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Journal Articles

A room temperature exchange bias effect caused by the coexisting martensitic phase structures in Ni₅₀Mn₃₈Sb_12−xGa_x polycrystalline Heusler alloys

Fanghua Tian, Tieyan Chang, Qizhong Zhao, Jiale Guo, Long Xian, Kaiyan Cao, Zhiyong Dai, Yin Zhang, Chao Zhou, Sen Yang

Appl. Phys. Lett. 123, 232402 (2023)

https://doi.org/10.1063/5.0178839

Published: December 2023

View article titled, A room temperature exchange bias effect caused by the coexisting martensitic phase structures in Ni50Mn38Sb12−xGax polycrystalline Heusler alloys

Includes: Supplementary data

Journal Articles

Boosting domain wall velocity and stability in ferrimagnetic GdFe nanowires by applying laser-annealing process

Mojtaba Mohammadi, Satoshi Sumi, Kenji Tanabe, Hiroyuki Awano

Appl. Phys. Lett. 123, 202403 (2023)

https://doi.org/10.1063/5.0165790

Published: November 2023

View article titled, Boosting domain wall velocity and stability in ferrimagnetic GdFe nanowires by applying laser-annealing process

Journal Articles

A nonvolatile memory element for integration with superconducting electronics

C. Pot, W. F. Holmes-Hewett, E.-M. Anton, J. D. Miller, B. J. Ruck, H. J. Trodahl

Appl. Phys. Lett. 123, 202401 (2023)

https://doi.org/10.1063/5.0175432

Published: November 2023

View article titled, A nonvolatile memory element for integration with superconducting electronics

Includes: Supplementary data

Journal Articles

Enhanced spin Hall conductivity and charge to spin conversion efficiency in strained orthorhombic SnSe through orbital selective hybridization

E. Ketkar, Gaurav K. Shukla, Seung-Cheol Lee, Satadeep Bhattacharjee, Sanjay Singh

Appl. Phys. Lett. 123, 182403 (2023)

https://doi.org/10.1063/5.0173339

Published: October 2023

View article titled, Enhanced spin Hall conductivity and charge to spin conversion efficiency in strained orthorhombic SnSe through orbital selective hybridization

Includes: Supplementary data

Journal Articles

Spin reorientation induced large spin memory loss at Py/Pd interface

Zhihao Li, Jingxin Li, Yihao Wang, Junbo Li, Tian Li, Teng Li, Feng Chen, Wei Tong, Liang Cao, Yimin Xiong

Appl. Phys. Lett. 123, 112407 (2023)

https://doi.org/10.1063/5.0166050

Published: September 2023

View article titled, Spin reorientation induced large spin memory loss at Py/Pd interface

Includes: Supplementary data

Journal Articles

Lattice structure dependence of laser-induced ultrafast magnetization switching in ferrimagnets

J. A. Vélez, R. M. Otxoa, U. Atxitia

Appl. Phys. Lett. 123, 112402 (2023)

https://doi.org/10.1063/5.0169387

Published: September 2023

View article titled, Lattice structure dependence of laser-induced ultrafast magnetization switching in ferrimagnets

Journal Articles

Femtosecond laser modification of vanadium dioxide for color display applications

Ran-Ran Xie, Han Zhu, Ruofei Xing, Lingrui Chu, Zhuoqun Wang, Ruyi Xia, Wenxiao Zhao, Yuechen Jia, Yanxue Chen, Saulius Juodkazis, Feng Chen

Appl. Phys. Lett. 123, 093101 (2023)

https://doi.org/10.1063/5.0166212

Published: August 2023

View article titled, Femtosecond laser modification of vanadium dioxide for color display applications

Journal Articles

Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y₂O₃ film‐based memristors

Yuanyuan Zhu, Zicong Guo, Mengyao Chen, Pan Zhang, Peng Shao, Daobin Luo, Youqing Wang, Yong Liu, Rui Xiong, Hongjun Wang

Appl. Phys. Lett. 123, 083503 (2023)

https://doi.org/10.1063/5.0157680

Published: August 2023

View article titled, Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y2O3 film‐based memristors

