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Journal Articles

AlN-based unipolar memristors with symmetrical Al electrodes: Preparation, characterization, and test

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Haiming Qin, Nan He, Cong Han, Yu Wang, Rui Hu, Jiawen Wu, Weijing Shao, Hanbing Fang, Hao Zhang, Xinpeng Wang, Yi Liu, Yi Tong
Journal: Applied Physics Letters
Appl. Phys. Lett. 127, 023501 (2025)
https://doi.org/10.1063/5.0279814
Published: July 2025
View article titled, AlN-based unipolar memristors with symmetrical Al electrodes: Preparation, characterization, and test
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Journal Articles

A high speed response Nafion-based non-volatile RF switch

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Yehui Shen, Lejie Sheng, Yang Song, Tianyu Zhang, Bowen Cui, Zixuan Wang, Zhikuang Cai, Xianwu Tang, Rongqing Xu, Guangxu Shen, Gangyi Zhu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 242103 (2025)
https://doi.org/10.1063/5.0270011
Published: June 2025
View article titled, A high speed response Nafion-based non-volatile RF switch
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Journal Articles

Transparent multifunctional memristor based on amorphous InAlZnO for biomimetic sensing system

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Yimeng Xu, Caiyang Ye, Wenyao Jiao, Ziyi Dai, Kai Qian
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 213506 (2025)
https://doi.org/10.1063/5.0251101
Published: May 2025
View article titled, Transparent multifunctional memristor based on amorphous InAlZnO for biomimetic sensing system
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Journal Articles

Interface engineering modulation of ferroelectric synapses for high-precision neuromorphic computing

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Hao Liu, Yan Wang, Wenshuo Wu, Minghao Zhang, Jie Su
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 171902 (2025)
https://doi.org/10.1063/5.0260692
Published: April 2025
View article titled, Interface engineering modulation of ferroelectric synapses for high-precision neuromorphic computing
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Journal Articles

Deep ultraviolet optoelectronic memristors based on gallium oxide for biomimetic visual processing and neuromorphic memory applications

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Yijie Liang, Fan Zhang, Song Qi, Dianmeng Dong, Xiaotong Ma, Yongtao Yang, Weihua Tang, Hui Yang, Zhenping Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 141102 (2025)
https://doi.org/10.1063/5.0259184
Published: April 2025
View article titled, Deep ultraviolet optoelectronic memristors based on gallium oxide for biomimetic visual processing and neuromorphic memory applications
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Journal Articles

Biomimetic spider web sensor designed with memristive oscillators for location-resolved disturbance detection

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Wenbo Sun, Yungang Li, Christy G. Jenson, S. M. Sadaf, Qiang Yu, Yiwen Zhang, Xinjun Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 123504 (2025)
https://doi.org/10.1063/5.0249837
Published: March 2025
View article titled, Biomimetic spider web sensor designed with memristive oscillators for location-resolved disturbance detection
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Journal Articles

Biorealistic response in a technology-compatible graphene synaptic transistor

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Anastasia Chouprik, Elizaveta Guberna, Islam Mutaev, Ilya Margolin, Evgeny Guberna, Maxim Rybin
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 123502 (2025)
https://doi.org/10.1063/5.0243814
Published: March 2025
View article titled, Biorealistic response in a technology-compatible graphene synaptic transistor
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Journal Articles

Exploring the potential of 2D PtTe2-based memristors for neuromorphic computing

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Xiaojuan Lian, Xin Zhang, Shiyu Li, Bingxin Ding, Jiyuan Jiang, Yunbo Zhang, Yufeng Guo, Zhikuang Cai, Lei Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062108 (2025)
https://doi.org/10.1063/5.0244591
Published: February 2025
View article titled, Exploring the potential of 2D PtTe2-based memristors for neuromorphic computing
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Journal Articles

Artificial mechano-nociceptive system based on transparent ITO/AlN/ITO memristor nociceptor neuron

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Caiyang Ye, Yimeng Xu, Ziyi Dai, Zede Zhu, Chao Li, Kai Qian
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 213501 (2024)
https://doi.org/10.1063/5.0235758
Published: November 2024
View article titled, Artificial mechano-nociceptive system based on transparent ITO/AlN/ITO memristor nociceptor neuron
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Journal Articles

Engineering oxygen vacancy-induced interface trap memristive effect in selenium-implanted gallium oxide

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Yimin Liao, Zhigao Xie, Hanzhao Song, Jierui Xue, Chee-Keong Tan
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 192106 (2024)
https://doi.org/10.1063/5.0233137
Published: November 2024
View article titled, Engineering oxygen vacancy-induced interface trap memristive effect in selenium-implanted gallium oxide
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Journal Articles

