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Journal Articles

Study on the electrical performance degradation mechanism of β -Ga₂O₃ p-n diode under heavy ion radiation

Shaozhong Yue, Xuefeng Zheng, Fang Zhang, Danmei Lin, Sijie Bu, Yingzhe Wang, Peipei Hu, Jie Liu, Weidong Zhang, Jianfu Zhang, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 125, 112101 (2024)

https://doi.org/10.1063/5.0229345

Published: September 2024

View article titled, Study on the electrical performance degradation mechanism of β -Ga2O3 p-n diode under heavy ion radiation

Journal Articles

Separated striations in n-type Czochralski silicon solar cells

Guixiu Li, Shuai Yuan, Shenglang Zhou, Yihua Wu, Hongrong Chen, Huali Zhang, Chen Wang, Lei Wang, Xuegong Yu, Deren Yang

Appl. Phys. Lett. 124, 252103 (2024)

https://doi.org/10.1063/5.0204270

Published: June 2024

View article titled, Separated striations in n-type Czochralski silicon solar cells

Journal Articles

Fe_Ga (0/−) acceptor level as a reference energy level in dilute Al_xGa_1−xN

P. Kruszewski, J. Plesiewicz, Sz. Grzanka, E. Grzanka, P. Prystawko, V. P. Markevich, A. R. Peaker, L. Sun, C. A. Dawe, M. P. Halsall

Appl. Phys. Lett. 124, 232103 (2024)

https://doi.org/10.1063/5.0209022

Published: June 2024

View article titled, FeGa (0/−) acceptor level as a reference energy level in dilute AlxGa1−xN

Journal Articles

Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga₂O₃ p–n diode

Shaozhong Yue, Yingzhe Wang, Xuefeng Zheng, Ailing Pan, Yuehua Hong, Xiaohu Wang, Sunyan Gong, Tian Zhu, Fang Zhang, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 124, 122105 (2024)

https://doi.org/10.1063/5.0201929

Published: March 2024

View article titled, Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga2O3 p–n diode

Includes: Supplementary data

Journal Articles

Alloy splitting of the Fe_Ga acceptor level in dilute Al_xGa_1−xN

P. Kruszewski, V. P. Markevich, A. R. Peaker, J. Plesiewicz, P. Prystawko, M. P. Halsall, L. Sun

Appl. Phys. Lett. 123, 222105 (2023)

https://doi.org/10.1063/5.0184701

Published: November 2023

View article titled, Alloy splitting of the FeGa acceptor level in dilute AlxGa1−xN

Journal Articles

UV/DUV light emitters

Asif Khan, Michael Kneissl, Hiroshi Amano

Appl. Phys. Lett. 123, 120401 (2023)

https://doi.org/10.1063/5.0174270

Published: September 2023

View article titled, UV/DUV light emitters

Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart

Appl. Phys. Lett. 123, 112101 (2023)

https://doi.org/10.1063/5.0159560

Published: September 2023

View article titled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Journal Articles

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan, Lili Huo

Appl. Phys. Lett. 123, 092105 (2023)

https://doi.org/10.1063/5.0147392

Published: September 2023

View article titled, Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

Journal Articles

Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113 , 192106 (2018)]

Darshana Wickramaratne, Cyrus E. Dreyer, Bartomeu Monserrat, Jimmy-Xuan Shen, John L. Lyons, Audrius Alkauskas, Chris. G. Van de Walle

Appl. Phys. Lett. 123, 079901 (2023)

https://doi.org/10.1063/5.0169548

Published: August 2023

View article titled, Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113 , 192106 (2018)]

Journal Articles

Assessment of deep levels with selenium concentration in Cd_1–xZn_xTe_1–ySe_y room temperature detector materials

Joshua W. Kleppinger, Sandeep K. Chaudhuri, Ritwik Nag, Utpal N. Roy, Ralph B. James, Krishna C. Mandal

Appl. Phys. Lett. 123, 062104 (2023)

https://doi.org/10.1063/5.0159519

Published: August 2023

View article titled, Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials

Journal Articles

Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)

H. Tetzner, W. Seifert, O. Skibitzki, Y. Yamamoto, M. Lisker, M. M. Mirza, I. A. Fischer, D. J. Paul, Monica De Seta, G. Capellini

