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Journal Articles

Epitaxial growth of rutile GeO₂ via MOCVD

Imteaz Rahaman, Bobby G. Duersch, Hunter D. Ellis, Michael A. Scarpulla, Kai Fu

Appl. Phys. Lett. 125, 102103 (2024)

https://doi.org/10.1063/5.0226661

Published: September 2024

View article titled, Epitaxial growth of rutile GeO2 via MOCVD

Journal Articles

Oxygen-close-packed (310)-plane substrates of β-Ga₂O₃ grown by the casting method

Yuchao Yan, Xu Gao, Da Liu, Huifan Xiong, Yingying Liu, Keke Ma, Dan Wu, Jiabin Wang, Yan Wang, Ning Xia, Tianqi Deng, Zhu Jin, Hui Zhang, Deren Yang

Appl. Phys. Lett. 125, 102101 (2024)

https://doi.org/10.1063/5.0222214

Published: September 2024

View article titled, Oxygen-close-packed (310)-plane substrates of β-Ga2O3 grown by the casting method

Journal Articles

Anisotropic thermal expansion tensor of β -Ga₂O₃ and its critical role in casting-grown crystal cracking

Yuchao Yan, Dan Wu, Ning Xia, Tianqi Deng, Hui Zhang, Deren Yang

Appl. Phys. Lett. 124, 122102 (2024)

https://doi.org/10.1063/5.0195733

Published: March 2024

View article titled, Anisotropic thermal expansion tensor of β -Ga2O3 and its critical role in casting-grown crystal cracking

Includes: Supplementary data

Journal Articles

Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga₂O₃ thin film epitaxial growth

Jun Zhang, Junlei Zhao, Junting Chen, Mengyuan Hua

Appl. Phys. Lett. 124, 022102 (2024)

https://doi.org/10.1063/5.0177093

Published: January 2024

View article titled, Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth

Includes: Supplementary data

Journal Articles

A flux growth technique for high quality cubic boron arsenide bulk single crystals

Pawan Koirala, Wenhao Liu, Hanlin Wu, Aswin L. N. Kondusamy, Nikhil Dhale, Evan R. Glaser, Sam White, J. C. Culbertson, J. A. Freitas, Jr., Bing Lv

Appl. Phys. Lett. 123, 201901 (2023)

https://doi.org/10.1063/5.0182307

Published: November 2023

View article titled, A flux growth technique for high quality cubic boron arsenide bulk single crystals

Includes: Supplementary data

Journal Articles

Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors

Maliha Noshin, Xinyi Wen, Rohith Soman, Xiaoqing Xu, Srabanti Chowdhury

Appl. Phys. Lett. 123, 062103 (2023)

https://doi.org/10.1063/5.0140777

Published: August 2023

View article titled, Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors

Includes: Supplementary data

Journal Articles

Significant sensitivity enhancement of single crystal CdSe x-ray detector by liquid nitrogen cooling

Yanan Song, Shimao Wang, Xiao Zhao, Qianqian Hu, Changbao Huang, Gang Meng, Volodymyr Gnatyuk, Youbao Ni, Haixin Wu

Appl. Phys. Lett. 123, 032102 (2023)

https://doi.org/10.1063/5.0150787

Published: July 2023

View article titled, Significant sensitivity enhancement of single crystal CdSe x-ray detector by liquid nitrogen cooling

Includes: Supplementary data

Journal Articles

Mg and Al-induced phase transformation and stabilization of Ga₂O₃-based γ -phase spinels

Jingyu Tang, Kunyao Jiang, Stephen D. House, Chengchao Xu, Kelly Xiao, Lisa M. Porter, Robert F. Davis

Appl. Phys. Lett. 123, 012103 (2023)

https://doi.org/10.1063/5.0145076

Published: July 2023

View article titled, Mg and Al-induced phase transformation and stabilization of Ga2O3-based γ -phase spinels

Includes: Supplementary data

Journal Articles

Improving crystal quality of β-phase MgGaO thin films by using low-temperature homo-buffer layer

Chengyun Shou, Tianchen Yang, Abdullah Almujtabi, Theodore Yang, Yuan Li, Quazi Sanjid Mahmud, Mingjie Xu, Jian-Guo Zheng, Jianlin Liu

Appl. Phys. Lett. 122, 212101 (2023)

https://doi.org/10.1063/5.0147948

Published: May 2023

View article titled, Improving crystal quality of β-phase MgGaO thin films by using low-temperature homo-buffer layer

Includes: Supplementary data

Journal Articles

Deep UV transparent conductive Si-doped Ga₂O₃ thin films grown on Al₂O₃ substrates

Zhenni Yang, Xiangyu Xu, Yan Wang, Siliang Kuang, Duanyang Chen, Hongji Qi, K. H. L. Zhang

Appl. Phys. Lett. 122, 172102 (2023)

https://doi.org/10.1063/5.0147004

Published: April 2023

View article titled, Deep UV transparent conductive Si-doped Ga2O3 thin films grown on Al2O3 substrates

Includes: Supplementary data

Journal Articles

Converging-guiding-track design enables 100% growth deployment rate of ultrathin monocrystalline silicon nanowire channels

Wentao Qian, Yifei Liang, Junzhuan Wang, Zongguang Liu, Jun Xu, Linwei Yu

Appl. Phys. Lett. 122, 173101 (2023)

https://doi.org/10.1063/5.0142492

Published: April 2023

View article titled, Converging-guiding-track design enables 100% growth deployment rate of ultrathin monocrystalline silicon nanowire channels

Journal Articles

Photoluminescence from InSb_1−xBi_x alloys at extended wavelengths on InSb

R. C. White, L. J. Nordin, A. J. Muhowski, D. Wasserman, S. R. Bank

Appl. Phys. Lett. 121, 191901 (2022)

https://doi.org/10.1063/5.0121657

Published: November 2022

View article titled, Photoluminescence from InSb1−xBix alloys at extended wavelengths on InSb

