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Journal Articles

Strain engineering of vertical (110) InGaAs/InP quantum wells laterally grown on (001) SOI

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Zili Lei, Donghui Fu, Yu Han, Siyuan Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 182104 (2025)
https://doi.org/10.1063/5.0263330
Published: May 2025
View articletitled, Strain engineering of vertical (110) InGaAs/InP quantum wells laterally grown on (001) SOI
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Journal Articles

1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study

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Yitao Feng, Hong Zhou, Sami Alghamdi, Saud Wasly, Yue Hao, Jincheng Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 182101 (2025)
https://doi.org/10.1063/5.0260146
Published: May 2025
View articletitled, 1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study
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Journal Articles

High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping

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Yu-Hsin Chen, Jimy Encomendero, Chandrashekhar Savant, Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 142110 (2024)
https://doi.org/10.1063/5.0228253
Published: October 2024
View articletitled, High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping
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Journal Articles

Separate absorption, charge, and multiplication staircase avalanche photodiodes

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Adam A. Dadey, Andrew H. Jones, Stephen D. March, Seth R. Bank, Joe C. Campbell
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 081101 (2024)
https://doi.org/10.1063/5.0179470
Published: February 2024
View articletitled, Separate absorption, charge, and multiplication staircase avalanche photodiodes
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Journal Articles

Origin and suppression of kink effect in InP high electron mobility transistors at cryogenic temperatures

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Fu-gui Zhou, Rui-ze Feng, Shu-rui Cao, Zhi-yu Feng, Tong Liu, Yong-bo Su, Jing-yuan Shi, Wu-chang Ding, Zhi Jin
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 063503 (2024)
https://doi.org/10.1063/5.0169675
Published: February 2024
View articletitled, Origin and suppression of kink effect in InP high electron mobility transistors at cryogenic temperatures
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Journal Articles

Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance

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A. T. Newell, J. V. Logan, R. A. Carrasco, Z. M. Alsaad, C. P. Hains, J. M. Duran, G. Ariyawansa, G. Balakrishnan, D. Maestas, C. P. Morath, S. D. Hawkins, A. Hendrickson, P. T. Webster
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 171102 (2023)
https://doi.org/10.1063/5.0136409
Published: April 2023
View articletitled, Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance
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Journal Articles

Dark current in monolithic extended-SWIR GeSn PIN photodetectors

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M. R. M. Atalla, S. Assali, S. Koelling, A. Attiaoui, O. Moutanabbir
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 031103 (2023)
https://doi.org/10.1063/5.0124720
Published: January 2023
View articletitled, Dark current in monolithic extended-SWIR GeSn PIN photodetectors
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Journal Articles

Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy

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Tomasz Andrearczyk, Janusz Sadowski, Krzysztof Dybko, Tadeusz Figielski, Tadeusz Wosinski
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 242401 (2022)
https://doi.org/10.1063/5.0124673
Published: December 2022
View articletitled, Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy
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Journal Articles

Incoherent-to-coherent crossover in thermal transport through III–V alloy superlattices

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C. Perez, L. Avazpour, M. K. Eryilmaz, T. Earles, S. Ruder, V. Gopalan, D. Botez, I. Knezevic, B. Ramos-Alvarado, B. M. Foley, L. J. Mawst
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 232201 (2022)
https://doi.org/10.1063/5.0123711
Published: December 2022
View articletitled, Incoherent-to-coherent crossover in thermal transport through III–V alloy superlattices
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Includes: Supplementary data
Journal Articles

Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K

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Kohei Aoyama, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 232103 (2022)
https://doi.org/10.1063/5.0123299
Published: December 2022
View articletitled, Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K
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Journal Articles

Wideband Brillouin light scattering analysis of spin waves excited by a white-noise RF generator