Includes: Supplementary data

Journal Articles

Ferroelectric and negative piezoelectric properties in oxyhydroxide monolayers γ -XOOH (X = Al, Ga, and In)

Xuli Cheng, Shaowen Xu, Chao Liu, Yaning Cui, Wenbin Ouyang, Fanhao Jia, Wei Wu, Wei Ren

Appl. Phys. Lett. 123, 072904 (2023)

https://doi.org/10.1063/5.0164215

Published: August 2023

View article titled, Ferroelectric and negative piezoelectric properties in oxyhydroxide monolayers γ -XOOH (X = Al, Ga, and In)

Includes: Supplementary data

Journal Articles

Multiple modulation of magnetism in two-dimensional FeCl₂/In₂Se₃ van der Waals heterostructure

Chao Jin, Chang Liu, Fengzhu Ren, Bing Wang, Wei Sun, Minglei Jia, Qinfen Gu

Appl. Phys. Lett. 123, 042903 (2023)

https://doi.org/10.1063/5.0158281

Published: July 2023

View article titled, Multiple modulation of magnetism in two-dimensional FeCl2/In2Se3 van der Waals heterostructure

Includes: Supplementary data

Journal Articles

Time-resolved photo-magnetic switching of bubble domains in ferrimagnetic garnets

T. Zalewski, A. Maziewski, A. Stupakiewicz

Appl. Phys. Lett. 123, 032402 (2023)

https://doi.org/10.1063/5.0157894

Published: July 2023

View article titled, Time-resolved photo-magnetic switching of bubble domains in ferrimagnetic garnets

Journal Articles

Ferroelectric-controlled all MXene nonvolatile flexible memory devices for data storage application

Sabeen Fatima, Rabia Tahir, Syed Rizwan

Appl. Phys. Lett. 123, 013503 (2023)

https://doi.org/10.1063/5.0141575

Published: July 2023

View article titled, Ferroelectric-controlled all MXene nonvolatile flexible memory devices for data storage application

Journal Articles

Huge perpendicular magnetic anisotropy in a 12-fold planar hypercoordinate W@B₁₂(NCCN)₃ monolayer

Jianpei Xing, Bo Zhao, Xin Qu, Xue Jiang, Jijun Zhao

Appl. Phys. Lett. 122, 231901 (2023)

https://doi.org/10.1063/5.0152175

Published: June 2023

View article titled, Huge perpendicular magnetic anisotropy in a 12-fold planar hypercoordinate W@B12(NCCN)3 monolayer

Includes: Supplementary data

Journal Articles

Localized manipulation of spoof surface acoustic skyrmions with deep-subwavelength gradient structures

Wen-Jun Sun, Hong-Wei Wu, Ping Hu, Nong Zhou, Xue Chen, Yong-Qiang Yang, Zong-Qiang Sheng

Appl. Phys. Lett. 122, 202201 (2023)

https://doi.org/10.1063/5.0145611

Published: May 2023

View article titled, Localized manipulation of spoof surface acoustic skyrmions with deep-subwavelength gradient structures

Includes: Supplementary data

Journal Articles

Achievement of ten-level optical storage using Ge₂Sb₂Te₅–nAg bi-layer composite structure induced by nanosecond pulsed laser

Q. L. Ma, Y. Z. Zhang, F. R. Liu, Q. Y. Chen, K. Rao

Appl. Phys. Lett. 122, 161701 (2023)

https://doi.org/10.1063/5.0138047

Published: April 2023

View article titled, Achievement of ten-level optical storage using Ge2Sb2Te5–nAg bi-layer composite structure induced by nanosecond pulsed laser

Includes: Supplementary data

Journal Articles

Helimagnet-based nonvolatile multi-bit memory units

Rabiul Islam, Peng Li, Marijan Beg, Manoj Sachdev, Guo-Xing Miao

Appl. Phys. Lett. 122, 152407 (2023)

https://doi.org/10.1063/5.0147066

Published: April 2023

View article titled, Helimagnet-based nonvolatile multi-bit memory units

Journal Articles

Fast Bienenstock–Cooper–Munro rule with tunable threshold realized in ferroelectric tunnel junction for neuromorphic computing

