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Journal Articles

Ultrafast nonadiabatic dynamics of λ -DNA upon low energy proton irradiation

Zun-Yi Deng, Zhihua Hu, Hong-Jian Feng

Appl. Phys. Lett. 120, 043702 (2022)

https://doi.org/10.1063/5.0081993

Published: January 2022

View article titled, Ultrafast nonadiabatic dynamics of λ -DNA upon low energy proton irradiation

Includes: Supplementary data

Journal Articles

Post-growth modulation doping by ion implantation

P.-Y. Chiu, D. Lidsky, Y. Chuang, Y.-H. Su, J.-Y. Li, C. T. Harris, T. M. Lu

Appl. Phys. Lett. 117, 263502 (2020)

https://doi.org/10.1063/5.0031992

Published: December 2020

View article titled, Post-growth modulation doping by ion implantation

Includes: Supplementary data

Journal Articles

Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation

Arash Dehzangi, Donghai Wu, Ryan McClintock, Jiakai Li, Manijeh Razeghi

Appl. Phys. Lett. 116, 221103 (2020)

https://doi.org/10.1063/5.0010273

Published: June 2020

View article titled, Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation

Journal Articles

Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors

Jiandong Sun, Zhipeng Zhang, Xiang Li, Hua Qin, Yunfei Sun, Yong Cai, Guohao Yu, Zhili Zhang, Jinfeng Zhang, Yang Shangguan, Lin Jin, Xinxing Li, Baoshun Zhang, V. V. Popov

Appl. Phys. Lett. 115, 111101 (2019)

https://doi.org/10.1063/1.5114682

Published: September 2019

View article titled, Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors

Journal Articles

Bright single photon sources in lateral silicon carbide light emitting diodes

Matthias Widmann, Matthias Niethammer, Takahiro Makino, Torsten Rendler, Stefan Lasse, Takeshi Ohshima, Jawad Ul Hassan, Nguyen Tien Son, Sang-Yun Lee, Jörg Wrachtrup

Appl. Phys. Lett. 112, 231103 (2018)

https://doi.org/10.1063/1.5032291

Published: June 2018

View article titled, Bright single photon sources in lateral silicon carbide light emitting diodes

Journal Articles

High dopant activation of phosphorus in Ge crystal with high-temperature implantation and two-step microwave annealing

Tzu-Lang Shih, Yin-Hsien Su, Wen-Hsi Lee

Appl. Phys. Lett. 109, 122103 (2016)

https://doi.org/10.1063/1.4962487

Published: September 2016

View article titled, High dopant activation of phosphorus in Ge crystal with high-temperature implantation and two-step microwave annealing

Journal Articles

Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping

Masahiro Koike, Yuuichi Kamimuta, Tsutomu Tezuka, Kikuo Yamabe

Appl. Phys. Lett. 109, 102104 (2016)

https://doi.org/10.1063/1.4962436

Published: September 2016

View article titled, Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping

Journal Articles

Electrostatically defined silicon quantum dots with counted antimony donor implants

M. Singh, J. L. Pacheco, D. Perry, E. Garratt, G. Ten Eyck, N. C. Bishop, J. R. Wendt, R. P. Manginell, J. Dominguez, T. Pluym, D. R. Luhman, E. Bielejec, M. P. Lilly, M. S. Carroll

Appl. Phys. Lett. 108, 062101 (2016)

https://doi.org/10.1063/1.4940421

Published: February 2016

View article titled, Electrostatically defined silicon quantum dots with counted antimony donor implants

Includes: Supplementary data

Journal Articles

In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

Maria M. Koleśnik-Gray, Christian Sorger, Subhajit Biswas, Justin D. Holmes, Heiko B. Weber, Vojislav Krstić

Appl. Phys. Lett. 106, 233109 (2015)

https://doi.org/10.1063/1.4922527

Published: June 2015

View article titled, In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

Includes: Supplementary data

Journal Articles

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Dae-Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo

Appl. Phys. Lett. 105, 263505 (2014)

https://doi.org/10.1063/1.4905366

Published: December 2014

View article titled, Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Journal Articles

Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

Clint Naquin, Mark Lee, Hal Edwards, Guru Mathur, Tathagata Chatterjee, Ken Maggio

Appl. Phys. Lett. 105, 213507 (2014)

https://doi.org/10.1063/1.4902919

Published: November 2014

View article titled, Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

Journal Articles

Vertical gate-all-around junctionless nanowire transistors with asymmetric diameters and underlap lengths

