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Journal Articles

UV/DUV light emitters

Asif Khan, Michael Kneissl, Hiroshi Amano

Appl. Phys. Lett. 123, 120401 (2023)

https://doi.org/10.1063/5.0174270

Published: September 2023

View article titled, UV/DUV light emitters

Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart

Appl. Phys. Lett. 123, 112101 (2023)

https://doi.org/10.1063/5.0159560

Published: September 2023

View article titled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Journal Articles

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan, Lili Huo

Appl. Phys. Lett. 123, 092105 (2023)

https://doi.org/10.1063/5.0147392

Published: September 2023

View article titled, Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

Journal Articles

Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113 , 192106 (2018)]

Darshana Wickramaratne, Cyrus E. Dreyer, Bartomeu Monserrat, Jimmy-Xuan Shen, John L. Lyons, Audrius Alkauskas, Chris. G. Van de Walle

Appl. Phys. Lett. 123, 079901 (2023)

https://doi.org/10.1063/5.0169548

Published: August 2023

View article titled, Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113 , 192106 (2018)]

Journal Articles

Assessment of deep levels with selenium concentration in Cd_1–xZn_xTe_1–ySe_y room temperature detector materials

Joshua W. Kleppinger, Sandeep K. Chaudhuri, Ritwik Nag, Utpal N. Roy, Ralph B. James, Krishna C. Mandal

Appl. Phys. Lett. 123, 062104 (2023)

https://doi.org/10.1063/5.0159519

Published: August 2023

View article titled, Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials

Journal Articles

Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)

H. Tetzner, W. Seifert, O. Skibitzki, Y. Yamamoto, M. Lisker, M. M. Mirza, I. A. Fischer, D. J. Paul, Monica De Seta, G. Capellini

Appl. Phys. Lett. 122, 243503 (2023)

https://doi.org/10.1063/5.0152962

Published: June 2023

View article titled, Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)

Journal Articles

Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress

Xiaohu Wang, Xuefeng Zheng, Baocai Wang, Yingzhe Wang, Shaozhong Yue, Tian Zhu, Wei Mao, Hao Zhang, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 122, 093504 (2023)

https://doi.org/10.1063/5.0132187

Published: February 2023

View article titled, Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress

Journal Articles

Correlation between non-ionizing energy loss and production rate of electron trap at E_C − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Keito Aoshima, Masahiro Horita, Jun Suda

Appl. Phys. Lett. 122, 012106 (2023)

https://doi.org/10.1063/5.0128709

Published: January 2023

View article titled, Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Journal Articles

Erratum: “Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects” [Appl. Phys. Lett. 121 , 162902 (2022)]

Kuan-Ting Ho, Daniel Monteiro Diniz Reis, Karla Hiller

Appl. Phys. Lett. 121, 209901 (2022)

https://doi.org/10.1063/5.0132795

Published: November 2022

View article titled, Erratum: “Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects” [Appl. Phys. Lett. 121 , 162902 (2022)]

Journal Articles

Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects

Kuan-Ting Ho, Daniel Monteiro Diniz Reis, Karla Hiller

Appl. Phys. Lett. 121, 162902 (2022)

https://doi.org/10.1063/5.0106382

Published: October 2022

View article titled, Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects

Includes: Supplementary data

Journal Articles

Investigation of proton irradiation induced E_C-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Pengfei Wan, Weiqi Li, Xiaodong Xu, Yadong Wei, Hao Jiang, Jianqun Yang, Guojian Shao, Gang Lin, Chao Peng, Zhangang Zhang, Xingji Li

Appl. Phys. Lett. 121, 092102 (2022)

https://doi.org/10.1063/5.0103302

Published: August 2022

View article titled, Investigation of proton irradiation induced EC-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Journal Articles

Enhancement of radiation detection performance with reduction of EH_6/7 deep levels in n-type 4H–SiC through thermal oxidation

OmerFaruk Karadavut, Sandeep K. Chaudhuri, Joshua W. Kleppinger, Ritwik Nag, Krishna C. Mandal

