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Journal Articles

Extended T2 times of shallow implanted NV in chemically mechanically polished diamond

Open Access
S. Tyler, J. Newland, P. Hepworth, A. Wijesekara, I. R. Gullick, M. L. Markham, M. E. Newton, B. L. Green
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 054001 (2025)
https://doi.org/10.1063/5.0244913
Published: February 2025
View articletitled, Extended T2 times of shallow implanted NV in chemically mechanically polished diamond
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Journal Articles

Oxygen-close-packed (310)-plane substrates of β-Ga2O3 grown by the casting method

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Yuchao Yan, Xu Gao, Da Liu, Huifan Xiong, Yingying Liu, Keke Ma, Dan Wu, Jiabin Wang, Yan Wang, Ning Xia, Tianqi Deng, Zhu Jin, Hui Zhang, Deren Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 102101 (2024)
https://doi.org/10.1063/5.0222214
Published: September 2024
View articletitled, Oxygen-close-packed (310)-plane substrates of β-Ga2O3 grown by the casting method
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Journal Articles

Ultralow electric-field poling of LiNbO3 single-crystal devices

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Di Hu, Xing Long Wang, Xian Yu Hu, Yi Ming Li, Jie Sun, An Quan Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 032902 (2024)
https://doi.org/10.1063/5.0218674
Published: July 2024
View articletitled, Ultralow electric-field poling of LiNbO3 single-crystal devices
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Journal Articles

Realization of all-crystalline GaN/Er:GaN/GaN core-cladding optical fiber structures

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T. B. Smith, Y. Q. Yan, W. P. Zhao, J. Li, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 192110 (2022)
https://doi.org/10.1063/5.0121910
Published: November 2022
View articletitled, Realization of all-crystalline GaN/Er:GaN/GaN core-cladding optical fiber structures
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Journal Articles

Atomic-level smoothing of glass and silicon surfaces by water polishing with an acrylic polymer plate

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Jianli Guo, Yusuke Matsuzawa, Gota Yamaguchi, Hidekazu Mimura
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 094105 (2022)
https://doi.org/10.1063/5.0078593
Published: March 2022
View articletitled, Atomic-level smoothing of glass and silicon surfaces by water polishing with an acrylic polymer plate
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Includes: Supplementary data
Journal Articles

Growth of high-quality one-inch free-standing heteroepitaxial (001) diamond on (11 2 ¯ 0) sapphire substrate

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Seong-Woo Kim, Yuki Kawamata, Ryota Takaya, Koji. Koyama, Makoto Kasu
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 202102 (2020)
https://doi.org/10.1063/5.0024070
Published: November 2020
View articletitled, Growth of high-quality one-inch free-standing heteroepitaxial (001) diamond on (11 2 ¯ 0) sapphire substrate
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Journal Articles

Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides

Editor’s PickFree
Z. Y. Sun, Y. Q. Yan, T. B. Smith, W. P. Zhao, J. Li, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 222105 (2019)
https://doi.org/10.1063/1.5093942
Published: June 2019
View articletitled, Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides
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Journal Articles

Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics

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Wei Li, P. Anantha, Shuyu Bao, Kwang Hong Lee, Xin Guo, Ting Hu, Lin Zhang, Hong Wang, Richard Soref, Chuan Seng Tan
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 241101 (2016)
https://doi.org/10.1063/1.4972183
Published: December 2016
View articletitled, Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics
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Journal Articles

Sequential control of step-bunching during graphene growth on SiC (0001)

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Jianfeng Bao, Osamu Yasui, Wataru Norimatsu, Keita Matsuda, Michiko Kusunoki
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 081602 (2016)
https://doi.org/10.1063/1.4961630
Published: August 2016
View articletitled, Sequential control of step-bunching during graphene growth on SiC (0001)
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Journal Articles

Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers

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Z. Y. Sun, J. Li, W. P. Zhao, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 052101 (2016)
https://doi.org/10.1063/1.4960360
Published: August 2016
View articletitled, Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers
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Journal Articles