Jun-Sik Yoon, Taiuk Rim, Jungsik Kim, Meyya Meyyappan, Chang-Ki Baek, Yoon-Ha Jeong

Appl. Phys. Lett. 105, 102105 (2014)

https://doi.org/10.1063/1.4895030

Published: September 2014

View article titled, Vertical gate-all-around junctionless nanowire transistors with asymmetric diameters and underlap lengths

Journal Articles

Stark shift and field ionization of arsenic donors in ²⁸Si-silicon-on-insulator structures

C. C. Lo, S. Simmons, R. Lo Nardo, C. D. Weis, A. M. Tyryshkin, J. Meijer, D. Rogalla, S. A. Lyon, J. Bokor, T. Schenkel, J. J. L. Morton

Appl. Phys. Lett. 104, 193502 (2014)

https://doi.org/10.1063/1.4876175

Published: May 2014

View article titled, Stark shift and field ionization of arsenic donors in 28Si-silicon-on-insulator structures

Journal Articles

Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

Masafumi Yokoyama, Koichi Nishi, Sanghyeon Kim, Haruki Yokoyama, Mitsuru Takenaka, Shinichi Takagi

Appl. Phys. Lett. 104, 093509 (2014)

https://doi.org/10.1063/1.4867262

Published: March 2014

View article titled, Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

Journal Articles

Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

L. Alloatti, M. Lauermann, C. Sürgers, C. Koos, W. Freude, J. Leuthold

Appl. Phys. Lett. 103, 051104 (2013)

https://doi.org/10.1063/1.4817255

Published: July 2013

View article titled, Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

Includes: Supplementary data

Journal Articles

Optoelectronic measurement of x-ray synchrotron pulses: A proof of concept demonstration

Stephen M. Durbin, Aamer Mahmood, Marc Caffee, Sergei Savikhin, Eric M. Dufresne, Haidan Wen, Yuelin Li

Appl. Phys. Lett. 102, 051109 (2013)

https://doi.org/10.1063/1.4791559

Published: February 2013

View article titled, Optoelectronic measurement of x-ray synchrotron pulses: A proof of concept demonstration

Journal Articles

Phase and coherence extraction from a phased vertical cavity laser array

Matthew T. Johnson, Dominic F. Siriani, Joshua D. Sulkin, Kent D. Choquette

Appl. Phys. Lett. 101, 031116 (2012)

https://doi.org/10.1063/1.4736406

Published: July 2012

View article titled, Phase and coherence extraction from a phased vertical cavity laser array

Journal Articles

Physical understanding of cryogenic implant benefits for electrical junction stability

Fareen Adeni Khaja, Benjamin Colombeau, Thirumal Thanigaivelan, Deepak Ramappa, Todd Henry

Appl. Phys. Lett. 100, 112102 (2012)

https://doi.org/10.1063/1.3694275

Published: March 2012

View article titled, Physical understanding of cryogenic implant benefits for electrical junction stability

Journal Articles

Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors

Jong Tae Park, Jin Young Kim, Jean Pierre Colinge

Appl. Phys. Lett. 100, 083504 (2012)

https://doi.org/10.1063/1.3688245

Published: February 2012

View article titled, Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors

Journal Articles

In_0.53Ga_0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Ryosho Nakane, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi

Appl. Phys. Lett. 100, 073504 (2012)

https://doi.org/10.1063/1.3685505

Published: February 2012

View article titled, In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

NARROW

Topics

Ultrafast nonadiabatic dynamics of λ -DNA upon low energy proton irradiation

Post-growth modulation doping by ion implantation

Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation

Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors

Bright single photon sources in lateral silicon carbide light emitting diodes

High dopant activation of phosphorus in Ge crystal with high-temperature implantation and two-step microwave annealing

Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping

Electrostatically defined silicon quantum dots with counted antimony donor implants

In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

Vertical gate-all-around junctionless nanowire transistors with asymmetric diameters and underlap lengths

Stark shift and field ionization of arsenic donors in ²⁸Si-silicon-on-insulator structures

Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

Optoelectronic measurement of x-ray synchrotron pulses: A proof of concept demonstration

Phase and coherence extraction from a phased vertical cavity laser array

Physical understanding of cryogenic implant benefits for electrical junction stability

Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors

In_0.53Ga_0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

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