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Lukáš Flajšman, Ondřej Wojewoda, Huajun Qin, Kristýna Davídková, Michal Urbánek, Sebastiaan van Dijken
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 232402 (2022)
https://doi.org/10.1063/5.0124764
Published: December 2022
View articletitled, Wideband Brillouin light scattering analysis of spin waves excited by a white-noise RF generator
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Includes: Supplementary data
Journal Articles

Universal rotation gauge via quantum anomalous Hall effect

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Alexey Shuvaev, Lei Pan, Lixuan Tai, Peng Zhang, Kang L. Wang, Andrei Pimenov
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 193101 (2022)
https://doi.org/10.1063/5.0105159
Published: November 2022
View articletitled, Universal rotation gauge via quantum anomalous Hall effect
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Includes: Supplementary data
Journal Articles

Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy

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A. Kusaba, S. Nitta, K. Shiraishi, T. Kuboyama, Y. Kangawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 162101 (2022)
https://doi.org/10.1063/5.0119783
Published: October 2022
View articletitled, Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy
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Includes: Supplementary data
Journal Articles

Transport evidence of the spin-polarized topological surface states of α-Sn grown on CdTe by molecular beam epitaxy

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Yuanfeng Ding, Chen Li, Jian Zhou, Hong Lu, Yan-Feng Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 093102 (2022)
https://doi.org/10.1063/5.0098585
Published: September 2022
View articletitled, Transport evidence of the spin-polarized topological surface states of α-Sn grown on CdTe by molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates

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Zexuan Zhang, Jimy Encomendero, Eungkyun Kim, Jashan Singhal, YongJin Cho, Kazuki Nomoto, Masato Toita, Huili Grace Xing, Debdeep Jena
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 082107 (2022)
https://doi.org/10.1063/5.0107159
Published: August 2022
View articletitled, High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates
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Includes: Supplementary data
Journal Articles

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes

Editor’s PickOpen Access
Kornelius Tetzner, Kingsley Egbo, Michael Klupsch, Ralph-Stephan Unger, Andreas Popp, Ta-Shun Chou, Saud Bin Anooz, Zbigniew Galazka, Achim Trampert, Oliver Bierwagen, Joachim Würfl
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 112110 (2022)
https://doi.org/10.1063/5.0083032
Published: March 2022
View articletitled, SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes
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Includes: Supplementary data
Journal Articles

2.7 μ m quantum cascade detector: Above band gap energy intersubband detection

Open Access
Miriam Giparakis, Hedwig Knötig, Hermann Detz, Maximilian Beiser, Werner Schrenk, Benedikt Schwarz, Gottfried Strasser, Aaron Maxwell Andrews
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 071104 (2022)
https://doi.org/10.1063/5.0076856
Published: February 2022
View articletitled, 2.7 μ m quantum cascade detector: Above band gap energy intersubband detection
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Journal Articles

Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization

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A. Kusaba, Y. Kangawa, T. Kuboyama, A. Oshiyama
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 021602 (2022)
https://doi.org/10.1063/5.0078660
Published: January 2022
View articletitled, Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization
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Journal Articles

Suspended AlGaAs waveguide for integrated nonlinear photonics

Open Access
Hui Cong, Bo Yang, Wenqi Wei, Jianhuan Wang, Qi Feng, Zihao Wang, Ting Wang, Xuhan Guo, Jianjun Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 133502 (2021)
https://doi.org/10.1063/5.0063630
Published: September 2021
View articletitled, Suspended AlGaAs waveguide for integrated nonlinear photonics
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Journal Articles

SAW gas sensor based on extremely thin strain-engineered K0.7Na0.3NbO3 films

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Sijia Liang, Dennis Finck, Marc W. Neis, Jutta Schwarzkopf, Dirk Mayer, Roger Wördenweber
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 112905 (2021)
https://doi.org/10.1063/5.0060796
Published: September 2021
View articletitled, SAW gas sensor based on extremely thin strain-engineered K0.7Na0.3NbO3 films
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