Includes: Supplementary data

Journal Articles

Molecular beam epitaxy of highly crystalline GeSnC using CBr₄ at low temperatures

Tuhin Dey, Md. Shamim Reza, Augustus Arbogast, Mark W. Holtz, Ravi Droopad, Seth R. Bank, Mark A. Wistey

Appl. Phys. Lett. 121, 122104 (2022)

https://doi.org/10.1063/5.0102093

Published: September 2022

View article titled, Molecular beam epitaxy of highly crystalline GeSnC using CBr4 at low temperatures

Includes: Supplementary data

Journal Articles

Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects

A. Ajay, H. Jeong, T. Schreitmüller, M. Döblinger, D. Ruhstorfer, N. Mukhundhan, P. A. L. M. Koolen, J. J. Finley, G. Koblmüller

Appl. Phys. Lett. 121, 072107 (2022)

https://doi.org/10.1063/5.0095952

Published: August 2022

View article titled, Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects

Includes: Supplementary data

Journal Articles

Controlled Si doping of β -Ga₂O₃ by molecular beam epitaxy

J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T. Neal, N. Tanen, Y. Cho, T. J. Asel, S. Mou, P. Vogt, H. G. Xing, D. Jena

Appl. Phys. Lett. 121, 072108 (2022)

https://doi.org/10.1063/5.0101132

Published: August 2022

View article titled, Controlled Si doping of β -Ga2O3 by molecular beam epitaxy

Journal Articles

Growth and characterization of high-quality single-crystalline SnTe retaining cubic symmetry down to the lowest temperature studied

Ayanesh Maiti, Ankita Singh, Kartik K. Iyer, Arumugam Thamizhavel

Appl. Phys. Lett. 120, 112102 (2022)

https://doi.org/10.1063/5.0086644

Published: March 2022

View article titled, Growth and characterization of high-quality single-crystalline SnTe retaining cubic symmetry down to the lowest temperature studied

Journal Articles

Thin-film thermoelectric generator based on polycrystalline SiGe formed by Ag-induced layer exchange

M. Tsuji, M. Murata, A. Yamamoto, T. Suemasu, K. Toko

Appl. Phys. Lett. 117, 162103 (2020)

https://doi.org/10.1063/5.0021880

Published: October 2020

View article titled, Thin-film thermoelectric generator based on polycrystalline SiGe formed by Ag-induced layer exchange

Journal Articles

Epitaxial growth of β -Ga₂O₃ on (110) substrate by plasma-assisted molecular beam epitaxy

Takeki Itoh, Akhil Mauze, Yuewei Zhang, James S. Speck

Appl. Phys. Lett. 117, 152105 (2020)

https://doi.org/10.1063/5.0027884

Published: October 2020

View article titled, Epitaxial growth of β -Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy

Journal Articles

Low temperature homoepitaxy of (010) β -Ga₂O₃ by metalorganic vapor phase epitaxy: Expanding the growth window

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Jonathan Ogle, Luisa Whittaker-Brooks, Sriram Krishnamoorthy

Appl. Phys. Lett. 117, 142102 (2020)

https://doi.org/10.1063/5.0023778

Published: October 2020

View article titled, Low temperature homoepitaxy of (010) β -Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window

Includes: Supplementary data

Journal Articles

Twin defect-triggered deformations and Bi segregation in GaAs/GaAsBi core–multishell nanowires

Teruyoshi Matsuda, Kyohei Takada, Kohsuke Yano, Satoshi Shimomura, Yumiko Shimizu, Fumitaro Ishikawa

Appl. Phys. Lett. 117, 113105 (2020)

https://doi.org/10.1063/5.0013094

Published: September 2020

View article titled, Twin defect-triggered deformations and Bi segregation in GaAs/GaAsBi core–multishell nanowires

Includes: Supplementary data

NARROW

Topics

Epitaxial growth of rutile GeO₂ via MOCVD

Oxygen-close-packed (310)-plane substrates of β-Ga₂O₃ grown by the casting method

Anisotropic thermal expansion tensor of β -Ga₂O₃ and its critical role in casting-grown crystal cracking

Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga₂O₃ thin film epitaxial growth

A flux growth technique for high quality cubic boron arsenide bulk single crystals

Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors

Significant sensitivity enhancement of single crystal CdSe x-ray detector by liquid nitrogen cooling

Mg and Al-induced phase transformation and stabilization of Ga₂O₃-based γ -phase spinels

Improving crystal quality of β-phase MgGaO thin films by using low-temperature homo-buffer layer

Deep UV transparent conductive Si-doped Ga₂O₃ thin films grown on Al₂O₃ substrates

Converging-guiding-track design enables 100% growth deployment rate of ultrathin monocrystalline silicon nanowire channels

Photoluminescence from InSb_1−xBi_x alloys at extended wavelengths on InSb

Molecular beam epitaxy of highly crystalline GeSnC using CBr₄ at low temperatures

Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects

Controlled Si doping of β -Ga₂O₃ by molecular beam epitaxy

Growth and characterization of high-quality single-crystalline SnTe retaining cubic symmetry down to the lowest temperature studied

Thin-film thermoelectric generator based on polycrystalline SiGe formed by Ag-induced layer exchange

Epitaxial growth of β -Ga₂O₃ on (110) substrate by plasma-assisted molecular beam epitaxy

Low temperature homoepitaxy of (010) β -Ga₂O₃ by metalorganic vapor phase epitaxy: Expanding the growth window

Twin defect-triggered deformations and Bi segregation in GaAs/GaAsBi core–multishell nanowires

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