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Journal Articles

Graphene-enhanced ferroelectric domain wall high-output memristor

Felix Risch, Ali Gilani, Sadegh Kamaei, Adrian M. Ionescu, Igor Stolichnov

Appl. Phys. Lett. 125, 152902 (2024)

https://doi.org/10.1063/5.0232620

Published: October 2024

View article titled, Graphene-enhanced ferroelectric domain wall high-output memristor

Journal Articles

Initialization-free multistate memristor: Synergy of spin–orbit torque and magnetic fields

Raghvendra Posti, Chirag Kalouni, Dhananjay Tiwari, Debangsu Roy

Appl. Phys. Lett. 125, 153501 (2024)

https://doi.org/10.1063/5.0226485

Published: October 2024

View article titled, Initialization-free multistate memristor: Synergy of spin–orbit torque and magnetic fields

Journal Articles

MoS₂ quantum capacitance for memcapacitor

Wei Guo, Jialu Li, Yadong Qiao, Chenya Feng, Li Yao, Fadi Wang, Yuhang Wang, Fengping Wang

Appl. Phys. Lett. 125, 142107 (2024)

https://doi.org/10.1063/5.0218765

Published: October 2024

View article titled, MoS2 quantum capacitance for memcapacitor

Journal Articles

Wide-bandgap semiconductor SiC-based memristors fabricated entirely by electron beam evaporation for artificial synapses

Haiming Qin, Shilei Sun, Nan He, Pengchao Zhang, Shuai Chen, Cong Han, Rui Hu, Jiawen Wu, Weijing Shao, Mohamed Saadi, Hao Zhang, Youde Hu, Xinpeng Wang, Yi Liu, Liang Zeng, Yi Tong

Appl. Phys. Lett. 125, 143502 (2024)

https://doi.org/10.1063/5.0230471

Published: October 2024

View article titled, Wide-bandgap semiconductor SiC-based memristors fabricated entirely by electron beam evaporation for artificial synapses

Journal Articles

Self-rectifying memristors with high rectification ratio and dynamic linearity for in-memory computing

Guobin Zhang, Zijian Wang, Xuemeng Fan, Zhen Wang, Pengtao Li, Qi Luo, Dawei Gao, Qing Wan, Yishu Zhang

Appl. Phys. Lett. 125, 133501 (2024)

https://doi.org/10.1063/5.0225833

Published: September 2024

View article titled, Self-rectifying memristors with high rectification ratio and dynamic linearity for in-memory computing

Journal Articles

Interface modeling analysis using density functional theory in highly reliable Pt/HfO₂/TaO_x/Ta self-rectifying memristor

Sheng-Guang Ren, Ge-Qi Mao, Yi-Bai Xue, Yu Zhang, Jia-Yi Sun, Wen-Bin Zuo, Yi Li, Kan-Hao Xue, Xiang-Shui Miao

Appl. Phys. Lett. 125, 123503 (2024)

https://doi.org/10.1063/5.0227603

Published: September 2024

View article titled, Interface modeling analysis using density functional theory in highly reliable Pt/HfO2/TaOx/Ta self-rectifying memristor

Journal Articles

Modulating conductive filaments via thermally stable bilayer organic memristor

Yiming Zheng, Xiangyu Guo, Jiandong Jiang, Yujun Fu, Qi Wang, Deyan He

Appl. Phys. Lett. 125, 083506 (2024)

https://doi.org/10.1063/5.0221763

Published: August 2024

View article titled, Modulating conductive filaments via thermally stable bilayer organic memristor

Journal Articles

Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli

Jie Lu, Zeyang Xiang, Kexiang Wang, Ziyu Wang, Si Shi, Zuming Liu, Xiran Chen, Xinyu Hu, Ran Jiang

Appl. Phys. Lett. 125, 083508 (2024)

https://doi.org/10.1063/5.0224947

Published: August 2024

View article titled, Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli

Journal Articles

Impact of inert electrode on the volatility and non-volatility switching behavior of SiO₂-based conductive bridge random access memory devices

