063/5.0201650

Published: April 2024

View article titled, Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

Journal Articles

High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact

Yimeng Sang, Zhe Zhuang, Kun Xing, Dongqi Zhang, Jinjian Yan, Zhuoying Jiang, Chenxue Li, Kai Chen, Yu Ding, Tao Tao, Daisuke Iida, Ke Wang, Cheng Li, Kai Huang, Kazuhiro Ohkawa, Rong Zhang, Bin Liu

Appl. Phys. Lett. 124, 142103 (2024)

https://doi.org/10.1063/5.0190000

Published: April 2024

View article titled, High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact

Journal Articles

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Shivali Agrawal, Len van Deurzen, Jimy Encomendero, Joseph E. Dill, Hsin Wei (Sheena) Huang, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena

Appl. Phys. Lett. 124, 102109 (2024)

https://doi.org/10.1063/5.0189419

Published: March 2024

View article titled, Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Journal Articles

Enhancement of light emission of a low-resistivity silicon nanocrystal thin film: A simulational and experimental study

Fengyang Ma, Jian Zhou, Kaixin Liu, Zhongyao Yan, Xiyuan Dai, Li Wu, Liang Yu, Jian Sun, Song-You Wang, Ming Lu

Appl. Phys. Lett. 124, 061101 (2024)

https://doi.org/10.1063/5.0191000

Published: February 2024

View article titled, Enhancement of light emission of a low-resistivity silicon nanocrystal thin film: A simulational and experimental study

Includes: Supplementary data

Journal Articles

SiV center electroluminescence in high current density diamond p-i-n diode

M. A. Lobaev, D. B. Radishev, A. L. Vikharev, A. M. Gorbachev, S. A. Bogdanov, V. A. Isaev, S. A. Kraev, A. I. Okhapkin, E. A. Arhipova, E. V. Demidov, M. N. Drozdov

Appl. Phys. Lett. 123, 251116 (2023)

https://doi.org/10.1063/5.0178908

Published: December 2023

View article titled, SiV center electroluminescence in high current density diamond p-i-n diode

Includes: Supplementary data

Journal Articles

1530-nm electroluminescence from p-Ga₂S₃:Er/n⁺-Si heterojunctions induced by Zener tunneling

Lei Wang, Xiaohong Ji, Qinyuan Zhang

Appl. Phys. Lett. 123, 251115 (2023)

https://doi.org/10.1063/5.0178408

Published: December 2023

View article titled, 1530-nm electroluminescence from p-Ga2S3:Er/n+-Si heterojunctions induced by Zener tunneling

Includes: Supplementary data

Journal Articles

10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN

Michael Wang, Feng Wu, Yifan Yao, Christian Zollner, Michael Iza, Michael Lam, Steven P. DenBaars, Shuji Nakamura, James S. Speck

Appl. Phys. Lett. 123, 231101 (2023)

https://doi.org/10.1063/5.0165328

Published: December 2023

View article titled, 10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN

Includes: Supplementary data

Journal Articles

Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs

Akira Yoshikawa, Ziyi Zhang, Maki Kushimoto, Koji Aoto, Chiaki Sasaoka, Hiroshi Amano

Appl. Phys. Lett. 123, 221105 (2023)

https://doi.org/10.1063/5.0183320

Published: November 2023

View article titled, Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs

Journal Articles

Electrically driven light emission from single quantum dots using pulsed MOS capacitors

Vivian Wang, Qing Lin, Ali Javey

Appl. Phys. Lett. 123, 131108 (2023)

https://doi.org/10.1063/5.0161775

Published: September 2023

View article titled, Electrically driven light emission from single quantum dots using pulsed MOS capacitors

Includes: Supplementary data

Journal Articles

Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Yi Chao Chow, Tanay Tak, Feng Wu, Jacob Ewing, Shuji Nakamura, Steven P. DenBaars, Yuh-Renn Wu, Claude Weisbuch, James S. Speck

Appl. Phys. Lett. 123, 091103 (2023)

https://doi.org/10.1063/5.0167779

Published: August 2023

View article titled, Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Includes: Supplementary data

Journal Articles

Enhancing performance of blue ZnTeSe-based quantum dot light-emitting diodes through dual dipole layers engineering

Qiuyan Li, Sheng Cao, Yuhe Bi, Peng Yu, Ke Xing, Yusheng Song, Zhentao Du, Bingsuo Zou, Jialong Zhao

Appl. Phys. Lett. 123, 063302 (2023)

https://doi.org/10.1063/5.0155001

Published: August 2023

View article titled, Enhancing performance of blue ZnTeSe-based quantum dot light-emitting diodes through dual dipole layers engineering

Includes: Supplementary data

Journal Articles

Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence

Xuefeng Li, Nick Pant, Elizabeth DeJong, Abdelrahman Tarief Elshafiey, Rob Armitage, Emmanouil Kioupakis, Daniel Feezell

Appl. Phys. Lett. 122, 212108 (2023)

https://doi.org/10.1063/5.0151301

Published: May 2023

View article titled, Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence

Includes: Supplementary data

NARROW

Topics

Removal of hydrogen by electric and polarized fields for high-performance AlGaN deep-ultraviolet-C light emitting diodes

Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs

Tunable luminous color of LEDs achieved through integrating reliable multilevel RRAM

Degradation of electrical properties of subcells in multi-junction solar cells under neutron irradiation

Erratum: “Relationship between charge transfer state electroluminescence and the degradation of organic photovoltaics” [Appl. Phys. Lett. 118 , 063301 (2021)]

High EQE of 43.76% in solution-processed OLEDs operating at a wavelength of 626 nm

Inverted V-shaped size-dependent emission wavelength shift in InGaN micro-LEDs with size down to 1 μm

High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process

Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Enhancement of light emission of a low-resistivity silicon nanocrystal thin film: A simulational and experimental study

SiV center electroluminescence in high current density diamond p-i-n diode

1530-nm electroluminescence from p-Ga₂S₃:Er/n⁺-Si heterojunctions induced by Zener tunneling

10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN

Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs

Electrically driven light emission from single quantum dots using pulsed MOS capacitors

Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Enhancing performance of blue ZnTeSe-based quantum dot light-emitting diodes through dual dipole layers engineering

Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence

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