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Journal Articles

Van der Waals epitaxy of GeSn quantum dots on MoS2 enabled by oxygen-plasma pretreatment

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Xiaowei Shentu, Rui Wang, Weinan Zheng, Chengyuan Yang, Haokun Ding, Songsong Wu, Jinhui Qian, Guangyang Lin, Songyan Chen, Wei Huang, Cheng Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 262105 (2025)
https://doi.org/10.1063/5.0269760
Published: July 2025
View articletitled, Van der Waals epitaxy of GeSn quantum dots on MoS2 enabled by oxygen-plasma pretreatment
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Journal Articles

Hydrophilic direct bonding of (100) diamond and deposited SiO2 substrates

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Tianyin Chen, Jeffrel Hermias, Salahuddin Nur, Ryoichi Ishihara
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 231901 (2025)
https://doi.org/10.1063/5.0263008
Published: June 2025
View articletitled, Hydrophilic direct bonding of (100) diamond and deposited SiO2 substrates
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Journal Articles

Diameter scaling limit of catalytic silicon nanowires confined by optimized ultrafine sidewall grooves

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Mingyu Xie, Wentao Qian, Junzhuan Wang, Linwei Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 223103 (2025)
https://doi.org/10.1063/5.0260135
Published: June 2025
View articletitled, Diameter scaling limit of catalytic silicon nanowires confined by optimized ultrafine sidewall grooves
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Journal Articles

Oxygen plasma and post-annealing assisted surface oxidation for high-Vth E-mode p-GaN HEMTs

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Mao Jia, Bin Hou, Ling Yang, Zhiqiang Xue, Meng Zhang, Mei Wu, Hao Lu, Xitong Hong, Jiale Du, Qian Xiao, Lixin Guo, Xuefeng Zheng, Xiaohua Ma, Yue Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 212101 (2025)
https://doi.org/10.1063/5.0269738
Published: May 2025
View articletitled, Oxygen plasma and post-annealing assisted surface oxidation for high-Vth E-mode p-GaN HEMTs
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Journal Articles

Oxygen migration impact on ferroelectric evolution in Hf0.5Zr0.5O2 devices

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Chih-Yu Teng, Chia-Wei Hsu, Chia-Hua Chang, Jheng-Lin Yang, Bi-Hsuan Lin, Mau-Tsu Tang, Yuan-Chieh Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193502 (2025)
https://doi.org/10.1063/5.0266238
Published: May 2025
View articletitled, Oxygen migration impact on ferroelectric evolution in Hf0.5Zr0.5O2 devices
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Journal Articles

Oxygen plasma induced improvement of contact resistance and mobility of tellurium field-effect transistor

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Jinwei Hu, Bosen Wang, Xingyun Li, Ming Yuwen, Bo Zhang, Lianying Zhu, Jun Xu, Deyi Fu, Rong Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193101 (2025)
https://doi.org/10.1063/5.0260965
Published: May 2025
View articletitled, Oxygen plasma induced improvement of contact resistance and mobility of tellurium field-effect transistor
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Journal Articles

Interface quality improvement of metal/AlOxNy/AlGaN/GaN MIS-heterojunction by using alternative AlOxNy growth in PEALD system

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Junmin Xue, Yu Li, Juan Xin, Yang Xiao, Heng Wang, Yujie Peng, Chen Wang, Zengyuan Wu, Qinqin Jing, Yaming Fan, Lihang Yin, Xiaodong Zhang, Yong Cai
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 181602 (2025)
https://doi.org/10.1063/5.0256227
Published: May 2025
View articletitled, Interface quality improvement of metal/AlOxNy/AlGaN/GaN MIS-heterojunction by using alternative AlOxNy growth in PEALD system
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Journal Articles

Low-damage dry etching process of Sc-Sb-Te phase-change memory film using a chlorine-based reactive atmosphere

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Yongyong Che, Mingjian Zhong, Jianbin Liu, Keyuan Ding, Hao Liu, Jiatao Xie, Qianqian Qin, Minglong Liu, Peixu Liu, Xiaoyan Wei, Xiaotian Zhu, Peijiang Cao, Feng Rao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 182102 (2025)
https://doi.org/10.1063/5.0256478
Published: May 2025
View articletitled, Low-damage dry etching process of Sc-Sb-Te phase-change memory film using a chlorine-based reactive atmosphere
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Journal Articles

Stabilization of III-nitrides at high temperatures using nitrogen plasma

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Dillon Moher, Reilly Shanahan, Elijah Thimsen
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 151903 (2025)
https://doi.org/10.1063/5.0257926
Published: April 2025
View articletitled, Stabilization of III-nitrides at high temperatures using nitrogen plasma
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Journal Articles

