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Journal Articles

Spin transfer torque switching in double magnetic tunnel junctions based on dual MgO layers

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G. Mihajlović, W. Jung, R. V. Chopdekar, J. Lille, M. K. Grobis
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022403 (2025)
https://doi.org/10.1063/5.0241616
Published: January 2025
View articletitled, Spin transfer torque switching in double magnetic tunnel junctions based on dual MgO layers
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Journal Articles

Engineering oxygen vacancy-induced interface trap memristive effect in selenium-implanted gallium oxide

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Yimin Liao, Zhigao Xie, Hanzhao Song, Jierui Xue, Chee-Keong Tan
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 192106 (2024)
https://doi.org/10.1063/5.0233137
Published: November 2024
View articletitled, Engineering oxygen vacancy-induced interface trap memristive effect in selenium-implanted gallium oxide
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Journal Articles

Hafnia-based neuromorphic devices

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Hai Zhong, Kuijuan Jin, Chen Ge
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 150501 (2024)
https://doi.org/10.1063/5.0226206
Published: October 2024
View articletitled, Hafnia-based neuromorphic devices
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Wide-bandgap semiconductor SiC-based memristors fabricated entirely by electron beam evaporation for artificial synapses

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Haiming Qin, Shilei Sun, Nan He, Pengchao Zhang, Shuai Chen, Cong Han, Rui Hu, Jiawen Wu, Weijing Shao, Mohamed Saadi, Hao Zhang, Youde Hu, Xinpeng Wang, Yi Liu, Liang Zeng, Yi Tong
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 143502 (2024)
https://doi.org/10.1063/5.0230471
Published: October 2024
View articletitled, Wide-bandgap semiconductor SiC-based memristors fabricated entirely by electron beam evaporation for artificial synapses
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Self-rectifying memristors with high rectification ratio and dynamic linearity for in-memory computing

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Guobin Zhang, Zijian Wang, Xuemeng Fan, Zhen Wang, Pengtao Li, Qi Luo, Dawei Gao, Qing Wan, Yishu Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 133501 (2024)
https://doi.org/10.1063/5.0225833
Published: September 2024
View articletitled, Self-rectifying memristors with high rectification ratio and dynamic linearity for in-memory computing
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Journal Articles

A cold-electrode metal–oxide resistive random access memory

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Jifang Cao, Bing Chen, Zhijiang Wang, Junru Qu, Jiayi Zhao, Rongzong Shen, Xiao Yu, Zhiping Yu, Fei Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 013503 (2024)
https://doi.org/10.1063/5.0214593
Published: July 2024
View articletitled, A cold-electrode metal–oxide resistive random access memory
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Journal Articles

Double perovskite Bi2FeMnO6/TiO2 thin film heterostructure device for neuromorphic computing

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Dong-Liang Li, Wen-Min Zhong, Xin-Gui Tang, Qin-yu He, Yan-Ping Jiang, Qiu-Xiang Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 253501 (2024)
https://doi.org/10.1063/5.0205429
Published: June 2024
View articletitled, Double perovskite Bi2FeMnO6/TiO2 thin film heterostructure device for neuromorphic computing
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Journal Articles

Rapid synthesis of MoS2 for transistors and memristors

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Weiyi Lin
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 241901 (2024)
https://doi.org/10.1063/5.0196644
Published: June 2024
View articletitled, Rapid synthesis of MoS2 for transistors and memristors
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Journal Articles

A tantalum oxide based memristive neuron device for anomaly detection application

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Zuheng Wu, Yang Hu, Zhe Feng, Jianxun Zou, Wenbin Guo, Jian Lu, Tuo Shi, Su Tan, Zeqing Wang, Ruihan Yu, Yunlai Zhu, Zuyu Xu, Yuehua Dai
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 233505 (2024)
https://doi.org/10.1063/5.0212850
Published: June 2024
View articletitled, A tantalum oxide based memristive neuron device for anomaly detection application
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Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology

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Kexiang Wang, Jie Lu, Zeyang Xiang, Ranping Li, Zixuan Wang, Huilin Jin, Ran Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 203503 (2024)
https://doi.org/10.1063/5.0212383
Published: May 2024
View articletitled, Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology
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Journal Articles