CdSe quantum dots photoelectric memristors for simulating biological visual system behavior

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Hui He, Zhicheng Zeng, Yifei Pei, Xiangyang Liu, Xiaobing Yan
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 192102 (2024)
https://doi.org/10.1063/5.0232757
Published: November 2024
View article titled, CdSe quantum dots photoelectric memristors for simulating biological visual system behavior
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Journal Articles

Graphene-enhanced ferroelectric domain wall high-output memristor

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Felix Risch, Ali Gilani, Sadegh Kamaei, Adrian M. Ionescu, Igor Stolichnov
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 152902 (2024)
https://doi.org/10.1063/5.0232620
Published: October 2024
View article titled, Graphene-enhanced ferroelectric domain wall high-output memristor
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Journal Articles

Initialization-free multistate memristor: Synergy of spin–orbit torque and magnetic fields

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Raghvendra Posti, Chirag Kalouni, Dhananjay Tiwari, Debangsu Roy
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 153501 (2024)
https://doi.org/10.1063/5.0226485
Published: October 2024
View article titled, Initialization-free multistate memristor: Synergy of spin–orbit torque and magnetic fields
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Journal Articles

MoS2 quantum capacitance for memcapacitor

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Wei Guo, Jialu Li, Yadong Qiao, Chenya Feng, Li Yao, Fadi Wang, Yuhang Wang, Fengping Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 142107 (2024)
https://doi.org/10.1063/5.0218765
Published: October 2024
View article titled, MoS2 quantum capacitance for memcapacitor
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Journal Articles

Wide-bandgap semiconductor SiC-based memristors fabricated entirely by electron beam evaporation for artificial synapses

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Haiming Qin, Shilei Sun, Nan He, Pengchao Zhang, Shuai Chen, Cong Han, Rui Hu, Jiawen Wu, Weijing Shao, Mohamed Saadi, Hao Zhang, Youde Hu, Xinpeng Wang, Yi Liu, Liang Zeng, Yi Tong
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 143502 (2024)
https://doi.org/10.1063/5.0230471
Published: October 2024
View article titled, Wide-bandgap semiconductor SiC-based memristors fabricated entirely by electron beam evaporation for artificial synapses
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Journal Articles

Self-rectifying memristors with high rectification ratio and dynamic linearity for in-memory computing

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Guobin Zhang, Zijian Wang, Xuemeng Fan, Zhen Wang, Pengtao Li, Qi Luo, Dawei Gao, Qing Wan, Yishu Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 133501 (2024)
https://doi.org/10.1063/5.0225833
Published: September 2024
View article titled, Self-rectifying memristors with high rectification ratio and dynamic linearity for in-memory computing
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Journal Articles

Interface modeling analysis using density functional theory in highly reliable Pt/HfO2/TaOx/Ta self-rectifying memristor

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Sheng-Guang Ren, Ge-Qi Mao, Yi-Bai Xue, Yu Zhang, Jia-Yi Sun, Wen-Bin Zuo, Yi Li, Kan-Hao Xue, Xiang-Shui Miao
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 123503 (2024)
https://doi.org/10.1063/5.0227603
Published: September 2024
View article titled, Interface modeling analysis using density functional theory in highly reliable Pt/HfO2/TaOx/Ta self-rectifying memristor
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Journal Articles

Modulating conductive filaments via thermally stable bilayer organic memristor

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Yiming Zheng, Xiangyu Guo, Jiandong Jiang, Yujun Fu, Qi Wang, Deyan He
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 083506 (2024)
https://doi.org/10.1063/5.0221763
Published: August 2024
View article titled, Modulating conductive filaments via thermally stable bilayer organic memristor
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Journal Articles

Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli

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Jie Lu, Zeyang Xiang, Kexiang Wang, Ziyu Wang, Si Shi, Zuming Liu, Xiran Chen, Xinyu Hu, Ran Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 083508 (2024)
https://doi.org/10.1063/5.0224947
Published: August 2024
View article titled, Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli
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Journal Articles

Nanocomposites of ferrocenyl-modified gold clusters and semiconducting polymers that integrate field-effect transistor and flash memory in a single neuromorphic device

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Deepa Singh, Praveen N. Gunawardene, Mark S. Workentin, Giovanni Fanchini
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 073505 (2024)
https://doi.org/10.1063/5.0219013
Published: August 2024
View article titled, Nanocomposites of ferrocenyl-modified gold clusters and semiconducting polymers that integrate field-effect transistor and flash memory in a single neuromorphic device
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