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Journal Articles
Depth profile of trap concentration induced by heavy ion irradiation in 4H-SiC Schottky barrier diode
Available to PurchaseXueqiang Yu, Xiaodong Xu, Hao Jiang, Lei Wu, Fengkai Liu, Weiqi Li, Zhongli Liu, Hongbin Geng, Jianqun Yang, Xingji Li
Journal:
Applied Physics Letters
Appl. Phys. Lett. 127, 023507 (2025)
Published: July 2025
Journal Articles
Beryllium-incorporated ScAlN/GaN HEMTs with low off-current and high current stress stability
Available to PurchaseJie Zhang, Md Tanvir Hasan, Shubham Mondal, Zhengwei Ye, Jiangnan Liu, Md Mehedi Hasan Tanim, Yuyang Chen, Sangyong Lee, Dongjae Shin, Yiyang Li, Kai Sun, Zetian Mi
Journal:
Applied Physics Letters
Appl. Phys. Lett. 127, 023502 (2025)
Published: July 2025
Journal Articles
Synergistic mechanism underlying the enhanced electrical performance of vertical β-Ga2O3 Schottky barrier diodes through proton irradiation and annealing
Available to PurchaseWeihao Lin, Yun Li, Junzheng Gao, Zhimei Yang, Min Gong, Mingmin Huang, Yuhao Wang, Chenglin Liao, Yao Ma, Gang Xiang
Journal:
Applied Physics Letters
Appl. Phys. Lett. 127, 012101 (2025)
Published: July 2025
Journal Articles
Self-powered deep-UV photodetectors based on (In,Ga)O nanowires for humanoid robots controlling
Available to PurchaseYuan Tang, Jiawen Wang, Yu Jin, Jianya Zhang, Yiping Shi, Tianxiang Wang, Rui Xu, Zhiyang Liu, Yukun Zhao
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 262104 (2025)
Published: July 2025
Journal Articles
WS2 p-MOSFETs with channels deposited by plasma-enhanced atomic-layer deposition
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 253102 (2025)
Published: June 2025
Journal Articles
High- κ HfO2/ZrO2 superlattice for BEOL-compatible GAAFET memory device
Available to PurchaseChen-You Wei, Kuei-Chun Liao, Yi-Ju Yao, Cheng-En Wu, Chien-Lung Chen, Chih-Chao Yang, Fu-Ju Hou, Guang-Li Luo, Yung-Hsien Wu, Yung-Chun Wu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 242902 (2025)
Published: June 2025
Journal Articles
Efficiency cliff in scaling InGaN light-emitting diodes down to submicron
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 242101 (2025)
Published: June 2025
Journal Articles
Quantitative characterization of ZrO2 gate dielectric interface with tellurium
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 232110 (2025)
Published: June 2025
Journal Articles
Low-temperature microwave annealing stabilizes the morphotropic phase boundary in HfO2/ZrO2 superlattice heterostructures
Available to PurchaseChen-You Wei, Yu-Hong Chen, Tzu-I Kao, Cheng-En Wu, Chao-Wei Wu, Heng-Jia Chang, Yi-Ju Yao, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 232105 (2025)
Published: June 2025
Journal Articles
Journal Articles
Mitigating carrier loss in photoelectrochemical photocathodes: An approach combining optical computation and experimental validation
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 223508 (2025)
Published: June 2025
Journal Articles
Maximilian C. Schuchter, Joonas Hilska, Markus Peil, Eero Koivusalo, Marco Gaulke, Ursula Keller, Mircea Guina
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 221103 (2025)
Published: June 2025
Journal Articles
Journal Articles
Continuous zoom metalens based on the polarization state of light source in the ultraviolet band
Available to PurchaseXintong Wei, Zhongzhu Liang, Xiaoyan Shi, Fuming Yang, Siyu Guo, Yan Jia, Zhe Wu, Weizhen Liu, Jihui Jiang, Yichun Liu
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 201703 (2025)
Published: May 2025
Journal Articles
Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 193504 (2025)
Published: May 2025
Journal Articles
A CIPS-based negative capacitance field-effect transistor biosensor with extended-gate structure
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 193501 (2025)
Published: May 2025
Journal Articles
Comparative Raman study of graphene on BaTiO3 (001) and (111) single crystals: Temperature-driven evolution of ferroelectric domains
Available to PurchaseZied Othmen, Riadh Othmen, Antonella Cavanna, Ali Madouri, Pascale Gemeiner, Doru C. Lupascu, Brahim Dkhil
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 181901 (2025)
Published: May 2025
Journal Articles
Strain engineering of vertical (110) InGaAs/InP quantum wells laterally grown on (001) SOI
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 182104 (2025)
Published: May 2025
Journal Articles
1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 182101 (2025)
Published: May 2025
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Vertical p-GaN/n-Ga2O3 heterojunction diodes enabled by PAMBE
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 172106 (2025)
Published: April 2025
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