Appl. Phys. Lett. 121, 012103 (2022)

https://doi.org/10.1063/5.0089236

Published: July 2022

View article titled, Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation

Journal Articles

M-center in low-energy electron irradiated 4H-SiC

T. Knežević, A. Hadžipašić, T. Ohshima, T. Makino, I. Capan

Appl. Phys. Lett. 120, 252101 (2022)

https://doi.org/10.1063/5.0095827

Published: June 2022

View article titled, M-center in low-energy electron irradiated 4H-SiC

Journal Articles

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Jiaxiang Chen, Wei Huang, Haolan Qu, Yu Zhang, Jianjun Zhou, Baile Chen, Xinbo Zou

Appl. Phys. Lett. 120, 212105 (2022)

https://doi.org/10.1063/5.0083362

Published: May 2022

View article titled, Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Includes: Supplementary data

Journal Articles

Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN

Meguru Endo, Masahiro Horita, Jun Suda

Appl. Phys. Lett. 120, 142104 (2022)

https://doi.org/10.1063/5.0086535

Published: April 2022

View article titled, Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN

Journal Articles

Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy

S. DasGupta, O. Slobodyan, T. Smith, A. Binder, J. Flicker, R. Kaplar, J. Mueller, L. Garcia Rodriguez, S. Atcitty

Appl. Phys. Lett. 120, 053502 (2022)

https://doi.org/10.1063/5.0082257

Published: January 2022

View article titled, Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy

Journal Articles

Identification of bulk and interface state-induced threshold voltage instability in metal/SiN_x(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Yixu Yao, Qimeng Jiang, Sen Huang, Xinhua Wang, Xiaorong Luo, Hao Jin, Fuqiang Guo, Haibo Yin, Jingyuan Shi, Haojie Jiang, Junfeng Li, Wenwu Wang, Bo Shen, Ke Wei, Xinyu Liu

Appl. Phys. Lett. 119, 233502 (2021)

https://doi.org/10.1063/5.0078367

Published: December 2021

View article titled, Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Journal Articles

Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors

Joshua W. Kleppinger, Sandeep K. Chaudhuri, OmerFaruk Karadavut, Krishna C. Mandal

Appl. Phys. Lett. 119, 063502 (2021)

https://doi.org/10.1063/5.0064036

Published: August 2021

View article titled, Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors

Journal Articles

Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers

Takeshi Kimura (木村健司), Taichiro Konno (今野泰一郎), Hajime Fujikura (藤倉序章)

Appl. Phys. Lett. 118, 182104 (2021)

https://doi.org/10.1063/5.0051692

Published: May 2021

View article titled, Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers

Journal Articles

Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

Fuqiang Guo, Sen Huang, Xinhua Wang, Tiantian Luan, Wen Shi, Kexin Deng, Jie Fan, Haibo Yin, Jingyuan Shi, Fengwen Mu, Ke Wei, Xinyu Liu

Appl. Phys. Lett. 118, 093503 (2021)

https://doi.org/10.1063/5.0041421

Published: March 2021

View article titled, Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

NARROW

Topics

UV/DUV light emitters

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113 , 192106 (2018)]

Assessment of deep levels with selenium concentration in Cd_1–xZn_xTe_1–ySe_y room temperature detector materials

Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)

Investigation on the threshold voltage instability mechanism of p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress

Correlation between non-ionizing energy loss and production rate of electron trap at E_C − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Erratum: “Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects” [Appl. Phys. Lett. 121 , 162902 (2022)]

Resistance degradation in sputtered sodium potassium niobate thin films and its relationship to point defects

Investigation of proton irradiation induced E_C-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Enhancement of radiation detection performance with reduction of EH_6/7 deep levels in n-type 4H–SiC through thermal oxidation

M-center in low-energy electron irradiated 4H-SiC

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN

Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy

Identification of bulk and interface state-induced threshold voltage instability in metal/SiN_x(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors

Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers

Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

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