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Journal Articles

Depth profile of trap concentration induced by heavy ion irradiation in 4H-SiC Schottky barrier diode

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Xueqiang Yu, Xiaodong Xu, Hao Jiang, Lei Wu, Fengkai Liu, Weiqi Li, Zhongli Liu, Hongbin Geng, Jianqun Yang, Xingji Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 127, 023507 (2025)
https://doi.org/10.1063/5.0266534
Published: July 2025
View article titled, Depth profile of trap concentration induced by heavy ion irradiation in 4H-SiC Schottky barrier diode
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Journal Articles

Beryllium-incorporated ScAlN/GaN HEMTs with low off-current and high current stress stability

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Jie Zhang, Md Tanvir Hasan, Shubham Mondal, Zhengwei Ye, Jiangnan Liu, Md Mehedi Hasan Tanim, Yuyang Chen, Sangyong Lee, Dongjae Shin, Yiyang Li, Kai Sun, Zetian Mi
Journal: Applied Physics Letters
Appl. Phys. Lett. 127, 023502 (2025)
https://doi.org/10.1063/5.0270230
Published: July 2025
View article titled, Beryllium-incorporated ScAlN/GaN HEMTs with low off-current and high current stress stability
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Journal Articles

Synergistic mechanism underlying the enhanced electrical performance of vertical β-Ga2O3 Schottky barrier diodes through proton irradiation and annealing

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Weihao Lin, Yun Li, Junzheng Gao, Zhimei Yang, Min Gong, Mingmin Huang, Yuhao Wang, Chenglin Liao, Yao Ma, Gang Xiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 127, 012101 (2025)
https://doi.org/10.1063/5.0278203
Published: July 2025
View article titled, Synergistic mechanism underlying the enhanced electrical performance of vertical β-Ga2O3 Schottky barrier diodes through proton irradiation and annealing
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Journal Articles

Self-powered deep-UV photodetectors based on (In,Ga)O nanowires for humanoid robots controlling

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Yuan Tang, Jiawen Wang, Yu Jin, Jianya Zhang, Yiping Shi, Tianxiang Wang, Rui Xu, Zhiyang Liu, Yukun Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 262104 (2025)
https://doi.org/10.1063/5.0278676
Published: July 2025
View article titled, Self-powered deep-UV photodetectors based on (In,Ga)O nanowires for humanoid robots controlling
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Journal Articles

WS2 p-MOSFETs with channels deposited by plasma-enhanced atomic-layer deposition

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Ruixue Li, Rebecca A. Dawley, Shivanshu Mishra, Anil Adhikari, Ageeth A. Bol, Steven J. Koester
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 253102 (2025)
https://doi.org/10.1063/5.0267728
Published: June 2025
View article titled, WS2 p-MOSFETs with channels deposited by plasma-enhanced atomic-layer deposition
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Journal Articles

High- κ HfO2/ZrO2 superlattice for BEOL-compatible GAAFET memory device

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Chen-You Wei, Kuei-Chun Liao, Yi-Ju Yao, Cheng-En Wu, Chien-Lung Chen, Chih-Chao Yang, Fu-Ju Hou, Guang-Li Luo, Yung-Hsien Wu, Yung-Chun Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 242902 (2025)
https://doi.org/10.1063/5.0274127
Published: June 2025
View article titled, High- κ HfO2/ZrO2 superlattice for BEOL-compatible GAAFET memory device
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Journal Articles

Efficiency cliff in scaling InGaN light-emitting diodes down to submicron

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J. Lee, Y. C. Chiu, C. Bayram
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 242101 (2025)
https://doi.org/10.1063/5.0257758
Published: June 2025
View article titled, Efficiency cliff in scaling InGaN light-emitting diodes down to submicron
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Journal Articles

Quantitative characterization of ZrO2 gate dielectric interface with tellurium

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Kyeong-Jae Byeon, I. K. M. Reaz Rahman, Inha Kim, Howoo Park, Ali Javey
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 232110 (2025)
https://doi.org/10.1063/5.0267586
Published: June 2025
View article titled, Quantitative characterization of ZrO2 gate dielectric interface with tellurium
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Journal Articles

Low-temperature microwave annealing stabilizes the morphotropic phase boundary in HfO2/ZrO2 superlattice heterostructures

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Chen-You Wei, Yu-Hong Chen, Tzu-I Kao, Cheng-En Wu, Chao-Wei Wu, Heng-Jia Chang, Yi-Ju Yao, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 232105 (2025)
https://doi.org/10.1063/5.0264349
Published: June 2025
View article titled, Low-temperature microwave annealing stabilizes the morphotropic phase boundary in HfO2/ZrO2 superlattice heterostructures
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Journal Articles