C. Tsioustas, P. Bousoulas, G. Kleitsiotis, S. D. Mantas, D. Tsoukalas

Appl. Phys. Lett. 125, 023508 (2024)

https://doi.org/10.1063/5.0209676

Published: July 2024

View article titled, Impact of inert electrode on the volatility and non-volatility switching behavior of SiO2-based conductive bridge random access memory devices

Journal Articles

Electronically controlled left-handed metamaterial based on memristor/ferrite multilayer at microwaves

Aleksey Girich, Sinan Kazan, Bulat Rameev, Sergey Tarapov

Appl. Phys. Lett. 125, 011701 (2024)

https://doi.org/10.1063/5.0204174

Published: July 2024

View article titled, Electronically controlled left-handed metamaterial based on memristor/ferrite multilayer at microwaves

Journal Articles

Surface engineering of FAPbI₃ based organic–inorganic hybrid perovskite for memristors

Ji Hyeon Lee, Eun Soo Shim, Yeong Eun Kim, Jea Woong Jo

Appl. Phys. Lett. 124, 263301 (2024)

https://doi.org/10.1063/5.0214263

Published: June 2024

View article titled, Surface engineering of FAPbI3 based organic–inorganic hybrid perovskite for memristors

Journal Articles

Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application

Divya Kaushik, Harshit Sharma, Nitish Saini, C. K. Suman, Ritu Srivastava

Appl. Phys. Lett. 124, 233506 (2024)

https://doi.org/10.1063/5.0208254

Published: June 2024

View article titled, Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application

Journal Articles

The degradation mechanism and stability enhancement of GaSe lateral memristors

Junhao Tang, Runze Zhan, Enzi Chen, Qing Zhu, Weijian Li, Dawei Li, Zhenye Lu, Xi Wan, Kun Chen

Appl. Phys. Lett. 124, 123102 (2024)

https://doi.org/10.1063/5.0190848

Published: March 2024

View article titled, The degradation mechanism and stability enhancement of GaSe lateral memristors

Includes: Supplementary data

Journal Articles

A temperature sensing based Na_0.5Bi_0.5TiO₃ ferroelectric memristor device for artificial neural systems

Lei Zhou, Yifei Pei, Changliang Li, Hui He, Chao Liu, Yue Hou, Haoyuan Tian, Jianxin Guo, Baoting Liu, Xiaobing Yan

Appl. Phys. Lett. 124, 093507 (2024)

https://doi.org/10.1063/5.0190861

Published: February 2024

View article titled, A temperature sensing based Na0.5Bi0.5TiO3 ferroelectric memristor device for artificial neural systems

Includes: Supplementary data

Journal Articles

The filaments control for tunning digital resistive switching in data storage application and analog behavior as an artificial synapse with CsPbBr₃-based memristor

Yuanyuan Zhu, Mengyao Chen, Hongbing Lu, Pengtao Mi, Daobin Luo, Youqing Wang, Yong Liu, Rui Xiong, Hongjun Wang

Appl. Phys. Lett. 124, 063504 (2024)

https://doi.org/10.1063/5.0188561

Published: February 2024

View article titled, The filaments control for tunning digital resistive switching in data storage application and analog behavior as an artificial synapse with CsPbBr3-based memristor

Includes: Supplementary data

Journal Articles

Polygon Boolean operations and physical unclonable functions implemented by an Ag-embedded sodium-alginate-based memristor for image encryption/decryption

Jiajuan Shi, Jiaqi Han, Jingyao Bian, Yongjun Dong, Ya Lin, Yifan Zhang, Ye Tao, Xiaoning Zhao, Guozhong Xing, Zhongqiang Wang, Haiyang Xu, Yichun Liu

Appl. Phys. Lett. 124, 063502 (2024)

https://doi.org/10.1063/5.0191005

Published: February 2024

View article titled, Polygon Boolean operations and physical unclonable functions implemented by an Ag-embedded sodium-alginate-based memristor for image encryption/decryption