Cu/MgO-based resistive random access memory for neuromorphic applications

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Gao Hu, Zhendi Yu, Hao Qu, Youhong Yuan, Dengfeng Li, Mingmin Zhu, Jinming Guo, Chen Xia, Xunying Wang, Baoyuan Wang, Guokun Ma, Hao Wang, Wenjing Dong
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 142109 (2024)
https://doi.org/10.1063/5.0189599
Published: April 2024
View articletitled, Cu/MgO-based resistive random access memory for neuromorphic applications
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Journal Articles

Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction

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Saransh Shrivastava, Hsiao-Ni Chi, Stephen Ekaputra Limantoro, Hans Juliano, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 133503 (2024)
https://doi.org/10.1063/5.0199385
Published: March 2024
View articletitled, Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction
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Includes: Supplementary data
Journal Articles

Exploring charge hopping transport in amorphous HfO2: An approach combing ab initio methods and model Hamiltonian

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Youssef Hirchaou, Benoît Sklénard, Wolfgang Goes, Philippe Blaise, François Triozon, Jing Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 052108 (2024)
https://doi.org/10.1063/5.0187779
Published: February 2024
View articletitled, Exploring charge hopping transport in amorphous HfO2: An approach combing ab initio methods and model Hamiltonian
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Includes: Supplementary data
Journal Articles

Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM

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Mengyi Qian, Haixia Gao, Yiwei Duan, Jingshu Guo, Yifan Bai, Shilong Zhu, Xiaohua Ma, Yintang Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 033501 (2023)
https://doi.org/10.1063/5.0155262
Published: July 2023
View articletitled, Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM
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Includes: Supplementary data
Journal Articles

Perspective on unconventional computing using magnetic skyrmions

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Oscar Lee, Robin Msiska, Maarten A. Brems, Mathias Kläui, Hidekazu Kurebayashi, Karin Everschor-Sitte
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 260501 (2023)
https://doi.org/10.1063/5.0148469
Published: June 2023
View articletitled, Perspective on unconventional computing using magnetic skyrmions
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Journal Articles

Performance degradation and I–V model of TiO2-film-based resistive switching memory under proton irradiation

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Hongjia Song, Yingdong Liu, Jiaqi Yan, Xiangli Zhong, Jinbin Wang, Hongxia Guo
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 212102 (2023)
https://doi.org/10.1063/5.0147593
Published: May 2023
View articletitled, Performance degradation and I–V model of TiO2-film-based resistive switching memory under proton irradiation
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Includes: Supplementary data
Journal Articles

CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems

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Aleksandra A. Koroleva, Dmitry S. Kuzmichev, Maxim G. Kozodaev, Ivan V. Zabrosaev, Evgeny V. Korostylev, Andrey M. Markeev
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 022905 (2023)
https://doi.org/10.1063/5.0138218
Published: January 2023
View articletitled, CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems
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Includes: Supplementary data
Journal Articles

Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processing

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Om Kumar Prasad, Sridhar Chandrasekaran, Chin-Han Chung, Kow-Ming Chang, Firman Mangasa Simanjuntak
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 233505 (2022)
https://doi.org/10.1063/5.0123583
Published: December 2022
View articletitled, Annealing induced cation diffusion in TaOx-based memristor and its compatibility for back-end-of-line post-processing
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Includes: Supplementary data
Journal Articles

Conductive mechanism in memristor at the thinnest limit: The case based on monolayer boron nitride

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Xiao-Dong Li, Nian-Ke Chen, Bai-Qian Wang, Xian-Bin Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 073505 (2022)
https://doi.org/10.1063/5.0098120
Published: August 2022
View articletitled, Conductive mechanism in memristor at the thinnest limit: The case based on monolayer boron nitride
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Includes: Supplementary data
Journal Articles

Progress and challenges on 3D tubular structures and devices of 2D materials

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Binmin Wu, Ziyu Zhang, Chao Wang, Enming Song, Jizhai Cui, Gaoshan Huang, Peng Zhou, Zengfeng Di, Yongfeng Mei
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 060503 (2022)
https://doi.org/10.1063/5.0098838
Published: August 2022
View articletitled, Progress and challenges on 3D tubular structures and devices of 2D materials
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