Appl. Phys. Lett. 122, 243503 (2023)

https://doi.org/10.1063/5.0152962

Published: June 2023

View article titled, Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)

Journal Articles

Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress

Xiaohu Wang, Xuefeng Zheng, Baocai Wang, Yingzhe Wang, Shaozhong Yue, Tian Zhu, Wei Mao, Hao Zhang, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 122, 093504 (2023)

https://doi.org/10.1063/5.0132187

Published: February 2023

View article titled, Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress

Journal Articles

Correlation between non-ionizing energy loss and production rate of electron trap at E_C − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Keito Aoshima, Masahiro Horita, Jun Suda

Appl. Phys. Lett. 122, 012106 (2023)

https://doi.org/10.1063/5.0128709

Published: January 2023

View article titled, Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Journal Articles

Erratum: “Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects” [Appl. Phys. Lett. 121 , 162902 (2022)]

Kuan-Ting Ho, Daniel Monteiro Diniz Reis, Karla Hiller

Appl. Phys. Lett. 121, 209901 (2022)

https://doi.org/10.1063/5.0132795

Published: November 2022

View article titled, Erratum: “Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects” [Appl. Phys. Lett. 121 , 162902 (2022)]

Journal Articles

Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects

Kuan-Ting Ho, Daniel Monteiro Diniz Reis, Karla Hiller

Appl. Phys. Lett. 121, 162902 (2022)

https://doi.org/10.1063/5.0106382

Published: October 2022

View article titled, Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects

Includes: Supplementary data

Journal Articles

Investigation of proton irradiation induced E_C-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Pengfei Wan, Weiqi Li, Xiaodong Xu, Yadong Wei, Hao Jiang, Jianqun Yang, Guojian Shao, Gang Lin, Chao Peng, Zhangang Zhang, Xingji Li

Appl. Phys. Lett. 121, 092102 (2022)

https://doi.org/10.1063/5.0103302

Published: August 2022

View article titled, Investigation of proton irradiation induced EC-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Journal Articles

Enhancement of radiation detection performance with reduction of EH_6/7 deep levels in n-type 4H–SiC through thermal oxidation

OmerFaruk Karadavut, Sandeep K. Chaudhuri, Joshua W. Kleppinger, Ritwik Nag, Krishna C. Mandal

Appl. Phys. Lett. 121, 012103 (2022)

https://doi.org/10.1063/5.0089236

Published: July 2022

View article titled, Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation

Journal Articles

M-center in low-energy electron irradiated 4H-SiC

T. Knežević, A. Hadžipašić, T. Ohshima, T. Makino, I. Capan

Appl. Phys. Lett. 120, 252101 (2022)

https://doi.org/10.1063/5.0095827

Published: June 2022

View article titled, M-center in low-energy electron irradiated 4H-SiC

Journal Articles

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Jiaxiang Chen, Wei Huang, Haolan Qu, Yu Zhang, Jianjun Zhou, Baile Chen, Xinbo Zou

Appl. Phys. Lett. 120, 212105 (2022)

https://doi.org/10.1063/5.0083362

Published: May 2022

View article titled, Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Includes: Supplementary data

Journal Articles

Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN

Meguru Endo, Masahiro Horita, Jun Suda

Appl. Phys. Lett. 120, 142104 (2022)

https://doi.org/10.1063/5.0086535

Published: April 2022

View article titled, Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN

NARROW

Topics

Study on the electrical performance degradation mechanism of β -Ga₂O₃ p-n diode under heavy ion radiation

Separated striations in n-type Czochralski silicon solar cells

Fe_Ga (0/−) acceptor level as a reference energy level in dilute Al_xGa_1−xN

Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga₂O₃ p–n diode

Alloy splitting of the Fe_Ga acceptor level in dilute Al_xGa_1−xN

UV/DUV light emitters

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113 , 192106 (2018)]

Assessment of deep levels with selenium concentration in Cd_1–xZn_xTe_1–ySe_y room temperature detector materials

Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)

Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress

Correlation between non-ionizing energy loss and production rate of electron trap at E_C − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Erratum: “Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects” [Appl. Phys. Lett. 121 , 162902 (2022)]

Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects

Investigation of proton irradiation induced E_C-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Enhancement of radiation detection performance with reduction of EH_6/7 deep levels in n-type 4H–SiC through thermal oxidation

M-center in low-energy electron irradiated 4H-SiC

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN

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