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Journal Articles

Temperature-dependent behavior of VO₂-based artificial neurons

Tiancheng Zhao, Yuan Xu, Jiacheng Liu, Xiang Bao, Liu Yuan, Deen Gu

Appl. Phys. Lett. 125, 214103 (2024)

https://doi.org/10.1063/5.0231840

Published: November 2024

View article titled, Temperature-dependent behavior of VO2-based artificial neurons

Journal Articles

Synthesis and resistive switching performance of lead-free double perovskite Cs₂AgBiBr₆ films

Fanju Zeng, Yongqian Tan, Wei Hu, Xiaosheng Tang, Haifeng Yin, Tao Jing, Lianshuai Huang, Yi Yang, Juan Liao, Changmin Zhou

Appl. Phys. Lett. 124, 162101 (2024)

https://doi.org/10.1063/5.0199584

Published: April 2024

View article titled, Synthesis and resistive switching performance of lead-free double perovskite Cs2AgBiBr6 films

Includes: Supplementary data

Journal Articles

Domain-modified engineering for low-power resistive switching in ferroelectric diodes

Jianguo Niu, Yaoxiang Jiang, Xiaohui Shi, Donglai Xue, Bo Yang, Shifeng Zhao

Appl. Phys. Lett. 124, 043503 (2024)

https://doi.org/10.1063/5.0187616

Published: January 2024

View article titled, Domain-modified engineering for low-power resistive switching in ferroelectric diodes

Includes: Supplementary data

Journal Articles

Nanoscale imaging of He-ion irradiation effects on amorphous TaO x toward electroforming-free neuromorphic functions

Olha Popova, Steven J. Randolph, Sabine M. Neumayer, Liangbo Liang, Benjamin Lawrie, Olga S. Ovchinnikova, Robert J. Bondi, Matthew J. Marinella, Bobby G. Sumpter, Petro Maksymovych

Appl. Phys. Lett. 123, 153503 (2023)

https://doi.org/10.1063/5.0158380

Published: October 2023

View article titled, Nanoscale imaging of He-ion irradiation effects on amorphous TaO x toward electroforming-free neuromorphic functions

Journal Articles

Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y₂O₃ film‐based memristors

Yuanyuan Zhu, Zicong Guo, Mengyao Chen, Pan Zhang, Peng Shao, Daobin Luo, Youqing Wang, Yong Liu, Rui Xiong, Hongjun Wang

Appl. Phys. Lett. 123, 083503 (2023)

https://doi.org/10.1063/5.0157680

Published: August 2023

View article titled, Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y2O3 film‐based memristors

Includes: Supplementary data

Journal Articles

Resistive switching conducting filament electroformation with an electrothermal phase field method

John F. Sevic, Nobuhiko P. Kobayashi

Appl. Phys. Lett. 123, 083505 (2023)

https://doi.org/10.1063/5.0151532

Published: August 2023

View article titled, Resistive switching conducting filament electroformation with an electrothermal phase field method

Journal Articles

Real-time study of imaging electron current density on metal filament evolution in SiO₂ during in situ TEM

Saurabh Pandey, Robert Hull

Appl. Phys. Lett. 122, 213504 (2023)

https://doi.org/10.1063/5.0146248

Published: May 2023

View article titled, Real-time study of imaging electron current density on metal filament evolution in SiO2 during in situ TEM

Journal Articles

Multilevel resistive switching in solution-processed CuFe₂O₄/TiO₂ heterostructure

Priya Kaith, Parul Garg, Ashok Bera

Appl. Phys. Lett. 122, 133301 (2023)

https://doi.org/10.1063/5.0146126

Published: March 2023

View article titled, Multilevel resistive switching in solution-processed CuFe2O4/TiO2 heterostructure

Includes: Supplementary data

Journal Articles

Flexible resistive switching device based on air-stable lead-free Cu₃SbI₆ perovskite film for nonvolatile memory application

Yuchan Wang, Yiming Yuan, Wenxia Zhang, Fei Qi, Nan Zhang, Ting Liu, Xiaosheng Tang

Appl. Phys. Lett. 120, 263503 (2022)

https://doi.org/10.1063/5.0093943

Published: June 2022

View article titled, Flexible resistive switching device based on air-stable lead-free Cu3SbI6 perovskite film for nonvolatile memory application

Includes: Supplementary data

Journal Articles

Understanding the coexistence of unipolar and bipolar resistive switching in NiFe₂O₄ resistive memory devices

Jiacheng Li, Chuangye Yao, Yifu Ke, Wenhua Huang, Santhosh Kumar Thatikonda, Ni Qin, Dinghua Bao

Appl. Phys. Lett. 120, 133501 (2022)

https://doi.org/10.1063/5.0086415

Published: March 2022

View article titled, Understanding the coexistence of unipolar and bipolar resistive switching in NiFe2O4 resistive memory devices

Journal Articles

Multilevel switching in Mg-doped HfO_x memristor through the mutual-ion effect

Li-Heng Li, Kan-Hao Xue, Lan-Qing Zou, Jun-Hui Yuan, Huajun Sun, Xiangshui Miao

Appl. Phys. Lett. 119, 153505 (2021)

https://doi.org/10.1063/5.0065840

Published: October 2021

View article titled, Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect

Includes: Supplementary data

Journal Articles

Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory

Qiaoling Tian, Xiaoning Zhao, Xiaohan Zhang, Huai Lin, Di Wang, Guozhong Xing, Zhongqiang Wang, Ya Lin, Haiyang Xu, Yichun Liu