High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation

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J. He, Z. Cheng, S. Xie, C. Mi, X. Wu, L. Zhang, Y. Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 143507 (2025)
https://doi.org/10.1063/5.0260480
Published: April 2025
View articletitled, High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation
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Journal Articles

Investigation of plasma etch damage in GaN on commercially available substrates by Raman spectroscopy

Open Access
Owen R. Meilander, Haley E. Dishman, Swarnim Neema, Mona A. Ebrish
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 132101 (2025)
https://doi.org/10.1063/5.0260960
Published: March 2025
View articletitled, Investigation of plasma etch damage in GaN on commercially available substrates by Raman spectroscopy
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Journal Articles

Complementary logic-in-memory inverters integrating n-channel and p-channel ferroelectric organic transistors

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Haitian Wei, Yijie Lin, Zhenxiang Yan, Wenfa Xie, Wei Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 083301 (2025)
https://doi.org/10.1063/5.0245757
Published: February 2025
View articletitled, Complementary logic-in-memory inverters integrating n-channel and p-channel ferroelectric organic transistors
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Journal Articles

Topographically selective atomic layer deposition within trenches enabled by an amorphous carbon inhibition layer

Open Access
Thijs Janssen, Lodewijk J. P. Vossen, Marcel A. Verheijen, Wilhelmus M. M. Kessels, Adriaan J. M. Mackus
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 063505 (2025)
https://doi.org/10.1063/5.0246311
Published: February 2025
View articletitled, Topographically selective atomic layer deposition within trenches enabled by an amorphous carbon inhibition layer
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Journal Articles

Plasma-induced optically active defects in hexagonal boron nitride

Open Access
F. Schaumburg, D. Plitt, T. Wagner, N. Wöhrl, M. Geller, G. Prinz, A. Lorke
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 043103 (2025)
https://doi.org/10.1063/5.0253028
Published: January 2025
View articletitled, Plasma-induced optically active defects in hexagonal boron nitride
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Journal Articles

Cryogenic cyclical etching of Si using CF4 plasma passivation steps: The role of CF radicals

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Jack Nos, Sylvain Iséni, Martin Kogelschatz, Gilles Cunge, Philippe Lefaucheux, Rémi Dussart, Thomas Tillocher, Émilie Despiau-Pujo
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 031602 (2025)
https://doi.org/10.1063/5.0245217
Published: January 2025
View articletitled, Cryogenic cyclical etching of Si using CF4 plasma passivation steps: The role of CF radicals
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Journal Articles

A dual-biomimetic surface with leaf-skeleton-based hierarchical structures for efficient atmospheric water harvesting

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Qiyu Chen, Fabian Javier Medina, Qing Hao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 011603 (2025)
https://doi.org/10.1063/5.0235697
Published: January 2025
View articletitled, A dual-biomimetic surface with leaf-skeleton-based hierarchical structures for efficient atmospheric water harvesting
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Journal Articles

Optical microscopy-based bridging method to quantify roughness-dependent adhesion of ZnS nanobelts on silicon substrates in air

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Noman Akhtar, Xiaodong Song, Ruizhe Liu, Muhammad Asif, James L. Mead, Lizhen Hou, Shiliang Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 251601 (2024)
https://doi.org/10.1063/5.0236929
Published: December 2024
View articletitled, Optical microscopy-based bridging method to quantify roughness-dependent adhesion of ZnS nanobelts on silicon substrates in air
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Journal Articles

Pulsed N2 plasma surface treatment for AlGaN/GaN HEMTs prior to PECVD SiNx passivation to reduce plasma damage

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Kaiyu Wang, Ke Wei, Ruizhe Zhang, Sheng Zhang, Jiaqi Guo, Xiaoqiang He, Jianchao Wang, Sen Huang, Yingkui Zheng, Xiaojuan Chen, Xinhua Wang, Xinyu Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 213506 (2024)
https://doi.org/10.1063/5.0235740
Published: November 2024
View articletitled, Pulsed N2 plasma surface treatment for AlGaN/GaN HEMTs prior to PECVD SiNx passivation to reduce plasma damage
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Journal Articles

Improvement of charge trapping memory performance by modulating band alignment with oxygen plasma

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Puhao Chai, Jun Zhu, Kuangkuang Li, Jiale Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 173901 (2024)
https://doi.org/10.1063/5.0224220
Published: October 2024
View articletitled, Improvement of charge trapping memory performance by modulating band alignment with oxygen plasma
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Journal Articles

Effect of O radicals on aramid surface treatment: Experimental and molecular insights

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Hao-ou Ruan, Hao Du, Takahiro Umemoto, Ryo Ono, Daisuke Katase, Akiko Kumada, Masahiro Sato
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 171602 (2024)
https://doi.org/10.1063/5.0237844
Published: October 2024
View articletitled, Effect of O radicals on aramid surface treatment: Experimental and molecular insights
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