Includes: Supplementary data

Journal Articles

Domain-modified engineering for low-power resistive switching in ferroelectric diodes

Jianguo Niu, Yaoxiang Jiang, Xiaohui Shi, Donglai Xue, Bo Yang, Shifeng Zhao

Appl. Phys. Lett. 124, 043503 (2024)

https://doi.org/10.1063/5.0187616

Published: January 2024

View article titled, Domain-modified engineering for low-power resistive switching in ferroelectric diodes

Includes: Supplementary data

Journal Articles

High-temperature tolerant TaO_X/HfO₂ self-rectifying memristor array with robust retention and ultra-low switching energy

Sheng-Guang Ren, Yi-Bai Xue, Yu Zhang, Wen-Bin Zuo, Yi Li, Xiang-Shui Miao

Appl. Phys. Lett. 124, 033501 (2024)

https://doi.org/10.1063/5.0190308

Published: January 2024

View article titled, High-temperature tolerant TaOX/HfO2 self-rectifying memristor array with robust retention and ultra-low switching energy

Journal Articles

Two‐dimensional α -In₂Se₃ memory devices from resistive switching to synaptic plasticity

Ting Ma, Shuangshuang Han, Di Yang, Yun Ye, Ying Liu, Zhitao Shen, Fumin Li, Huilin Li, Chong Chen

Appl. Phys. Lett. 123, 263503 (2023)

https://doi.org/10.1063/5.0180935

Published: December 2023

View article titled, Two‐dimensional α -In2Se3 memory devices from resistive switching to synaptic plasticity

Includes: Supplementary data

Journal Articles

Neuromorphic memristor based on amorphous InAlZnO film for synaptic behavior simulation

Yimeng Xu, Xu Han, Weidong Xu, Caiyang Ye, Ziyi Dai, Xianjin Feng, Kai Qian

Appl. Phys. Lett. 123, 253503 (2023)

https://doi.org/10.1063/5.0180651

Published: December 2023

View article titled, Neuromorphic memristor based on amorphous InAlZnO film for synaptic behavior simulation

Includes: Supplementary data

NARROW

Topics

Graphene-enhanced ferroelectric domain wall high-output memristor

Initialization-free multistate memristor: Synergy of spin–orbit torque and magnetic fields

MoS₂ quantum capacitance for memcapacitor

Wide-bandgap semiconductor SiC-based memristors fabricated entirely by electron beam evaporation for artificial synapses

Self-rectifying memristors with high rectification ratio and dynamic linearity for in-memory computing

Interface modeling analysis using density functional theory in highly reliable Pt/HfO₂/TaO_x/Ta self-rectifying memristor

Modulating conductive filaments via thermally stable bilayer organic memristor

Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli

Impact of inert electrode on the volatility and non-volatility switching behavior of SiO₂-based conductive bridge random access memory devices

Electronically controlled left-handed metamaterial based on memristor/ferrite multilayer at microwaves

Surface engineering of FAPbI₃ based organic–inorganic hybrid perovskite for memristors

Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application

The degradation mechanism and stability enhancement of GaSe lateral memristors

A temperature sensing based Na_0.5Bi_0.5TiO₃ ferroelectric memristor device for artificial neural systems

The filaments control for tunning digital resistive switching in data storage application and analog behavior as an artificial synapse with CsPbBr₃-based memristor

Polygon Boolean operations and physical unclonable functions implemented by an Ag-embedded sodium-alginate-based memristor for image encryption/decryption

Domain-modified engineering for low-power resistive switching in ferroelectric diodes

High-temperature tolerant TaO_X/HfO₂ self-rectifying memristor array with robust retention and ultra-low switching energy

Two‐dimensional α -In₂Se₃ memory devices from resistive switching to synaptic plasticity

Neuromorphic memristor based on amorphous InAlZnO film for synaptic behavior simulation

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