Appl. Phys. Lett. 119, 143505 (2021)

https://doi.org/10.1063/5.0065658

Published: October 2021

View article titled, Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory

Includes: Supplementary data

Journal Articles

Complementary study of anisotropic ion conduction in (110)-oriented Ca-doped BiFeO₃ films using electrochromism and impedance spectroscopy

Jeonghun Suh, Ji Soo Lim, Heung-Sik Park, Chan-Ho Yang

Appl. Phys. Lett. 119, 022902 (2021)

https://doi.org/10.1063/5.0054895

Published: July 2021

View article titled, Complementary study of anisotropic ion conduction in (110)-oriented Ca-doped BiFeO3 films using electrochromism and impedance spectroscopy

Includes: Supplementary data

Journal Articles

Voltage controlled awakening of memristor-like dynamic current–voltage loops of ferroelectric triglycine sulfate

Nicholas V. Morozovsky

Appl. Phys. Lett. 118, 192902 (2021)

https://doi.org/10.1063/5.0048356

Published: May 2021

View article titled, Voltage controlled awakening of memristor-like dynamic current–voltage loops of ferroelectric triglycine sulfate

Journal Articles

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Aftab Saleem, Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Sailesh Rajasekaran, Tseung-Yuen Tseng, Themis Prodromakis

Appl. Phys. Lett. 118, 112103 (2021)

https://doi.org/10.1063/5.0041808

Published: March 2021

View article titled, Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Journal Articles

The resistance of Cu nanowire–nanowire junctions and electro-optical modeling of Cu nanowire networks

Hugh G. Manning, Patrick F. Flowers, Mutya A. Cruz, Claudia Gomes da Rocha, Colin O' Callaghan, Mauro S. Ferreira, Benjamin J. Wiley, John J. Boland

Appl. Phys. Lett. 116, 251902 (2020)

https://doi.org/10.1063/5.0012005

Published: June 2020

View article titled, The resistance of Cu nanowire–nanowire junctions and electro-optical modeling of Cu nanowire networks

Includes: Supplementary data

Journal Articles

Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices

J. López-Vidrier, J. L. Frieiro, O. Blázquez, D. Yazicioglu, S. Gutsch, K. E. González-Flores, M. Zacharias, S. Hernández, B. Garrido

Appl. Phys. Lett. 116, 193503 (2020)

https://doi.org/10.1063/5.0005069

Published: May 2020

View article titled, Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices

Journal Articles

Light-activated electroforming in ITO/ZnO/p-Si resistive switching devices

O. Blázquez, J. L. Frieiro, J. López-Vidrier, C. Guillaume, X. Portier, C. Labbé, S. Hernández, B. Garrido

Appl. Phys. Lett. 115, 261104 (2019)

https://doi.org/10.1063/1.5125844

Published: December 2019

View article titled, Light-activated electroforming in ITO/ZnO/p-Si resistive switching devices

Journal Articles

Biodegradable transient resistive random-access memory based on MoO₃/MgO/MoO₃ stack

Sheng Li Fang, Wei Hua Liu, Xin Li, Xiao Li Wang, Li Geng, Min Shun Wu, Xiao Dong Huang, Chuan Yu Han

Appl. Phys. Lett. 115, 244102 (2019)

https://doi.org/10.1063/1.5129542

Published: December 2019

View article titled, Biodegradable transient resistive random-access memory based on MoO3/MgO/MoO3 stack

Journal Articles

Field-induced nucleation switching in binary ovonic threshold switches

Sangmin Lee, Jongmyung Yoo, Jaehyuk Park, Hyunsang Hwang

Appl. Phys. Lett. 115, 233503 (2019)

https://doi.org/10.1063/1.5126913

Published: December 2019

View article titled, Field-induced nucleation switching in binary ovonic threshold switches

NARROW

Topics

Temperature-dependent behavior of VO₂-based artificial neurons

Synthesis and resistive switching performance of lead-free double perovskite Cs₂AgBiBr₆ films

Domain-modified engineering for low-power resistive switching in ferroelectric diodes

Nanoscale imaging of He-ion irradiation effects on amorphous TaO x toward electroforming-free neuromorphic functions

Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y₂O₃ film‐based memristors

Resistive switching conducting filament electroformation with an electrothermal phase field method

Real-time study of imaging electron current density on metal filament evolution in SiO₂ during in situ TEM

Multilevel resistive switching in solution-processed CuFe₂O₄/TiO₂ heterostructure

Flexible resistive switching device based on air-stable lead-free Cu₃SbI₆ perovskite film for nonvolatile memory application

Understanding the coexistence of unipolar and bipolar resistive switching in NiFe₂O₄ resistive memory devices

Multilevel switching in Mg-doped HfO_x memristor through the mutual-ion effect

Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory

Complementary study of anisotropic ion conduction in (110)-oriented Ca-doped BiFeO₃ films using electrochromism and impedance spectroscopy

Voltage controlled awakening of memristor-like dynamic current–voltage loops of ferroelectric triglycine sulfate

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

The resistance of Cu nanowire–nanowire junctions and electro-optical modeling of Cu nanowire networks

Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices

Light-activated electroforming in ITO/ZnO/p-Si resistive switching devices

Biodegradable transient resistive random-access memory based on MoO₃/MgO/MoO₃ stack

Field-induced nucleation switching in binary ovonic threshold switches

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