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Journal Articles

Time-resolved nanosecond magnetization switching induced by spin-transfer torque for cryogenic memories

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Fei Xu, Lei Zhou, Wenlong Cai, Kangning Xu, Kaihua Cao, Kewen Shi, Weisheng Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 232405 (2025)
https://doi.org/10.1063/5.0266924
Published: June 2025
View articletitled, Time-resolved nanosecond magnetization switching induced by spin-transfer torque for cryogenic memories
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Journal Articles

200-period Si/Si0.8Ge0.2 superlattice structure growth and characterization for vertical stacked DRAM

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Xiaomeng Liu, Xiangsheng Wang, Xinhe Wang, Fan Yang, Hailing Wang, Yanpeng Song, Xinyou Liu, Ying Zhang, Han Wang, Wenhao Zhang, Zhenzhen Kong, Zhaoqiang Bai, Guilei Wang, Chao Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 232101 (2025)
https://doi.org/10.1063/5.0253276
Published: June 2025
View articletitled, 200-period Si/Si0.8Ge0.2 superlattice structure growth and characterization for vertical stacked DRAM
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Journal Articles

Enhanced current-induced torque efficiency in Pt/Co/Tb/Cr structures through the synergistic action of orbital torque effect

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Yu Zhang, Yonghai Guo, Bo Zhang, Bo Wang, Ze Yan, Wenbo Lv, Xingrong Qi, Zhirui Wang, Jiangwei Cao
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 052401 (2025)
https://doi.org/10.1063/5.0249063
Published: February 2025
View articletitled, Enhanced current-induced torque efficiency in Pt/Co/Tb/Cr structures through the synergistic action of orbital torque effect
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Journal Articles

Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers

Editor’s PickOpen Access
Rombang Rizky Sihombing, Thomas Scheike, Jun Uzuhashi, Tadakatsu Ohkubo, Zhenchao Wen, Seiji Mitani, Hiroaki Sukegawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022407 (2025)
https://doi.org/10.1063/5.0247660
Published: January 2025
View articletitled, Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers
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Journal Articles

Spin transfer torque switching in double magnetic tunnel junctions based on dual MgO layers

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G. Mihajlović, W. Jung, R. V. Chopdekar, J. Lille, M. K. Grobis
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022403 (2025)
https://doi.org/10.1063/5.0241616
Published: January 2025
View articletitled, Spin transfer torque switching in double magnetic tunnel junctions based on dual MgO layers
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Journal Articles

Field-free spin–orbit switching of canted magnetization in Pt/Co/Ru/RuO2(101) multilayers

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Yunzhuo Wu, Tong Wu, Haoran Chen, Yongwei Cui, Hongyue Xu, Nan Jiang, Zhen Cheng, Yizheng Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012401 (2025)
https://doi.org/10.1063/5.0246672
Published: January 2025
View articletitled, Field-free spin–orbit switching of canted magnetization in Pt/Co/Ru/RuO2(101) multilayers
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Journal Articles

Engineering oxygen vacancy-induced interface trap memristive effect in selenium-implanted gallium oxide

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Yimin Liao, Zhigao Xie, Hanzhao Song, Jierui Xue, Chee-Keong Tan
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 192106 (2024)
https://doi.org/10.1063/5.0233137
Published: November 2024
View articletitled, Engineering oxygen vacancy-induced interface trap memristive effect in selenium-implanted gallium oxide
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Journal Articles

Spin Hall effect in platinum deposited by atomic layer deposition

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Ken Ishida, Kota Sato, Pham Nam Hai
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 162404 (2024)
https://doi.org/10.1063/5.0229825
Published: October 2024
View articletitled, Spin Hall effect in platinum deposited by atomic layer deposition
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Journal Articles

Hafnia-based neuromorphic devices

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Hai Zhong, Kuijuan Jin, Chen Ge
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 150501 (2024)
https://doi.org/10.1063/5.0226206
Published: October 2024
View articletitled, Hafnia-based neuromorphic devices
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Journal Articles

Wide-bandgap semiconductor SiC-based memristors fabricated entirely by electron beam evaporation for artificial synapses