Hydrophilic direct bonding of (100) diamond and deposited SiO2 substrates

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Tianyin Chen, Jeffrel Hermias, Salahuddin Nur, Ryoichi Ishihara
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 231901 (2025)
https://doi.org/10.1063/5.0263008
Published: June 2025
View article titled, Hydrophilic direct bonding of (100) diamond and deposited SiO2 substrates
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Journal Articles

Mitigating carrier loss in photoelectrochemical photocathodes: An approach combining optical computation and experimental validation

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Jialin Shao, Yujie Wang, Huiya Liu, Rui Hao, Lili Luo, Yingtao Li, Jason K. Cooper, Zemin Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 223508 (2025)
https://doi.org/10.1063/5.0273633
Published: June 2025
View article titled, Mitigating carrier loss in photoelectrochemical photocathodes: An approach combining optical computation and experimental validation
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Journal Articles

Fast recovery dynamics of GaSbBi-based SESAMs for high-fluence operation

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Maximilian C. Schuchter, Joonas Hilska, Markus Peil, Eero Koivusalo, Marco Gaulke, Ursula Keller, Mircea Guina
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 221103 (2025)
https://doi.org/10.1063/5.0271391
Published: June 2025
View article titled, Fast recovery dynamics of GaSbBi-based SESAMs for high-fluence operation
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Journal Articles

A TEM study of MOCVD-grown rutile GeO2 films

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Imteaz Rahaman, Botong Li, Hunter D. Ellis, Brian Roy Van Devener, Randy C. Polson, Kai Fu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 212106 (2025)
https://doi.org/10.1063/5.0244206
Published: May 2025
View article titled, A TEM study of MOCVD-grown rutile GeO2 films
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Journal Articles

Continuous zoom metalens based on the polarization state of light source in the ultraviolet band

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Xintong Wei, Zhongzhu Liang, Xiaoyan Shi, Fuming Yang, Siyu Guo, Yan Jia, Zhe Wu, Weizhen Liu, Jihui Jiang, Yichun Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 201703 (2025)
https://doi.org/10.1063/5.0273466
Published: May 2025
View article titled, Continuous zoom metalens based on the polarization state of light source in the ultraviolet band
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Journal Articles

Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer

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Jae Won Na, Kunho Moon, I. Sak Lee, Kyungho Park, Hwa Seon Kim, Si Joon Kim, Hyun Jae Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193504 (2025)
https://doi.org/10.1063/5.0252761
Published: May 2025
View article titled, Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer
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Journal Articles

A CIPS-based negative capacitance field-effect transistor biosensor with extended-gate structure

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Caizhen Su, Haojie Zhao, Jiawen Yan, Yixuan Zou, Peng Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 193501 (2025)
https://doi.org/10.1063/5.0268935
Published: May 2025
View article titled, A CIPS-based negative capacitance field-effect transistor biosensor with extended-gate structure
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Journal Articles

Comparative Raman study of graphene on BaTiO3 (001) and (111) single crystals: Temperature-driven evolution of ferroelectric domains

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Zied Othmen, Riadh Othmen, Antonella Cavanna, Ali Madouri, Pascale Gemeiner, Doru C. Lupascu, Brahim Dkhil
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 181901 (2025)
https://doi.org/10.1063/5.0263611
Published: May 2025
View article titled, Comparative Raman study of graphene on BaTiO3 (001) and (111) single crystals: Temperature-driven evolution of ferroelectric domains
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Journal Articles

Strain engineering of vertical (110) InGaAs/InP quantum wells laterally grown on (001) SOI

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Zili Lei, Donghui Fu, Yu Han, Siyuan Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 182104 (2025)
https://doi.org/10.1063/5.0263330
Published: May 2025
View article titled, Strain engineering of vertical (110) InGaAs/InP quantum wells laterally grown on (001) SOI
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Journal Articles

1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study

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Yitao Feng, Hong Zhou, Sami Alghamdi, Saud Wasly, Yue Hao, Jincheng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 182101 (2025)
https://doi.org/10.1063/5.0260146
Published: May 2025
View article titled, 1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study
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Journal Articles

Vertical p-GaN/n-Ga2O3 heterojunction diodes enabled by PAMBE

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Frank P. Kelly, Matthew M. Landi, Kyekyoon Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 172106 (2025)
https://doi.org/10.1063/5.0260105
Published: April 2025
View article titled, Vertical p-GaN/n-Ga2O3 heterojunction diodes enabled by PAMBE
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