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

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Yao-Feng Chang, Burt Fowler, Fei Zhou, Ying-Chen Chen, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 033504 (2016)
https://doi.org/10.1063/1.4940203
Published: January 2016
View articletitled, Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory
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Journal Articles

BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation

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Jijun Feng, Ryoichi Akimoto
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 161101 (2015)
https://doi.org/10.1063/1.4934359
Published: October 2015
View articletitled, BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation
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Journal Articles

Atomic-scale and pit-free flattening of GaN by combination of plasma pretreatment and time-controlled chemical mechanical polishing

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Hui Deng, Katsuyoshi Endo, Kazuya Yamamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 051602 (2015)
https://doi.org/10.1063/1.4928195
Published: August 2015
View articletitled, Atomic-scale and pit-free flattening of GaN by combination of plasma pretreatment and time-controlled chemical mechanical polishing
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Journal Articles

Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure

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Meiyun Zhang, Shibing Long, Guoming Wang, Xiaoxin Xu, Yang Li, Qi Liu, Hangbing Lv, Xiaojuan Lian, Enrique Miranda, Jordi Suñé, Ming Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 193501 (2014)
https://doi.org/10.1063/1.4901530
Published: November 2014
View articletitled, Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure
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Journal Articles

Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching

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C. O. Holder, J. T. Leonard, R. M. Farrell, D. A. Cohen, B. Yonkee, J. S. Speck, S. P. DenBaars, S. Nakamura, D. F. Feezell
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 031111 (2014)
https://doi.org/10.1063/1.4890864
Published: July 2014
View articletitled, Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
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Journal Articles

Semipolar (20 2 ¯ 1) GaN and InGaN quantum wells on sapphire substrates

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Benjamin Leung, Dili Wang, Yu-Sheng Kuo, Kanglin Xiong, Jie Song, Danti Chen, Sung Hyun Park, Su Yeon Hong, Joo Won Choi, Jung Han
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 262105 (2014)
https://doi.org/10.1063/1.4886578
Published: July 2014
View articletitled, Semipolar (20 2 ¯ 1) GaN and InGaN quantum wells on sapphire substrates
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Journal Articles

Investigation of electrically induced migration of copper on graphene surfaces: Theory and experiments

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Tao Wang, Bin Yu, Yan Liu, M. Jamal Deen
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 073104 (2013)
https://doi.org/10.1063/1.4818120
Published: August 2013
View articletitled, Investigation of electrically induced migration of copper on graphene surfaces: Theory and experiments
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Journal Articles

Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism

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Yue Bai, Huaqiang Wu, Ye Zhang, Minghao Wu, Jinyu Zhang, Ning Deng, He Qian, Zhiping Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 173503 (2013)
https://doi.org/10.1063/1.4803462
Published: April 2013
View articletitled, Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism
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Journal Articles

Integration of piezoelectric aluminum nitride and ultrananocrystalline diamond films for implantable biomedical microelectromechanical devices

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M. Zalazar, P. Gurman, J. Park, D. Kim, S. Hong, L. Stan, R. Divan, D. Czaplewski, O. Auciello
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 104101 (2013)
https://doi.org/10.1063/1.4792238
Published: March 2013
View articletitled, Integration of piezoelectric aluminum nitride and ultrananocrystalline diamond films for implantable biomedical microelectromechanical devices
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Journal Articles

Dielectric function spectra at 40 K and critical-point energies for CuIn0.7Ga0.3Se2

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S. G. Choi, R. Chen, C. Persson, T. J. Kim, S. Y. Hwang, Y. D. Kim, L. M. Mansfield
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 261903 (2012)
https://doi.org/10.1063/1.4773362
Published: December 2012
View articletitled, Dielectric function spectra at 40 K and critical-point energies for CuIn0.7Ga0.3Se2
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Includes: Supplementary data