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Journal Articles

Printable ion-gel-gated In2O3 synaptic transistor array for neuro-inspired memory

Editor’s Pick
Chenxing Jin, Wanrong Liu, Yulong Huang, Yunchao Xu, Yiling Nie, Gengming Zhang, Pei He, Jia Sun, Junliang Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 233701 (2022)
https://doi.org/10.1063/5.0092968
Published: June 2022
View article titled, Printable ion-gel-gated In<sub>2</sub>O<sub>3</sub> synaptic transistor array for neuro-inspired memory
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Includes: Supplementary data
Journal Articles

MEM-FLASH non-volatile memory device for high-temperature multibit data storage

Pushpapraj Singh, Dhairya Singh Arya, Udit Jain
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 043501 (2019)
https://doi.org/10.1063/1.5098135
Published: July 2019
View article titled, MEM-FLASH non-volatile memory device for high-temperature multibit data storage
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Journal Articles

Investigation of multilayer WS2 flakes as charge trapping stack layers in non-volatile memories

Hong Wang, Deliang Ren, Chao Lu, Xiaobing Yan
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 231903 (2018)
https://doi.org/10.1063/1.5024799
Published: June 2018
View article titled, Investigation of multilayer WS<sub>2</sub> flakes as charge trapping stack layers in non-volatile memories
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Journal Articles

Multilevel storage device based on domain-wall motion in a magnetic tunnel junction

Jialin Cai, Bin Fang, Chao Wang, Zhongming Zeng
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 182410 (2017)
https://doi.org/10.1063/1.5002632
Published: November 2017
View article titled, Multilevel storage device based on domain-wall motion in a magnetic tunnel junction
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Journal Articles

Transparent multi-level-cell nonvolatile memory with dual-gate amorphous indium-gallium-zinc oxide thin-film transistors

Min-Ju Ahn, Won-Ju Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 252106 (2016)
https://doi.org/10.1063/1.4972961
Published: December 2016
View article titled, Transparent multi-level-cell nonvolatile memory with dual-gate amorphous indium-gallium-zinc oxide thin-film transistors
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Journal Articles

Micro-electromechanical memory bit based on magnetic repulsion

Miquel López-Suárez, Igor Neri
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 133505 (2016)
https://doi.org/10.1063/1.4963839
Published: September 2016
View article titled, Micro-electromechanical memory bit based on magnetic repulsion
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Journal Articles

Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resistance random access memory

Xiang Yang, Yang Lu, Jongho Lee, I-Wei Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 013506 (2016)
https://doi.org/10.1063/1.4939443
Published: January 2016
View article titled, Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resistance random access memory
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Includes: Supplementary data
Journal Articles

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 212106 (2015)
https://doi.org/10.1063/1.4921926
Published: May 2015
View article titled, Resistive switching characteristics of Si<sub>3</sub>N<sub>4</sub>-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
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Journal Articles

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

Fei Zhou, Yao-Feng Chang, Burt Fowler, Kwangsub Byun, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 063508 (2015)
https://doi.org/10.1063/1.4909533
Published: February 2015
View article titled, Stabilization of multiple resistance levels by current-sweep in SiO<sub>x</sub>-based resistive switching memory
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Journal Articles

Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

José Ramón Durán Retamal, Chen-Fang Kang, Po-Kang Yang, Chuan-Pei Lee, Der-Hsien Lien, Chih-Hsiang Ho, Jr-Hau He
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 182101 (2014)
https://doi.org/10.1063/1.4901072
Published: November 2014
View article titled, Low-resistivity C54-TiSi<sub>2</sub> as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory
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Journal Articles

Molecular adhesion controlled microelectromechanical memory device for harsh environment data storage

Geng Li Chua, Pushpapraj Singh, Bo Woon Soon, Ying Shun Liang, Karthik Gopal Jayaraman, Tony T.-H. Kim, Navab Singh
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 113503 (2014)
https://doi.org/10.1063/1.4895578
Published: September 2014
View article titled, Molecular adhesion controlled microelectromechanical memory device for harsh environment data storage
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Journal Articles

Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory

Sangheon Lee, Jiyong Woo, Daeseok Lee, Euijun Cha, Jaesung Park, Kibong Moon, Jeonghwan Song, Yunmo Koo, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 052108 (2014)
https://doi.org/10.1063/1.4864471
Published: February 2014
View article titled, Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory
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Journal Articles

Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method

Ji-Hyun Hur, Seung Ryul Lee, Myoung-Jae Lee, Seong-Ho Cho, Youngsoo Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 113504 (2013)
https://doi.org/10.1063/1.4821189
Published: September 2013
View article titled, Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method
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Journal Articles

Formation mechanisms of embedded nanocrystals in SiNx

J. C. Canniff, A. W. Wood, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 243111 (2013)
https://doi.org/10.1063/1.4810917
Published: June 2013
View article titled, Formation mechanisms of embedded nanocrystals in SiN<sub>x</sub>
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Journal Articles

Hybrid polarity and carrier injection of gold and gadolinium oxide bi-nanocrystals structure

Jer-Chyi Wang, Chih-Ting Lin, Po-Wei Huang, Chao-Sung Lai, Li-Chun Chang, Chih-I Wu, Jung-Hung Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 083507 (2013)
https://doi.org/10.1063/1.4794070
Published: February 2013
View article titled, Hybrid polarity and carrier injection of gold and gadolinium oxide bi-nanocrystals structure
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Journal Articles

Scanning nonlinear dielectric microscopy observation of accumulated charges in metal-SiO2-SiN-SiO2-Si flash memory by detecting higher-order nonlinear permittivity

Koichiro Honda, Yasuo Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 242101 (2012)
https://doi.org/10.1063/1.4769352
Published: December 2012
View article titled, Scanning nonlinear dielectric microscopy observation of accumulated charges in metal-SiO<sub>2</sub>-SiN-SiO<sub>2</sub>-Si flash memory by detecting higher-order nonlinear permittivity
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Journal Articles

Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer

Seung Wook Ryu, Young Bae Ahn, Hyeong Joon Kim, Yoshio Nishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 133502 (2012)
https://doi.org/10.1063/1.3697691
Published: March 2012
View article titled, Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer
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Journal Articles

Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory

Dae-Hwan Kang, Nan Young Kim, Hongsik Jeong, Byung-ki Cheong
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 063508 (2012)
https://doi.org/10.1063/1.3684245
Published: February 2012
View article titled, Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory
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Journal Articles

Suppression of dielectric crystallization on metal by introduction of SiO2 layer for metal floating gate memory blocking oxide

Srikant Jayanti, Veena Misra
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 222903 (2011)
https://doi.org/10.1063/1.3661173
Published: November 2011
View article titled, Suppression of dielectric crystallization on metal by introduction of SiO<sub>2</sub> layer for metal floating gate memory blocking oxide
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Journal Articles

Metal-oxide-high- k -oxide-silicon memory structure incorporating a Tb 2 O 3 charge trapping layer

Tung-Ming Pan, Ji-Shing Jung, Fa-Hsyang Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 012906 (2010)
https://doi.org/10.1063/1.3462321
Published: July 2010
View article titled, Metal-oxide-high- k -oxide-silicon memory structure incorporating a Tb 2 O 3 charge trapping layer
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