Xiaomi Shen, Caihong Jia, Weifeng Zhang

Appl. Phys. Lett. 122, 053501 (2023)

https://doi.org/10.1063/5.0137339

Published: January 2023

View article titled, Fast Bienenstock–Cooper–Munro rule with tunable threshold realized in ferroelectric tunnel junction for neuromorphic computing

Journal Articles

Observation of localized acoustic skyrmions

Ping Hu, Hong-Wei Wu, Wen-Jun Sun, Nong Zhou, Xue Chen, Yong-Qiang Yang, Zong-Qiang Sheng

Appl. Phys. Lett. 122, 022201 (2023)

https://doi.org/10.1063/5.0131777

Published: January 2023

View article titled, Observation of localized acoustic skyrmions

Includes: Supplementary data

Journal Articles

High-speed, low-voltage programmable/erasable flexible 2-bit organic transistor nonvolatile memory with a monolayer buffered ferroelectric terpolymer insulator

Meili Xu, Weihao Qi, Wenfa Xie, Wei Wang

Appl. Phys. Lett. 121, 083502 (2022)

https://doi.org/10.1063/5.0105190

Published: August 2022

View article titled, High-speed, low-voltage programmable/erasable flexible 2-bit organic transistor nonvolatile memory with a monolayer buffered ferroelectric terpolymer insulator

Includes: Supplementary data

Journal Articles

Multifunctionality in ferromagnetic shape memory alloy-based resistive switching memory for flexible ReRAM application

Pradeep Kumar, Davinder Kaur

Appl. Phys. Lett. 121, 043503 (2022)

https://doi.org/10.1063/5.0096679

Published: July 2022

View article titled, Multifunctionality in ferromagnetic shape memory alloy-based resistive switching memory for flexible ReRAM application

Includes: Supplementary data

NARROW

Topics

A room temperature exchange bias effect caused by the coexisting martensitic phase structures in Ni₅₀Mn₃₈Sb_12−xGa_x polycrystalline Heusler alloys

Boosting domain wall velocity and stability in ferrimagnetic GdFe nanowires by applying laser-annealing process

A nonvolatile memory element for integration with superconducting electronics

Enhanced spin Hall conductivity and charge to spin conversion efficiency in strained orthorhombic SnSe through orbital selective hybridization

Spin reorientation induced large spin memory loss at Py/Pd interface

Lattice structure dependence of laser-induced ultrafast magnetization switching in ferrimagnets

Femtosecond laser modification of vanadium dioxide for color display applications

Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y₂O₃ film‐based memristors

Ferroelectric and negative piezoelectric properties in oxyhydroxide monolayers γ -XOOH (X = Al, Ga, and In)

Multiple modulation of magnetism in two-dimensional FeCl₂/In₂Se₃ van der Waals heterostructure

Time-resolved photo-magnetic switching of bubble domains in ferrimagnetic garnets

Ferroelectric-controlled all MXene nonvolatile flexible memory devices for data storage application

Huge perpendicular magnetic anisotropy in a 12-fold planar hypercoordinate W@B₁₂(NCCN)₃ monolayer

Localized manipulation of spoof surface acoustic skyrmions with deep-subwavelength gradient structures

Achievement of ten-level optical storage using Ge₂Sb₂Te₅–nAg bi-layer composite structure induced by nanosecond pulsed laser

Helimagnet-based nonvolatile multi-bit memory units

Fast Bienenstock–Cooper–Munro rule with tunable threshold realized in ferroelectric tunnel junction for neuromorphic computing

Observation of localized acoustic skyrmions

High-speed, low-voltage programmable/erasable flexible 2-bit organic transistor nonvolatile memory with a monolayer buffered ferroelectric terpolymer insulator

Multifunctionality in ferromagnetic shape memory alloy-based resistive switching memory for flexible ReRAM application