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Haiming Qin, Shilei Sun, Nan He, Pengchao Zhang, Shuai Chen, Cong Han, Rui Hu, Jiawen Wu, Weijing Shao, Mohamed Saadi, Hao Zhang, Youde Hu, Xinpeng Wang, Yi Liu, Liang Zeng, Yi Tong
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 143502 (2024)
https://doi.org/10.1063/5.0230471
Published: October 2024
View articletitled, Wide-bandgap semiconductor SiC-based memristors fabricated entirely by electron beam evaporation for artificial synapses
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Journal Articles

Self-rectifying memristors with high rectification ratio and dynamic linearity for in-memory computing

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Guobin Zhang, Zijian Wang, Xuemeng Fan, Zhen Wang, Pengtao Li, Qi Luo, Dawei Gao, Qing Wan, Yishu Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 133501 (2024)
https://doi.org/10.1063/5.0225833
Published: September 2024
View articletitled, Self-rectifying memristors with high rectification ratio and dynamic linearity for in-memory computing
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Journal Articles

Solution-processed 10 nm thick ferroelectric polymer film on a TiO2 nanolayer for flexible nonvolatile memories

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Xinhui Li, Xingyao Dai, Ce-Wen Nan, Xin Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 052901 (2024)
https://doi.org/10.1063/5.0208073
Published: July 2024
View articletitled, Solution-processed 10 nm thick ferroelectric polymer film on a TiO2 nanolayer for flexible nonvolatile memories
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Journal Articles

Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM

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Qian Sun, Yaqing Chi, Yang Guo, Bin Liang, Ming Tao, Zhenyu Wu, Hongxia Guo, Qiwen Zheng, Wangyong Chen, Yulin Gao, Peixiong Zhao, Xingji Li, Jianjun Chen, Deng Luo, Hanhan Sun, Yahao Fang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 022101 (2024)
https://doi.org/10.1063/5.0214621
Published: July 2024
View articletitled, Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM
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Journal Articles

A cold-electrode metal–oxide resistive random access memory

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Jifang Cao, Bing Chen, Zhijiang Wang, Junru Qu, Jiayi Zhao, Rongzong Shen, Xiao Yu, Zhiping Yu, Fei Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 013503 (2024)
https://doi.org/10.1063/5.0214593
Published: July 2024
View articletitled, A cold-electrode metal–oxide resistive random access memory
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Journal Articles

Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions

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Jinjin Shao, Ruiqiang Song, Shaoqing Li, Yang Guo, Yaqing Chi, Bin Liang, Jianjun Chen, Yaohua Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 262103 (2024)
https://doi.org/10.1063/5.0213157
Published: June 2024
View articletitled, Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions
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Journal Articles

Double perovskite Bi2FeMnO6/TiO2 thin film heterostructure device for neuromorphic computing

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Dong-Liang Li, Wen-Min Zhong, Xin-Gui Tang, Qin-yu He, Yan-Ping Jiang, Qiu-Xiang Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 253501 (2024)
https://doi.org/10.1063/5.0205429
Published: June 2024
View articletitled, Double perovskite Bi2FeMnO6/TiO2 thin film heterostructure device for neuromorphic computing
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Journal Articles

Rapid synthesis of MoS2 for transistors and memristors

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Weiyi Lin
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 241901 (2024)
https://doi.org/10.1063/5.0196644
Published: June 2024
View articletitled, Rapid synthesis of MoS2 for transistors and memristors
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Journal Articles

Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application

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Divya Kaushik, Harshit Sharma, Nitish Saini, C. K. Suman, Ritu Srivastava
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233506 (2024)
https://doi.org/10.1063/5.0208254
Published: June 2024
View articletitled, Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application
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Journal Articles

A tantalum oxide based memristive neuron device for anomaly detection application

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Zuheng Wu, Yang Hu, Zhe Feng, Jianxun Zou, Wenbin Guo, Jian Lu, Tuo Shi, Su Tan, Zeqing Wang, Ruihan Yu, Yunlai Zhu, Zuyu Xu, Yuehua Dai
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233505 (2024)
https://doi.org/10.1063/5.0212850
Published: June 2024
View articletitled, A tantalum oxide based memristive neuron device for anomaly detection application
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Journal Articles

Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology

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Kexiang Wang, Jie Lu, Zeyang Xiang, Ranping Li, Zixuan Wang, Huilin Jin, Ran Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 203503 (2024)
https://doi.org/10.1063/5.0212383
Published: May 2024
View articletitled, Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology
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